KR102843075B1 - 반도체 장치 - Google Patents
반도체 장치Info
- Publication number
- KR102843075B1 KR102843075B1 KR1020230123124A KR20230123124A KR102843075B1 KR 102843075 B1 KR102843075 B1 KR 102843075B1 KR 1020230123124 A KR1020230123124 A KR 1020230123124A KR 20230123124 A KR20230123124 A KR 20230123124A KR 102843075 B1 KR102843075 B1 KR 102843075B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- region
- oxide
- layer
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022157776A JP2024051551A (ja) | 2022-09-30 | 2022-09-30 | 半導体装置 |
| JPJP-P-2022-157776 | 2022-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20240046023A KR20240046023A (ko) | 2024-04-08 |
| KR102843075B1 true KR102843075B1 (ko) | 2025-08-07 |
Family
ID=90246246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020230123124A Active KR102843075B1 (ko) | 2022-09-30 | 2023-09-15 | 반도체 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240113227A1 (https=) |
| JP (1) | JP2024051551A (https=) |
| KR (1) | KR102843075B1 (https=) |
| CN (1) | CN117810268A (https=) |
| DE (1) | DE102023209319A1 (https=) |
| TW (1) | TWI851391B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118695682B (zh) * | 2024-08-27 | 2024-11-01 | 武汉华星光电技术有限公司 | 阵列基板及其制备方法以及显示面板 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002175028A (ja) | 2000-07-31 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR100675263B1 (ko) * | 1999-07-22 | 2007-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제작방법 |
| US20200411694A1 (en) * | 2018-03-23 | 2020-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6035195B2 (ja) * | 2012-05-01 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| JP6345023B2 (ja) * | 2013-08-07 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9929279B2 (en) * | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102298775B1 (ko) * | 2015-01-21 | 2021-09-07 | 에스케이하이닉스 주식회사 | 싱글 폴리 비휘발성 메모리 소자 및 그 제조방법 |
| US9647116B1 (en) * | 2015-10-28 | 2017-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for fabricating self-aligned contact in a semiconductor device |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JP7194122B2 (ja) * | 2018-01-05 | 2022-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2022
- 2022-09-30 JP JP2022157776A patent/JP2024051551A/ja active Pending
-
2023
- 2023-08-31 TW TW112133070A patent/TWI851391B/zh active
- 2023-09-15 KR KR1020230123124A patent/KR102843075B1/ko active Active
- 2023-09-19 CN CN202311207996.9A patent/CN117810268A/zh active Pending
- 2023-09-25 DE DE102023209319.7A patent/DE102023209319A1/de active Pending
- 2023-09-28 US US18/476,910 patent/US20240113227A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100675263B1 (ko) * | 1999-07-22 | 2007-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제작방법 |
| JP2002175028A (ja) | 2000-07-31 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20200411694A1 (en) * | 2018-03-23 | 2020-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102023209319A1 (de) | 2024-04-04 |
| US20240113227A1 (en) | 2024-04-04 |
| TW202416389A (zh) | 2024-04-16 |
| JP2024051551A (ja) | 2024-04-11 |
| CN117810268A (zh) | 2024-04-02 |
| KR20240046023A (ko) | 2024-04-08 |
| TWI851391B (zh) | 2024-08-01 |
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| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
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| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
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