CN110783352A - 具有用于参考像素的选择性光屏蔽的图像传感器 - Google Patents

具有用于参考像素的选择性光屏蔽的图像传感器 Download PDF

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Publication number
CN110783352A
CN110783352A CN201910640080.XA CN201910640080A CN110783352A CN 110783352 A CN110783352 A CN 110783352A CN 201910640080 A CN201910640080 A CN 201910640080A CN 110783352 A CN110783352 A CN 110783352A
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China
Prior art keywords
photoelectric conversion
image sensor
pixel
conversion elements
light
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Pending
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CN201910640080.XA
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English (en)
Chinese (zh)
Inventor
李允基
金范锡
朴钟勋
朴俊城
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN110783352A publication Critical patent/CN110783352A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/484—Refractive light-concentrating means, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
CN201910640080.XA 2018-07-25 2019-07-16 具有用于参考像素的选择性光屏蔽的图像传感器 Pending CN110783352A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180086453A KR102593949B1 (ko) 2018-07-25 2018-07-25 이미지 센서
KR10-2018-0086453 2018-07-25

Publications (1)

Publication Number Publication Date
CN110783352A true CN110783352A (zh) 2020-02-11

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CN201910640080.XA Pending CN110783352A (zh) 2018-07-25 2019-07-16 具有用于参考像素的选择性光屏蔽的图像传感器

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Country Link
US (1) US11031424B2 (enExample)
JP (1) JP7291561B2 (enExample)
KR (1) KR102593949B1 (enExample)
CN (1) CN110783352A (enExample)

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CN113471228A (zh) * 2020-03-31 2021-10-01 爱思开海力士有限公司 图像感测装置
CN113671525A (zh) * 2020-09-11 2021-11-19 神盾股份有限公司 Tof光学感测模块
CN113764441A (zh) * 2020-06-03 2021-12-07 格科微电子（上海）有限公司 光学指纹器件
WO2022104658A1 (en) * 2020-11-19 2022-05-27 Huawei Technologies Co., Ltd. Solid state imaging device
CN115118897A (zh) * 2021-03-23 2022-09-27 爱思开海力士有限公司 图像感测装置
CN115516634A (zh) * 2020-06-25 2022-12-23 索尼半导体解决方案公司 电子设备

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KR102677769B1 (ko) * 2018-12-20 2024-06-24 삼성전자주식회사 후면조사형 이미지 센서 및 이를 포함하는 전자 기기
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JP7633006B2 (ja) * 2020-07-27 2025-02-19 株式会社ジャパンディスプレイ 検出装置
CN114582256A (zh) * 2020-12-02 2022-06-03 台湾爱司帝科技股份有限公司 显示模块及其图像显示器
KR102805366B1 (ko) * 2021-01-26 2025-05-12 삼성전자주식회사 광전 변환 소자
CN114823742A (zh) * 2021-01-27 2022-07-29 群创光电股份有限公司 感测装置以及电子装置
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US20200035729A1 (en) 2020-01-30
JP2020017955A (ja) 2020-01-30
US11031424B2 (en) 2021-06-08
KR102593949B1 (ko) 2023-10-27
JP7291561B2 (ja) 2023-06-15
KR20200011689A (ko) 2020-02-04

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