TWI446431B - 覆晶型半導體背面用膜及半導體背面用切晶帶一體膜 - Google Patents
覆晶型半導體背面用膜及半導體背面用切晶帶一體膜 Download PDFInfo
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- TWI446431B TWI446431B TW100123167A TW100123167A TWI446431B TW I446431 B TWI446431 B TW I446431B TW 100123167 A TW100123167 A TW 100123167A TW 100123167 A TW100123167 A TW 100123167A TW I446431 B TWI446431 B TW I446431B
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- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
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- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Description
本發明係關於覆晶型半導體背面用膜、及半導體背面用切晶帶一體膜。該覆晶型半導體背面用膜用於保護半導體元件(例如半導體晶片)之背面並增強其強度。
最近,已日益要求半導體裝置及其封裝之薄化及小型化。因此,作為半導體裝置及其封裝,已廣泛利用其中半導體元件(例如半導體晶片)藉助覆晶結合安裝(覆晶連接)於基板上之覆晶型半導體裝置。在此覆晶連接中,將半導體晶片以其中該半導體晶片之電路面與基板之電極形成面相對之形式固定至該基板。於此一半導體裝置或類似裝置中,可存在半導體晶片之背面由保護膜保護以防止半導體晶片損壞或諸如此類之情形(參見,專利文獻1至10)。
專利文獻1:JP-A-2008-166451
專利文獻2:JP-A-2008-006386
專利文獻3:JP-A-2007-261035
專利文獻4:JP-A-2007-250970
專利文獻5:JP-A-2007-158026
專利文獻6:JP-A-2004-221169
專利文獻7:JP-A-2004-214288
專利文獻8:JP-A-2004-142430
專利文獻9:JP-A-2004-072108
專利文獻10:JP-A-2004-063551
然而,用保護膜保護半導體晶片之背面需要將保護膜附著至切割步驟中獲得之半導體晶片之背面的另一步驟。因此,處理步驟之數量增加且由此增加生產成本。最近半導體裝置變薄之趨勢經常導致在拾取半導體晶片之步驟中對其造成損害的問題。因此,直至拾取步驟,需要加強半導體晶圓及半導體晶片以達成增強其機械強度之目的。
迄今,在一些情形下,拾取之半導體晶片並不直接安裝於黏附體上,而是一度使用儲存用部件儲存。作為儲存用部件,可使用包含基板之結構,該基板具有電子部分外殼凹槽(例如孔)及用於覆蓋電子部分外殼凹槽之普通蓋帶。
然而,在藉由使用儲存用部件儲存附著有上述半導體晶片背面用保護膜之半導體晶片的情形下,半導體晶片背面用保護膜及儲存用部件可經常黏結在一起(彼此黏合)以便不可自儲存用部件取出其上附著有半導體晶片背面用保護膜之半導體晶片。
已鑒於上文問題製作本發明且其目的係提供覆晶型半導體背面用膜,其可保護半導體元件並利用其可容易地自儲存用部件取出半導體元件,且其目的係提供半導體背面用切晶帶一體膜。
本發明者為達成解決上述問題之目的而堅持不懈地研究,且因此發現在半導體背面用膜形成於半導體元件之背面上時及當固化之前在不面向半導體元件之背面側上的膜表面的表面粗糙度(Ra)控制在預定範圍內時,則該膜幾乎不黏結(黏合)至儲存用部件,且本發明者已完成本發明。
亦即,本發明提供一種欲在覆晶連接至黏附體之半導體元件的背面上形成之覆晶型半導體背面用膜,其中該膜在固化之前,在該膜於該半導體元件之背面上形成時不面向該半導體元件之背面之一個表面上具有50 nm至3 μm範圍內之表面粗糙度(Ra)。
本發明之覆晶型半導體背面用膜在其形成於半導體元件之背面上時發揮保護覆晶連接至黏附體上之半導體元件的功能。根據本發明之覆晶型半導體背面用膜,該膜在固化之前,在該膜於半導體元件之背面上形成時,不面向半導體元件之背面的一個表面的表面粗糙度(Ra)在50 nm至3 μm範圍內。因此,在附著有覆晶型半導體背面用膜之半導體元件儲存於儲存用部件中時,在其儲存期間防止形成於半導體元件之背面上的覆晶型半導體背面用膜黏結或黏合至儲存用部件,且在自儲存用部件取出半導體元件時,可容易地將其取出。本文中半導體元件之背面意指與形成電路之其表面相對之表面。
較佳地,覆晶型半導體背面用膜之厚度在2 μm至200 μm範圍內。若厚度係至少2 μm,則可增強膜之機械強度且該膜可確保良好自身可持續性。另一方面,在厚度係至多200 μm時,可薄化包含覆晶安裝於黏附體上之半導體元件的半導體裝置。
半導體元件之厚度較佳在20 μm至300 μm範圍內。
本發明亦提供半導體背面用切晶帶一體膜,其包含:切晶帶及上述覆晶型半導體背面用膜,該膜層壓於該切晶帶上,其中該切晶帶包含基礎材料及層壓於該基礎材料上之壓敏黏合層,且該覆晶型半導體背面用膜層壓於壓敏黏合層上。
根據具有上述構造之半導體背面用切晶帶一體膜,切晶帶及覆晶型半導體背面用膜一體化,且因此可在切割半導體晶圓以製造半導體元件之切割步驟及後續拾取步驟中使用此類型之切晶帶一體膜。亦即,在切割步驟之前切晶帶附著至半導體晶圓之背面時,半導體背面用膜亦可同時附著至其上,且因此,不需僅將半導體背面用膜附著至半導體晶圓之步驟(半導體背面膜附著步驟)。因此,可減少處理步驟數。此外,由於半導體背面用膜保護半導體晶圓之背面及藉由切割形成之半導體元件的背面,故可防止或減少切割步驟及後續步驟(拾取步驟)期間之半導體元件之損害。因此,可增大欲製造覆晶型半導體裝置之產率。
本發明之覆晶型半導體背面用膜在其形成於半導體元件之背面上時發揮保護覆晶連接至黏附體上之半導體元件的功能。本發明之覆晶型半導體背面用膜在固化之前,在該膜於半導體晶圓之背面上形成時,不面向半導體元件之背面的一個表面的表面粗糙度(Ra)在50 nm至3 μm範圍內。因此,在附著有覆晶型半導體背面用膜之半導體元件儲存於儲存用部件中時,在其儲存期間防止形成於半導體元件之背面上的覆晶型半導體背面用膜黏結或黏合至儲存用部件,且在自儲存用部件取出半導體元件時,可容易地將其取出。
根據本發明之半導體背面用切晶帶一體膜,切晶帶及覆晶型半導體背面用膜一體化,且因此可在切割半導體晶圓以製造半導體元件之切割步驟及後續拾取步驟期間使用此類型之切晶帶一體膜。因此,不需僅將半導體背面用膜附著至半導體晶圓之步驟(半導體背面膜附著步驟),此外,在後續切割步驟及拾取步驟中,由於半導體晶圓用膜附著至半導體晶圓之背面及藉由切割形成之半導體元件的背面,故由此可有效地保護半導體晶圓及半導體元件且可防止半導體元件受損。
參照圖1闡述本發明之實施例,但本發明並不限於該等實施例。圖1係顯示本發明實施例之半導體背面用切晶帶一體膜的一個實施例之剖面示意圖。附帶而言,於本說明書之圖式中,未給出對說明無關緊要之部分,且存在藉由放大、縮小等來顯示以使說明變得容易之部分。
如圖1中所示,半導體背面用切晶帶一體膜1(在下文中有時亦稱作「切晶帶一體型半導體背面保護膜」、「具有切晶帶之半導體背面用膜」或「具有切晶帶之半導體背面保護膜」)具有包括以下之組態:切晶帶3,其包括形成於基礎材料31上之壓敏黏合層32;及形成於壓敏黏合層32上之覆晶型半導體背面用膜2(在下文中有時稱作「半導體背面用膜」或「半導體背面保護膜」)。亦如圖1中所示,本發明之半導體背面用切晶帶一體膜可經設計以使僅在對應於半導體晶圓附著部分之部分33上形成半導體背面用膜2;然而,可在壓敏黏合層32之整個表面上形成半導體背面用膜,或可在比對應於半導體晶圓附著部分之部分33大但比壓敏黏合層32之整個表面小之部分上形成半導體背面用膜。附帶而言,可利用間隔器或諸如此類保護半導體背面用膜2之表面(附著至晶圓之背面的表面)直至該膜附著至晶圓背面。
半導體背面之膜2具有膜形狀。在半導體背面用切晶帶一體膜作為產品之實施例中,半導體背面用膜2通常呈未固化狀態(包括半固化狀態),且在半導體背面用切晶帶一體膜附著至半導體晶圓後經熱固化(下文闡述詳情)。
根據此實施例之半導體背面用膜2,該膜在固化之前,在該膜於半導體元件之背面上形成時,不面向(接觸)半導體元件之背面的一個表面上的表面粗糙度(Ra)在50 nm至3 μm範圍內。較佳地,表面粗糙度(Ra)係60 nm至2 μm、更佳70 nm至1 μm。由於表面粗糙度(Ra)係50 nm至3 μm,故在附著有半導體背面用膜2之半導體元件儲存於儲存用部件中時,在其儲存期間防止形成於半導體元件之背面上的半導體背面用膜2黏結或黏合至儲存用部件,且在自儲存用部件取出半導體元件時,可容易地將其取出。
儲存用部件可為任一已知者,其包含具有電子部分外殼凹槽(例如孔)及用於覆蓋電子部分外殼凹槽之普通蓋帶的基礎材料。
較佳地,半導體背面用膜2與儲存用部件之黏合力(23℃,剝離角180°,剝離速度300 m/sec)係至多0.1 N/10 mm、更佳至多0.01 N/10 mm。若黏合力係至多0.1 N/10 mm,則更易於自儲存用部件中取出半導體元件。
半導體背面用膜可由樹脂組合物(例如含有熱塑性樹脂及熱固性樹脂之樹脂組合物)形成。半導體背面用膜可由不含熱固性樹脂之熱塑性樹脂組合物或不含熱塑性樹脂之熱固性樹脂形成。
