JP2024051551A5 - - Google Patents

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Publication number
JP2024051551A5
JP2024051551A5 JP2022157776A JP2022157776A JP2024051551A5 JP 2024051551 A5 JP2024051551 A5 JP 2024051551A5 JP 2022157776 A JP2022157776 A JP 2022157776A JP 2022157776 A JP2022157776 A JP 2022157776A JP 2024051551 A5 JP2024051551 A5 JP 2024051551A5
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JP
Japan
Prior art keywords
insulating layer
region
oxide
layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022157776A
Other languages
English (en)
Japanese (ja)
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JP2024051551A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2022157776A priority Critical patent/JP2024051551A/ja
Priority claimed from JP2022157776A external-priority patent/JP2024051551A/ja
Priority to TW112133070A priority patent/TWI851391B/zh
Priority to KR1020230123124A priority patent/KR102843075B1/ko
Priority to CN202311207996.9A priority patent/CN117810268A/zh
Priority to DE102023209319.7A priority patent/DE102023209319A1/de
Priority to US18/476,910 priority patent/US20240113227A1/en
Publication of JP2024051551A publication Critical patent/JP2024051551A/ja
Publication of JP2024051551A5 publication Critical patent/JP2024051551A5/ja
Pending legal-status Critical Current

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JP2022157776A 2022-09-30 2022-09-30 半導体装置 Pending JP2024051551A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022157776A JP2024051551A (ja) 2022-09-30 2022-09-30 半導体装置
TW112133070A TWI851391B (zh) 2022-09-30 2023-08-31 半導體裝置
KR1020230123124A KR102843075B1 (ko) 2022-09-30 2023-09-15 반도체 장치
CN202311207996.9A CN117810268A (zh) 2022-09-30 2023-09-19 半导体装置
DE102023209319.7A DE102023209319A1 (de) 2022-09-30 2023-09-25 Halbleitervorrichtung
US18/476,910 US20240113227A1 (en) 2022-09-30 2023-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022157776A JP2024051551A (ja) 2022-09-30 2022-09-30 半導体装置

Publications (2)

Publication Number Publication Date
JP2024051551A JP2024051551A (ja) 2024-04-11
JP2024051551A5 true JP2024051551A5 (https=) 2025-07-02

Family

ID=90246246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022157776A Pending JP2024051551A (ja) 2022-09-30 2022-09-30 半導体装置

Country Status (6)

Country Link
US (1) US20240113227A1 (https=)
JP (1) JP2024051551A (https=)
KR (1) KR102843075B1 (https=)
CN (1) CN117810268A (https=)
DE (1) DE102023209319A1 (https=)
TW (1) TWI851391B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118695682B (zh) * 2024-08-27 2024-11-01 武汉华星光电技术有限公司 阵列基板及其制备方法以及显示面板

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480554B (en) * 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4127466B2 (ja) 2000-07-31 2008-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6035195B2 (ja) * 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102298775B1 (ko) * 2015-01-21 2021-09-07 에스케이하이닉스 주식회사 싱글 폴리 비휘발성 메모리 소자 및 그 제조방법
US9647116B1 (en) * 2015-10-28 2017-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating self-aligned contact in a semiconductor device
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP7194122B2 (ja) * 2018-01-05 2022-12-21 株式会社半導体エネルギー研究所 半導体装置
KR102797576B1 (ko) * 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

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