KR102593949B1 - 이미지 센서 - Google Patents

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Publication number
KR102593949B1
KR102593949B1 KR1020180086453A KR20180086453A KR102593949B1 KR 102593949 B1 KR102593949 B1 KR 102593949B1 KR 1020180086453 A KR1020180086453 A KR 1020180086453A KR 20180086453 A KR20180086453 A KR 20180086453A KR 102593949 B1 KR102593949 B1 KR 102593949B1
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photoelectric conversion
openings
image sensor
conversion elements
color filter
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KR1020180086453A
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English (en)
Korean (ko)
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KR20200011689A (ko
Inventor
이윤기
김범석
박종훈
박준성
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삼성전자주식회사
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Priority to KR1020180086453A priority Critical patent/KR102593949B1/ko
Priority to US16/400,094 priority patent/US11031424B2/en
Priority to CN201910640080.XA priority patent/CN110783352A/zh
Priority to JP2019136021A priority patent/JP7291561B2/ja
Publication of KR20200011689A publication Critical patent/KR20200011689A/ko
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    • H01L27/14645—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H01L27/14621—
    • H01L27/14623—
    • H01L27/14627—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/484—Refractive light-concentrating means, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
KR1020180086453A 2018-07-25 2018-07-25 이미지 센서 Active KR102593949B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020180086453A KR102593949B1 (ko) 2018-07-25 2018-07-25 이미지 센서
US16/400,094 US11031424B2 (en) 2018-07-25 2019-05-01 Image sensor with selective light-shielding for reference pixels
CN201910640080.XA CN110783352A (zh) 2018-07-25 2019-07-16 具有用于参考像素的选择性光屏蔽的图像传感器
JP2019136021A JP7291561B2 (ja) 2018-07-25 2019-07-24 イメージセンサー

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180086453A KR102593949B1 (ko) 2018-07-25 2018-07-25 이미지 센서

Publications (2)

Publication Number Publication Date
KR20200011689A KR20200011689A (ko) 2020-02-04
KR102593949B1 true KR102593949B1 (ko) 2023-10-27

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Country Status (4)

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US (1) US11031424B2 (enExample)
JP (1) JP7291561B2 (enExample)
KR (1) KR102593949B1 (enExample)
CN (1) CN110783352A (enExample)

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KR102677769B1 (ko) * 2018-12-20 2024-06-24 삼성전자주식회사 후면조사형 이미지 센서 및 이를 포함하는 전자 기기
KR102386104B1 (ko) 2018-12-21 2022-04-13 삼성전자주식회사 후면조사형 이미지 센서 및 이를 포함하는 전자 기기
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JP7291561B2 (ja) 2023-06-15
CN110783352A (zh) 2020-02-11
US11031424B2 (en) 2021-06-08
KR20200011689A (ko) 2020-02-04
US20200035729A1 (en) 2020-01-30
JP2020017955A (ja) 2020-01-30

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