WO2017104670A1 - 熱硬化性接着シート、及び半導体装置の製造方法 - Google Patents
熱硬化性接着シート、及び半導体装置の製造方法 Download PDFInfo
- Publication number
- WO2017104670A1 WO2017104670A1 PCT/JP2016/087090 JP2016087090W WO2017104670A1 WO 2017104670 A1 WO2017104670 A1 WO 2017104670A1 JP 2016087090 W JP2016087090 W JP 2016087090W WO 2017104670 A1 WO2017104670 A1 WO 2017104670A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mass
- adhesive sheet
- thermosetting adhesive
- parts
- resin component
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 60
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 71
- 239000011347 resin Substances 0.000 claims abstract description 71
- 239000004593 Epoxy Substances 0.000 claims abstract description 48
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 32
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- 239000000945 filler Substances 0.000 claims abstract description 29
- 239000011342 resin composition Substances 0.000 claims abstract description 25
- 239000012790 adhesive layer Substances 0.000 claims abstract description 21
- 238000002156 mixing Methods 0.000 claims abstract description 13
- 229920001187 thermosetting polymer Polymers 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 52
- 238000000227 grinding Methods 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 238000013329 compounding Methods 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 238000001723 curing Methods 0.000 description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 238000011156 evaluation Methods 0.000 description 32
- 239000003822 epoxy resin Substances 0.000 description 22
- 229920000647 polyepoxide Polymers 0.000 description 22
- -1 polyethylene terephthalate Polymers 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 18
- 229920001971 elastomer Polymers 0.000 description 17
- 239000010410 layer Substances 0.000 description 17
- 239000000806 elastomer Substances 0.000 description 16
- 125000003700 epoxy group Chemical group 0.000 description 16
- 239000002390 adhesive tape Substances 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 12
- 229910002012 Aerosil® Inorganic materials 0.000 description 11
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 11
- 230000001629 suppression Effects 0.000 description 11
- 239000007822 coupling agent Substances 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 229920006287 phenoxy resin Polymers 0.000 description 7
- 239000013034 phenoxy resin Substances 0.000 description 7
- 239000003094 microcapsule Substances 0.000 description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 229920000573 polyethylene Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004745 nonwoven fabric Substances 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- KSIFCIGYWZLLRY-UHFFFAOYSA-N 2-[(2-ethylphenoxy)methyl]oxirane Chemical compound CCC1=CC=CC=C1OCC1OC1 KSIFCIGYWZLLRY-UHFFFAOYSA-N 0.000 description 1
- KFUSXMDYOPXKKT-UHFFFAOYSA-N 2-[(2-methylphenoxy)methyl]oxirane Chemical compound CC1=CC=CC=C1OCC1OC1 KFUSXMDYOPXKKT-UHFFFAOYSA-N 0.000 description 1
- STHCTMWQPJVCGN-UHFFFAOYSA-N 2-[[2-[1,1,2-tris[2-(oxiran-2-ylmethoxy)phenyl]ethyl]phenoxy]methyl]oxirane Chemical compound C1OC1COC1=CC=CC=C1CC(C=1C(=CC=CC=1)OCC1OC1)(C=1C(=CC=CC=1)OCC1OC1)C1=CC=CC=C1OCC1CO1 STHCTMWQPJVCGN-UHFFFAOYSA-N 0.000 description 1
- OFAVNQMEQSOEOW-UHFFFAOYSA-N 2-[[2-[1,1,2-tris[2-(oxiran-2-ylmethoxymethyl)phenyl]ethyl]phenyl]methoxymethyl]oxirane Chemical compound C1OC1COCC1=CC=CC=C1CC(C=1C(=CC=CC=1)COCC1OC1)(C=1C(=CC=CC=1)COCC1OC1)C1=CC=CC=C1COCC1CO1 OFAVNQMEQSOEOW-UHFFFAOYSA-N 0.000 description 1
- RPADUWFZMICOIF-UHFFFAOYSA-N 2-[[2-[tris[2-(oxiran-2-ylmethoxy)phenyl]methyl]phenoxy]methyl]oxirane Chemical compound C1OC1COC1=CC=CC=C1C(C=1C(=CC=CC=1)OCC1OC1)(C=1C(=CC=CC=1)OCC1OC1)C1=CC=CC=C1OCC1CO1 RPADUWFZMICOIF-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- VEORPZCZECFIRK-UHFFFAOYSA-N 3,3',5,5'-tetrabromobisphenol A Chemical compound C=1C(Br)=C(O)C(Br)=CC=1C(C)(C)C1=CC(Br)=C(O)C(Br)=C1 VEORPZCZECFIRK-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
- B32B3/08—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/02—2 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/584—Scratch resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/714—Inert, i.e. inert to chemical degradation, corrosion
- B32B2307/7145—Rot proof, resistant to bacteria, mildew, mould, fungi
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2405/00—Adhesive articles, e.g. adhesive tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/20—Presence of organic materials
- C09J2400/22—Presence of unspecified polymer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Definitions
- the present invention relates to a thermosetting adhesive sheet for reinforcing a semiconductor wafer and a method for manufacturing a semiconductor device in order to prevent cracks during the dicing process.
- the dicing (individualization) process gives a great stress to the semiconductor wafer. For this reason, cracks called chipping occur in the semiconductor wafer, and the defect rate may increase.
- thermosetting adhesive sheet that reinforces the semiconductor wafer immediately before the dicing process (after back grinding) (see, for example, Patent Document 1).
- thermosetting adhesive sheet capable of reducing warpage of a semiconductor wafer and occurrence of chipping
- a method for manufacturing a semiconductor device I will provide a.
- thermosetting adhesive sheet is a thermosetting adhesive layer formed from a resin composition containing an epoxy compound, a resin component containing a curing agent, and a filler.
- the sum of the values obtained by multiplying the reciprocal of the epoxy equivalent of the epoxy compound by the content of the epoxy compound in the resin component is 1.15E-04 or more, and the blending amount of the filler is a resin component It is 50 mass parts or more with respect to 100 mass parts.
- the semiconductor device manufacturing method reduces the amount of warpage of the semiconductor wafer by grinding a semiconductor wafer, and bonding and curing a thermosetting adhesive sheet on the polished surface of the semiconductor wafer.
- a curing step and a dicing step of dicing and dicing a dicing tape on the thermosetting adhesive sheet surface of the semiconductor wafer, and the thermosetting adhesive sheet includes an epoxy compound and a resin component containing a curing agent; The total of the values obtained by multiplying the reciprocal of the epoxy equivalent of the epoxy compound by the content of the epoxy compound in the resin component, having a thermosetting adhesive layer formed from a resin composition containing a filler, 1.15E-04 or more, and the amount of the filler is 50 parts by mass or more with respect to 100 parts by mass of the resin component.
- thermosetting adhesive sheet contracts and the warp of the semiconductor wafer can be reduced by bonding the thermosetting adhesive sheet to the polished surface of the semiconductor wafer and curing it. For this reason, dicing can be performed with the wafer flattened, so that chipping can be reduced and a high-quality semiconductor device can be obtained.
- FIG. 1 is a cross-sectional view schematically showing a thermosetting adhesive sheet.
- FIG. 2 is a cross-sectional view showing an outline of the BG tape attaching step.
- FIG. 3 is a cross-sectional view showing an outline of a grinding process.
- FIG. 4 is a cross-sectional view showing an outline of a thermosetting adhesive sheet attaching step.
- FIG. 5 is a cross-sectional view schematically showing the BG tape peeling step.
- FIG. 6 is a cross-sectional view schematically showing the curing process.
- FIG. 7 is a cross-sectional view showing an outline of the DC tape attaching step.
- FIG. 8 is a cross-sectional view schematically showing the dicing process.
- FIG. 9 is a cross-sectional view showing an outline of the expanding process.
- FIG. 10 is a cross-sectional view schematically showing the pickup process.
- FIG. 11 is a cross-sectional view schematically showing the mounting process.
- thermosetting adhesive sheet has a thermosetting adhesive layer that is bonded to the polishing surface of the semiconductor wafer when dicing the semiconductor wafer and reinforces the wafer during the dicing process, which is called chipping. This is a reinforcing sheet for preventing cracks.
- FIG. 1 is a cross-sectional view showing an outline of a thermosetting adhesive sheet. As shown in FIG. 1, the thermosetting adhesive sheet has a base film layer 11 and a thermosetting adhesive layer 12 laminated.
- a porous substrate made of a plastic film such as polyethylene terephthalate, polyethylene, polypropylene, or polyester, paper, cloth, nonwoven fabric, or the like can be used.
- the thermosetting adhesive layer 12 is formed from a resin composition containing an epoxy compound, a resin component containing a curing agent, and a filler.
- Examples of the epoxy compound include glycidyl such as tetrakis (glycidyloxyphenyl) ethane, tetrakis (glycidyloxymethylphenyl) ethane, tetrakis (glycidyloxyphenyl) methane, trikis (glycidyloxyphenyl) ethane, and trikis (glycidyloxyphenyl) methane.
- glycidyl such as tetrakis (glycidyloxyphenyl) ethane, tetrakis (glycidyloxymethylphenyl) ethane, tetrakis (glycidyloxyphenyl) methane, trikis (glycidyloxyphenyl) ethane, and trikis (glycidyloxyphenyl) methane.
- Ether type epoxy resin dicyclopentadiene type epoxy resin, glycidylamine type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, spiro ring type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy Resin, terpene type epoxy resin, tetrabromobisphenol A type epoxy resin, cresol novolac type epoxy resin, phenol novolac type Epoxy resins, alpha-naphthol novolak type epoxy resin, and the like brominated phenol novolak type epoxy resin. These epoxy resins may be used alone or in combination of two or more.
- the sum of values obtained by multiplying the reciprocal of the epoxy equivalent of the epoxy compound by the content of the epoxy compound in the resin component that is, the number of moles of epoxy groups per 100 parts by mass of the resin component is 1.15E ⁇ 04 or more, and preferably 1.20E-04 or more and 2.00E-03 or less.
- the number of moles of epoxy groups per 100 parts by mass of the resin component is 1.15E-04 or more, the thermosetting adhesive layer is greatly contracted, and the warpage of the semiconductor wafer can be reduced.
- the number of moles of the epoxy group per 100 parts by mass of the resin component is calculated by the following equation (1).
- the epoxy equivalent is the mass (g / eq) of a resin containing 1 equivalent of an epoxy group, measured by a method standardized in JIS K7236: 2001.
- the curing agent imidazoles, polyhydric phenols, acid anhydrides, amines, hydrazides, polymercaptans, Lewis acid-amine complexes, latent curing agents and the like can be used.
- a latent curing agent having excellent storage stability and heat resistance of a cured product is preferably used.
- latent curing agents dicyandiamide type latent curing agent, amine adduct type latent curing agent, organic acid hydrazide type latent curing agent, aromatic sulfonium salt type latent curing agent, microcapsule type latent curing agent, light Examples thereof include curable latent curing agents.
- a microcapsule type latent curing agent having excellent storage stability is preferably used.
- the microcapsule type latent curing agent include those obtained by encapsulating each of the above curing accelerators with a vinyl compound, a urea compound, or a thermoplastic resin.
- trade name “Novacure HX-3941HP” of Asahi Kasei Chemicals Co., Ltd. (a microcapsule type latent product obtained by treating an amine adduct type latent curing agent with isocyanate) Curing agent).
- thermosetting adhesive layer 12 may include a polymer as a film forming resin such as an elastomer or a phenoxy resin as a resin component.
- a polymer as a film forming resin such as an elastomer or a phenoxy resin as a resin component.
- the elastomer include acrylic elastomers, butadiene elastomers, ethylene elastomers, propylene elastomers, and styrene elastomers, and one or more of these can be used. Among these, it is preferable to use an acrylic elastomer having excellent transparency. Specific examples of the acrylic elastomer available on the market include “SG-P3”, a trade name of Nagase ChemteX Corporation.
- phenoxy resin examples include a fluorene type phenoxy resin, a bisphenol type phenoxy resin, a novolac type phenoxy resin, a naphthalene type phenoxy resin, a biphenyl type phenoxy resin, and the like. One or more of these may be used. it can.
- the weight average molecular weight (Mw) of the polymer is preferably 5000 or more and 150,000 or less, more preferably 10,000 or more and 80000 or less. If the weight average molecular weight (Mw) is too small, the sheet characteristics tend to deteriorate, and if too large, the compatibility with other components tends to deteriorate.
- the content of the polymer in the resin component is preferably less than 15 wt%, more preferably less than 10%.
- the warp controllability of the wafer tends to decrease.
- silane coupling agent As the silane coupling agent, (meth) acrylic, epoxy-based, amino-based, mercapto-based, sulfide-based, ureido-based, etc. can be used, but in this embodiment, an epoxy-based silane coupling agent is preferably used. It is done. Thereby, the adhesion reliability in the interface of an organic material and an inorganic material can be improved.
- the filler either inorganic or organic can be used, and it is preferable to use a material having transparency to infrared rays used in alignment.
- the material having transparency to infrared rays include silica, silicon, germanium, quartz, sapphire, and the like, and one or more of these can be used. Among these, it is preferable to use silica from the viewpoint of laser mark visibility.
- the compounding quantity of a filler is 50 mass parts or more with respect to 100 mass parts of resin components, and it is preferable that they are 50 mass parts or more and 100 mass parts or less. If the filler content is too small, the effect of reducing the amount of warpage of the wafer tends to be reduced, and if too much, the adhesion reliability tends to be reduced.
- a colorant such as a black pigment as another filler.
- the colorant causes a contrast difference between the laser marking portion and other portions, and improves the laser mark visibility.