該熱塑性樹脂之實例包括天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、聚醯胺樹脂(例如6-耐綸(6-nylon)及6,6-耐綸)、苯氧基樹脂、丙烯酸系樹脂、飽和聚酯樹脂(例如PET(聚對苯二甲酸乙二酯)或PBT(聚對苯二甲酸丁二酯))、聚醯胺醯亞胺樹脂或氟樹脂。該熱塑性樹脂可單獨地或以兩個或更多個種類之組合形式採用。在該等熱塑性樹脂中,丙烯酸系樹脂及苯氧基樹脂較佳,且苯氧基樹脂更佳,此乃因其能夠形成膜形狀同時維持高抗張儲存彈性模數。
苯氧基樹脂並無具體界定,其包括(例如)具有作為構成單元納入其中之酚組份的環氧樹脂,例如,經由環氧氯丙烷與二元酚化合物(二價酚化合物)反應獲得之樹脂、及經由二價環氧化合物與二元酚化合物反應獲得之樹脂。苯氧基樹脂之實例包括彼等具有至少一個骨架者,該骨架選自雙酚骨架(例如雙酚A型骨架、雙酚F型骨架、雙酚A/F混合型骨架、雙酚S型骨架、雙酚M型骨架、雙酚P型骨架、雙酚A/P混合型骨架、雙酚Z型骨架)、萘骨架、降冰片烯骨架、茀骨架、聯苯骨架、蒽骨架、酚醛骨架、芘骨架、呫噸骨架、金剛烷骨架及二環戊二烯骨架。作為苯氧基樹脂,本文中有用者係市售產品。此處可單獨或組合使用一或多種不同類型之苯氧基樹脂。
該等丙烯酸系樹脂不受特別限制,且其實例包括含有一種或兩種或更多種具有直鏈或具支鏈烷基之丙烯酸或甲基丙烯之酯作為組份的聚合物,該直鏈或具支鏈烷基具有30個或更少個碳原子、較佳4至18個碳原子、更佳6至10個碳原子且尤其8或9個碳原子。亦即,在本發明中,丙烯酸系樹脂具有亦包括甲基丙烯酸系樹脂在內的寬泛含義。烷基之實例包括甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、2-乙基已基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基及十八烷基。
此外,用於形成該等丙烯酸系樹脂之其他單體(除其中烷基係具有30個或更少碳原子者之丙烯酸或甲基丙烯酸烷基酯以外的單體)不受特別限制,且其實例包括:含羧基之單體,例如丙烯酸、甲基丙烯酸、丙烯酸羧乙基酯、丙烯酸羧戊基酯、衣康酸(itaconic acid)、馬來酸、富馬酸及巴豆酸;酸酐單體,例如馬來酸酐及衣康酸酐;含羥基之單體,例如(甲基)丙烯酸2-羥乙基酯、(甲基)丙烯酸2-羥丙基酯、(甲基)丙烯酸4-羥丁基酯、(甲基)丙烯酸6-羥己基酯、(甲基)丙烯酸8-羥辛基酯、(甲基)丙烯酸10-羥癸基酯、(甲基)丙烯酸12-羥基月桂基酯及甲基丙烯酸(4-羥甲基環己基)酯;含磺酸基團之單體,例如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺基-2-甲基丙磺酸、(甲基)丙烯醯胺基丙磺酸、(甲基)丙烯酸磺基丙基酯及(甲基)丙烯醯氧基萘磺酸;及含磷酸基團之單體,例如磷酸2-羥乙基丙烯醯基酯。就此而言,(甲基)丙烯酸意指丙烯酸及/或甲基丙烯酸,(甲基)丙烯酸酯意指丙烯酸酯及/或甲基丙烯酸酯,(甲基)丙烯醯基意指丙烯醯基及/或甲基丙烯醯基等,其在整個說明書中皆應適用。
此外,該熱固性樹脂之實例除環氧樹脂及酚系樹脂以外,亦包括胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂及熱固性聚醯亞胺樹脂。該熱固性樹脂可單獨地或以兩個或更多個種類之組合形式採用。作為熱固性樹脂,僅含有少量侵蝕半導體元件之離子雜質之環氧樹脂係適宜的。此外,該酚系樹脂適宜用作該等環氧樹脂之固化劑。
該環氧樹脂不受特別限制且,例如可使用雙官能環氧樹脂或多官能環氧樹脂(例如雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚AF型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、茀型環氧樹脂、苯酚酚醛型環氧樹脂、鄰甲酚酚醛型環氧樹脂、叁羥苯基甲烷型環氧樹脂及四羥苯基乙烷烷型環氧樹脂),或環氧樹脂(例如乙內醯脲型環氧樹脂、三縮水甘油基異氰尿酸酯型環氧樹脂或縮水甘油基胺型環氧樹脂)。
作為該環氧樹脂,在上文所例示之彼等環氧樹脂之中,酚醛型環氧樹脂、聯苯型環氧樹脂、叁羥苯基甲烷型環氧樹脂及四羥苯基乙烷型環氧樹脂較佳。此乃因此等環氧樹脂與作為固化劑之酚系樹脂具有高反應性且在耐熱性等方面係優異的。
此外,上述酚系樹脂充當該環氧樹脂之固化劑,且其實例包括:酚醛型酚系樹脂,例如苯酚酚醛樹脂、苯酚芳烷基樹脂、甲酚酚醛樹脂、第三丁基苯酚酚醛樹脂及壬基苯酚酚醛樹脂;甲階型酚系樹脂;及聚羥基苯乙烯(polyoxystyrene),例如聚-對-羥基苯乙烯。該酚系樹脂可單獨地或以兩個或更多個種類之組合形式採用。在該等酚系樹脂之中,苯酚酚醛樹脂及苯酚芳烷基樹脂係尤佳的。此乃因可改良半導體裝置之連接可靠性。
在本發明中,可使用環氧樹脂及酚系樹脂之熱固化加速觸媒。該熱固化加速觸媒可適宜地選自已知熱固化加速觸媒。此處可單獨或組合使用一或多種熱固化加速觸媒。作為熱固化加速觸媒,例如,可使用基於胺之固化加速觸媒、基於磷之固化加速觸媒、基於咪唑之固化加速觸媒、基於硼之固化加速觸媒或基於磷-硼之固化加速觸媒。
基於胺之固化加速劑並無具體界定,其包括(例如)單乙醇胺三氟硼酸酯(由Stella Chemifa有限公司製造)、二氰基二醯胺(由Nacalai Tesque有限公司製造)。
基於磷之固化加速劑並無具體界定,且包括(例如)三有機膦,例如三苯基膦、三丁基膦、三(對甲基苯基)膦、三(壬基苯基)膦、二苯基甲苯基膦;以及四苯基溴化鏻(商品名TPP-PB)、甲基三苯基鏻(商品名TPP-MB)、甲基三苯基氯化鏻(商品名TPP-MC)、甲氧基甲基三苯基鏻(商品名TPP-MOC)、苄基三苯基氯化鏻(商品名TPP-ZC)(所有均由Hokko Chemical Industry有限公司製造)。較佳地,三苯基膦化合物實質上不溶於環氧樹脂中。若不溶於環氧樹脂中,則其可防止過度熱固化。具有三苯基膦結構且實質上不溶於環氧樹脂中之熱固化觸媒係(例如)甲基三苯基鏻(商品名TPP-MB)。本文中術語「不溶」意指包含三苯基膦化合物之熱固化觸媒不溶於包含環氧樹脂之溶劑中,更精確而言,觸媒在10℃至40℃範圍內之溫度下不以10重量%或更大之量溶於溶劑中。
基於咪唑之固化加速劑包括2-甲基咪唑(商品名2MZ),2-十一烷基咪唑(商品名C11-Z)、2-十七烷基咪唑(商品名C17Z)、1,2-二甲基咪唑(商品名1,2DMZ)、2-乙基-4-甲基咪唑(商品名2E4MZ)、2-苯基咪唑(商品名2PZ)、2-苯基-4-甲基咪唑(商品名2P4MZ)、1-苄基-2-甲基咪唑(商品名1B2MZ)、1-苄基-2-苯基咪唑(商品名1B2PZ)、1-氰基乙基-2-甲基咪唑(商品名2MZ-CN)、1-氰基乙基-2-十一烷基咪唑(商品名C11Z-CN)、偏苯三酸1-氰基乙基-2-苯基咪唑鎓(商品名2PZCNS-PW)、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪(商品名2MZ-A)、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基-均三嗪(商品名C11Z-A)、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三嗪(商品名2E4MZ-A)、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異氰尿酸加成物(商品名2MA-OK)、2-苯基-4,5-二羥基甲基咪唑(商品名2PHZ-PW)、2-苯基-4-甲基-5-羥基甲基咪唑(商品名2P4MHZ-PW)(所有均由Shikoku Chemical Industry有限公司製造)。
基於硼之固化加速劑並無具體界定,其包括(例如)三氯硼烷。
基於磷/硼之固化加速劑並無具體界定,其包括(例如)四苯基硼酸酯四苯基鏻(商品名TPP-K)、四-對三硼酸酯四苯基鏻(商品名TPP-MK)、四苯基硼酸酯苄基三苯基鏻(商品名TPP-ZK)、三苯基膦三苯基硼烷(商品名TPP-S)(所有均由Hokko Chemical Industry有限公司製造)。
較佳地,熱固化加速觸媒相對於熱固性樹脂之總量的比例係1.5重量%至20重量%。在一些情形下,熱固化加速觸媒之比例可小於1.5重量%。在該情形下,熱固化加速觸媒之比例的下限較佳係至少0.01重量%(更佳至少0.1重量%)。該比例之上限較佳係至多10重量%(更佳至多5重量%)。
較佳地,半導體背面用膜自其耐熱性觀點而言係由含有丙烯酸系樹脂、苯氧基樹脂及酚系樹脂之樹脂組合物形成。
重要的是,半導體背面用膜2具有黏合性。具體而言,重要的是,半導體背面用膜2本身係黏合層。用作黏合層之半導體背面用膜2可由(例如)其中含有作為熱固性樹脂之酚系樹脂的樹脂組合物形成。較佳地,在製備半導體背面用膜2之樹脂組合物時,於其中添加能夠與聚合物之分子鏈末端處之官能團反應之多功能化合物作為交聯劑,以在一定程度上預先固化膜2。隨即,於高溫下膜2之黏合性質可得以改良且其耐熱性可增強。
