TWI891684B - 金屬材料、金屬材料之製造方法、半導體處理裝置之鈍化方法、半導體元件之製造方法、及已填充容器之製造方法 - Google Patents

金屬材料、金屬材料之製造方法、半導體處理裝置之鈍化方法、半導體元件之製造方法、及已填充容器之製造方法

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Publication number
TWI891684B
TWI891684B TW109142444A TW109142444A TWI891684B TW I891684 B TWI891684 B TW I891684B TW 109142444 A TW109142444 A TW 109142444A TW 109142444 A TW109142444 A TW 109142444A TW I891684 B TWI891684 B TW I891684B
Authority
TW
Taiwan
Prior art keywords
manufacturing
mof6
film
metal material
metal substrate
Prior art date
Application number
TW109142444A
Other languages
English (en)
Chinese (zh)
Other versions
TW202130833A (zh
Inventor
菊池亜紀応
野村涼馬
吉村亮太
Original Assignee
日商中央硝子股份有限公司
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Publication date
Application filed by 日商中央硝子股份有限公司 filed Critical 日商中央硝子股份有限公司
Publication of TW202130833A publication Critical patent/TW202130833A/zh
Application granted granted Critical
Publication of TWI891684B publication Critical patent/TWI891684B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C1/00—Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge
    • F17C1/10—Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge with provision for protection against corrosion, e.g. due to gaseous acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2203/00—Vessel construction, in particular walls or details thereof
    • F17C2203/06—Materials for walls or layers thereof; Properties or structures of walls or their materials
    • F17C2203/0602—Wall structures; Special features thereof
    • F17C2203/0607—Coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemical Vapour Deposition (AREA)
TW109142444A 2020-01-06 2020-12-02 金屬材料、金屬材料之製造方法、半導體處理裝置之鈍化方法、半導體元件之製造方法、及已填充容器之製造方法 TWI891684B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020000352 2020-01-06
JP2020-000352 2020-01-06

Publications (2)

Publication Number Publication Date
TW202130833A TW202130833A (zh) 2021-08-16
TWI891684B true TWI891684B (zh) 2025-08-01

Family

ID=76787827

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109142444A TWI891684B (zh) 2020-01-06 2020-12-02 金屬材料、金屬材料之製造方法、半導體處理裝置之鈍化方法、半導體元件之製造方法、及已填充容器之製造方法

Country Status (6)

Country Link
US (1) US12378659B2 (https=)
JP (1) JP7719370B2 (https=)
KR (1) KR102905173B1 (https=)
CN (1) CN114981481A (https=)
TW (1) TWI891684B (https=)
WO (1) WO2021140757A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW496852B (en) * 1999-12-16 2002-08-01 Stella Chemifa Kk Method for purifying high-purity tungsten hexafluoride
CN103952677A (zh) * 2014-05-12 2014-07-30 北京航空航天大学 一种电子增强等离子体放电管内壁涂层的方法
CN108431994A (zh) * 2015-08-11 2018-08-21 工业研究与发展基金会有限公司 金属氟化物涂覆的嵌锂材料和其制备方法及其用途

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519265B2 (https=) 1972-08-30 1976-03-25
JPH0615716B2 (ja) * 1983-07-05 1994-03-02 キヤノン株式会社 プラズマｃｖｄ装置
JP2867376B2 (ja) * 1988-12-09 1999-03-08 ステラケミファ株式会社 フッ化不動態膜が形成された金属材料、その金属材料を用いたガス装置、並びに該フッ化不動態膜の形成方法
US5009963A (en) 1988-07-20 1991-04-23 Tadahiro Ohmi Metal material with film passivated by fluorination and apparatus composed of the metal material
JP2848717B2 (ja) * 1991-05-17 1999-01-20 セントラル硝子株式会社 ６フッ化タングステンの精製法
JP2002263972A (ja) 2001-03-13 2002-09-17 Micron Seimitsu Kk 工作機械ベッド構造、および工作機械ベッドの構成方法
JP3995546B2 (ja) 2002-07-16 2007-10-24 ステラケミファ株式会社 金属酸化フッ化皮膜が形成された金属材料
JP4516284B2 (ja) 2003-05-14 2010-08-04 ニッポン高度紙工業株式会社 固体電解質及び該固体電解質を使用した電気化学システム
KR101830780B1 (ko) * 2011-08-05 2018-04-05 삼성전자주식회사 박막의 제조방법, 박막, 박막의 제조장치 및 전자소자
JP2014086579A (ja) * 2012-10-19 2014-05-12 Applied Materials Inc 真空チャンバ用反射部材
KR102652512B1 (ko) 2015-11-10 2024-03-28 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정
US11572617B2 (en) * 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
JP7157299B2 (ja) 2017-07-14 2022-10-20 セントラル硝子株式会社 酸フッ化金属の処理方法及びクリーニング方法
CN110832106B (zh) 2017-08-01 2022-04-15 中央硝子株式会社 已完成填充的容器的制造方法以及已完成填充的容器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW496852B (en) * 1999-12-16 2002-08-01 Stella Chemifa Kk Method for purifying high-purity tungsten hexafluoride
CN103952677A (zh) * 2014-05-12 2014-07-30 北京航空航天大学 一种电子增强等离子体放电管内壁涂层的方法
CN108431994A (zh) * 2015-08-11 2018-08-21 工业研究与发展基金会有限公司 金属氟化物涂覆的嵌锂材料和其制备方法及其用途

Also Published As

Publication number Publication date
WO2021140757A1 (ja) 2021-07-15
TW202130833A (zh) 2021-08-16
KR102905173B1 (ko) 2025-12-30
US12378659B2 (en) 2025-08-05
JPWO2021140757A1 (https=) 2021-07-15
JP7719370B2 (ja) 2025-08-06
CN114981481A (zh) 2022-08-30
US20230029787A1 (en) 2023-02-02
KR20220124154A (ko) 2022-09-13

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