KR102905173B1 - 금속 재료, 금속 재료의 제조 방법, 반도체 처리 장치의 패시베이션 방법, 반도체 디바이스의 제조 방법, 및, 충전이 끝난 용기의 제조 방법 - Google Patents

금속 재료, 금속 재료의 제조 방법, 반도체 처리 장치의 패시베이션 방법, 반도체 디바이스의 제조 방법, 및, 충전이 끝난 용기의 제조 방법

Info

Publication number
KR102905173B1
KR102905173B1 KR1020227020966A KR20227020966A KR102905173B1 KR 102905173 B1 KR102905173 B1 KR 102905173B1 KR 1020227020966 A KR1020227020966 A KR 1020227020966A KR 20227020966 A KR20227020966 A KR 20227020966A KR 102905173 B1 KR102905173 B1 KR 102905173B1
Authority
KR
South Korea
Prior art keywords
mof
metal material
manufacturing
film
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227020966A
Other languages
English (en)
Korean (ko)
Other versions
KR20220124154A (ko
Inventor
아키오 기쿠치
료마 노무라
료타 요시무라
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샌트랄 글래스 컴퍼니 리미티드 filed Critical 샌트랄 글래스 컴퍼니 리미티드
Publication of KR20220124154A publication Critical patent/KR20220124154A/ko
Application granted granted Critical
Publication of KR102905173B1 publication Critical patent/KR102905173B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C1/00—Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge
    • F17C1/10—Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge with provision for protection against corrosion, e.g. due to gaseous acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2203/00—Vessel construction, in particular walls or details thereof
    • F17C2203/06—Materials for walls or layers thereof; Properties or structures of walls or their materials
    • F17C2203/0602—Wall structures; Special features thereof
    • F17C2203/0607—Coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020227020966A 2020-01-06 2020-11-19 금속 재료, 금속 재료의 제조 방법, 반도체 처리 장치의 패시베이션 방법, 반도체 디바이스의 제조 방법, 및, 충전이 끝난 용기의 제조 방법 Active KR102905173B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020000352 2020-01-06
JPJP-P-2020-000352 2020-01-06
PCT/JP2020/043200 WO2021140757A1 (ja) 2020-01-06 2020-11-19 金属材料、金属材料の製造方法、半導体処理装置のパッシベーション方法、半導体デバイスの製造方法、および、充填済み容器の製造方法

Publications (2)

Publication Number Publication Date
KR20220124154A KR20220124154A (ko) 2022-09-13
KR102905173B1 true KR102905173B1 (ko) 2025-12-30

Family

ID=76787827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227020966A Active KR102905173B1 (ko) 2020-01-06 2020-11-19 금속 재료, 금속 재료의 제조 방법, 반도체 처리 장치의 패시베이션 방법, 반도체 디바이스의 제조 방법, 및, 충전이 끝난 용기의 제조 방법

Country Status (6)

Country Link
US (1) US12378659B2 (https=)
JP (1) JP7719370B2 (https=)
KR (1) KR102905173B1 (https=)
CN (1) CN114981481A (https=)
TW (1) TWI891684B (https=)
WO (1) WO2021140757A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130034708A1 (en) * 2011-08-05 2013-02-07 Samsung Display Co., Ltd. Method of preparing thin film, thin film, apparatus for preparing thin film, and electronic device including thin film
US20170323772A1 (en) * 2016-05-03 2017-11-09 Applied Materials, Inc. Protective metal oxy-fluoride coatings