半導體背面用膜與半導體晶圓之黏合力(23℃,剝離角為180°,剝離速率為300 mm/min)較佳係至少1 N/10 mm寬(例如1 N/10 mm寬至10 N/10 mm寬)、更佳至少2 N/10 mm寬(例如2 N/10 mm寬至10 N/10 mm寬)、甚至更佳至少4 N/10 mm寬(例如4 N/10 mm寬至10 N/10 mm寬)。使黏合力在該範圍內,膜可以優良黏合性黏合至半導體晶圓及半導體元件且無膜溶脹或類似黏合破壞。另外,在切割半導體晶圓時,可防止晶片脫離。舉例而言,如下量測半導體背面用膜與半導體晶圓之黏合力:用黏合帶(商品名BT315,由Nitto Denko有限公司製造)加強半導體背面用膜之一個表面,該黏合帶附著於該膜上。隨後,藉由於50℃下根據乾式層壓法用在其上來回移動之2 kg輥碾壓將厚度為0.6 mm之半導體晶圓黏結至長度為150 mm且寬度為10 mm之半導體晶圓用背面增強之膜的表面。此後,將其於熱板(50℃)上保持2分鐘,且隨後於室溫(23℃左右)下保持20分鐘。在由此靜置後,使用剝離測試器(商品名「Autograph AGS-J」,由Shimadzu Seisaku-sho有限公司製造)於23℃之溫度下以180°之剝離角及以300 mm/min之牽拉速率剝離背面增強之半導體背面用膜。黏合力係在自半導體晶圓剝離半導體背面用膜時二者介面之間由此量測得之值(N/10 mm寬)。
交聯劑不受特別限制且可使用已知交聯劑。具體而言,例如,不僅可提及基於異氰酸酯之交聯劑、基於環氧之交聯劑、基於三聚氰胺之交聯劑及基於過氧化物之交聯劑,而且可提及基於尿素之交聯劑、基於金屬醇鹽之交聯劑、基於金屬螯合物之交聯劑、基於金屬鹽之交聯劑、基於碳二亞胺之交聯劑、基於噁唑啉之交聯劑、基於氮丙啶之交聯劑、基於胺之交聯劑及諸如此類。作為交聯劑,基於異氰酸酯之交聯劑或基於環氧之交聯劑係適合的。交聯劑可單獨地或以兩個或更多個種類之組合形式採用。
基於異氰酸酯之交聯劑之實例包括低碳數脂肪族多異氰酸酯,例如1,2-伸乙基二異氰酸酯、1,4-伸丁基二異氰酸酯、及1,6-六亞甲基二異氰酸酯;脂環族多異氰酸酯,例如伸環戊基二異氰酸酯、伸環己基二異氰酸酯、異佛爾酮二異氰酸酯、氫化伸甲苯基二異氰酸酯及氫化伸二甲苯基二異氰酸酯;及芳香族多異氰酸酯,例如2,4-伸甲苯基二異氰酸酯、2,6-伸甲苯基二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯及伸二甲苯基二異氰酸酯。另外,亦可使用三羥甲基丙烷/伸甲苯基二異氰酸酯三聚體加合物[商品名「COLONATE L」,由Nippon Polyurethane Industry有限公司製造]、三羥甲基丙烷/六亞甲基二異氰酸酯三聚體加合物[商品名「COLONATE HL」,由Nippon Polyurethane Industry有限公司製造]、及諸如此類。此外,基於環氧之交聯劑之實例包括N,N,N',N'-四縮水甘油基間伸二甲苯基二胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨糖醇聚縮水甘油醚、甘油聚縮水甘油醚、異戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、山梨醇酐聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、異氰尿酸三縮水甘油基-叁(2-羥乙基)酯、間苯二酚二縮水甘油醚、及雙酚-S-二縮水甘油醚,亦及其分子中具有兩個或更多個環氧基團之基於環氧之樹脂。
欲使用之交聯劑之量不受特別限制且可根據該交聯度適當地選擇。具體而言,較佳地,欲使用之交聯劑之量以100重量份數聚合物組份(特定而言,在分子鏈末端處具有官能團之聚合物)計通常為7重量份數或更低(例如,0.05重量份數至7重量份數)。當交聯劑之量以100重量份數聚合物組份計大於7重量份數時,黏合力降低,使得該情形不佳。自改良內聚力之觀點而言,交聯劑之量以100重量份數聚合物組份計較佳為0.05重量份數或更高。
在本發明中,代替使用交聯劑或連同使用交聯劑,亦可藉由用電子束、紫外線或諸如此類輻照來實施交聯處理。
半導體背面用膜較佳係有色的。藉此,可呈現優良雷射標記性質及優良外觀性質,且製備具有增值外觀性質之半導體裝置成為可能。如上所述,由於半導體背面用有色膜具有優良標記性質,因此可實施標記以藉助半導體背面之膜,藉由利用諸如印刷方法及雷射標記方法等各種標記方法中之任一者,使用半導體元件來賦予該半導體元件或半導體裝置之非電路側上之面各種資訊,例如文字資訊及圖形資訊。特定而言,藉由控制著色之色彩而使得以優良可見度觀察藉由標記所賦予之資訊(例如,文字資訊及圖形資訊)成為可能。此外,當半導體背面用膜係有色時,可容易地將切晶帶與半導體背面用膜彼此區別開,使得可增強可加工性及諸如此類。此外,舉例而言,作為半導體裝置,可藉由使用不同色彩來將其產品進行分類。在半導體背面用膜係有色之情形下(在該膜既非無色亦非透明之情形下),藉由著色顯示之色彩不受特別限制,但(例如)較佳為深色,例如黑色、藍色或紅色,且黑色尤其適宜。
在本發明實施例中,深色基本上意指具有60或更小(0至60)、較佳50或更小(0至50)、且更佳40或更小(0至40)之L*(界定於L*a*b*色彩空間中)之深色。
此外,黑色基本上意指具有35或更小(0至35)、較佳30或更小(0至30)、且更佳25或更小(0至25)之L*(界定於L*a*b*色彩空間中)之基於黑色的色彩。就此而言,於黑色中,界定於L*a*b*色彩空間中之a*及b*中之每一者各可根據L*之值適宜地選擇。舉例而言,a*及b*兩者皆處於較佳-10至10、更佳-5至5、且更佳-3至3(特定而言0或約0)之範圍內。
在本發明實施例中,界定於L*a*b*色彩空間中之L*、a*及b*可藉由藉助色差儀(商品名「CR-200」,由Minolta有限公司製造;色差儀)之量測來確定。L*a*b*色彩空間係於1976年由國際照明協會(CIE)所推薦之色彩空間,且意指稱作CIE1976(L*a*b*)色彩空間之色彩空間。此外,L*a*b*色彩空間界定於JIS Z8729中之日本工業標準中。
在根據目標色彩對半導體背面用膜著色時,可使用染色劑(著色劑)。作為此一染色劑,可適宜地使用各種深色染色劑,例如黑色染色劑、藍色染色劑及紅色染色劑,且黑色染色劑更適宜。染色劑可係顏料及染料中之任何一者。染色劑可單獨地或以兩個或更多個種類之組合形式採用。就此而言,作為染料,可使用任何形式之染料,例如酸性染料、反應性染料、直接染料、分散染料及陽離子染料。此外,亦就顏料而言,其形式不受特別限制且可從已知顏料之中適宜地選擇並使用。
特定而言,當使用染料作為染色劑時,染料因溶於半導體背面用膜中而變成均勻地或幾乎均勻地分散之狀態,由此可容易地產生具有均勻或幾乎均勻之色彩密度的半導體背面用膜(因此,半導體背面用切晶帶一體膜)。因此,當使用染料作為染色劑時,半導體背面用切晶帶一體膜中之半導體背面用膜可具有均勻或幾乎均勻之色彩密度且可增強標記性質及外觀性質。
黑色染色劑不受特別限制且可適宜地選自(例如)無機黑色顏料及黑色染料。此外,黑色染色劑可係其中將青色染色劑(藍綠色染色劑)、紫紅色染色劑(紅紫色染色劑)與黃色染色劑(黃色染色劑)混合之染色劑混合物。黑色染色劑可單獨地或以兩個或更多個種類之組合形式採用。當然,黑色染色劑可與具有不同於黑色之色彩之染色劑組合使用。
黑色染色劑之具體實例包括碳黑(例如爐法碳黑、槽法碳黑、乙炔碳黑、熱裂法碳黑或燈黑)、石墨、氧化銅、二氧化錳、偶氮型顏料(例如,甲亞胺偶氮黑)、苯胺黑、苝黑、鈦黑、青黑、活性碳、鐵氧體(例如非磁性鐵氧體或磁性鐵氧體)、磁石、氧化鉻、氧化鐵、二硫化鉬、鉻錯合物、複合氧化物型黑色顏料及蒽醌型有機黑色顏料。
在本發明中,作為該黑色染色劑,亦可利用黑色染色劑,例如C.I.溶劑黑3、7、22、27、29、34、43、70、C.I.直接黑17、19、22、32、38、51、71、C.I.酸性黑1、2、24、26、31、48、52、107、109、110、119、154、及C.I.分散黑1、3、10、24;黑色顏料,例如C.I.顏料黑1、7;及諸如此類。
作為此等黑色染色劑,例如,商品名「Oil Black BY」、商品名「Oil Black BS」、商品名「Oil Black HBB」、商品名「Oil Black 803」、商品名「Oil Black 860」、商品名「Oil Black 5970」、商品名「Oil Black 5906」、商品名「Oil Black 5905」(由Orient Chemical Industries有限公司製造)及諸如此類可自市面購得。
除黑色染色劑以外之染色劑之實例包括青色染色劑、紫紅色染色劑及黃色染色劑。青色染色劑之實例包括青色染料,例如C.I.溶劑藍25、36、60、70、93、95;C.I.酸性藍6及45;青色顏料,例如C.I.顏料藍1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66
;C.I.還原藍4、60;及C.I.顏料綠7。
此外,在紫紅色染色劑中,紫紅色染料之實例包括C.I.溶劑紅1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122;C.I.分散紅9;C.I.溶劑紫8、13、14、21、27;C.I.分散紫1;C.I.鹼性紅1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40;C.I.鹼性紫1、3、7、10、14、15、21、25、26、27及28。
在紫紅色染色劑中,紫紅色顏料之實例包括C.I.顏料紅1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245;C.I.顏料紫3、9、19、23、31、32、33、36、38、43、50;C.I.還原紅1、2、10、13、15、23、29及35。
