KR102653096B1 - 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 - Google Patents
절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 Download PDFInfo
- Publication number
- KR102653096B1 KR102653096B1 KR1020190011124A KR20190011124A KR102653096B1 KR 102653096 B1 KR102653096 B1 KR 102653096B1 KR 1020190011124 A KR1020190011124 A KR 1020190011124A KR 20190011124 A KR20190011124 A KR 20190011124A KR 102653096 B1 KR102653096 B1 KR 102653096B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- silane compound
- formula
- insulating film
- phosphoric acid
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims description 41
- 238000009413 insulation Methods 0.000 title 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 94
- -1 silane compound Chemical class 0.000 claims abstract description 91
- 229910000077 silane Inorganic materials 0.000 claims abstract description 88
- 238000005530 etching Methods 0.000 claims abstract description 48
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 150000004767 nitrides Chemical class 0.000 claims description 33
- 238000002161 passivation Methods 0.000 claims description 27
- 125000004432 carbon atom Chemical group C* 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 238000005191 phase separation Methods 0.000 claims description 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 11
- 125000005647 linker group Chemical group 0.000 claims description 11
- 125000002947 alkylene group Chemical group 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 125000004450 alkenylene group Chemical group 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000004419 alkynylene group Chemical group 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 125000000304 alkynyl group Chemical group 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 125000002252 acyl group Chemical group 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000003827 glycol group Chemical group 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 142
- 230000008569 process Effects 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 16
- 238000001879 gelation Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 150000003568 thioethers Chemical class 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical class [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20180017450 | 2018-02-13 | ||
| KR1020180017450 | 2018-02-13 | ||
| KR1020180138844 | 2018-11-13 | ||
| KR1020180138844A KR20190098030A (ko) | 2018-02-13 | 2018-11-13 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190098053A KR20190098053A (ko) | 2019-08-21 |
| KR102653096B1 true KR102653096B1 (ko) | 2024-04-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190011124A KR102653096B1 (ko) | 2018-02-13 | 2019-01-29 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102653096B1 (zh) |
| CN (1) | CN110157434B (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102005963B1 (ko) * | 2018-05-26 | 2019-07-31 | 에스케이이노베이션 주식회사 | 식각액 조성물 및 실란화합물 |
| KR102258307B1 (ko) * | 2018-09-03 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| KR20210028447A (ko) * | 2019-09-04 | 2021-03-12 | 에스케이이노베이션 주식회사 | 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법 |
| KR102675055B1 (ko) * | 2019-09-18 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| KR102675057B1 (ko) * | 2019-10-29 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| KR20210062347A (ko) * | 2019-11-21 | 2021-05-31 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| KR20230030428A (ko) * | 2021-08-25 | 2023-03-06 | 삼성에스디아이 주식회사 | 실리콘 질화막 식각용 조성물 및 이를 이용한 실리콘 질화막 식각 방법 |
| CN115287069B (zh) * | 2022-07-06 | 2023-06-09 | 湖北兴福电子材料股份有限公司 | 一种抑制二氧化硅蚀刻的无c蚀刻液 |
| CN115894077B (zh) * | 2022-10-10 | 2023-07-25 | 湖北兴福电子材料股份有限公司 | 3d nand结构片的选择性蚀刻液 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107573940A (zh) * | 2016-07-04 | 2018-01-12 | Oci有限公司 | 氮化硅膜蚀刻溶液 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100823461B1 (ko) | 2007-05-11 | 2008-04-21 | 테크노세미켐 주식회사 | 실리콘산화막 및 실리콘질화막 식각용 식각액 조성물 |
| KR101097275B1 (ko) * | 2009-10-07 | 2011-12-22 | 솔브레인 주식회사 | 실리콘질화막에 대한 고선택비 식각용 조성물 |
| US9368647B2 (en) * | 2011-10-18 | 2016-06-14 | Samsung Electronics Co., Ltd. | Compositions for etching |
| KR101782329B1 (ko) * | 2011-10-18 | 2017-09-28 | 삼성전자주식회사 | 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법 |
| KR101809192B1 (ko) * | 2011-12-16 | 2017-12-15 | 에스케이하이닉스 주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| CN104145324B (zh) * | 2011-12-28 | 2017-12-22 | 恩特格里斯公司 | 用于选择性蚀刻氮化钛的组合物和方法 |
| US9868902B2 (en) * | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| KR101539373B1 (ko) * | 2014-07-17 | 2015-07-27 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| KR20160050536A (ko) * | 2014-10-30 | 2016-05-11 | 램테크놀러지 주식회사 | 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| KR102545802B1 (ko) * | 2015-12-04 | 2023-06-21 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| KR20170093004A (ko) * | 2016-02-04 | 2017-08-14 | 동우 화인켐 주식회사 | 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법 |
| CN107345137A (zh) * | 2016-05-04 | 2017-11-14 | Oci有限公司 | 能够抑制颗粒出现的蚀刻溶液 |
-
2019
- 2019-01-29 KR KR1020190011124A patent/KR102653096B1/ko active IP Right Grant
- 2019-02-12 CN CN201910110765.3A patent/CN110157434B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107573940A (zh) * | 2016-07-04 | 2018-01-12 | Oci有限公司 | 氮化硅膜蚀刻溶液 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110157434B (zh) | 2021-07-16 |
| KR20190098053A (ko) | 2019-08-21 |
| CN110157434A (zh) | 2019-08-23 |
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