KR102520523B1 - 웨이퍼의 가공 방법 - Google Patents

웨이퍼의 가공 방법 Download PDF

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Publication number
KR102520523B1
KR102520523B1 KR1020207033283A KR20207033283A KR102520523B1 KR 102520523 B1 KR102520523 B1 KR 102520523B1 KR 1020207033283 A KR1020207033283 A KR 1020207033283A KR 20207033283 A KR20207033283 A KR 20207033283A KR 102520523 B1 KR102520523 B1 KR 102520523B1
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South Korea
Prior art keywords
wafer
cutting line
tape
grinding
back side
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KR1020207033283A
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English (en)
Korean (ko)
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KR20200133022A (ko
Inventor
료스케 가타오카
다카시 다모가미
슈헤이 오시다
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가부시키가이샤 도교 세이미쓰
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020207033283A 2017-11-06 2018-10-29 웨이퍼의 가공 방법 Active KR102520523B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2017-213724 2017-11-06
JP2017213724A JP7157301B2 (ja) 2017-11-06 2017-11-06 ウェーハの加工方法
KR1020207012050A KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법
PCT/JP2018/040067 WO2019088011A1 (ja) 2017-11-06 2018-10-29 ウェーハの加工方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020207012050A Division KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Publications (2)

Publication Number Publication Date
KR20200133022A KR20200133022A (ko) 2020-11-25
KR102520523B1 true KR102520523B1 (ko) 2023-04-12

Family

ID=66331719

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020207033283A Active KR102520523B1 (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법
KR1020207012050A Ceased KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207012050A Ceased KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Country Status (4)

Country Link
US (1) US11075071B2 (enExample)
JP (2) JP7157301B2 (enExample)
KR (2) KR102520523B1 (enExample)
WO (1) WO2019088011A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7460386B2 (ja) * 2020-02-14 2024-04-02 株式会社ディスコ 被加工物の加工方法
JP2023128800A (ja) 2022-03-04 2023-09-14 株式会社ディスコ 分割装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004583A (ja) * 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置
JP2014067970A (ja) 2012-09-27 2014-04-17 Disco Abrasive Syst Ltd 表面保護部材および加工方法
JP2014075560A (ja) * 2012-10-05 2014-04-24 Lintec Corp 表面保護シート
JP2014165462A (ja) 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
JP2015079826A (ja) 2013-10-16 2015-04-23 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP2016225375A (ja) 2015-05-27 2016-12-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP6119550B2 (ja) 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 エキスパンダ、破断装置及び分断方法
JP2017143131A (ja) 2016-02-09 2017-08-17 株式会社ディスコ 被加工物の樹脂被覆方法及び被加工物の加工方法

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JP3832353B2 (ja) 2002-02-15 2006-10-11 松下電器産業株式会社 半導体装置の製造方法
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
JP3624909B2 (ja) 2002-03-12 2005-03-02 浜松ホトニクス株式会社 レーザ加工方法
US7241642B2 (en) * 2004-01-30 2007-07-10 Intel Corporation Mounting and dicing process for wafers
JP2007235068A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP5197037B2 (ja) * 2008-01-30 2013-05-15 株式会社東京精密 バンプが形成されたウェーハを処理するウェーハ処理方法
JP2011054827A (ja) * 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
JP2012104644A (ja) 2010-11-10 2012-05-31 Tokyo Seimitsu Co Ltd ウェーハ破断方法およびウェーハ破断装置
JP5824365B2 (ja) 2012-01-16 2015-11-25 三星ダイヤモンド工業株式会社 脆性材料基板のブレイク方法
US9230862B2 (en) * 2013-05-14 2016-01-05 Texas Instruments Incorporated Wafer die separation
JP5637330B1 (ja) * 2013-07-01 2014-12-10 富士ゼロックス株式会社 半導体片の製造方法、半導体片を含む回路基板および画像形成装置
JP6185792B2 (ja) * 2013-08-29 2017-08-23 三星ダイヤモンド工業株式会社 半導体ウエハの分断方法
JP2016040079A (ja) 2014-08-12 2016-03-24 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法及び分断装置
DE112015006857B4 (de) 2015-08-31 2023-10-05 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzabdeckung zur Verwendung in diesem Verfahren
JP2017079291A (ja) * 2015-10-21 2017-04-27 株式会社ディスコ ウエーハの加工方法
JP6574688B2 (ja) 2015-11-19 2019-09-11 日東電工株式会社 シート状樹脂組成物、積層シート及び半導体装置の製造方法
JP6721325B2 (ja) 2015-12-14 2020-07-15 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
US10453764B2 (en) * 2016-08-11 2019-10-22 Advanced Semiconductor Engineering, Inc. Molding for large panel fan-out package

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004583A (ja) * 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置
JP2014067970A (ja) 2012-09-27 2014-04-17 Disco Abrasive Syst Ltd 表面保護部材および加工方法
JP2014075560A (ja) * 2012-10-05 2014-04-24 Lintec Corp 表面保護シート
JP2014165462A (ja) 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
JP2015079826A (ja) 2013-10-16 2015-04-23 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP6119550B2 (ja) 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 エキスパンダ、破断装置及び分断方法
JP2016225375A (ja) 2015-05-27 2016-12-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP2017143131A (ja) 2016-02-09 2017-08-17 株式会社ディスコ 被加工物の樹脂被覆方法及び被加工物の加工方法

Also Published As

Publication number Publication date
JP2022172109A (ja) 2022-11-15
JP2019087604A (ja) 2019-06-06
WO2019088011A1 (ja) 2019-05-09
KR20200049878A (ko) 2020-05-08
JP7157301B2 (ja) 2022-10-20
KR20200133022A (ko) 2020-11-25
US11075071B2 (en) 2021-07-27
US20200266047A1 (en) 2020-08-20

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