JPWO2024190116A5 - - Google Patents

Info

Publication number
JPWO2024190116A5
JPWO2024190116A5 JP2025506537A JP2025506537A JPWO2024190116A5 JP WO2024190116 A5 JPWO2024190116 A5 JP WO2024190116A5 JP 2025506537 A JP2025506537 A JP 2025506537A JP 2025506537 A JP2025506537 A JP 2025506537A JP WO2024190116 A5 JPWO2024190116 A5 JP WO2024190116A5
Authority
JP
Japan
Prior art keywords
insulating layer
region
oxide
layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025506537A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024190116A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/002595 external-priority patent/WO2024190116A1/ja
Publication of JPWO2024190116A1 publication Critical patent/JPWO2024190116A1/ja
Publication of JPWO2024190116A5 publication Critical patent/JPWO2024190116A5/ja
Pending legal-status Critical Current

Links

JP2025506537A 2023-03-16 2024-01-29 Pending JPWO2024190116A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023041930 2023-03-16
PCT/JP2024/002595 WO2024190116A1 (ja) 2023-03-16 2024-01-29 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2024190116A1 JPWO2024190116A1 (https=) 2024-09-19
JPWO2024190116A5 true JPWO2024190116A5 (https=) 2025-12-01

Family

ID=92754751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025506537A Pending JPWO2024190116A1 (https=) 2023-03-16 2024-01-29

Country Status (4)

Country Link
US (1) US20260006828A1 (https=)
JP (1) JPWO2024190116A1 (https=)
CN (1) CN120753017A (https=)
WO (1) WO2024190116A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869509B2 (ja) * 2001-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007294491A (ja) * 2006-04-20 2007-11-08 Mitsubishi Electric Corp 薄膜トランジスタ、及びその製造方法、並びに、アクティブマトリクス型表示装置及びその製造方法
US8247273B2 (en) * 2007-07-17 2012-08-21 Sharp Kabushiki Kaisha Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
JP2009123732A (ja) * 2007-11-12 2009-06-04 Seiko Epson Corp 半導体装置の製造方法、電気光学装置の製造方法
KR101806271B1 (ko) * 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
CN102760697B (zh) * 2011-04-27 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
US9960280B2 (en) * 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017107913A (ja) * 2015-12-07 2017-06-15 株式会社ジャパンディスプレイ 薄膜トランジスタ及び薄膜トランジスタの製造方法
WO2019166906A1 (ja) * 2018-02-28 2019-09-06 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

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