- examples of such a colorant include carbon black, titanium black, titanium oxide, iron oxide, and the like, and one or more of these can be used. Among these, it is preferable to use carbon black from the viewpoint of improving the contrast difference.
- the transmittance of the thermosetting adhesive sheet at a wavelength of 1000 nm is preferably 30% or more. If the infrared transmittance is too low, it is difficult to perform alignment using infrared rays.
- thermosetting adhesive sheet shrinks by being bonded to the polished surface of the semiconductor wafer and cured, and the warpage of the semiconductor wafer can be reduced. For this reason, dicing can be performed with the wafer flattened, so that chipping can be reduced and a high-quality semiconductor device can be obtained.
- the method for manufacturing a semiconductor device includes a grinding process for polishing a semiconductor wafer, a process for bonding a thermosetting adhesive sheet to the polishing surface of the semiconductor wafer and curing the semiconductor wafer, and reducing the amount of warpage of the semiconductor wafer. And a dicing process in which a dicing tape is bonded to the thermosetting adhesive sheet surface of the semiconductor wafer and diced. Since warping of the semiconductor wafer is reduced and dicing is possible with the wafer flattened, chipping can be reduced and a high-quality semiconductor device can be obtained.
- the manufacturing method of the semiconductor device shown as a specific example includes a protective tape attaching step (A) for applying a protective tape having an adhesive layer, a grinding step (B), a thermosetting resin sheet attaching step (C), and a protection Tape peeling step (D), curing step (E), adhesive tape attaching step (F), dicing step (G), expanding step (H), pick-up step (I), and mounting step (J ).
- FIG. 2 is a cross-sectional view showing an outline of the protective tape attaching step.
- the protective tape 30 is attached to the surface of the wafer 21 on which the protruding electrodes 22 are formed.
- Affixing temperature for applying the protective tape 30 is 25 ° C. or higher and 100 ° C. or lower, preferably 40 ° C. or higher and 80 ° C. or lower, from the viewpoint of reducing voids, improving wafer adhesion and preventing warpage after wafer grinding.
- the wafer 21 has an integrated circuit formed on a semiconductor surface such as silicon, and a protruding electrode 22 for connection called a bump.
- the thickness of the wafer 21 is not particularly limited, but is preferably 200 ⁇ m or more and 1000 ⁇ m or less.
- the protruding electrode 22 is not particularly limited, and examples thereof include a low melting point bump or a high melting point bump made of solder, a tin bump, a silver-tin bump, a silver-tin-copper bump, a gold bump, and a copper bump.
- the height of the protruding electrode 22 is not particularly limited, but is preferably 10 ⁇ m or more and 200 ⁇ m or less.
- the protective tape 30 is called a back grind tape, and protects the wafer from scratches, cracks, contamination, etc. in the next grinding process (B).
- the protective tape 30 is formed by laminating a thermoplastic resin layer 31 and a base film layer 32, and bonding them so that the formation surface of the protruding electrode 22 and the thermoplastic resin layer 31 are in contact with each other.
- the electrode 22 is embedded in the thermoplastic resin layer 31.
- thermoplastic resin layer 31 ethylene vinyl acetate copolymer (EVA), polyethylene, polypropylene, polyamide, polyacetal, polyethylene terephthalate, polybutylene terephthalate, fluororesin, polyphenylene sulfide, polystyrene, ABS resin, acrylic type Resins, polycarbonates, polyurethanes, polyvinyl chlorides, polyphenylene oxides and the like may be mentioned. These may be used alone or in combination of two or more.
- EVA ethylene vinyl acetate copolymer
- a plastic substrate such as polyethylene terephthalate, polyethylene, polypropylene, polyester, or a porous substrate made of paper, cloth, nonwoven fabric, or the like can be used.
- the protective tape 30 is not limited to the above-described configuration, and other layers may be formed on the surface of each layer or between adjacent layers.
- FIG. 3 is a cross-sectional view showing an outline of a grinding process.
- the surface opposite to the surface to which the protective tape 30 is applied is ground.
- the opposite surface of the wafer 21 to which the protective tape 30 is attached is fixed to a grinding device for polishing.
- the thickness of the wafer 21 by polishing is 200 ⁇ m or less, and further 50 ⁇ m or less.
- the warpage amount of the wafer 21 is the maximum value of the warpage (Z axis) when the wafer 21 is placed on the flat stage (X, Y axes).
- FIG. 4 is a cross-sectional view showing an outline of a thermosetting adhesive sheet attaching step.
- the thermosetting adhesive layer 12 of the thermosetting adhesive sheet is attached to the grind treated surface of the wafer 21.
- FIG. 5 is a cross-sectional view schematically showing the protective tape peeling step.
- the protective tape 30 is peeled off.
- FIG. 6 is a cross-sectional view schematically showing the curing process.
- the thermosetting adhesive layer 12 is cured.
- a known method for curing a thermosetting adhesive can be used.
- the thermosetting adhesive layer 12 can be cured by curing at a temperature of 80 to 200 ° C. for a time of 0.1 to 5 hours.
- the thermosetting adhesive layer 12 is greatly contracted, and stress in a direction opposite to the warp of the wafer 21 is generated, so that the wafer 21 can be maintained in a flat state.
- FIG. 7 is a cross-sectional view schematically showing the adhesive tape attaching step.
- the adhesive tape 40 is applied to the grinding surface.
- the adhesive tape 40 is called a dicing tape, and is a tape for protecting and fixing the wafer 21 in the dicing process (G) and holding it until the pickup process (I).
- the adhesive tape 40 is not particularly limited, and a known tape can be used.
- the adhesive tape 40 has an adhesive layer and a base film layer.
- the pressure-sensitive adhesive layer include polyethylene-based, acrylic-based, rubber-based, and urethane-based pressure-sensitive adhesives.
- the porous base material which consists of plastic films, such as a polyethylene terephthalate, polyethylene, a polypropylene, polyester, paper, cloth, a nonwoven fabric, etc. can be used.
- it does not specifically limit as an adhesive tape sticking apparatus and conditions A well-known apparatus and conditions are used.
- FIG. 8 is a cross-sectional view schematically showing the dicing process.
- the wafer 21 with the adhesive tape 40 attached is diced to obtain individual semiconductor chips.
- the dicing method is not particularly limited, and a known method such as cutting the wafer 21 with a dicing saw can be used. Since the thermosetting adhesive sheet reduces the warpage of the wafer, dicing can be performed with the wafer flattened, and chipping can be reduced.
- FIG. 9 is a cross-sectional view showing an outline of the expanding process.
- the adhesive tape 40 to which a plurality of divided semiconductor chips are attached is elongated in the radial direction to widen the intervals between the individual semiconductor chips.
- FIG. 10 is a cross-sectional view schematically showing the pickup process.
- the semiconductor chip adhered and fixed on the adhesive tape 40 is pushed up from the lower surface of the adhesive tape 40 and peeled off, and the peeled semiconductor chip is adsorbed by a collet.
- the picked-up semiconductor chip is stored in a chip tray or conveyed to a chip mounting nozzle of a flip chip bonder.
- FIG. 11 is a cross-sectional view schematically showing the mounting process.
- the semiconductor chip and the circuit board are connected using a circuit connection material such as NCF (Non Conductive Film).
- NCF Non Conductive Film
- plastic substrates such as a polyimide substrate and a glass epoxy substrate, a ceramic substrate, etc. can be used.
- connection method the well-known method using a heating bonder, a reflow furnace, etc. can be used.
- thermosetting adhesive sheet is bonded to the polishing surface of the semiconductor wafer and cured, and the amount of warpage of the semiconductor wafer is reduced, so that chipping is suppressed and dicing is easily performed. be able to.
- thermosetting adhesive sheet was prepared, and this was bonded to a patterned wafer in which warpage occurred, thereby preparing a laminate. And the film film property of a thermosetting adhesive sheet, the chipping suppression at the time of dicing, and the controllability of the curvature of a wafer were evaluated.
- thermosetting adhesive sheet The following components were blended to prepare a resin composition. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce a thermosetting adhesive sheet having a thermosetting adhesive layer having a thickness of 20 ⁇ m ( Cover peeling PET (25 ⁇ m) / thermosetting adhesive layer (20 ⁇ m) / base peeling PET (50 ⁇ m)).
- JER1009 Bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, epoxy equivalent 2850)
- JER1031S Tetraphenylolethane type epoxy resin (Mitsubishi Chemical Corporation, epoxy equivalent 200)
- JEYL980 Liquid bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, epoxy equivalent 185)
- Novacure HX-3941HP Microcapsule type latent curing agent obtained by treating amine adduct type latent curing agent with isocyanate (Asahi Kasei E-Materials Co., Ltd.)
- A-187 Epoxy silane coupling agent (Momentive Performance Materials Japan GK)
- SG-P3 Elastomer (manufactured by Nagase ChemteX Corporation) Aerosil R202: Silica (Nippon Aerosil Co., Ltd.) # 3050B: Carbon black (Mitsubishi Chemical Corporation)
- thermosetting adhesive layer having a thickness of 20 ⁇ m was bonded onto the patterned wafer with a press and cured under conditions of 180 ° C. and 1 h to obtain a laminate.
- the 8-inch wafer with a thickness of 200 ⁇ m was used as the patterned wafer. Further, the average warpage amount (number of samples: 10) of the patterned wafer was 4 mm. The warpage amount of the patterned wafer was the maximum value of the warpage (Z axis) when the patterned wafer was placed on the flat stage (X, Y axes).
- thermosetting adhesive sheet The film property, tack property, and laminate property of the thermosetting adhesive sheet are evaluated. When all the evaluations are good, it is evaluated as “A”, the film property is good, and either the tack property or the laminate property is evaluated. A case where the evaluation was poor was evaluated as “B”, and a case other than these was evaluated as “C”.
- the warpage amount of the laminated body was set to the maximum value of the warpage (Z axis) when the laminated body was placed on the planar stage (X, Y axes). 1. “A” when the warp amount of the laminate is less than 1.0 mm, “B” when the warp amount of the laminate is 1.0 mm or more and less than 1.5 mm, and 1.5 mm or more. Those having a thickness of less than 5 mm were evaluated as “C”, and those having a warped amount of 2.5 mm or more were evaluated as “D”.
- Example 1 As shown in Table 1, 39 parts by mass of a solid epoxy compound (JER1009), 60 parts by mass of a curing agent (HX-3941HP), and 1 part by mass of a coupling agent (A-187) were added to 100 parts by mass of a resin component. 80 parts by mass of silica (Aerosil R202) was added to prepare a resin composition. The number of moles of epoxy groups per 100 parts by mass of the resin component was 1.368E-04, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 80 parts by mass. Evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was A, evaluation of chipping suppression during dicing was B, and evaluation of thin wafer warpage controllability was B.
- Example 2 As shown in Table 1, 38 parts by mass of a solid epoxy compound (JER1009), 59 parts by mass of a curing agent (HX-3941HP), and 1 part by mass of a coupling agent (A-187) were added to 100 parts by mass of a resin component. Then, 80 parts by mass of silica (Aerosil R202) and 2 parts by mass of carbon black were added to prepare a resin composition. The number of moles of epoxy group per 100 parts by mass of the resin component was 1.361E-04, and the amount of filler added relative to 100 parts by mass of the resin component was 82 parts by mass. Evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was A, evaluation of chipping suppression during dicing was B, and evaluation of thin wafer warpage controllability was B.
- Example 3 As shown in Table 1, 100 parts by mass of a resin component containing 32 parts by mass of a polyfunctional solid epoxy compound (JER1031S), 67 parts by mass of a curing agent (HX-3941HP), and 1 part by mass of a coupling agent (A-187) 80 parts by mass of silica (Aerosil R202) was added to a part to prepare a resin composition.
- the number of moles of epoxy groups per 100 parts by mass of the resin component was 1.600E-03, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 80 parts by mass.
- the evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was A, the evaluation of chipping suppression during dicing was B, and the evaluation of thin wafer warpage controllability was A.
- Example 4 As shown in Table 1, 35 parts by mass of a polyfunctional solid epoxy compound (JER1009), 4 parts by mass of a polyfunctional liquid epoxy compound, 60 parts by mass of a curing agent (HX-3941HP), and a coupling agent (A-187) A resin composition was prepared by adding 80 parts by mass of silica (Aerosil R202) to 100 parts by mass of the resin component containing 1 part by mass. The number of moles of epoxy groups per 100 parts by mass of the resin component was 3.390E-04, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 80 parts by mass. Evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was B, evaluation of chipping suppression during dicing was A, and evaluation of thin wafer warpage controllability was A.
- Example 5 As shown in Table 1, 90 parts by mass of a resin component containing 34 parts by mass of a polyfunctional solid epoxy compound (JER1009), 55 parts by mass of a curing agent (HX-3941HP), and 1 part by mass of a coupling agent (A-187) 50 parts by mass of silica (Aerosil R202) was added to a part to prepare a resin composition.
- the number of moles of epoxy groups per 100 parts by mass of the resin component was 1.326E-04, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 56 parts by mass.
- the evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was A, the evaluation of chipping suppression during dicing was A, and the evaluation of thin wafer warpage controllability was A.
- the polyfunctional solid epoxy compound (JER1009) was 34 parts by mass
- the curing agent (HX-3941HP) was 55 parts by mass
- the coupling agent (A-187) was 1 part by mass
- the elastomer was 5 parts by mass.
- 80 parts by mass of silica (Aerosil R202) was added to 95 parts by mass of the blended resin component to prepare a resin composition.
- the number of moles of the epoxy group per 100 parts by mass of the resin component was 1.256E-04, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 84 parts by mass.
- the elastomer content in the resin component was 5 wt%.
- the evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was A
- the evaluation of chipping suppression during dicing was A
- the evaluation of thin wafer warpage controllability was A.
- Example 7 As shown in Table 1, the polyfunctional solid epoxy compound (JER1009) was 34 parts by mass, the curing agent (HX-3941HP) was 55 parts by mass, the coupling agent (A-187) was 1 part by mass, and the elastomer was 10 parts by mass. 80 parts by mass of silica (Aerosil R202) was added to 100 parts by mass of the blended resin component to prepare a resin composition. The number of moles of the epoxy group per 100 parts by mass of the resin component was 1.193E-04, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 80 parts by mass. Further, the content of the elastomer in the resin component was 10 wt%. Evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was A, evaluation of chipping suppression during dicing was A, and evaluation of thin wafer warpage controllability was B.
- the polyfunctional solid epoxy compound (JER1009) was 34 parts by mass
- the curing agent (HX-3941HP) was 55 parts by mass
- the coupling agent (A-187) was 1 part by mass
- the elastomer was 10 parts by mass.
- 30 parts by mass of silica (Aerosil R202) was added to 100 parts by mass of the blended resin component to prepare a resin composition.
- the number of moles of epoxy groups per 100 parts by mass of the resin component was 1.193E-04, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 30 parts by mass.
- the content of the elastomer in the resin component was 10 wt%.
- Evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was B
- evaluation of chipping suppression during dicing was B
- evaluation of thin wafer warpage controllability was C.
- ⁇ Comparative example 2> As shown in Table 1, 34 parts by mass of polyfunctional solid epoxy compound (JER1009), 55 parts by mass of curing agent (HX-3941HP), 1 part by mass of coupling agent (A-187), and 15 parts by mass of elastomer 80 parts by mass of silica (Aerosil R202) was added to 105 parts by mass of the blended resin component to prepare a resin composition.
- the number of moles of epoxy groups per 100 parts by mass of the resin component was 1.136E-04, and the blending amount of the filler with respect to 100 parts by mass of the resin component was 76 parts by mass.
- the elastomer content in the resin component was 15 wt%.
- the evaluation of the film film property of the thermosetting adhesive sheet produced using this resin composition was A, the evaluation of chipping suppression during dicing was B, and the evaluation of thin wafer warpage controllability was C.
- the number of moles of epoxy groups per 100 parts by mass of the resin component is 1.15E-04 or more, and the blending amount of the filler is 50 parts by mass or more relative to 100 parts by mass of the resin component.
- the shrinkage of the thermosetting adhesive sheet increased, and the amount of warpage of the wafer could be greatly reduced.
- dicing can be performed with the wafer flattened, so that the occurrence of chipping can be greatly reduced.
- Example 6, Example 7, and Comparative Example 2 it was found that when the content of the elastomer in the resin component increases, the warpage controllability of the wafer decreases.
- thermosetting adhesive layer 11 base film layer, 12 thermosetting adhesive layer, 21 wafer, 22 protruding electrode, 30 protective tape, 31 thermoplastic resin layer, 32 base film layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
Abstract
Description
1.熱硬化性接着シート
2.半導体装置の製造方法
3.実施例
本実施の形態に係る熱硬化性接着シートは、半導体ウエハをダイシングする際に、半導体ウエハの研磨面に貼り合わされる熱硬化性接着層を有し、ダイシング工程時にウエハを補強し、チッピングと呼ばれるクラックを防止する補強シートである。
ここで、エポキシ当量は、JIS K7236:2001で規格化された方法により測
定された、1当量のエポキシ基を含む樹脂の質量(g/eq)である。
次に、前述の熱硬化性接着シートを用いた半導体装置の製造方法について説明する。本実施の形態に係る半導体装置の製造方法は、半導体ウエハを研磨するグラインド工程と、半導体ウエハの研磨面に熱硬化性接着シートを貼り合わせて硬化させ、半導体ウエハの反り量を低減させる工程と、半導体ウエハの熱硬化性接着シート面にダイシングテープを貼り合わせ、ダイシングするダイシング工程とを有する。半導体ウエハの反りを低減させ、ウエハを平坦化させた状態でダイシングが可能となるため、チッピングを低減させ、高品質な半導体装置を得ることができる。
図2は、保護テープ貼付工程の概略を示す断面図である。保護テープ貼付工程では、突起電極22が形成されたウエハ21面に保護テープ30を貼り付ける。保護テープ30を貼り付ける貼付温度は、ボイドの減少、ウエハ密着性の向上およびウエハ研削後の反り防止の観点から、25℃以上100℃以下、好ましくは40℃以上80℃以下である。
図3は、グラインド工程の概略を示す断面図である。グラインド工程では、保護テープ30貼付面の反対面をグラインド処理する。保護テープ30を貼り付けたウエハ21の反対面を研削装置に固定して研磨する。このグラインド工程において、研磨によりウエハ21の厚さは、200μm以下、さらには50μm以下である。ウエハ21の厚さを小さくすればするほど、ウエハ21の反り量が大きくなる。なお、ウエハ21の反り量は、平面ステージ(X,Y軸)にウエハ21を置いたときの反り(Z軸)の最大値である。
図4は、熱硬化性接着シート貼付工程の概略を示す断面図である。熱硬化性接着シート貼付工程では、ウエハ21のグラインド処理面に熱硬化性接着シートの熱硬化性接着層12を貼付する。
図5は、保護テープ剥離工程の概略を示す断面図である。保護テープ剥離工程では、保護テープ30を剥離する。
図6は、硬化工程の概略を示す断面図である。硬化工程では、熱硬化性接着層12を硬化させる。硬化方法及び硬化条件としては、熱硬化型の接着剤を硬化させる公知の方法を用いることができる。硬化工程では、例えば、80~200℃の温度、0.1~5hの時間でキュアすることにより、熱硬化性接着層12を硬化させることが可能である。これにより、熱硬化性接着層12が大きく収縮し、ウエハ21の反りと逆方向の応力が生じるため、ウエハ21を平坦な状態に維持させることが可能となる。
図7は、粘着テープ貼付工程の概略を示す断面図である。粘着テープ貼付工程では、グラインド処理面に粘着テープ40を貼付する。粘着テープ40は、ダイシングテープ(Dicing Tape)と呼ばれるものであり、ダイシング工程(G)において、ウエハ21を保護、固定し、ピックアップ工程(I)まで保持するためのテープである。
図8は、ダイシング処理工程の概略を示す断面図である。ダイシング処理工程では、粘着テープ40が貼付されたウエハ21をダイシング処理し、個片の半導体チップを得る。ダイシング方法としては、特に限定されず、例えばダイシングソーでウエハ21を切削して切り出すなどの公知の方法を用いることができる。熱硬化性接着シートがウエハの反りを低減させているため、ウエハを平坦化させた状態でダイシングすることができ、チッピングを低減させることができる。
図9は、エキスパンド工程の概略を示す断面図である。エキスパンド工程では、例えば分割された複数個の半導体チップが貼着されている粘着テープ40を放射方向に伸長させ、個々の半導体チップの間隔を広げる。
図10は、ピックアップ工程の概略を示す断面図である。ピックアップ工程では、粘着テープ40上に貼着固定された半導体チップを、粘着テープ40の下面より突き上げて剥離させ、この剥離された半導体チップをコレットで吸着する。ピックアップされた半導体チップは、チップトレイに収納されるか、またはフリップチップボンダーのチップ搭載ノズルへと搬送される。
図11は、実装工程の概略を示す断面図である。実装工程では、例えば半導体チップと回路基板とをNCF(Non Conductive Film)などの回路接続材料を用いて接続する。回路基板としては、特に限定されないが、ポリイミド基板、ガラスエポキシ基板などのプラスチック基板、セラミック基板などを用いることができる。また、接続方法としては、加熱ボンダー、リフロー炉などを用いる公知の方法を用いることができる。
以下、本発明の実施例について説明する。本実施例では、熱硬化性接着シートを作製し、これを反りが発生したパターン付ウエハに貼り合わせ、積層体を作製した。そして、熱硬化性接着シートのフィルム膜性、ダイシング時のチッピング抑制、及びウエハの反りの制御性について評価した。
下記成分を配合し、樹脂組成物を調製した。これを、剥離処理されたPET(Polyethylene terephthalate)にバーコーターを用いて塗布し、80℃のオーブンで3分間乾燥させ、厚み20μmの熱硬化性接着層を有する熱硬化性接着シートを作製した(カバー剥離PET(25μm)/熱硬化性接着層(20μm)/ベース剥離PET(50μm))。
JER1009:ビスフェノールA型エポキシ樹脂(三菱化学(株)、エポキシ当量2850)
JER1031S:テトラフェニロールエタン型エポキシ樹脂(三菱化学(株)、エポキシ当量200)
JERYL980:液状ビスフェノールA型エポキシ 樹脂(三菱化学(株)、エポキシ当量185)
ノバキュアHX-3941HP:アミンアダクト型潜在性硬化剤をイソシアネートで処理したマイクロカプセル型潜在性硬化剤(旭化成イーマテリアルズ(株))
A-187:エポキシ系シランカップリング剤(モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社)
SG-P3:エラストマー(ナガセケムテックス(株)製)
アエロジルR202:シリカ(日本アエロジル(株))
#3050B:カーボンブラック(三菱化学(株))
厚み20μmの熱硬化性接着層をパターン付ウエハ上にプレス機にて貼り合わせ、180℃、1hの条件でキュアして積層体を得た。
熱硬化性接着シートのフィルム性、タック性、及びラミネート性について評価し、全ての評価が良好である場合を「A」と評価し、フィルム性が良好であり、タック性、又はラミネート性のいずれかの評価が不良である場合を「B」と評価し、これら以外の場合を「C」と評価した。
積層体の熱硬化性接着層側にダイシングテープをラミネートし、ダイシング後の積層体を観察した。チッピングによる不良率が5%未満である場合を「A」と評価し、不良率が5%以上である場合を「B」と評価した。
パターン付ウエハの反り量の測定と同様に、積層体の反り量は、平面ステージ(X,Y軸)に積層体を置いたときの反り(Z軸)の最大値とした。積層体の反り量が1.0mm未満のものを「A」、積層体の反り量が1.0mm以上1.5mm未満のものを「B」、積層体の反り量が1.5mm以上2.5mm未満のものを「C」、積層体の反り量が2.5mm以上のものを「D」と評価した。
表1に示すように、固形エポキシ化合物(JER1009)を39質量部、硬化剤(HX-3941HP)を60質量部、カップリング剤(A-187)を1質量部配合した樹脂成分100質量部に、シリカ(アエロジルR202)を80質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.368E-04であり、樹脂成分100質量部に対するフィラーの配合量は80質量部であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はA、ダイシング時のチッピング抑制の評価はB、薄ウエハ反り制御性の評価はBであった。
表1に示すように、固形エポキシ化合物(JER1009)を38質量部、硬化剤(HX-3941HP)を59質量部、カップリング剤(A-187)を1質量部配合した樹脂成分100質量部に、シリカ(アエロジルR202)を80質量部、カーボンブラックを2質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.361E-04であり、樹脂成分100質量部に対するフィラーの配合量は82質量部であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はA、ダイシング時のチッピング抑制の評価はB、薄ウエハ反り制御性の評価はBであった。
表1に示すように、多官能固形エポキシ化合物(JER1031S)を32質量部、硬化剤(HX-3941HP)を67質量部、カップリング剤(A-187)を1質量部配合した樹脂成分100質量部に、シリカ(アエロジルR202)を80質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.600E-03であり、樹脂成分100質量部に対するフィラーの配合量は80質量部であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はA、ダイシング時のチッピング抑制の評価はB、薄ウエハ反り制御性の評価はAであった。
表1に示すように、多官能固形エポキシ化合物(JER1009)を35質量部、多官能液状エポキシ化合物を4質量部、硬化剤(HX-3941HP)を60質量部、カップリング剤(A-187)を1質量部配合した樹脂成分100質量部に、シリカ(アエロジルR202)を80質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は3.390E-04であり、樹脂成分100質量部に対するフィラーの配合量は80質量部であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はB、ダイシング時のチッピング抑制の評価はA、薄ウエハ反り制御性の評価はAであった。
表1に示すように、多官能固形エポキシ化合物(JER1009)を34質量部、硬化剤(HX-3941HP)を55質量部、カップリング剤(A-187)を1質量部配合した樹脂成分90質量部に、シリカ(アエロジルR202)を50質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.326E-04であり、樹脂成分100質量部に対するフィラーの配合量は56質量部であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はA、ダイシング時のチッピング抑制の評価はA、薄ウエハ反り制御性の評価はAであった。
表1に示すように、多官能固形エポキシ化合物(JER1009)を34質量部、硬化剤(HX-3941HP)を55質量部、カップリング剤(A-187)を1質量部、エストラマーを5質量部配合した樹脂成分95質量部に、シリカ(アエロジルR202)を80質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.256E-04であり、樹脂成分100質量部に対するフィラーの配合量は84質量部であった。また、樹脂成分中のエラストマーの含有量は5wt%であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はA、ダイシング時のチッピング抑制の評価はA、薄ウエハ反り制御性の評価はAであった。
表1に示すように、多官能固形エポキシ化合物(JER1009)を34質量部、硬化剤(HX-3941HP)を55質量部、カップリング剤(A-187)を1質量部、エストラマーを10質量部配合した樹脂成分100質量部に、シリカ(アエロジルR202)を80質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.193E-04であり、樹脂成分100質量部に対するフィラーの配合量は80質量部であった。また、樹脂成分中のエラストマーの含有量は10wt%であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はA、ダイシング時のチッピング抑制の評価はA、薄ウエハ反り制御性の評価はBであった。
表1に示すように、多官能固形エポキシ化合物(JER1009)を34質量部、硬化剤(HX-3941HP)を55質量部、カップリング剤(A-187)を1質量部、エストラマーを10質量部配合した樹脂成分100質量部に、シリカ(アエロジルR202)を30質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.193E-04であり、樹脂成分100質量部に対するフィラーの配合量は30質量部であった。また、樹脂成分中のエラストマーの含有量は10wt%であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はB、ダイシング時のチッピング抑制の評価はB、薄ウエハ反り制御性の評価はCであった。
表1に示すように、多官能固形エポキシ化合物(JER1009)を34質量部、硬化剤(HX-3941HP)を55質量部、カップリング剤(A-187)を1質量部、エストラマーを15質量部配合した樹脂成分105質量部に、シリカ(アエロジルR202)を80質量部添加して樹脂組成物を調製した。樹脂成分100質量部当たりのエポキシ基のモル数は1.136E-04であり、樹脂成分100質量部に対するフィラーの配合量は76質量部であった。また、樹脂成分中のエラストマーの含有量は15wt%であった。この樹脂組成物を用いて作製した熱硬化性接着シートのフィルム膜性の評価はA、ダイシング時のチッピング抑制の評価はB、薄ウエハ反り制御性の評価はCであった。
Claims (8)
- エポキシ化合物と、硬化剤とを含む樹脂成分と、フィラーとを含有する樹脂組成物から形成された熱硬化性接着層を有し、
前記エポキシ化合物のエポキシ当量の逆数に、前記樹脂成分中のエポキシ化合物の含有率を乗じた値の総和が、1.15E-04以上であり、
前記フィラーの配合量が、樹脂成分100質量部に対して50質量部以上である熱硬化性接着シート。 - 前記樹脂成分が、ポリマーをさらに含み、
前記樹脂成分中のポリマーの含有率が、15wt%未満である請求項1記載の熱硬化性接着シート。 - 前記樹脂成分が、ポリマーをさらに含み、
前記樹脂成分中のポリマーの含有率が、10wt%未満である請求項1記載の熱硬化性接着シート。 - 前記フィラーの配合量が、樹脂成分100質量部に対して50質量部以上100質量部以下である請求項1乃至3のいずれか1項に記載の熱硬化性接着シート。
- 前記フィラーが、黒色顔料を含む請求項1乃至3のいずれか1項に記載の熱硬化性接着シート。
- 前記フィラーが、黒色顔料を含む請求項4記載の熱硬化性接着シート。
- 半導体ウエハを研磨するグラインド工程と、
前記半導体ウエハの研磨面に熱硬化性接着シートを貼付する熱硬化性接着シート貼付工程と、
前記熱硬化性シートを硬化させ、前記半導体ウエハの反り量を低減させる硬化工程と、
前記半導体ウエハの熱硬化性接着シート面にダイシングテープを貼付するダイシングテープ貼付工程と、
ダイシングテープが貼付されたウエハをダイシング処理し、個片の半導体チップを得るダイシング処理工程とを有し、
前記熱硬化性接着シートが、エポキシ化合物と、硬化剤とを含む樹脂成分と、フィラーとを含有する樹脂組成物から形成された熱硬化性接着層を有し、
前記エポキシ化合物のエポキシ当量の逆数に、前記樹脂成分中のエポキシ化合物の含有率を乗じた値の総和が、1.15E-04以上であり、
前記フィラーの配合量が、樹脂成分100質量部に対して50質量部以上である半導体装置の製造方法。 - 前記グラインド工程では、厚みが200μm以下となるまで研磨する請求項7記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201680070228.5A CN108291115B (zh) | 2015-12-14 | 2016-12-13 | 热固化性粘接片及半导体装置的制造方法 |
US15/768,050 US11624011B2 (en) | 2015-12-14 | 2016-12-13 | Thermosetting adhesive sheet and semiconductor device manufacturing method |
KR1020187014970A KR102042195B1 (ko) | 2015-12-14 | 2016-12-13 | 열경화성 접착 시트, 및 반도체 장치의 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-243649 | 2015-12-14 | ||
JP2015243649A JP6721325B2 (ja) | 2015-12-14 | 2015-12-14 | 熱硬化性接着シート、及び半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017104670A1 true WO2017104670A1 (ja) | 2017-06-22 |
Family
ID=59056834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/087090 WO2017104670A1 (ja) | 2015-12-14 | 2016-12-13 | 熱硬化性接着シート、及び半導体装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11624011B2 (ja) |
JP (1) | JP6721325B2 (ja) |
KR (1) | KR102042195B1 (ja) |
CN (1) | CN108291115B (ja) |
TW (1) | TWI713650B (ja) |
WO (1) | WO2017104670A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019087604A (ja) * | 2017-11-06 | 2019-06-06 | 株式会社東京精密 | ウェーハの加工方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202018105611U1 (de) * | 2018-09-28 | 2018-10-15 | Certoplast Technische Klebebänder Gmbh | Technisches Klebeband insbesondere Kabelwickelband |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013181049A (ja) * | 2012-02-29 | 2013-09-12 | Hitachi Chemical Co Ltd | フィルム状接着剤、接着シート及び半導体装置 |
WO2013161864A1 (ja) * | 2012-04-26 | 2013-10-31 | 新日鉄住金化学株式会社 | フィルム状接着剤用組成物及びその製造方法、フィルム状接着剤、並びに、フィルム状接着剤を用いた半導体パッケージ及びその製造方法 |
JP2014197675A (ja) * | 2013-03-07 | 2014-10-16 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
JP2015032644A (ja) * | 2013-07-31 | 2015-02-16 | リンテック株式会社 | 保護膜形成フィルム、保護膜形成用シートおよび検査方法 |
WO2015046529A1 (ja) * | 2013-09-30 | 2015-04-02 | リンテック株式会社 | 樹脂膜形成用複合シート |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0823002B2 (ja) * | 1985-12-27 | 1996-03-06 | 松下電器産業株式会社 | 熱硬化性接着剤 |
JP3544362B2 (ja) | 2001-03-21 | 2004-07-21 | リンテック株式会社 | 半導体チップの製造方法 |
JP4027332B2 (ja) * | 2004-03-19 | 2007-12-26 | リンテック株式会社 | 半導体用粘接着シートおよび半導体装置の製造方法 |
EP2145906B1 (en) * | 2006-10-20 | 2018-04-11 | Air Water Inc. | Pellet-type molecular sieve carbon |
JP2008247936A (ja) * | 2007-03-29 | 2008-10-16 | Lintec Corp | 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法 |
EP2452964A4 (en) * | 2009-07-10 | 2014-06-11 | Toray Industries | LAYER COMPOSITION, ADHESIVE, PCB AND SEMICONDUCTOR DEVICE THEREFORE MADE AND MANUFACTURING METHOD THEREFOR |
JP5728804B2 (ja) * | 2009-10-07 | 2015-06-03 | デクセリアルズ株式会社 | 熱硬化性接着組成物、熱硬化性接着シート、その製造方法及び補強フレキシブルプリント配線板 |
JP5356326B2 (ja) * | 2010-07-20 | 2013-12-04 | 日東電工株式会社 | 半導体装置の製造方法 |
JP5820108B2 (ja) * | 2010-11-29 | 2015-11-24 | デクセリアルズ株式会社 | 熱硬化性接着シート及び熱硬化性接着シートの製造方法 |
JP5770995B2 (ja) * | 2010-12-01 | 2015-08-26 | デクセリアルズ株式会社 | 熱硬化性樹脂組成物、熱硬化性接着シート及び熱硬化性接着シートの製造方法 |
JP5820170B2 (ja) * | 2011-07-13 | 2015-11-24 | 日東電工株式会社 | 半導体装置用の接着フィルム、フリップチップ型半導体裏面用フィルム、及び、ダイシングテープ一体型半導体裏面用フィルム |
CN108155142B (zh) * | 2011-09-30 | 2022-05-03 | 琳得科株式会社 | 具有保护膜形成层的切割膜片和芯片的制造方法 |
US9443750B2 (en) | 2011-12-26 | 2016-09-13 | Lintec Corporation | Dicing sheet with protective film-forming layer, and method for producing chip |
JP6001273B2 (ja) | 2012-02-13 | 2016-10-05 | 信越化学工業株式会社 | 半導体ウエハ用保護フィルム及び半導体チップの製造方法 |
JP5842736B2 (ja) * | 2012-06-06 | 2016-01-13 | デクセリアルズ株式会社 | 熱硬化性樹脂組成物、熱硬化性接着シート及び熱硬化性接着シートの製造方法 |
JP6003763B2 (ja) * | 2012-10-30 | 2016-10-05 | デクセリアルズ株式会社 | 熱硬化性樹脂組成物、光反射性異方性導電接着剤及び発光装置 |
CN105579544B (zh) * | 2013-09-27 | 2018-02-16 | 琳得科株式会社 | 加热固化型磁化性粘接剂组合物及粘接片 |
CN105683323A (zh) | 2014-03-04 | 2016-06-15 | 积水化学工业株式会社 | 电子部件安装用粘接剂和倒装片安装用粘接膜 |
KR102221484B1 (ko) * | 2014-03-24 | 2021-02-26 | 린텍 가부시키가이샤 | 보호막 형성 필름, 보호막 형성용 시트 및 가공물의 제조 방법 |
JP6068386B2 (ja) * | 2014-03-31 | 2017-01-25 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法 |
-
2015
- 2015-12-14 JP JP2015243649A patent/JP6721325B2/ja active Active
-
2016
- 2016-12-13 US US15/768,050 patent/US11624011B2/en active Active
- 2016-12-13 CN CN201680070228.5A patent/CN108291115B/zh active Active
- 2016-12-13 TW TW105141139A patent/TWI713650B/zh active
- 2016-12-13 KR KR1020187014970A patent/KR102042195B1/ko active IP Right Grant
- 2016-12-13 WO PCT/JP2016/087090 patent/WO2017104670A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013181049A (ja) * | 2012-02-29 | 2013-09-12 | Hitachi Chemical Co Ltd | フィルム状接着剤、接着シート及び半導体装置 |
WO2013161864A1 (ja) * | 2012-04-26 | 2013-10-31 | 新日鉄住金化学株式会社 | フィルム状接着剤用組成物及びその製造方法、フィルム状接着剤、並びに、フィルム状接着剤を用いた半導体パッケージ及びその製造方法 |
JP2014197675A (ja) * | 2013-03-07 | 2014-10-16 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
JP2015032644A (ja) * | 2013-07-31 | 2015-02-16 | リンテック株式会社 | 保護膜形成フィルム、保護膜形成用シートおよび検査方法 |
WO2015046529A1 (ja) * | 2013-09-30 | 2015-04-02 | リンテック株式会社 | 樹脂膜形成用複合シート |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019087604A (ja) * | 2017-11-06 | 2019-06-06 | 株式会社東京精密 | ウェーハの加工方法 |
US11075071B2 (en) | 2017-11-06 | 2021-07-27 | Tokyo Seimitsu Co., Ltd. | Method for processing wafer |
JP7157301B2 (ja) | 2017-11-06 | 2022-10-20 | 株式会社東京精密 | ウェーハの加工方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108291115A (zh) | 2018-07-17 |
US11624011B2 (en) | 2023-04-11 |
JP6721325B2 (ja) | 2020-07-15 |
KR20180075619A (ko) | 2018-07-04 |
KR102042195B1 (ko) | 2019-11-07 |
TWI713650B (zh) | 2020-12-21 |
CN108291115B (zh) | 2021-04-27 |
JP2017110054A (ja) | 2017-06-22 |
TW201735147A (zh) | 2017-10-01 |
US20180320031A1 (en) | 2018-11-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6347657B2 (ja) | 保護テープ、及びこれを用いた半導体装置の製造方法 | |
JP4872587B2 (ja) | 封止フィルム、及びこれを用いた半導体装置 | |
TWI446431B (zh) | 覆晶型半導體背面用膜及半導體背面用切晶帶一體膜 | |
TWI747845B (zh) | 保護帶及半導體裝置之製造方法 | |
JP2013004872A (ja) | 半導体装置の製造方法、フィルム状接着剤及び接着剤シート | |
JP2011228637A (ja) | チップ保護用フィルム | |
WO2016158959A1 (ja) | 熱硬化性接着シート、及び半導体装置の製造方法 | |
KR102031529B1 (ko) | 보호 테이프, 및 이것을 사용한 반도체 장치의 제조 방법 | |
JP4661889B2 (ja) | ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法 | |
WO2017104670A1 (ja) | 熱硬化性接着シート、及び半導体装置の製造方法 | |
TWI718112B (zh) | 保護膜形成用薄膜 | |
JP4897979B2 (ja) | チップ保護用フィルム | |
JP2018098228A (ja) | 保護テープ、及びこれを用いた半導体装置の製造方法 | |
JP5392017B2 (ja) | 接着剤組成物、接着用シート、ダイシング・ダイアタッチフィルム及び半導体装置 | |
WO2021079955A1 (ja) | 保護膜形成用フィルム、保護膜形成用複合シートおよび保護膜付き小片の製造方法 | |
JP6821392B2 (ja) | 保護テープ、及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16875647 Country of ref document: EP Kind code of ref document: A1 |
|
DPE2 | Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 15768050 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20187014970 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16875647 Country of ref document: EP Kind code of ref document: A1 |