此外,黃色染色劑之實例包括黃色染料,例如C.I.溶劑黃19、44、77、79、81、82、93、98、103、104、112及162;黃色顏料,例如C.I.顏料橙31、43;C.I.顏料黃1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195;C.I.還原黃1、3及20。
各種染色劑(例如青色染色劑、紫紅色染色劑及黃色染色劑)可分別單獨地或以兩個或更多個種類之組合形式採用。就此而言,在使用各種染色劑(例如青色染色劑、紫紅色染色劑及黃色染色劑)中之兩個或更多個種類時,此等染色劑之混合比(或摻合比)不受特別限制且可根據每一染色劑之種類、目標色彩等適宜地選擇。
在半導體背面用膜2係有色之情形下,有色形式不受特別限制。半導體背面用膜可係(例如)添加有著色劑之單層膜形物件。此外,膜可係層壓膜,其中至少由熱固性樹脂及著色劑層形成之樹脂層至少經層壓。就此而言,在半導體背面用膜2係樹脂層及著色劑層之層壓膜之情形下,呈層壓形式之半導體背面用膜2較佳具有層壓形式之樹脂層/著色劑層/樹脂層。在此種情形下,兩個位於著色劑層兩側之樹脂層可係具有相同組成之樹脂層或可係具有不同組成之樹脂層。
在半導體背面用膜2中,可根據需要適宜地摻合其他添加劑。除填充劑、阻燃劑、矽烷偶聯劑及離子捕獲劑以外,其他添加劑之實例包括增量劑、抗老化劑、抗氧化劑及表面活性劑。
該填充劑可係無機填充劑及有機填充劑中之任何一者但無機填充劑係合適的。藉由摻和填充劑(例如無機填充劑)可賦予半導體背面用膜導電性、改良熱導係數、控制彈性模量及諸如此類。就此而言,半導體背面用膜2可導電或不導電。無機填充劑之實例包括由以下組成之各種無機粉末:二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、陶瓷(例如碳化矽及氮化矽)、金屬或合金(例如鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀及焊料)、碳及諸如此類。填充劑可單獨地或以兩個或更多個種類之組合形式採用。具體而言,填充劑適宜地係二氧化矽且更適宜係融合二氧化矽。可藉由(例如)雷射繞射型粒徑分佈量測設備量測無機填充劑之平均顆粒直徑。
相對於100重量份數有機樹脂組份,欲納入之填充劑(尤其無機填充劑)之量較佳在5重量份數至95重量份數範圍內,更佳7重量份數至90重量份數,甚至更佳10重量份數至90重量份數。若填充劑之量在5重量份數至95重量份數範圍內,則可將半導體背面用膜之表面在與面向半導體元件之背面相對之表面側上的表面粗糙度(Ra)控制在預期範圍內。
阻燃劑之實例包括三氧化銻、五氧化二銻及溴化環氧樹脂。阻燃劑可單獨地或以兩個或更多個種類之組合形式採用。矽烷偶聯劑之實例包括β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油醚氧基丙基三甲氧基矽烷及γ-縮水甘油醚氧基丙基甲基二乙氧基矽烷。矽烷偶聯劑可單獨地或以兩個或更多個種類之組合形式採用。離子捕獲劑之實例包括水滑石及氫氧化鉍。離子捕獲劑可單獨地或以兩個或更多個種類之組合形式採用。
半導體背面用膜2可藉由(例如)利用常用方法來形成,包括將熱固性樹脂(例如酚系樹脂)及若需要熱塑性樹脂(例如苯氧基樹脂及丙烯酸系樹脂)及可選溶劑及其他添加劑混合以製備樹脂組合物,隨後使其形成膜形層。具體而言,作為半導體背面用膜之膜形層(黏合層)可藉由(例如)下述方法來形成,包括將樹脂組合物施加於切晶帶之壓敏黏合層32上之方法;包括將樹脂組合物施加於適當間隔器(例如釋放紙)上以形成樹脂層(或黏合層)且隨後將其轉移(轉印)於壓敏黏合層32上之方法;或諸如此類。就此而言,樹脂組合物可係溶液或分散液。
附帶而言,在半導體背面用膜2係由含有熱固性樹脂(例如酚系樹脂)之樹脂組合物形成之情形下,在將半導體背面用膜施加至半導體晶圓前之階段,該膜呈熱固性樹脂未固化或部分固化之狀態。在此種情形下,在將其施加至該半導體晶圓之後(具體而言,通常,在覆晶結合步驟中固化封裝材料時),半導體背面用膜中之熱固性樹脂完全或幾乎完全固化。
如上所述,由於半導體背面用膜呈熱固性樹脂未固化或部分固化之狀態,甚至當該膜含有熱固性樹脂時,因此半導體背面用膜之凝膠份數不受特別限制,但例如,適宜地選自50重量%或更低(0重量%至50重量%)之範圍且較佳為30重量%或更低(0重量%至30重量%)且尤佳為10重量%或更低(0重量%至10重量%)。半導體背面之膜凝膠份數可藉由下述量測方法來量測。
<凝膠份數量測方法>
自半導體背面用膜2取約0.1 g樣品並對其進行精確稱重(樣品重量),且在將該樣品包裹於網型片材中之後,將其在室溫下在約50 mL甲苯中浸漬1週。此後,自甲苯中取出溶劑不溶性物質(網型片材中之內容物)且在130℃下乾燥約2小時,在乾燥之後對溶劑不溶性物質進行稱重(浸漬及乾燥後之重量),且隨後根據下述表示式(a)來計算凝膠份數(重量%)。
凝膠份數(重量%)=[(浸漬及乾燥後之重量)/(樣品重量)]×100 (a)半導體背面之膜之凝膠份數可受控於樹脂組份之種類及含量及交聯劑之種類及含量以及加熱溫度、加熱時間等等。
在本發明中,在半導體背面用膜係由含有熱固性樹脂(例如酚系樹脂)之樹脂組合物形成之膜形物件之情形下,可有效地呈現對半導體晶圓之緊密黏合性。
附帶而言,由於在半導體晶圓之切割步驟中使用切削水,因此半導體背面用膜在一些情形下吸收水分而具有正常狀態或更高之含水量。當在仍維持此一高含水量之情形下實施覆晶結合時,在一些情形下,在半導體背面用膜與半導體晶圓或處理體(半導體)之間之黏合介面處殘留水蒸氣並產生鼓起。因此,藉由將半導體背面用膜構成為在其每一表面上提供具有高透濕性之核心材料之組態,水蒸氣擴散且因此可避免此一問題。根據此一觀點,在核心材料之一個表面或兩個表面上形成半導體背面用膜的多層結構可用作半導體背面用膜。核心材料之實例包括膜(例如,聚醯亞胺膜、聚酯膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、經玻璃纖維或塑膠非織造纖維強化之樹脂基板、矽基板及玻璃基板。
半導體背面用膜2之厚度(在層壓膜之情形下的總厚度)不受特別限制,但可(例如)適宜地選自約2 μm至200 μm之範圍。此外,厚度較佳為約4 μm至160 μm、更佳約6 μm至100 μm且尤其約10 μm至80 μm。
呈未固化狀態之半導體背面用膜2在23℃下之抗張儲存彈性模數較佳為1 GPa或更高(例如,1 GPa至50 GPa)、更佳2 GPa或更高,且尤其3 GPa或更高係適宜的。當抗張儲存彈性模數係1 GPa或更高時,在將半導體晶片連同半導體背面用膜2一起自切晶帶之壓敏黏合層32剝離後,將半導體背面用膜2置於支撐件上並實施輸送及諸如此類時,可有效地抑制或防止該半導體背面用膜附著至該支撐件。就此而言,支撐件係(例如)載體帶中之頂部帶、底部帶及諸如此類。在半導體背面用膜2系由含有熱固性樹脂之樹脂組合物形成之情形下,如上文所述,該熱固性樹脂通常呈未固化或部分地固化之狀態,使得半導體背面用膜在23℃下的抗張儲存彈性模數通常係呈該熱固性樹脂未固化或部分地固化之狀態之23℃下之抗張儲存彈性模數。
此處,半導體背面用膜2可為單層或層壓複數個層之層壓膜。在層壓膜之情形下,作為呈未固化狀態之整體層壓膜,抗張儲存彈性模數確切地係1 GPa或更高(例如,1 GPa至50 GPa)。此外,呈未固化狀態下之半導體背面用膜之抗張儲存彈性模數(23℃)可藉由適宜地設定樹脂組份(熱塑性樹脂及/或熱固性樹脂)之種類及含量或填充劑(例如二氧化矽填充劑)之種類及含量來加以控制。在半導體背面用膜2係層壓複數個層之層壓膜之情形下(在半導體背面用膜具有層壓層之形式之情形下),作為層壓層形式,可例示(例如)由晶圓黏合層及雷射標記層構成之層壓形式。此外,在晶圓黏合層與雷射標記層之間,可提供其他層(中間層、光屏蔽層、強化層、有色層、基礎材料層、電磁波屏蔽層、導熱層、壓敏黏合層等)。就此而言,晶圓黏合層係對晶圓呈現優良緊密黏合性(黏合性質)之層及與晶圓背面接觸之層。另一方面,雷射標記層係呈現優良雷射標記性質之層及用於在半導體晶片背面上進行雷射標記之層。
抗張儲存彈性模數係藉由以下來測定:製備呈未固化狀態之半導體背面用膜2而不層壓於切晶帶3上並使用由Rheometrics有限公司製造之動態黏彈性量測設備「固體分析器RS A2」在處於規定溫度(23℃)及氮氣氛下在10 mm之樣品寬度、22.5 mm之樣品長度、0.2 mm之樣品厚度、1 Hz之頻率及10℃/min之溫度升高速率之條件下在抗張模式下量測彈性模數,且將量測彈性模數視為所獲抗張儲存彈性模數之值。
較佳地,用間隔器(釋放襯墊)在其至少一個表面上保護半導體背面用膜2(圖中未顯示)。舉例而言,在半導體背面用切晶帶一體膜1中,可在半導體背面用膜之至少一個表面上提供間隔器。另一方面,在未與切晶帶一體化之半導體背面用膜中,可在半導體背面用膜之一個表面或兩個表面上提供間隔器。間隔器具有作為保護材料用於保護半導體背面用膜直至其被實際使用之功能。此外,在半導體背面用切晶帶一體膜1中,在將半導體背面用膜2轉移至切晶帶之基礎材料之壓敏黏合層32時,間隔器可進一步用作支撐基礎材料。在半導體晶圓附著至半導體背面用膜上時,剝離間隔器。作為間隔器,亦可使用表面經釋放劑(例如基於氟之釋放劑或基於長鏈丙烯酸烷基酯之釋放劑)塗佈之聚乙烯或聚丙烯膜以及塑膠膜(例如聚對苯二甲酸乙二酯)、紙或諸如此類。該間隔器可藉由通常已知之方法來形成。此外,間隔器之厚度或諸如此類不受特別限制。
在半導體背面用膜2未與切晶帶3層壓在一起之情形下,半導體背面用膜2可與在其兩側上具有釋放層之一個間隔器卷成卷,其中膜2可經在其兩個表面上具有釋放層之間隔器保護;或膜2可經在其至少一個表面上具有釋放層之間隔器保護。
