KR102543263B1 - 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 - Google Patents

촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 Download PDF

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KR102543263B1
KR102543263B1 KR1020227023761A KR20227023761A KR102543263B1 KR 102543263 B1 KR102543263 B1 KR 102543263B1 KR 1020227023761 A KR1020227023761 A KR 1020227023761A KR 20227023761 A KR20227023761 A KR 20227023761A KR 102543263 B1 KR102543263 B1 KR 102543263B1
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electrode
photoelectric conversion
imaging device
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KR20220103203A (ko
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아키라 후루카와
요시히로 안도
히데아키 토가시
후미히코 코가
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소니그룹주식회사
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
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    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
    • H—ELECTRICITY
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    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
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    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
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    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
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    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
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    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
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    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
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    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10H20/8232—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
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  • Semiconductor Memories (AREA)
KR1020227023761A 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 Active KR102543263B1 (ko)

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Application Number Priority Date Filing Date Title
KR1020237016949A KR102628546B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016226658A JP6926450B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子及び固体撮像装置
JPJP-P-2016-226658 2016-11-22
KR1020197013455A KR102422857B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
PCT/JP2017/040938 WO2018096980A2 (en) 2016-11-22 2017-11-14 Imaging element, stacked-type imaging element and solid-state imaging apparatus

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KR1020197013455A Division KR102422857B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

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KR102543263B1 true KR102543263B1 (ko) 2023-06-14

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KR1020197013455A Active KR102422857B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
KR1020237016949A Active KR102628546B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

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KR1020237016949A Active KR102628546B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

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US (3) US11222912B2 (enExample)
JP (1) JP6926450B2 (enExample)
KR (3) KR102543263B1 (enExample)
CN (2) CN109983579B (enExample)
TW (3) TWI782756B (enExample)
WO (1) WO2018096980A2 (enExample)

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JP6926450B2 (ja) * 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
WO2019198385A1 (ja) * 2018-04-09 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその製造方法、電子機器
CN112189259B (zh) * 2018-06-08 2024-03-22 索尼半导体解决方案公司 成像元件、层叠型成像元件和固态成像装置
TWI891386B (zh) * 2018-06-15 2025-07-21 日商索尼股份有限公司 固體攝像元件
EP3813116B1 (en) * 2018-06-15 2024-05-22 Sony Semiconductor Solutions Corporation Imaging device and method for manufacturing same, and electronic apparatus
WO2020008801A1 (ja) * 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
CN112369011B (zh) * 2018-07-03 2024-04-19 索尼半导体解决方案公司 固态摄像装置
TWI840387B (zh) 2018-07-26 2024-05-01 日商索尼股份有限公司 固態攝像元件、固態攝像裝置及固態攝像元件之讀出方法
TWI840383B (zh) * 2018-07-26 2024-05-01 日商索尼半導體解決方案公司 固體攝像裝置
JP2020017688A (ja) 2018-07-27 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP7256808B2 (ja) * 2018-07-30 2023-04-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
CN122318332A (zh) 2018-07-31 2026-06-30 索尼半导体解决方案公司 摄像元件和摄像装置
TW202035577A (zh) * 2018-09-06 2020-10-01 日商富士軟片股份有限公司 結構體、光感測器及圖像顯示裝置
WO2021001719A1 (ja) * 2019-07-04 2021-01-07 株式会社半導体エネルギー研究所 撮像装置および電子機器
CN114402451B (zh) * 2019-11-01 2025-08-22 索尼集团公司 光电转换元件和摄像元件
JP7531272B2 (ja) * 2019-11-15 2024-08-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
AU2021208557A1 (en) * 2020-01-14 2022-09-01 Quantum-Si Incorporated Sensor for lifetime plus spectral characterization
JP7414569B2 (ja) * 2020-02-12 2024-01-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
TW202147591A (zh) 2020-03-02 2021-12-16 美商寬騰矽公司 用於多維信號分析之整合感應器
CN116491127A (zh) * 2020-12-15 2023-07-25 松下知识产权经营株式会社 摄像装置
JP2022190538A (ja) * 2021-06-14 2022-12-26 株式会社ジャパンディスプレイ 検出装置
JP2023005880A (ja) * 2021-06-29 2023-01-18 ソニーセミコンダクタソリューションズ株式会社 光電変換素子、光検出装置、および電子機器
TWI825846B (zh) * 2022-07-13 2023-12-11 力成科技股份有限公司 封裝結構及其製造方法

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JP2007258424A (ja) * 2006-03-23 2007-10-04 Seiko Epson Corp 固体撮像素子の製造方法及び固体撮像素子
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