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519265B2 (https=) 1972-08-30 1976-03-25
JPH0615716B2 (ja) * 1983-07-05 1994-03-02 キヤノン株式会社 プラズマｃｖｄ装置
JP2867376B2 (ja) * 1988-12-09 1999-03-08 ステラケミファ株式会社 フッ化不動態膜が形成された金属材料、その金属材料を用いたガス装置、並びに該フッ化不動態膜の形成方法
US5009963A (en) 1988-07-20 1991-04-23 Tadahiro Ohmi Metal material with film passivated by fluorination and apparatus composed of the metal material
JP2848717B2 (ja) * 1991-05-17 1999-01-20 セントラル硝子株式会社 ６フッ化タングステンの精製法
JP2001172020A (ja) * 1999-12-16 2001-06-26 Stella Chemifa Corp 高純度六フッ化タングステンの精製方法
JP2002263972A (ja) 2001-03-13 2002-09-17 Micron Seimitsu Kk 工作機械ベッド構造、および工作機械ベッドの構成方法
JP3995546B2 (ja) 2002-07-16 2007-10-24 ステラケミファ株式会社 金属酸化フッ化皮膜が形成された金属材料
JP4516284B2 (ja) 2003-05-14 2010-08-04 ニッポン高度紙工業株式会社 固体電解質及び該固体電解質を使用した電気化学システム
JP2014086579A (ja) * 2012-10-19 2014-05-12 Applied Materials Inc 真空チャンバ用反射部材
CN103952677B (zh) 2014-05-12 2016-06-22 北京航空航天大学 一种电子增强等离子体放电管内壁涂层的方法
CN108431994A (zh) 2015-08-11 2018-08-21 工业研究与发展基金会有限公司 金属氟化物涂覆的嵌锂材料和其制备方法及其用途
KR102652512B1 (ko) 2015-11-10 2024-03-28 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정
JP7157299B2 (ja) 2017-07-14 2022-10-20 セントラル硝子株式会社 酸フッ化金属の処理方法及びクリーニング方法
CN110832106B (zh) 2017-08-01 2022-04-15 中央硝子株式会社 已完成填充的容器的制造方法以及已完成填充的容器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130034708A1 (en) * 2011-08-05 2013-02-07 Samsung Display Co., Ltd. Method of preparing thin film, thin film, apparatus for preparing thin film, and electronic device including thin film
US20170323772A1 (en) * 2016-05-03 2017-11-09 Applied Materials, Inc. Protective metal oxy-fluoride coatings

Also Published As

Publication number Publication date
WO2021140757A1 (ja) 2021-07-15
TW202130833A (zh) 2021-08-16
US12378659B2 (en) 2025-08-05
TWI891684B (zh) 2025-08-01
JPWO2021140757A1 (https=) 2021-07-15
JP7719370B2 (ja) 2025-08-06
CN114981481A (zh) 2022-08-30
US20230029787A1 (en) 2023-02-02
KR20220124154A (ko) 2022-09-13

Similar Documents

Publication Publication Date Title
JP7460771B2 (ja) フッ化マグネシウム領域が形成させる金属体
KR102527163B1 (ko) 충전이 끝난 용기의 제조 방법 및 충전이 끝난 용기
TWI751701B (zh) 耐蝕性構件
JP6631498B2 (ja) シリコン材料製造工程の評価方法およびシリコン材料の製造方法
CN101884099A (zh) 用于处理半导体加工部件的方法以及由此形成的部件
JP2018190903A (ja) 半導体ウェハの製造方法及び半導体ウェハ
KR102905173B1 (ko) 금속 재료, 금속 재료의 제조 방법, 반도체 처리 장치의 패시베이션 방법, 반도체 디바이스의 제조 방법, 및, 충전이 끝난 용기의 제조 방법
KR102720415B1 (ko) 내식성 부재
KR102757084B1 (ko) 반도체 증착공정 장비의 알루미늄계 부품용 세정물 및 이를 이용한 반도체 증착공정 장비의 알루미늄계 부품 세정 방법
EP0692336A1 (en) Welding method and welded structure for forming passivated chromium oxide film on weld
JP4366169B2 (ja) アルミニウムの表面処理方法
KR102489717B1 (ko) 저 내부식성 금속 기재를 이용한 고순도 불화수소를 저장하기 위한 용기 및 이의 제조방법
KR101198863B1 (ko) 핵연료 피복관 내벽에의 기능성 소재층 형성방법
JP2008007861A (ja) アルミニウムの表面処理方法
JP7222374B2 (ja) 配管接続方法及び半導体ウェーハ熱処理装置
US20200406222A1 (en) Reaction chamber component, preparation method, and reaction chamber
Mei Accuracy Improvement in XPS by Low Energy Argon Ion
TW201134757A (en) Carbon material and method for producing the same
JP2019094239A (ja) Ｉｉｉ族窒化物単結晶積層体の製造方法及びｉｉｉ族窒化物単結晶積層体
JP2005179157A (ja) 石英ガラスの表面改質方法
Trigwell Effects of welding on the metallurgy of electropolished 316L stainless steel
TW201932612A (zh) Ｃｕ－Ｇａ合金濺鍍靶，及Ｃｕ－Ｇａ合金濺鍍靶之製造方法
CF Removal of Oxide Film Prepared under BWR Condition by
JP2008244291A (ja) プラズマ処理装置およびプラズマ処理装置に用いる石英部材

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)