JP7291561B2 - イメージセンサー - Google Patents

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Publication number
JP7291561B2
JP7291561B2 JP2019136021A JP2019136021A JP7291561B2 JP 7291561 B2 JP7291561 B2 JP 7291561B2 JP 2019136021 A JP2019136021 A JP 2019136021A JP 2019136021 A JP2019136021 A JP 2019136021A JP 7291561 B2 JP7291561 B2 JP 7291561B2
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Japan
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opening
photoelectric conversion
image sensor
pixel
layer
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Japanese (ja)
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JP2020017955A5 (enExample
JP2020017955A (ja
Inventor
允 基 李
範 錫 金
鐘 勳 朴
俊 城 朴
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2020017955A5 publication Critical patent/JP2020017955A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/484—Refractive light-concentrating means, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2019136021A 2018-07-25 2019-07-24 イメージセンサー Active JP7291561B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180086453A KR102593949B1 (ko) 2018-07-25 2018-07-25 이미지 센서
KR10-2018-0086453 2018-07-25

Publications (3)

Publication Number Publication Date
JP2020017955A JP2020017955A (ja) 2020-01-30
JP2020017955A5 JP2020017955A5 (enExample) 2021-09-02
JP7291561B2 true JP7291561B2 (ja) 2023-06-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019136021A Active JP7291561B2 (ja) 2018-07-25 2019-07-24 イメージセンサー

Country Status (4)

Country Link
US (1) US11031424B2 (enExample)
JP (1) JP7291561B2 (enExample)
KR (1) KR102593949B1 (enExample)
CN (1) CN110783352A (enExample)

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KR102677769B1 (ko) * 2018-12-20 2024-06-24 삼성전자주식회사 후면조사형 이미지 센서 및 이를 포함하는 전자 기기
KR102386104B1 (ko) * 2018-12-21 2022-04-13 삼성전자주식회사 후면조사형 이미지 센서 및 이를 포함하는 전자 기기
US11475699B2 (en) 2020-01-22 2022-10-18 Asti Global Inc., Taiwan Display module and image display thereof
KR20210121852A (ko) * 2020-03-31 2021-10-08 에스케이하이닉스 주식회사 이미지 센싱 장치
KR102872412B1 (ko) 2020-04-28 2025-10-17 삼성디스플레이 주식회사 지문 센서와 그를 포함한 표시 장치
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KR102805366B1 (ko) * 2021-01-26 2025-05-12 삼성전자주식회사 광전 변환 소자
CN114823742A (zh) * 2021-01-27 2022-07-29 群创光电股份有限公司 感测装置以及电子装置
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JP7610464B2 (ja) * 2021-04-28 2025-01-08 株式会社ジャパンディスプレイ 検出装置
TWI811854B (zh) * 2021-07-23 2023-08-11 友達光電股份有限公司 光學感測裝置
JP2025041357A (ja) * 2023-09-13 2025-03-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置

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Publication number Publication date
US20200035729A1 (en) 2020-01-30
JP2020017955A (ja) 2020-01-30
US11031424B2 (en) 2021-06-08
CN110783352A (zh) 2020-02-11
KR102593949B1 (ko) 2023-10-27
KR20200011689A (ko) 2020-02-04

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