CN117690975A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN117690975A CN117690975A CN202311098309.4A CN202311098309A CN117690975A CN 117690975 A CN117690975 A CN 117690975A CN 202311098309 A CN202311098309 A CN 202311098309A CN 117690975 A CN117690975 A CN 117690975A
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- region
- oxide
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022143864A JP2024039361A (ja) | 2022-09-09 | 2022-09-09 | 半導体装置 |
| JP2022-143864 | 2022-09-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117690975A true CN117690975A (zh) | 2024-03-12 |
Family
ID=90054481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311098309.4A Pending CN117690975A (zh) | 2022-09-09 | 2023-08-29 | 半导体器件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240097043A1 (https=) |
| JP (1) | JP2024039361A (https=) |
| KR (1) | KR102895613B1 (https=) |
| CN (1) | CN117690975A (https=) |
| DE (1) | DE102023208538B4 (https=) |
| TW (1) | TWI857754B (https=) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6035195B2 (ja) * | 2012-05-01 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9985139B2 (en) * | 2014-11-12 | 2018-05-29 | Qualcomm Incorporated | Hydrogenated p-channel metal oxide semiconductor thin film transistors |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JP2017162852A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社ジャパンディスプレイ | 半導体装置および表示装置 |
| JP2017224676A (ja) * | 2016-06-14 | 2017-12-21 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
| JP7194122B2 (ja) | 2018-01-05 | 2022-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN111788664B (zh) | 2018-03-01 | 2024-04-16 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| KR102797576B1 (ko) * | 2018-03-23 | 2025-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP7344869B2 (ja) * | 2018-06-29 | 2023-09-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US11121263B2 (en) * | 2019-08-27 | 2021-09-14 | Apple Inc. | Hydrogen trap layer for display device and the same |
-
2022
- 2022-09-09 JP JP2022143864A patent/JP2024039361A/ja active Pending
-
2023
- 2023-08-18 TW TW112131134A patent/TWI857754B/zh active
- 2023-08-28 US US18/456,832 patent/US20240097043A1/en active Pending
- 2023-08-28 KR KR1020230112808A patent/KR102895613B1/ko active Active
- 2023-08-29 CN CN202311098309.4A patent/CN117690975A/zh active Pending
- 2023-09-05 DE DE102023208538.0A patent/DE102023208538B4/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI857754B (zh) | 2024-10-01 |
| DE102023208538B4 (de) | 2026-01-29 |
| US20240097043A1 (en) | 2024-03-21 |
| KR102895613B1 (ko) | 2025-12-05 |
| KR20240035705A (ko) | 2024-03-18 |
| TW202412314A (zh) | 2024-03-16 |
| JP2024039361A (ja) | 2024-03-22 |
| DE102023208538A1 (de) | 2024-03-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |