CN120753017A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法Info
- Publication number
- CN120753017A CN120753017A CN202480014051.1A CN202480014051A CN120753017A CN 120753017 A CN120753017 A CN 120753017A CN 202480014051 A CN202480014051 A CN 202480014051A CN 120753017 A CN120753017 A CN 120753017A
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- oxide
- region
- layer
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-041930 | 2023-03-16 | ||
| JP2023041930 | 2023-03-16 | ||
| PCT/JP2024/002595 WO2024190116A1 (ja) | 2023-03-16 | 2024-01-29 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120753017A true CN120753017A (zh) | 2025-10-03 |
Family
ID=92754751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480014051.1A Pending CN120753017A (zh) | 2023-03-16 | 2024-01-29 | 半导体装置及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20260006828A1 (https=) |
| JP (1) | JPWO2024190116A1 (https=) |
| CN (1) | CN120753017A (https=) |
| WO (1) | WO2024190116A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4869509B2 (ja) * | 2001-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2007294491A (ja) * | 2006-04-20 | 2007-11-08 | Mitsubishi Electric Corp | 薄膜トランジスタ、及びその製造方法、並びに、アクティブマトリクス型表示装置及びその製造方法 |
| US8247273B2 (en) * | 2007-07-17 | 2012-08-21 | Sharp Kabushiki Kaisha | Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device |
| JP2009135448A (ja) * | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
| JP2009123732A (ja) * | 2007-11-12 | 2009-06-04 | Seiko Epson Corp | 半導体装置の製造方法、電気光学装置の製造方法 |
| KR101806271B1 (ko) * | 2010-05-14 | 2017-12-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| CN102760697B (zh) * | 2011-04-27 | 2016-08-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| US9960280B2 (en) * | 2013-12-26 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2017107913A (ja) * | 2015-12-07 | 2017-06-15 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| WO2019166906A1 (ja) * | 2018-02-28 | 2019-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
-
2024
- 2024-01-29 JP JP2025506537A patent/JPWO2024190116A1/ja active Pending
- 2024-01-29 CN CN202480014051.1A patent/CN120753017A/zh active Pending
- 2024-01-29 WO PCT/JP2024/002595 patent/WO2024190116A1/ja not_active Ceased
-
2025
- 2025-09-09 US US19/322,823 patent/US20260006828A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024190116A1 (ja) | 2024-09-19 |
| US20260006828A1 (en) | 2026-01-01 |
| JPWO2024190116A1 (https=) | 2024-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102843075B1 (ko) | 반도체 장치 | |
| CN120753017A (zh) | 半导体装置及其制造方法 | |
| JP2024051551A5 (https=) | ||
| CN120770210A (zh) | 半导体装置及其制造方法 | |
| TW202425351A (zh) | 薄膜電晶體及電子機器 | |
| KR102874839B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| US20240178325A1 (en) | Semiconductor device | |
| KR102895613B1 (ko) | 반도체 장치 | |
| US20250275187A1 (en) | Semiconductor device | |
| JPWO2024190115A5 (https=) | ||
| JPWO2024190116A5 (https=) | ||
| US20250113546A1 (en) | Semiconductor device | |
| JP2024053987A5 (https=) | ||
| CN120659359A (zh) | 半导体装置 | |
| TW202410447A (zh) | 氧化物半導體膜、薄膜電晶體、及電子機器 | |
| JP2024039361A5 (https=) | ||
| TW202435432A (zh) | 半導體裝置 | |
| TW202515331A (zh) | 半導體裝置 | |
| CN119767782A (zh) | 半导体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |