JP7157301B2 - ウェーハの加工方法 - Google Patents

ウェーハの加工方法 Download PDF

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Publication number
JP7157301B2
JP7157301B2 JP2017213724A JP2017213724A JP7157301B2 JP 7157301 B2 JP7157301 B2 JP 7157301B2 JP 2017213724 A JP2017213724 A JP 2017213724A JP 2017213724 A JP2017213724 A JP 2017213724A JP 7157301 B2 JP7157301 B2 JP 7157301B2
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JP
Japan
Prior art keywords
wafer
tape
back surface
grinding
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017213724A
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English (en)
Japanese (ja)
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JP2019087604A5 (enExample
JP2019087604A (ja
Inventor
陵佑 片岡
崇 田母神
修平 押田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP2017213724A priority Critical patent/JP7157301B2/ja
Priority to KR1020207033283A priority patent/KR102520523B1/ko
Priority to KR1020207012050A priority patent/KR20200049878A/ko
Priority to PCT/JP2018/040067 priority patent/WO2019088011A1/ja
Publication of JP2019087604A publication Critical patent/JP2019087604A/ja
Priority to US16/867,126 priority patent/US11075071B2/en
Publication of JP2019087604A5 publication Critical patent/JP2019087604A5/ja
Priority to JP2022125778A priority patent/JP2022172109A/ja
Application granted granted Critical
Publication of JP7157301B2 publication Critical patent/JP7157301B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2017213724A 2017-11-06 2017-11-06 ウェーハの加工方法 Active JP7157301B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2017213724A JP7157301B2 (ja) 2017-11-06 2017-11-06 ウェーハの加工方法
KR1020207033283A KR102520523B1 (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법
KR1020207012050A KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법
PCT/JP2018/040067 WO2019088011A1 (ja) 2017-11-06 2018-10-29 ウェーハの加工方法
US16/867,126 US11075071B2 (en) 2017-11-06 2020-05-05 Method for processing wafer
JP2022125778A JP2022172109A (ja) 2017-11-06 2022-08-05 ウェーハの加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017213724A JP7157301B2 (ja) 2017-11-06 2017-11-06 ウェーハの加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022125778A Division JP2022172109A (ja) 2017-11-06 2022-08-05 ウェーハの加工方法

Publications (3)

Publication Number Publication Date
JP2019087604A JP2019087604A (ja) 2019-06-06
JP2019087604A5 JP2019087604A5 (enExample) 2021-04-15
JP7157301B2 true JP7157301B2 (ja) 2022-10-20

Family

ID=66331719

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017213724A Active JP7157301B2 (ja) 2017-11-06 2017-11-06 ウェーハの加工方法
JP2022125778A Pending JP2022172109A (ja) 2017-11-06 2022-08-05 ウェーハの加工方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022125778A Pending JP2022172109A (ja) 2017-11-06 2022-08-05 ウェーハの加工方法

Country Status (4)

Country Link
US (1) US11075071B2 (enExample)
JP (2) JP7157301B2 (enExample)
KR (2) KR20200049878A (enExample)
WO (1) WO2019088011A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7460386B2 (ja) * 2020-02-14 2024-04-02 株式会社ディスコ 被加工物の加工方法
JP2023128800A (ja) 2022-03-04 2023-09-14 株式会社ディスコ 分割装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243344A (ja) 2002-02-15 2003-08-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2012104644A (ja) 2010-11-10 2012-05-31 Tokyo Seimitsu Co Ltd ウェーハ破断方法およびウェーハ破断装置
JP2013004583A (ja) 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置
JP2014165462A (ja) 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
JP2016225375A (ja) 2015-05-27 2016-12-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP2017098331A (ja) 2015-11-19 2017-06-01 日東電工株式会社 シート状樹脂組成物、積層シート及び半導体装置の製造方法
WO2017104670A1 (ja) 2015-12-14 2017-06-22 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3624909B2 (ja) 2002-03-12 2005-03-02 浜松ホトニクス株式会社 レーザ加工方法
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
US7241642B2 (en) * 2004-01-30 2007-07-10 Intel Corporation Mounting and dicing process for wafers
JP2007235068A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP5197037B2 (ja) * 2008-01-30 2013-05-15 株式会社東京精密 バンプが形成されたウェーハを処理するウェーハ処理方法
JP2011054827A (ja) * 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
JP5824365B2 (ja) 2012-01-16 2015-11-25 三星ダイヤモンド工業株式会社 脆性材料基板のブレイク方法
JP6061590B2 (ja) * 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法
JP6059499B2 (ja) * 2012-10-05 2017-01-11 リンテック株式会社 表面保護シート
US9230862B2 (en) * 2013-05-14 2016-01-05 Texas Instruments Incorporated Wafer die separation
JP5637329B1 (ja) * 2013-07-01 2014-12-10 富士ゼロックス株式会社 半導体片の製造方法、半導体片を含む回路基板および画像形成装置
JP6185792B2 (ja) * 2013-08-29 2017-08-23 三星ダイヤモンド工業株式会社 半導体ウエハの分断方法
JP6119550B2 (ja) * 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 エキスパンダ、破断装置及び分断方法
JP6119551B2 (ja) * 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP2016040079A (ja) 2014-08-12 2016-03-24 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法及び分断装置
WO2017036512A1 (en) 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
JP2017079291A (ja) * 2015-10-21 2017-04-27 株式会社ディスコ ウエーハの加工方法
JP6621338B2 (ja) * 2016-02-09 2019-12-18 株式会社ディスコ 被加工物の樹脂被覆方法及び被加工物の加工方法
US10453764B2 (en) * 2016-08-11 2019-10-22 Advanced Semiconductor Engineering, Inc. Molding for large panel fan-out package

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243344A (ja) 2002-02-15 2003-08-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2012104644A (ja) 2010-11-10 2012-05-31 Tokyo Seimitsu Co Ltd ウェーハ破断方法およびウェーハ破断装置
JP2013004583A (ja) 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置
JP2014165462A (ja) 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
JP2016225375A (ja) 2015-05-27 2016-12-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP2017098331A (ja) 2015-11-19 2017-06-01 日東電工株式会社 シート状樹脂組成物、積層シート及び半導体装置の製造方法
WO2017104670A1 (ja) 2015-12-14 2017-06-22 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JP2022172109A (ja) 2022-11-15
WO2019088011A1 (ja) 2019-05-09
KR20200049878A (ko) 2020-05-08
US11075071B2 (en) 2021-07-27
JP2019087604A (ja) 2019-06-06
KR102520523B1 (ko) 2023-04-12
KR20200133022A (ko) 2020-11-25
US20200266047A1 (en) 2020-08-20

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