此外,半導體背面用膜2內對可見光之光透射率(可見光透射率,波長:400至800 nm)不受特別限定,但(例如)較佳在20%或更低(0至20%)之範圍內、更佳10%或低(0至10%)且尤佳5%或更低(0至5%)。當半導體背面用膜2具有超過20%之可見光透射率時,擔心光透射率可能不利地影響半導體元件。可見光透射率(%)可受控於半導體背面用膜2之樹脂組份之種類及含量、著色劑(例如顏料或染料)之種類及含量、無機填充料之含量及諸如此類。
可如下測定半導體背面用膜2之可見光透射率(%)。亦即,製備本身厚度(平均厚度)為20 μm之半導體背面用膜2。隨後,在規定強度內用波長為400至800 nm之可見光輻照半導體背面用膜2[設備:由Shimadzu公司製造之可見光產生設備][商品名「ABSORPTION SPECTRO PHOTOMETER」],並量測透射可見光之強度。此外,基於可見光穿過半導體背面用膜2之前及之後其透射率之強度變化測定可見光透射率(%)。就此而言,亦可自厚度不為20 μm之半導體背面用膜2之可見光透射率(%;波長:400 nm至800 nm)的值導出厚度為20 μm之半導體背面用膜2的可見光透射率(%;波長:400 nm至800 nm)。在本發明中,可見光透射率(%)係在厚度為20 μm之半導體背面用膜2之情形下測定,但本發明之半導體背面用膜並不限於厚度為20 μm者。
此外,作為半導體背面用膜2,具有較低水分吸收率者更佳。具體而言,水分吸收率較佳為1重量%或更低且更佳0.8重量%或更低。藉由將水分吸收率調節至1重量%或更低,可增強雷射標記性質。此外,舉例而言,可在回流步驟中抑制或防止半導體背面用膜2與半導體元件之間產生空隙。水分吸收率係自在使半導體背面用膜2在85℃之溫度及85% RH之濕度之氣氛下靜置168小時之前及之後的重量變化所計算之值。在半導體背面用膜2係由含有熱固性樹脂之樹脂組合物形成之情形下,水分吸收率意指當使該膜在熱固化後在85℃之溫度及85% RH之濕度之氣氛下靜置168小時所獲得的值。此外,水分吸收率可藉由(例如)改變所欲添加無機填充劑之量來調節。
此外,作為半導體背面用膜2,具有較小比率之揮發性物質者更佳。具體而言,半導體背面用膜2在加熱處理後之重量減少之比率(重量減少比)較佳為1重量%或更低且更佳0.8重量%或更低。加熱處理之條件係250℃之加熱溫度及1小時之加熱時間。藉由將重量減少比調節至1重量%或更低,可增強雷射標記性質。此外,舉例而言,可在回流步驟中抑制或防止覆晶型半導體裝置中產生裂紋。重量減少比可藉由(例如)添加能夠在無鉛焊料回流時減少裂紋之產生之無機物質來加以調節。在半導體背面用膜2係由含有熱固性樹脂組份之樹脂組合物形成之情形下,重量減少比係當在250℃之溫度及1小時之加熱時間之條件下加熱熱固化後之半導體背面用膜時所獲得之值。
切晶帶3包括基礎材料31及形成於基礎材料31上之壓敏黏合層32。因此,切晶帶3具有層壓基礎材料31與壓敏黏合層32之組態即足矣。基礎材料(支撐基礎材料)可用作壓敏黏合層及諸如此類之支撐材料。基礎材料31較佳具有輻射射線透射性質。作為基礎材料31,例如,可使用(例如)適宜薄材料,例如基於紙之基礎材料,例如紙;基於纖維之基礎材料,例如織物、非織造纖維、毛氈、及網狀物;基於金屬之基礎材料,例如金屬箔及金屬板;塑膠基礎材料,例如塑膠膜及片材;基於橡膠之基礎材料,例如橡膠片材;發泡體,例如發泡片材;及其壓層[特定而言,基於塑膠之材料與其他基礎材料之壓層、塑膠膜(或片材)相互之壓層、等等]。於本發明中,作為基礎材料,可適宜地採用塑膠基礎材料,例如塑膠膜及塑膠片材。該等塑膠材料之原材料之實例包括烯烴樹脂,例如聚乙烯(PE)、聚丙烯(PP)、及乙烯-丙烯共聚物;使用乙烯作為單體組份之共聚物,例如乙烯-乙酸乙烯酯共聚物(EVA)、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、及乙烯-(甲基)丙烯酸酯(無規、交替)共聚物;聚酯,例如聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、及聚對苯二甲酸丁二酯(PBT);丙烯酸系樹脂;聚氯乙烯(PVC);聚胺基甲酸酯;聚碳酸酯;聚苯硫醚(PPS);基於醯胺之樹脂,例如聚醯胺(耐綸)及全芳香族聚醯胺(芳香族聚醯胺(aramide));聚醚醚酮(PEEK);聚醯亞胺;聚醚醯亞胺;聚二氯亞乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);基於纖維素之樹脂;聚矽氧樹脂;及氟化樹脂。
另外,基礎材料31之材料包括聚合物,例如上述樹脂之交聯材料。若需要,塑膠膜可不拉伸即使用或可在經受單軸或雙軸拉伸處理後使用。根據藉由拉伸處理或諸如此類賦予熱收縮性質之樹脂片材,藉由基礎材料31在切割後之熱收縮來減小壓敏黏合層32與半導體背面用膜2之間之黏合區域,且因此可有助於回收半導體晶片。
可對基礎材料31之表面上施用常用表面處理(例如,化學或物理處理,例如鉻酸鹽處理、暴露於臭氧、暴露於火焰、暴露於高壓電擊、或離子化輻射處理、或使用底塗劑(例如,稍後提及之壓敏黏合劑物質)之塗佈處理)以增強與毗鄰層之緊密黏合性、固持性質及諸如此類。
作為基礎材料31,可適宜地選擇並使用相同種類或不同種類之材料,且若需要,可摻合併使用若干種類之材料。此外,為賦予基礎材料31抗靜電能力,可在基礎材料31上形成由金屬、其合金或氧化物構成的厚度為約30至500埃之導電物質之蒸氣沈積層。基礎材料31可係單層或其兩個或更多個之多層。
基礎材料31之厚度(在層壓層之情形下總厚度)不受特別限制且可根據強度、撓性、既定使用目的及諸如此類來適當地選擇。舉例而言,厚度通常為1,000 μm或更少(例如1 μm至1,000 μm)、較佳10 μm至500 μm、更佳20 μm至300 μm、且尤佳約30 μm至200 μm,但並不限於此。
附帶而言,基礎材料31可含有處於其中不損害本發明之優點及諸如此類之範圍內之各種添加劑(著色劑、填充劑、增塑劑、抗老化劑、抗氧化劑、表面活性劑、阻燃劑等)。
壓敏黏合層32係由壓敏黏合劑形成且具有壓敏黏合性。壓敏黏合劑並無具體界定,其可適宜地選自已知的壓敏黏合劑。具體而言,舉例而言,作為壓敏黏合劑,彼等具有上述特性者適宜地選自已知壓敏黏合劑,例如丙烯酸系壓敏黏合劑、基於橡膠之壓敏黏合劑、基於乙烯基烷基醚之壓敏黏合劑、基於聚矽氧之壓敏黏合劑、基於聚酯之壓敏黏合劑、基於聚醯胺之壓敏黏合劑、基於胺基甲酸酯之壓敏黏合劑、基於氟之壓敏黏合劑、基於苯乙烯-二烯嵌段共聚物之壓敏黏合劑、及藉由向上述壓敏黏合劑中納入熔點不高於200℃之熱熔性樹脂製備之蠕變特性改良之壓敏黏合劑(舉例而言,參見JP-A 56-61468、JP-A-61-174857、JP-A-63-17981、JP-A-56-13040,以引用方式併入本文中),且本文使用該等壓敏黏合劑。作為壓敏黏合劑,此處亦使用輻射可固化壓敏黏合劑(或能量射線可固化壓敏黏合劑)及熱膨脹壓敏黏合劑。此處可單獨或組合使用一或多種該等壓敏黏合劑。
作為壓敏黏合劑,本文較佳使用丙烯酸系壓敏黏合劑及基於橡膠之壓敏黏合劑,且更佳者係丙烯酸系壓敏黏合劑。丙烯酸系壓敏黏合劑包括彼等包含一或多種(甲基)丙烯酸烷基酯單體組份之丙烯酸聚合物(均聚物或共聚物)作為基礎聚合物者。
用於丙烯酸系壓敏黏合劑之(甲基)丙烯酸烷基酯包括(例如)(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁基酯、(甲基)丙烯酸第三丁基酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等。作為(甲基)丙烯酸烷基酯,彼等烷基具有4至18個碳原子者較佳。在(甲基)丙烯酸烷基酯中,烷基可為直鏈或具支鏈。
若需要,出於改良丙烯酸聚合物之內聚力、耐熱性及交聯能力之目的,其可含有對應於可與上述(甲基)丙烯酸烷基酯共聚之任一其他單體組份(可共聚單體組份)的單元。可共聚單體組份之實例包括(例如)含羧基單體,例如(甲基)丙烯酸(丙烯酸或甲基丙烯酸)、丙烯酸羧乙基酯、丙烯酸羧戊基酯、衣康酸、馬來酸、富馬酸、巴豆酸;含酸酐基團單體,例如馬來酸酐、衣康酸酐;含羥基單體,例如(甲基)丙烯酸羥乙基酯、(甲基)丙烯酸羥丙基酯、(甲基)丙烯酸羥丁基酯、(甲基)丙烯酸羥己基酯、(甲基)丙烯酸羥辛基酯、(甲基)丙烯酸羥癸基酯、(甲基)丙烯酸羥基月桂基酯、甲基丙烯酸(4-羥甲基環己基)甲酯;含磺酸基團之單體,例如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙烷磺酸、(甲基)丙烯醯胺丙烷磺酸、(甲基)丙烯酸磺基丙基酯、(甲基)丙烯醯氧基萘磺酸;含磷酸基團之單體,例如磷酸2-羥乙基丙烯醯基酯;(N-經取代)醯胺單體,例如(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、N-丁基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥甲基丙烷(甲基)丙烯醯胺;(甲基)丙烯酸胺基烷基酯單體,例如(甲基)丙烯酸胺基乙基酯、(甲基)丙烯酸N,N-二甲基胺基乙基酯、(甲基)丙烯酸第三丁基胺基乙基酯;(甲基)丙烯酸烷氧基烷基酯單體,例如(甲基)丙烯酸甲氧基乙基酯、(甲基)丙烯酸乙氧基乙基酯;氰基丙烯酸酯單體,例如丙烯腈、甲基丙烯腈;含環氧基團之丙烯酸單體,例如(甲基)丙烯酸縮水甘油基酯;苯乙烯單體,例如苯乙烯、α-甲基苯乙烯;乙烯酯單體,例如乙酸乙烯酯、丙酸乙烯酯;烯烴單體,例如異戊二烯、丁二烯、異丁烯;乙烯醚單體,例如乙烯醚;含氮單體,例如N-乙烯基吡咯啶酮、甲基乙烯基吡咯啶酮、乙烯基吡啶、乙烯基六氫吡啶酮、乙烯基嘧啶、乙烯基六氫吡嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基嗎啉、N-乙烯基甲醯胺、N-乙烯基己內醯胺;馬來醯亞胺單體,例如N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺、N-月桂基馬來醯亞胺、N-苯基馬來醯亞胺;衣康醯亞胺單體,例如N-甲基衣康醯亞胺、N-乙基衣康醯亞胺、N-丁基衣康醯亞胺、N-辛基衣康醯亞胺、N-2-乙基己基衣康醯亞胺、N-環己基衣康醯亞胺、N-月桂基衣康醯亞胺;琥珀醯亞胺單體,例如N-(甲基)丙烯醯氧基亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-6-氧基六亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-8-氧基八亞甲基琥珀醯亞胺;乙醇酸丙烯醯基酯單體,例如聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯;具有雜環、鹵素原子、矽原子、或諸如此類之丙烯酸酯單體、例如(甲基)丙烯酸四氫呋喃酯、氟(甲基)丙烯酸酯、聚矽氧(甲基)丙烯酸酯;多官能單體,例如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、異戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、異戊四醇三(甲基)丙烯酸酯、二異戊四醇六(甲基)丙烯酸酯、環氧丙烯酸酯、聚酯丙烯酸酯、胺基甲酸酯丙烯酸酯、二乙烯苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯等。此處可單獨或組合使用一或多種此等可共聚單體組份。
本發明中有用之輻射可固化壓敏黏合劑(或能量射線可固化壓敏黏合劑)(組合物)包括(例如)內型輻射可固化壓敏黏合劑(其包含作為基礎聚合物之在聚合物側鏈、主鏈或主鏈末端中具有自由基反應性碳碳雙鍵的聚合物)、及藉由向壓敏黏合劑中納入UV可固化單體組份或寡聚物組份製備的輻射可固化壓敏黏合劑。此處亦有用之熱膨脹壓敏黏合劑包括(例如)彼等包含壓敏黏合劑及發泡劑(尤其熱膨脹微球體)者。
在本發明中,壓敏黏合層32可含有在不損害本發明之優點之範圍內之各種添加劑(例如,增黏樹脂、著色劑、增稠劑、增量劑、填充劑、增塑劑、抗老化劑、抗氧化劑、表面活性劑、交聯劑等)。
交聯劑不受特別限制且可使用已知交聯劑。特定而言,作為交聯劑,不僅可提及基於異氰酸酯之交聯劑、基於環氧之交聯劑、基於三聚氰胺之交聯劑及基於過氧化物之交聯劑,而且可提及基於尿素之交聯劑、基於金屬醇鹽之交聯劑、基於金屬螯合物之交聯劑、基於金屬鹽之交聯劑、基於碳二亞胺之交聯劑、基於噁唑啉之交聯劑、基於氮丙啶之交聯劑、基於胺之交聯劑及諸如此類,且基於異氰酸酯之交聯劑及基於環氧之交聯劑係適宜的。交聯劑可單獨地或以兩個或更多個種類之組合形式採用。附帶而言,欲使用之交聯劑之量不受特別限制。
基於異氰酸酯之交聯劑之實例包括低碳數脂肪族多異氰酸酯,例如1,2-伸乙基二異氰酸酯、1,4-伸丁基二異氰酸酯、及1,6-六亞甲基二異氰酸酯;脂環族多異氰酸酯,例如伸環戊基二異氰酸酯、伸環己基二異氰酸酯、異佛爾酮二異氰酸酯、氫化伸甲苯基二異氰酸酯及氫化伸二甲苯基二異氰酸酯;及芳香族多異氰酸酯,例如2,4-伸甲苯基二異氰酸酯、2,6-伸甲苯基二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯及伸二甲苯基二異氰酸酯。另外,亦可使用三羥甲基丙烷/伸甲苯基二異氰酸酯三聚體加合物[商品名「COLONATE L」,由Nippon Polyurethane Industry有限公司製造]、三羥甲基丙烷/六亞甲基二異氰酸酯三聚體加合物[商品名「COLONATE HL」,由Nippon Polyurethane Industry有限公司製造]、及諸如此類。此外,基於環氧之交聯劑之實例包括N,N,N',N'-四縮水甘油基間伸二甲苯基二胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨糖醇聚縮水甘油醚、甘油聚縮水甘油醚、異戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、山梨醇酐聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、異氰尿酸三縮水甘油基-叁(2-羥乙基)酯、間苯二酚二縮水甘油醚、及雙酚-S-二縮水甘油醚,亦及其分子中具有兩個或更多個環氧基團之基於環氧之樹脂。
在本發明中,可替代使用交聯劑或與交聯劑一起使用經由用電子射線或UV射線輻照交聯壓敏黏合層。
壓敏黏合層32可(例如)藉由利用包括將壓敏黏合劑與可選溶劑以及其他添加劑混合並隨後使該混合物成形為片狀層之常用方法來形成。具體而言,舉例而言,可提及下述方法:包括在基礎材料31上施加含有壓敏黏合劑及可選溶劑及其他添加劑之混合物之方法;包括在適當間隔器(例如釋放紙)上施加上述混合物以形成壓敏黏合層32並隨後將其轉移(轉印)於基礎材料31上之方法;或諸如此類。
未壓敏黏合層32之厚度並無具體界定,其可為(例如)5 μm至300 μm(較佳5 μm至200 μm、更佳5 μm至100 μm、甚至更佳7 μm至50 μm)左右。若壓敏黏合層32之厚度屬於該範圍,則該層可呈現適宜壓敏黏合力。壓敏黏合層32可係單層或多層。
切晶帶3之壓敏黏合層32與覆晶型半導體背面用膜2之黏合力(23℃,剝離角為180度,剝離速率為300 mm/min)較佳在0.02 N/20 mm至10 N/20 mm範圍內,更佳0.05 N/20 mm至5 N/20 mm。若黏合力係至少0.02 N/20 mm,則在切割半導體晶圓時可防止半導體晶片脫離。另一方面,若黏合力係至多10 N/20 mm,則在拾取半導體晶片時有利於其剝離並防止壓敏黏合劑存留。
附帶而言,在本發明中,可使得覆晶型半導體背面用膜2或半導體背面用切晶帶一體膜1具有抗靜電功能。由於此組態,可防止電路因在黏合其時及在剝離其時產生靜電能或因靜電能對半導體晶圓或諸如此類充電而引起斷裂。賦予抗靜電功能可藉由適當方式(例如添加抗靜電劑或導電物質至基礎材料31、壓敏黏合層32及半導體背面用膜2之方法或提供由電荷轉移錯合物、金屬膜或諸如此類構成之導電層至基礎材料31上之方法)來實施。作為該等方法,擔心改變該半導體晶圓之品質之雜質離子難以產生之方法係較佳的。出於賦予導電性、改良熱導係數及諸如此類目的所摻合之導電物質(導電填充劑)之實例包括銀、鋁、金、銅、鎳、導電合金或諸如此類之球形、針形、片材形金屬粉末;金屬氧化物,例如氧化鋁;非晶形碳黑及石墨。然而,自不具有漏電之觀點出發,該半導體背面用膜2較佳係不導電的。
此外,覆晶型半導體背面用膜2或半導體背面用切晶帶一體膜1可以捲繞成卷之形式形成或可以層壓片材(膜)之形式形成。舉例而言,在膜呈捲繞成卷之形式的情形下,該膜以根據需要由間隔器保護半導體背面用膜2或半導體背面用膜2及切晶帶3之層壓板的狀態捲繞成卷,藉此該膜可製備為呈捲繞成卷之狀態或形式之半導體背面用膜2或半導體背面用切晶帶一體膜1。就此而言,呈其中將其捲繞成卷之狀態或形式之半導體背面用切晶帶一體膜1可由基礎材料31、形成於基礎材料31之一個表面上之壓敏黏合層32、形成於壓敏黏合層31上之半導體背面之膜2與形成於基礎材料32之另一個表面上之經可釋放處理層(後表面經處理層)構成。
附帶而言,半導體背面用切晶帶一體膜1之厚度(半導體背面用膜之厚度與包括基礎材料31及壓敏黏合層32之切晶帶之厚度的總厚度)可(例如)選自8 μm至1,500 μm之範圍且較佳20 μm至850 μm,更佳31 μm至500 μm且尤佳47 μm至330 μm。
就此而言,在半導體背面用切晶帶一體膜1中,藉由控制半導體背面用膜2之厚度與切晶帶3之壓敏黏合層32之厚度的比率或半導體背面用膜2之厚度與切晶帶之厚度(基礎材料31與壓敏黏合層32之總厚度)的比率,可改良切割步驟時之切割性質、拾取步驟時之拾取性質及諸如此類,且可自半導體晶圓之切割步驟至半導體晶片之覆晶結合步驟有效地利用半導體背面用切晶帶一體膜1。
闡述本發明實施例之半導體背面用切晶帶一體膜的製造方法,同時使用示於圖1中之半導體背面用切晶帶一體膜1作為實例。首先,可藉由通常已知成膜方法來形成基礎材料31。成膜方法之實例包括在經剝離半導體晶片上之壓延膜形成方法(calendar film-forming method)、在有機溶劑中之澆鑄方法、在緊密密封系統中之膨脹擠壓方法、T模具擠出方法、共擠出方法及乾式層壓方法。
其後,將壓敏黏合劑組合物施加至基礎材料31並於其上乾燥(且視情況在加熱下交聯)以形成壓敏黏合層32。塗佈系統包括輥塗、絲網塗佈、凹板塗佈等。可將壓敏黏合劑組合物直接施加至基礎材料31以在基礎材料31上形成壓敏黏合層32;或可將壓敏黏合劑組合物施加至釋放片材或表面經潤滑處理之類似物以在其上形成壓敏黏合層32,且可將壓敏黏合層32轉移至基礎材料31上。隨即,形成在基礎材料31上形成壓敏黏合層32的切晶帶3。
另一方面,將用於形成半導體背面用膜2之形成材料施加至釋放片材上以形成具有預定乾燥厚度之塗層,且隨後在預定條件下乾燥(視情況在需要熱固化之情形下加熱,並乾燥)以形成塗層。
