TWI862739B - 化學增幅型光阻 - Google Patents

化學增幅型光阻 Download PDF

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Publication number
TWI862739B
TWI862739B TW109140929A TW109140929A TWI862739B TW I862739 B TWI862739 B TW I862739B TW 109140929 A TW109140929 A TW 109140929A TW 109140929 A TW109140929 A TW 109140929A TW I862739 B TWI862739 B TW I862739B
Authority
TW
Taiwan
Prior art keywords
composition
phenolic
moiety
polymer
compound
Prior art date
Application number
TW109140929A
Other languages
English (en)
Chinese (zh)
Other versions
TW202146472A (zh
Inventor
工藤隆範
楊帆
Original Assignee
德商馬克專利公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商馬克專利公司 filed Critical 德商馬克專利公司
Publication of TW202146472A publication Critical patent/TW202146472A/zh
Application granted granted Critical
Publication of TWI862739B publication Critical patent/TWI862739B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW109140929A 2019-11-25 2020-11-23 化學增幅型光阻 TWI862739B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962939741P 2019-11-25 2019-11-25
US62/939,741 2019-11-25

Publications (2)

Publication Number Publication Date
TW202146472A TW202146472A (zh) 2021-12-16
TWI862739B true TWI862739B (zh) 2024-11-21

Family

ID=73544198

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109140929A TWI862739B (zh) 2019-11-25 2020-11-23 化學增幅型光阻

Country Status (7)

Country Link
US (1) US20220365432A1 (https=)
EP (1) EP4066059B1 (https=)
JP (1) JP7637137B2 (https=)
KR (1) KR102865544B1 (https=)
CN (1) CN114730130B (https=)
TW (1) TWI862739B (https=)
WO (1) WO2021105054A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7645089B2 (ja) * 2020-02-21 2025-03-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法並びにめっき造形物の製造方法
CN118284852A (zh) * 2021-11-17 2024-07-02 默克专利股份有限公司 通过湿式化学蚀刻以改善金属结构制造的组合物和方法
CN114153123B (zh) * 2021-12-10 2023-09-19 中国科学院光电技术研究所 光刻胶组合物及其应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200916957A (en) * 2007-09-25 2009-04-16 Az Electronic Materials Usa Thick film resists
TW201411278A (zh) * 2012-06-08 2014-03-16 住友化學股份有限公司 光阻組成物
TW201818157A (zh) * 2016-08-09 2018-05-16 盧森堡商Ａｚ電子材料（盧森堡）股份有限公司 環境穩定厚膜化學增幅光阻

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
JPH11237737A (ja) * 1997-12-19 1999-08-31 Kansai Shingijutsu Kenkyusho:Kk 感光性樹脂組成物およびその製造方法
EP1126321A1 (en) * 2000-02-10 2001-08-22 Shipley Company LLC Positive photoresists containing crosslinked polymers
JP2001337456A (ja) * 2000-05-25 2001-12-07 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP3738420B2 (ja) * 2001-11-16 2006-01-25 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
US6911293B2 (en) * 2002-04-11 2005-06-28 Clariant Finance (Bvi) Limited Photoresist compositions comprising acetals and ketals as solvents
KR100813458B1 (ko) * 2003-05-20 2008-03-13 도오꾜오까고오교 가부시끼가이샤 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴형성방법
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
JP4862707B2 (ja) 2006-03-17 2012-01-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US20130108956A1 (en) * 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite positive photosensitive composition and use thereof
JP6100500B2 (ja) * 2012-10-26 2017-03-22 富士フイルム株式会社 感光性転写材料、パターン形成方法およびエッチング方法
US9946157B2 (en) * 2015-03-31 2018-04-17 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
JP6397948B2 (ja) * 2017-03-01 2018-09-26 富士フイルム株式会社 感光性転写材料、パターン形成方法およびエッチング方法
US20230111506A1 (en) * 2020-03-10 2023-04-13 Mitsui Chemicals, Inc. Polymerizable composition for optical material, polymerizable prepolymer composition for optical material, cured product, and method for producing optical material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200916957A (en) * 2007-09-25 2009-04-16 Az Electronic Materials Usa Thick film resists
TW201411278A (zh) * 2012-06-08 2014-03-16 住友化學股份有限公司 光阻組成物
TW201818157A (zh) * 2016-08-09 2018-05-16 盧森堡商Ａｚ電子材料（盧森堡）股份有限公司 環境穩定厚膜化學增幅光阻

Also Published As

Publication number Publication date
TW202146472A (zh) 2021-12-16
KR102865544B1 (ko) 2025-09-26
WO2021105054A1 (en) 2021-06-03
EP4066059B1 (en) 2024-02-28
EP4066059A1 (en) 2022-10-05
KR20220106794A (ko) 2022-07-29
JP2023502762A (ja) 2023-01-25
CN114730130A (zh) 2022-07-08
US20220365432A1 (en) 2022-11-17
CN114730130B (zh) 2025-04-18
JP7637137B2 (ja) 2025-02-27

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