JP2024051551A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2024051551A
JP2024051551A JP2022157776A JP2022157776A JP2024051551A JP 2024051551 A JP2024051551 A JP 2024051551A JP 2022157776 A JP2022157776 A JP 2022157776A JP 2022157776 A JP2022157776 A JP 2022157776A JP 2024051551 A JP2024051551 A JP 2024051551A
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JP
Japan
Prior art keywords
insulating layer
region
oxide
layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022157776A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024051551A5 (https=
Inventor
創 渡壁
So Watakabe
将志 津吹
Masashi Tsubuki
俊成 佐々木
Toshinari Sasaki
明紘 花田
Akihiro Hanada
尊也 田丸
Takaya Tamaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2022157776A priority Critical patent/JP2024051551A/ja
Priority to TW112133070A priority patent/TWI851391B/zh
Priority to KR1020230123124A priority patent/KR102843075B1/ko
Priority to CN202311207996.9A priority patent/CN117810268A/zh
Priority to DE102023209319.7A priority patent/DE102023209319A1/de
Priority to US18/476,910 priority patent/US20240113227A1/en
Publication of JP2024051551A publication Critical patent/JP2024051551A/ja
Publication of JP2024051551A5 publication Critical patent/JP2024051551A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
JP2022157776A 2022-09-30 2022-09-30 半導体装置 Pending JP2024051551A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022157776A JP2024051551A (ja) 2022-09-30 2022-09-30 半導体装置
TW112133070A TWI851391B (zh) 2022-09-30 2023-08-31 半導體裝置
KR1020230123124A KR102843075B1 (ko) 2022-09-30 2023-09-15 반도체 장치
CN202311207996.9A CN117810268A (zh) 2022-09-30 2023-09-19 半导体装置
DE102023209319.7A DE102023209319A1 (de) 2022-09-30 2023-09-25 Halbleitervorrichtung
US18/476,910 US20240113227A1 (en) 2022-09-30 2023-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022157776A JP2024051551A (ja) 2022-09-30 2022-09-30 半導体装置

Publications (2)

Publication Number Publication Date
JP2024051551A true JP2024051551A (ja) 2024-04-11
JP2024051551A5 JP2024051551A5 (https=) 2025-07-02

Family

ID=90246246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022157776A Pending JP2024051551A (ja) 2022-09-30 2022-09-30 半導体装置

Country Status (6)

Country Link
US (1) US20240113227A1 (https=)
JP (1) JP2024051551A (https=)
KR (1) KR102843075B1 (https=)
CN (1) CN117810268A (https=)
DE (1) DE102023209319A1 (https=)
TW (1) TWI851391B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118695682B (zh) * 2024-08-27 2024-11-01 武汉华星光电技术有限公司 阵列基板及其制备方法以及显示面板

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480554B (en) * 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4127466B2 (ja) 2000-07-31 2008-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6035195B2 (ja) * 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102298775B1 (ko) * 2015-01-21 2021-09-07 에스케이하이닉스 주식회사 싱글 폴리 비휘발성 메모리 소자 및 그 제조방법
US9647116B1 (en) * 2015-10-28 2017-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating self-aligned contact in a semiconductor device
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP7194122B2 (ja) * 2018-01-05 2022-12-21 株式会社半導体エネルギー研究所 半導体装置
KR102797576B1 (ko) * 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Also Published As

Publication number Publication date
DE102023209319A1 (de) 2024-04-04
US20240113227A1 (en) 2024-04-04
TW202416389A (zh) 2024-04-16
CN117810268A (zh) 2024-04-02
KR102843075B1 (ko) 2025-08-07
KR20240046023A (ko) 2024-04-08
TWI851391B (zh) 2024-08-01

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