JPWO2024190115A5 - - Google Patents

Info

Publication number
JPWO2024190115A5
JPWO2024190115A5 JP2025506536A JP2025506536A JPWO2024190115A5 JP WO2024190115 A5 JPWO2024190115 A5 JP WO2024190115A5 JP 2025506536 A JP2025506536 A JP 2025506536A JP 2025506536 A JP2025506536 A JP 2025506536A JP WO2024190115 A5 JPWO2024190115 A5 JP WO2024190115A5
Authority
JP
Japan
Prior art keywords
insulating layer
region
oxide
layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025506536A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024190115A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/002593 external-priority patent/WO2024190115A1/ja
Publication of JPWO2024190115A1 publication Critical patent/JPWO2024190115A1/ja
Publication of JPWO2024190115A5 publication Critical patent/JPWO2024190115A5/ja
Pending legal-status Critical Current

Links

JP2025506536A 2023-03-16 2024-01-29 Pending JPWO2024190115A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023041813 2023-03-16
PCT/JP2024/002593 WO2024190115A1 (ja) 2023-03-16 2024-01-29 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2024190115A1 JPWO2024190115A1 (https=) 2024-09-19
JPWO2024190115A5 true JPWO2024190115A5 (https=) 2025-12-01

Family

ID=92754722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025506536A Pending JPWO2024190115A1 (https=) 2023-03-16 2024-01-29

Country Status (4)

Country Link
US (1) US20250380465A1 (https=)
JP (1) JPWO2024190115A1 (https=)
CN (1) CN120770210A (https=)
WO (1) WO2024190115A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869509B2 (ja) * 2001-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8247273B2 (en) * 2007-07-17 2012-08-21 Sharp Kabushiki Kaisha Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device
KR101806271B1 (ko) * 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9960280B2 (en) * 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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