KR102865544B1 - 화학 증폭형 포토레지스트 - Google Patents

화학 증폭형 포토레지스트

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Publication number
KR102865544B1
KR102865544B1 KR1020227021540A KR20227021540A KR102865544B1 KR 102865544 B1 KR102865544 B1 KR 102865544B1 KR 1020227021540 A KR1020227021540 A KR 1020227021540A KR 20227021540 A KR20227021540 A KR 20227021540A KR 102865544 B1 KR102865544 B1 KR 102865544B1
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South Korea
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composition
moiety
acid
derivative
compound
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KR1020227021540A
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English (en)
Korean (ko)
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KR20220106794A (ko
Inventor
다카노리 구도
판 양
Original Assignee
메르크 파텐트 게엠베하
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020227021540A 2019-11-25 2020-11-23 화학 증폭형 포토레지스트 Active KR102865544B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962939741P 2019-11-25 2019-11-25
US62/939,741 2019-11-25
PCT/EP2020/083048 WO2021105054A1 (en) 2019-11-25 2020-11-23 Chemically amplified photoresist

Publications (2)

Publication Number Publication Date
KR20220106794A KR20220106794A (ko) 2022-07-29
KR102865544B1 true KR102865544B1 (ko) 2025-09-26

Family

ID=73544198

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227021540A Active KR102865544B1 (ko) 2019-11-25 2020-11-23 화학 증폭형 포토레지스트

Country Status (7)

Country Link
US (1) US20220365432A1 (https=)
EP (1) EP4066059B1 (https=)
JP (1) JP7637137B2 (https=)
KR (1) KR102865544B1 (https=)
CN (1) CN114730130B (https=)
TW (1) TWI862739B (https=)
WO (1) WO2021105054A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7645089B2 (ja) * 2020-02-21 2025-03-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法並びにめっき造形物の製造方法
CN118284852A (zh) * 2021-11-17 2024-07-02 默克专利股份有限公司 通过湿式化学蚀刻以改善金属结构制造的组合物和方法
CN114153123B (zh) * 2021-12-10 2023-09-19 中国科学院光电技术研究所 光刻胶组合物及其应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001337456A (ja) * 2000-05-25 2001-12-07 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP2011501815A (ja) * 2007-09-25 2011-01-13 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション 厚膜レジスト
JP2014085643A (ja) * 2012-10-26 2014-05-12 Fujifilm Corp 感光性転写材料、パターン形成方法およびエッチング方法
JP2019530903A (ja) * 2016-08-09 2019-10-24 リッジフィールド・アクウィジション 環境的に安定した厚膜化学増幅レジスト

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
JPH11237737A (ja) * 1997-12-19 1999-08-31 Kansai Shingijutsu Kenkyusho:Kk 感光性樹脂組成物およびその製造方法
EP1126321A1 (en) * 2000-02-10 2001-08-22 Shipley Company LLC Positive photoresists containing crosslinked polymers
JP3738420B2 (ja) * 2001-11-16 2006-01-25 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
US6911293B2 (en) * 2002-04-11 2005-06-28 Clariant Finance (Bvi) Limited Photoresist compositions comprising acetals and ketals as solvents
KR100813458B1 (ko) * 2003-05-20 2008-03-13 도오꾜오까고오교 가부시끼가이샤 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴형성방법
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
JP4862707B2 (ja) 2006-03-17 2012-01-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US20130108956A1 (en) * 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite positive photosensitive composition and use thereof
JP6255717B2 (ja) * 2012-06-08 2018-01-10 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US9946157B2 (en) * 2015-03-31 2018-04-17 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
JP6397948B2 (ja) * 2017-03-01 2018-09-26 富士フイルム株式会社 感光性転写材料、パターン形成方法およびエッチング方法
US20230111506A1 (en) * 2020-03-10 2023-04-13 Mitsui Chemicals, Inc. Polymerizable composition for optical material, polymerizable prepolymer composition for optical material, cured product, and method for producing optical material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001337456A (ja) * 2000-05-25 2001-12-07 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP2011501815A (ja) * 2007-09-25 2011-01-13 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション 厚膜レジスト
JP2014085643A (ja) * 2012-10-26 2014-05-12 Fujifilm Corp 感光性転写材料、パターン形成方法およびエッチング方法
JP2019530903A (ja) * 2016-08-09 2019-10-24 リッジフィールド・アクウィジション 環境的に安定した厚膜化学増幅レジスト

Also Published As

Publication number Publication date
TW202146472A (zh) 2021-12-16
WO2021105054A1 (en) 2021-06-03
EP4066059B1 (en) 2024-02-28
EP4066059A1 (en) 2022-10-05
KR20220106794A (ko) 2022-07-29
JP2023502762A (ja) 2023-01-25
CN114730130A (zh) 2022-07-08
US20220365432A1 (en) 2022-11-17
CN114730130B (zh) 2025-04-18
JP7637137B2 (ja) 2025-02-27
TWI862739B (zh) 2024-11-21

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