KR102560788B1 - 주변 노광 장치, 주변 노광 방법, 프로그램, 및 컴퓨터 기억 매체 - Google Patents

주변 노광 장치, 주변 노광 방법, 프로그램, 및 컴퓨터 기억 매체 Download PDF

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KR102560788B1
KR102560788B1 KR1020160016401A KR20160016401A KR102560788B1 KR 102560788 B1 KR102560788 B1 KR 102560788B1 KR 1020160016401 A KR1020160016401 A KR 1020160016401A KR 20160016401 A KR20160016401 A KR 20160016401A KR 102560788 B1 KR102560788 B1 KR 102560788B1
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substrate
wafer
exposure
shot
peripheral exposure
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Korean (ko)
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KR20160103927A (ko
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히로시 도미타
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도쿄엘렉트론가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H01L21/0274—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
KR1020160016401A 2015-02-25 2016-02-12 주변 노광 장치, 주변 노광 방법, 프로그램, 및 컴퓨터 기억 매체 Active KR102560788B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-035309 2015-02-25
JP2015035309A JP6308958B2 (ja) 2015-02-25 2015-02-25 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体

Publications (2)

Publication Number Publication Date
KR20160103927A KR20160103927A (ko) 2016-09-02
KR102560788B1 true KR102560788B1 (ko) 2023-07-26

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Country Link
US (1) US9810989B2 (enExample)
JP (1) JP6308958B2 (enExample)
KR (1) KR102560788B1 (enExample)
TW (1) TWI637241B (enExample)

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* Cited by examiner, † Cited by third party
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JP2019021747A (ja) * 2017-07-14 2019-02-07 東京エレクトロン株式会社 基板位置調整方法、記憶媒体及び基板処理システム
CN111650813B (zh) * 2019-03-04 2024-04-16 东京毅力科创株式会社 基板处理装置、基板检查装置及方法、以及记录介质
JP7379104B2 (ja) 2019-03-04 2023-11-14 東京エレクトロン株式会社 基板検査装置、基板処理装置、基板検査方法、及びコンピュータ読み取り可能な記録媒体
TWI848121B (zh) * 2019-06-10 2024-07-11 日商東京威力科創股份有限公司 基板處理裝置、基板檢查方法及記錄媒體
CN112599463B (zh) * 2019-10-02 2024-01-19 佳能株式会社 晶片卡盘、其生产方法和曝光装置
CN113433799B (zh) * 2020-03-23 2023-01-20 长鑫存储技术有限公司 晶圆边缘曝光方法、晶圆边缘曝光装置及掩膜板
JP7648304B2 (ja) 2021-05-11 2025-03-18 東京エレクトロン株式会社 基板検査方法及び基板検査装置
US20240319615A1 (en) * 2023-03-20 2024-09-26 Onto Innovation Inc. Substrate edge patterning techniques
CN120972464A (zh) * 2024-05-15 2025-11-18 盛美半导体设备(上海)股份有限公司 基板处理装置及方法

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JP2012222086A (ja) * 2011-04-06 2012-11-12 Tokyo Electron Ltd 基板処理装置、基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記録媒体
JP2013168429A (ja) * 2012-02-14 2013-08-29 Tokyo Electron Ltd 液処理装置、液処理方法及び記憶媒体
JP2014222761A (ja) 2014-07-01 2014-11-27 東京エレクトロン株式会社 基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記録媒体

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JPH053153A (ja) * 1991-06-24 1993-01-08 Ushio Inc ウエハ上の不要レジスト露光装置
TW316322B (enExample) * 1995-10-02 1997-09-21 Ushio Electric Inc
JP3237522B2 (ja) * 1996-02-05 2001-12-10 ウシオ電機株式会社 ウエハ周辺露光方法および装置
JP3439932B2 (ja) * 1996-10-28 2003-08-25 大日本スクリーン製造株式会社 周辺露光装置
JP3383166B2 (ja) * 1996-09-10 2003-03-04 大日本スクリーン製造株式会社 周辺露光装置
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JPH10256121A (ja) 1997-03-11 1998-09-25 Dainippon Screen Mfg Co Ltd 周辺露光装置および周辺露光方法
KR100256121B1 (ko) 1997-06-20 2000-05-15 김영환 동기식 메모리의 비-지속적 비트별 기록 모드 제어방법 및 그 제어신호 발생장치
JP3356047B2 (ja) * 1997-11-26 2002-12-09 ウシオ電機株式会社 ウエハ周辺露光装置
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JP2012222086A (ja) * 2011-04-06 2012-11-12 Tokyo Electron Ltd 基板処理装置、基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記録媒体
JP2013168429A (ja) * 2012-02-14 2013-08-29 Tokyo Electron Ltd 液処理装置、液処理方法及び記憶媒体
JP2014222761A (ja) 2014-07-01 2014-11-27 東京エレクトロン株式会社 基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記録媒体

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Publication number Publication date
TWI637241B (zh) 2018-10-01
TW201636739A (zh) 2016-10-16
KR20160103927A (ko) 2016-09-02
US20160246187A1 (en) 2016-08-25
US9810989B2 (en) 2017-11-07
JP6308958B2 (ja) 2018-04-11
JP2016157841A (ja) 2016-09-01

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