JP2024039361A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2024039361A
JP2024039361A JP2022143864A JP2022143864A JP2024039361A JP 2024039361 A JP2024039361 A JP 2024039361A JP 2022143864 A JP2022143864 A JP 2022143864A JP 2022143864 A JP2022143864 A JP 2022143864A JP 2024039361 A JP2024039361 A JP 2024039361A
Authority
JP
Japan
Prior art keywords
insulating layer
region
oxide
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022143864A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024039361A5 (https=
Inventor
創 渡壁
So Watakabe
将志 津吹
Masashi Tsubuki
俊成 佐々木
Toshinari Sasaki
尊也 田丸
Takaya Tamaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2022143864A priority Critical patent/JP2024039361A/ja
Priority to TW112131134A priority patent/TWI857754B/zh
Priority to US18/456,832 priority patent/US20240097043A1/en
Priority to KR1020230112808A priority patent/KR102895613B1/ko
Priority to CN202311098309.4A priority patent/CN117690975A/zh
Priority to DE102023208538.0A priority patent/DE102023208538B4/de
Publication of JP2024039361A publication Critical patent/JP2024039361A/ja
Publication of JP2024039361A5 publication Critical patent/JP2024039361A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
JP2022143864A 2022-09-09 2022-09-09 半導体装置 Pending JP2024039361A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022143864A JP2024039361A (ja) 2022-09-09 2022-09-09 半導体装置
TW112131134A TWI857754B (zh) 2022-09-09 2023-08-18 半導體裝置
US18/456,832 US20240097043A1 (en) 2022-09-09 2023-08-28 Semiconductor device
KR1020230112808A KR102895613B1 (ko) 2022-09-09 2023-08-28 반도체 장치
CN202311098309.4A CN117690975A (zh) 2022-09-09 2023-08-29 半导体器件
DE102023208538.0A DE102023208538B4 (de) 2022-09-09 2023-09-05 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022143864A JP2024039361A (ja) 2022-09-09 2022-09-09 半導体装置

Publications (2)

Publication Number Publication Date
JP2024039361A true JP2024039361A (ja) 2024-03-22
JP2024039361A5 JP2024039361A5 (https=) 2025-06-05

Family

ID=90054481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022143864A Pending JP2024039361A (ja) 2022-09-09 2022-09-09 半導体装置

Country Status (6)

Country Link
US (1) US20240097043A1 (https=)
JP (1) JP2024039361A (https=)
KR (1) KR102895613B1 (https=)
CN (1) CN117690975A (https=)
DE (1) DE102023208538B4 (https=)
TW (1) TWI857754B (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6035195B2 (ja) * 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9985139B2 (en) * 2014-11-12 2018-05-29 Qualcomm Incorporated Hydrogenated p-channel metal oxide semiconductor thin film transistors
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP2017162852A (ja) * 2016-03-07 2017-09-14 株式会社ジャパンディスプレイ 半導体装置および表示装置
JP2017224676A (ja) * 2016-06-14 2017-12-21 株式会社ジャパンディスプレイ 半導体装置及び表示装置
JP7194122B2 (ja) 2018-01-05 2022-12-21 株式会社半導体エネルギー研究所 半導体装置
CN111788664B (zh) 2018-03-01 2024-04-16 株式会社半导体能源研究所 半导体装置的制造方法
KR102797576B1 (ko) * 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP7344869B2 (ja) * 2018-06-29 2023-09-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same

Also Published As

Publication number Publication date
TWI857754B (zh) 2024-10-01
DE102023208538B4 (de) 2026-01-29
US20240097043A1 (en) 2024-03-21
KR102895613B1 (ko) 2025-12-05
KR20240035705A (ko) 2024-03-18
TW202412314A (zh) 2024-03-16
CN117690975A (zh) 2024-03-12
DE102023208538A1 (de) 2024-03-14

Similar Documents

Publication Publication Date Title
KR102843075B1 (ko) 반도체 장치
JP2024039361A (ja) 半導体装置
JP2024051551A5 (https=)
US20240178325A1 (en) Semiconductor device
JP2024039361A5 (https=)
US20260006828A1 (en) Semiconductor device and manufacturing method thereof
US20250380465A1 (en) Semiconductor device and manufacturing method thereof
KR102874839B1 (ko) 반도체 장치 및 그 제조 방법
US20250275187A1 (en) Semiconductor device
US20250113543A1 (en) Semiconductor device
US20250113546A1 (en) Semiconductor device
JPWO2024190115A5 (https=)
US20250113535A1 (en) Semiconductor device
US20240021668A1 (en) Semiconductor device
JPWO2024190116A5 (https=)
JP2024053987A5 (https=)
WO2023238521A1 (ja) 薄膜トランジスタおよび電子機器
WO2024042997A1 (ja) 酸化物半導体膜、薄膜トランジスタ、および電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250527

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250904