KR102895613B1 - 반도체 장치 - Google Patents
반도체 장치Info
- Publication number
- KR102895613B1 KR102895613B1 KR1020230112808A KR20230112808A KR102895613B1 KR 102895613 B1 KR102895613 B1 KR 102895613B1 KR 1020230112808 A KR1020230112808 A KR 1020230112808A KR 20230112808 A KR20230112808 A KR 20230112808A KR 102895613 B1 KR102895613 B1 KR 102895613B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- region
- oxide
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022143864A JP2024039361A (ja) | 2022-09-09 | 2022-09-09 | 半導体装置 |
| JPJP-P-2022-143864 | 2022-09-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20240035705A KR20240035705A (ko) | 2024-03-18 |
| KR102895613B1 true KR102895613B1 (ko) | 2025-12-05 |
Family
ID=90054481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020230112808A Active KR102895613B1 (ko) | 2022-09-09 | 2023-08-28 | 반도체 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240097043A1 (https=) |
| JP (1) | JP2024039361A (https=) |
| KR (1) | KR102895613B1 (https=) |
| CN (1) | CN117690975A (https=) |
| DE (1) | DE102023208538B4 (https=) |
| TW (1) | TWI857754B (https=) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019135137A1 (ja) | 2018-01-05 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| KR102637201B1 (ko) | 2018-03-01 | 2024-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6035195B2 (ja) * | 2012-05-01 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9985139B2 (en) * | 2014-11-12 | 2018-05-29 | Qualcomm Incorporated | Hydrogenated p-channel metal oxide semiconductor thin film transistors |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JP2017162852A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社ジャパンディスプレイ | 半導体装置および表示装置 |
| JP2017224676A (ja) * | 2016-06-14 | 2017-12-21 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
| KR102797576B1 (ko) * | 2018-03-23 | 2025-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP7344869B2 (ja) * | 2018-06-29 | 2023-09-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US11121263B2 (en) * | 2019-08-27 | 2021-09-14 | Apple Inc. | Hydrogen trap layer for display device and the same |
-
2022
- 2022-09-09 JP JP2022143864A patent/JP2024039361A/ja active Pending
-
2023
- 2023-08-18 TW TW112131134A patent/TWI857754B/zh active
- 2023-08-28 US US18/456,832 patent/US20240097043A1/en active Pending
- 2023-08-28 KR KR1020230112808A patent/KR102895613B1/ko active Active
- 2023-08-29 CN CN202311098309.4A patent/CN117690975A/zh active Pending
- 2023-09-05 DE DE102023208538.0A patent/DE102023208538B4/de active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019135137A1 (ja) | 2018-01-05 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| KR102637201B1 (ko) | 2018-03-01 | 2024-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI857754B (zh) | 2024-10-01 |
| DE102023208538B4 (de) | 2026-01-29 |
| US20240097043A1 (en) | 2024-03-21 |
| KR20240035705A (ko) | 2024-03-18 |
| TW202412314A (zh) | 2024-03-16 |
| JP2024039361A (ja) | 2024-03-22 |
| CN117690975A (zh) | 2024-03-12 |
| DE102023208538A1 (de) | 2024-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100679917B1 (ko) | 박막 트랜지스터 및 그 제조방법 | |
| KR20100132308A (ko) | 박막 트랜지스터 및 그 제조방법 | |
| KR102843075B1 (ko) | 반도체 장치 | |
| KR102895613B1 (ko) | 반도체 장치 | |
| KR102874839B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| JP2024051551A5 (https=) | ||
| JP2024039361A5 (https=) | ||
| US20250380465A1 (en) | Semiconductor device and manufacturing method thereof | |
| US20260006828A1 (en) | Semiconductor device and manufacturing method thereof | |
| US20240178325A1 (en) | Semiconductor device | |
| US20250113546A1 (en) | Semiconductor device | |
| JP2024053987A5 (https=) | ||
| JPWO2024190115A5 (https=) | ||
| TWI858841B (zh) | 積層結構體及薄膜電晶體 | |
| JP2025128517A (ja) | 半導体装置 | |
| JPWO2024190116A5 (https=) | ||
| WO2023238521A1 (ja) | 薄膜トランジスタおよび電子機器 | |
| TW202515331A (zh) | 半導體裝置 | |
| TW202412323A (zh) | 半導體裝置 | |
| KR20240007599A (ko) | 반도체 장치 | |
| CN120659359A (zh) | 半导体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13 | Application amended |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| F13 | Ip right granted in full following pre-grant review |
Free format text: ST27 STATUS EVENT CODE: A-3-4-F10-F13-REX-PX0701 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PX0701 | Decision of registration after re-examination |
St.27 status event code: A-3-4-F10-F13-rex-PX0701 |
|
| F11 | Ip right granted following substantive examination |
Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| U11 | Full renewal or maintenance fee paid |
Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U11-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE) Year of fee payment: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| Q13 | Ip right document published |
Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE) |