在此情形下,釋放片材較佳具有50 nm至3 μm、更佳60 nm至2 μm、甚至更佳70 nm至1 μm之表面粗糙度(Ra)。在釋放片材之表面粗糙度(Ra)在50 nm至3 μm範圍內時,塗層(半導體背面用膜2)在面向該釋放片材之一側上的表面粗糙度可為期望者。
可將用於形成半導體背面用膜2之形成材料施加至第一釋放片材上,且隨後可將第二釋放片材重疊於其上並其後進行乾燥以形成半導體背面用膜2。在此情形下,選擇第一釋放片材或第二釋放片材中之任一者以可使得半導體背面用膜2之表面平滑,且選擇二者中之另一者以可使得半導體背面用膜2之表面粗糙度(Ra)在50 nm至3 μm範圍內。將塗層(半導體背面用膜2)轉移至壓敏黏合層32上以藉此在壓敏黏合層32上形成半導體背面用膜2。
可端視其中填充劑之粒徑(平均粒徑、最大粒徑等)及量控制半導體背面用膜2。關於填充劑之粒徑,重要的是其平均粒徑或最大粒徑係50 nm至3 μm,但即使在該尺寸超過3 μm時,端視半導體背面用膜之厚度及填充劑之量,半導體背面用膜2之表面粗糙度(Ra)亦可在50 nm至3 μm範圍內。具體而言,填充劑之平均粒徑較佳係100 nm至2 μm、更佳300 nm至1 μm。填充劑之最大粒徑較佳係至多5 μm、更佳至多4 μm、甚至更佳至多3 μm(但重要的是填充劑之平均粒徑在上述範圍內)。根據上文,可獲得本發明之半導體背面用切晶帶一體膜1。在形成半導體背面用膜2時需要熱固化之情形下,重要的是,實施熱固化之程度應使得可部分欲為該膜之固化塗層,但較佳未熱固化塗層。
可在製造半導體裝置(包括覆晶連接步驟)時適宜地使用本發明之半導體背面用切晶帶一體膜1。亦即,在製造覆晶安裝式半導體裝置時使用本發明之半導體背面用切晶帶一體膜1且因此該覆晶安裝式半導體裝置係在半導體背面用切晶帶一體膜1之半導體背面用膜2附著至該半導體晶片之背面之狀況或形式下製造。因此,本發明之半導體背面用切晶帶一體膜1可用於覆晶安裝式半導體裝置(呈其中藉由覆晶結合方法將該半導體晶片固定至例如基板之黏附體之狀態或形式之半導體裝置)。
與在半導體背面用切晶帶一體膜1中一樣,半導體背面用膜2亦用於覆晶安裝式半導體裝置(在覆晶結合方法中呈半導體晶片固定至黏附體(例如基板或諸如此類)之狀態或形式的半導體裝置)。
在附著有本發明之半導體背面用膜之半導體元件儲存於儲存用部件(例如,蓋帶)中時,在其儲存期間防止形成於半導體元件之背面上的半導體背面用膜黏結或黏合至儲存用部件,且在自儲存用部件取出半導體元件時,可容易地將其取出。
半導體晶圓不受特別限制,只要其係已知或常用半導體晶圓且可從由各種材料製成之半導體晶圓之中適當地選擇並使用。於本發明中,作為半導體晶圓,可適宜地使用矽晶圓。
製造本發明半導體裝置之方法將參照圖2A至2D來闡述。圖2A至2D係顯示在使用半導體背面用切晶帶一體膜1之情形下製造半導體裝置之方法的剖面示意圖。
根據半導體裝置製造方法,可使用半導體背面用切晶帶一體膜1製造半導體裝置。具體而言,該方法包含將半導體晶圓附著至半導體背面用切晶帶一體膜上之步驟、切割半導體晶圓之步驟、拾取藉由切割獲得之半導體元件的步驟、及將半導體元件覆晶連接至黏附體上之步驟。
附帶而言,在使用半導體背面用膜2時,亦可根據使用半導體背面用切晶帶一體膜1之半導體裝置製造方法來製造半導體裝置。舉例而言,將半導體背面用膜2附著至切晶帶並與其一體化以製備半導體背面用切晶帶一體膜,且可使用切晶帶一體膜製造半導體裝置。在此情形下,使用半導體背面用膜2之半導體裝置製造方法包含上述使用半導體背面用切晶帶一體膜之半導體裝置製造方法中之各步驟,以及與該等步驟組合之以使半導體背面用膜可與切晶帶之壓敏黏合層接觸之方式附著半導體背面用膜及切晶帶之另一步驟。
或者,可將所用半導體背面用膜2直接附著至半導體晶圓而不與切晶帶一體化。在此情形下,使用半導體背面用膜2之半導體裝置製造方法依次包含將半導體背面用膜附著至半導體晶圓上之步驟以及以半導體背面用膜可與切晶帶之壓敏黏合層接觸之方式將切晶帶附著至附著有半導體晶圓之半導體背面用膜之步驟,而不包含在上述使用半導體背面用切晶帶一體膜之半導體裝置製造方法中將半導體晶圓附著至半導體背面用切晶帶一體膜上之步驟。
在其另一應用實施例中,可將半導體背面用膜2直接附著至藉由將半導體晶圓切割成個別半導體晶片製備之半導體晶片。在此情形下,使用半導體背面用膜2之半導體裝置製造方法包含(例如)至少將切晶帶附著至半導體晶圓之步驟、切割半導體晶圓之步驟、拾取藉由切割獲得之半導體元件的步驟、將半導體元件覆晶連接至黏附體上之步驟、及將半導體背面用膜附著至半導體元件之步驟。
首先,如圖2A中所示,將視情況提供於半導體背面用切晶帶一體膜1之半導體背面用膜2上之間隔器適宜地剝離且將半導體晶圓4附著至欲藉由黏合及固持固定之半導體背面用膜2上(安裝步驟)。此時,半導體背面用膜2呈未固化狀態(包括半固化狀態)。此外,將半導體背面用切晶帶一體膜1附著至半導體晶圓4之背面。半導體晶圓4之背面意指與電路面相對之面(亦稱作非電路面、非電極形成面等)。附著方法不受特別限定,但壓合方法較佳。壓合通常係藉由用碾壓工具(例如壓輥)碾壓來實施。
其後,如圖2B中所示,切割半導體晶圓4。因此,將半導體晶圓4切削成規定大小並使其個體化(形成為小件)以製造半導體晶片5。舉例而言,自半導體晶圓4之電路面側根據正常方法來實施該切割。此外,本步驟可採用(例如)形成抵達半導體背面用切晶帶一體膜1之狹長切口之稱作全切之切削方法。用於本步驟之切割設備不受特別限制,且可使用通常已知的設備。此外,由於半導體晶圓4係由具有半導體背面用膜之半導體背面用切晶帶一體膜1黏合併固定,因此可抑制晶片裂紋及晶片脫離,同時亦可抑制半導體晶圓4之損壞。就此而言,當半導體背面用膜2係由含有環氧樹脂之樹脂組合物形成時,在切削表面處可抑制或防止自半導體背面用膜之黏合層產生黏合劑擠出,甚至當藉由切割來切削其時。因此,可抑制或防止切削表面本身重新附著(成塊)且因此可進一步更方便地實施在下文中欲提及之拾取。
在展開半導體背面用切晶帶一體膜1之情形下,可使用通常已知的展開設備來實施展開。該展開設備具有能夠將該半導體背面用切晶帶一體膜1向下推進經過切割環之環形外環及具有小於該外環之直徑且支撐該半導體背面用切晶帶一體膜之內環。由於該展開步驟,因此可防止毗鄰半導體晶片因在下文欲提及之拾取步驟中彼此接觸而損壞。
為收集黏合且固定至半導體背面用切晶帶一體膜1之半導體晶片5,如圖2C中所展示對半導體晶片5實施拾取以將半導體晶片5連同半導體背面用膜2一起自切晶帶3剝離。拾取方法不受特別限制,且可採用習知之各種方法。舉例而言,可提及包括用針將每一半導體晶片5自半導體背面用切晶帶一體膜1之基礎材料31側向上推進並用拾取設備拾取經推進半導體晶片5之方法。就此而言,利用半導體背面用膜2保護所拾取半導體晶片5之背面。
其後,將拾取之半導體晶片5容納於儲存用部件中用於其傳送。在儲存用部件中,在帶狀厚板之機器方向上以預定間隔形成電子部分外殼凹槽。在將半導體晶片5放入凹槽中後,用蓋帶熱密封部件之上表面,隨後將部件捲繞成卷軸並傳送。
在半導體晶片傳送至之地方,自儲存用部件剝離蓋帶並由空氣噴嘴吸附所容納半導體晶片5。根據覆晶結合方法(覆晶安裝方法)將由空氣噴嘴吸附之半導體晶片5固定至黏附體(例如基板)上,如圖2D中所示。具體而言,根據普通方法以使半導體晶片5之電路面(此可稱作表面、電路圖案形成表面或電極形成表面)可面向黏附體6之方式將半導體晶片5固定至黏附體6上。舉例而言,在形成於半導體晶片5之電路表面側上之凸塊51抵靠附著至黏附體6之連接墊的結合導電材料(例如焊料)61碾壓時,導電材料熔融以使半導體晶片5與黏附體6之間牢固電連接且半導體晶片5藉此固定至黏附體6(覆晶結合步驟)。在此情形下,在半導體晶片5與黏附體6之間形成間隙,且間隙距離通常可為30 μm至300 μm左右。在半導體晶片5覆晶結合(覆晶連接)至黏附體6上後,重要的是,清除半導體晶片5與黏附體6之間之介面及間隙且藉由用封裝材料(例如封裝樹脂)填充間隙將二者密封起來。
作為黏附體6,可使用各種基板,例如引線框架及電路板(例如佈線電路板)。基板之材料不受特別限制且可提及陶瓷基板及塑膠基板。塑膠基板之實例包括環氧基板、雙馬來醯亞胺三嗪基板及聚醯亞胺基板。
於覆晶結合步驟中,凸塊及導電材料之材料不受特別限制且其實例包括焊料(合金),例如基於錫-鉛之金屬材料、基於錫-銀之金屬材料、基於錫-銀-銅之金屬材料、基於錫-鋅之金屬材料、及基於錫-鋅-鉍之金屬材料、以及基於金之金屬材料及基於銅之金屬材料。
附帶而言,在覆晶結合步驟中,熔化導電材料以連接半導體晶片5之電路面側處之凸塊與黏附體6之表面上之導電材料。在熔化導電材料時之溫度通常為約260℃(例如,250℃至300℃)。可藉由用環氧樹脂或類似物形成半導體背面用膜來將本發明之半導體背面用切晶帶一體膜製成具有能夠承受覆晶結合步驟中之高溫之耐熱性。
在本步驟中,較佳洗滌半導體晶片5與黏附體6之間的相對面(電極形成面)及間隙。在洗滌時欲使用之洗滌液不受特別限制且其實例包括有機洗滌液及水性洗滌液。本發明之半導體背面用切晶帶一體膜中之半導體背面之膜對洗滌液具有耐溶劑性且對此等洗滌液大致無溶解性。因此,如上所述,可採用各種洗滌液作為洗滌液且該洗滌可藉由任一習用方法來達成而無需任何專用洗滌液。
其後,實施封裝步驟以封裝覆晶結合之半導體晶片5與黏附體6之間之間隙。使用封裝樹脂來實施封裝步驟。此時之封裝條件不受特別限制,但封裝樹脂之固化通常在175℃下實施60秒至90秒。然而,於本發明中,對此沒有限制,固化可在165℃至185℃之溫度下實施幾分鐘,舉例而言。由於此步驟,半導體背面用膜2可完全或幾乎完全固化且可以優良緊密黏合性附著至半導體元件之背面。此外,本發明之半導體背面用膜2可連同封裝步驟中之封裝材料一起熱固化,甚至當膜呈未固化狀態時,使得無需新添加熱固化半導體背面用膜2之步驟。
封裝樹脂不受特別限制,只要該材料係具有絕緣性質(絕緣樹脂)之樹脂即可,且可在已知封裝材料(例如封裝樹脂)中適宜地選擇並使用。該封裝樹脂較佳係具有彈性之絕緣樹脂。該封裝樹脂之實例包括含有環氧樹脂之樹脂組合物。作為環氧樹脂,可提及上文中所例示之環氧樹脂。此外,由含有環氧樹脂之樹脂組合物構成之封裝樹脂可含有不同於環氧樹脂之熱固性樹脂(例如酚系樹脂)或除環氧樹脂以外的熱塑性樹脂。附帶而言,亦可利用酚系樹脂作為環氧樹脂之固化劑,且作為酚系樹脂,可提及上文中所例示之酚系樹脂。
根據使用半導體背面用切晶帶一體膜1或半導體背面用膜2製造之半導體裝置(覆晶安裝式半導體裝置),半導體背面用膜附著至該半導體晶片之背面,且因此可以優良可見度施加雷射標記。特定而言,甚至當該標記方法係雷射標記方法時,可以優良反差比施加雷射標記,且可以良好可見度觀察到藉由雷射標記所施加之各種資訊(例如,文字資訊及圖形資訊)。在雷射標記時,可利用已知雷射標記設備。此外,作為雷射,可利用各種雷射,例如氣體雷射、固態雷射及液體雷射。特定而言,作為氣體雷射,可利用任何已知氣體雷射而無特別限制但二氧化碳雷射(CO2
雷射)及准分子雷射(ArF雷射、KrF雷射、XeCl雷射、XeF雷射等)係適宜的。作為固態雷射,可利用任何已知固態雷射而無特別限制但YAG雷射(例如Nd:YAG雷射)及YVO4
雷射係適宜的。
由於使用本發明之半導體背面用切晶帶一體膜1或半導體背面用膜2製造之半導體裝置係藉由覆晶安裝方法安裝之半導體裝置,因此該裝置具有與藉由晶粒結合安裝方法安裝之半導體裝置相比薄化及小型化之形狀。因此,可適宜地採用半導體裝置作為各種電子裝置及電子部分或其材料及部件。具體而言,作為利用本發明之覆晶安裝式半導體裝置之電子裝置,可提及所謂「行動電話」及「PHS」、小型電腦[例如,所謂「PDA」(手持式終端機)、所謂「筆記本型個人電腦」、所謂「Net Book(商品名)」、及所謂「可戴式電腦」等]、呈「行動電話」與電腦一體化之形式之小型電子裝置、所謂「Digital Camara(商品名)」、所謂「數位攝影機」、小型電視機、小型遊戲機、小型數位聲訊播放器、所謂「電子記事本」、所謂「電子詞典」、用於所謂「電子書」之電子裝置終端機、諸如小型數位型手錶等行動電子裝置(可攜式電子裝置)、及諸如此類。不必說,亦可提及除行動電子裝置以外的電子裝置(固定式電子裝置等),例如,所謂「桌上型個人電腦」、薄型電視機、用於記錄及重現之電子裝置(硬磁碟記錄器、DVD播放器等)、投影機、微機械、及類似裝置。另外,電子部分或電子裝置及電子部分之材料及成份不受特別限制且其實例包括所謂「CPU」之部分及各種記憶體裝置(所謂「記憶體」、硬磁碟等)之成份。
下文將以例示性方式詳細闡述本發明較佳實例。然而,除非超出本發明之主旨,否則本發明並不限於以下實例。此外,除非另有說明,否則每一實例中之份數皆係重量標準。
以100份丙烯酸系樹脂(商品名「SG-708-6」,由Nagase ChemteX公司製造)計,將40份苯氧基樹脂(商品名「EP4250」,由JER有限公司製造)、129份酚系樹脂(商品名「MEH-8320」,由Meiwa Chemical有限公司製造)、663份球形二氧化矽(商品名「SO-25R」,由Admatechs有限公司製造,平均粒徑為0.5 μm)、14份染料(商品名「OIL BLACK BS」,由Orient Chemical Industries有限公司製造)及1份熱固化加速觸媒(商品名「2PHZ-PW」,由Shikoku Chemical有限公司製造)溶解於甲基乙基酮中以製備固體濃度為23.6重量%之黏合劑組合物之溶液。
將黏合劑組合物溶液施加至作為釋放襯墊(間隔器)之由厚度為50 μm之聚對苯二甲酸乙二酯膜構成之經可釋放處理膜(其已經受聚矽氧釋放處理)上,並隨後使其在130℃下乾燥2分鐘以製備厚度(平均厚度)為60 μm之覆晶型半導體背面用膜A。對於用黏合劑組合物塗佈而言,使用棒式塗佈機。
使用手動輥將覆晶型半導體背面用膜A附著至切晶帶(商品名「V-8-T」,由Nitto Denko有限公司製造;基礎材料之平均厚度為65 μm;壓敏黏合層之平均厚度為10 μm)之壓敏黏合層以製備半導體背面用切晶帶一體膜A。
以100份丙烯酸系樹脂(商品名「SG-708-6」,由Nagase ChemteX公司製造)計,將40份苯氧基樹脂(商品名「EP4250」,由JER有限公司製造)、129份酚系樹脂(商品名「MEH-8320」,由Meiwa Chemical有限公司製造)、1137份球形二氧化矽(商品名「SO-25R」,由Admatechs有限公司製造,平均粒徑為0.5 μm)、14份染料(商品名「OIL BLACK BS」,由Orient Chemical Industries有限公司製造)及1份熱固化加速觸媒(商品名「2PHZ-PW」,由Shikoku Chemical有限公司製造)溶解於甲基乙基酮中以製備固體濃度為23.6重量%之黏合劑組合物之溶液。
將黏合劑組合物溶液施加至作為釋放襯墊(間隔器)之由厚度為50 μm之聚對苯二甲酸乙二酯膜構成之經可釋放處理膜(其已經受聚矽氧釋放處理)上,並隨後使其在130℃下乾燥2分鐘以製備厚度(平均厚度)為60 μm之覆晶型半導體背面用膜B。利用黏合劑組合物之塗佈方法與實例1中相同。
使用手動輥將覆晶型半導體背面用膜B附著至切晶帶(商品名「V-8-T」,由Nitto Denko有限公司製造;基礎材料之平均厚度為65 μm;壓敏黏合層之平均厚度為10 μm)之壓敏黏合層以製備半導體背面用切晶帶一體膜B。
以100份丙烯酸系樹脂(商品名「SG-708-6」,由Nagase ChemteX公司製造)計,將40份苯氧基樹脂(商品名「EP4250」,由JER有限公司製造)、129份酚系樹脂(商品名「MEH-8320」,由Meiwa Chemical有限公司製造)、426份球形二氧化矽(商品名「SO-25R」,由Admatechs有限公司製造,平均粒徑為0.5 μm)、14份染料(商品名「OIL BLACK BS」,由Orient Chemical Industries有限公司製造)及1份熱固化加速觸媒(商品名「2PHZ-PW」,由Shikoku Chemical有限公司製造)溶解於甲基乙基酮中以製備固體濃度為23.6重量%之黏合劑組合物之溶液。
將黏合劑組合物溶液施加至作為釋放襯墊(間隔器)之由厚度為50 μm之聚對苯二甲酸乙二酯膜構成之經可釋放處理膜(其已經受聚矽氧釋放處理)上,並隨後使其在130℃下乾燥2分鐘以製備厚度(平均厚度為)60 μm之覆晶型半導體背面用膜C。利用黏合劑組合物之塗佈方法與實例1中相同。
使用手動輥將覆晶型半導體背面用膜C附著至切晶帶(商品名「V-8-T」,由Nitto Denko有限公司製造;基礎材料之平均厚度為65 μm;壓敏黏合層之平均厚度為10 μm)之壓敏黏合層以製備半導體背面用切晶帶一體膜C。
以100份丙烯酸系樹脂(商品名「SG-708-6」,由Nagase ChemteX公司製造)計,將40份苯氧基樹脂(商品名「EP4250」,由JER有限公司製造)、129份酚系樹脂(商品名「MEH-8320」,由Meiwa Chemical有限公司製造)、284份球形二氧化矽(商品名「SO-25R」,由Admatechs有限公司製造,平均粒徑為0.5 μm)、14份染料(商品名「OIL BLACK BS」,由Orient Chemical Industries有限公司製造)及1份熱固化加速觸媒(商品名「2PHZ-PW」,由Shikoku Chemical有限公司製造)溶解於甲基乙基酮中以製備固體濃度為23.6重量%之黏合劑組合物之溶液。
將黏合劑組合物溶液施加至作為釋放襯墊(間隔器)之由厚度為50 μm之聚對苯二甲酸乙二酯膜構成之經可釋放處理膜(其已經受聚矽氧釋放處理)上,並隨後使其在130℃下乾燥2分鐘以製備厚度(平均厚度)為60 μm之覆晶型半導體背面用膜D。利用黏合劑組合物之塗佈方法與實例1中相同。
使用手動輥將覆晶型半導體背面用膜D附著至切晶帶(商品名「V-8-T」,由Nitto Denko有限公司製造;基礎材料之平均厚度為65 μm;壓敏黏合層之平均厚度為10 μm)之壓敏黏合層以製備半導體背面用切晶帶一體膜D。
以100份丙烯酸系樹脂(商品名「SG-708-6」,由Nagase ChemteX公司製造)計,將40份苯氧基樹脂(商品名「EP4250」,由JER有限公司製造)、129份酚系樹脂(商品名「MEH-8320」,由Meiwa Chemical有限公司製造)、189份球形二氧化矽(商品名「SO-25R」,由Admatechs有限公司製造,平均粒徑為0.5 μm)、14份染料(商品名「OIL BLACK BS」,由Orient Chemical Industries有限公司製造)及1份熱固化加速觸媒(商品名「2PHZ-PW」,由Shikoku Chemical有限公司製造)溶解於甲基乙基酮中以製備固體濃度為23.6重量%之黏合劑組合物之溶液。
將黏合劑組合物溶液施加至作為釋放襯墊(間隔器)之由厚度為50 μm之聚對苯二甲酸乙二酯膜構成之經可釋放處理膜(其已經受聚矽氧釋放處理)上,並隨後使其在130℃下乾燥2分鐘以製備厚度(平均厚度)為60 μm之覆晶型半導體背面用膜E。利用黏合劑組合物之塗佈方法與實例1中相同。
使用手動輥將覆晶型半導體背面用膜E附著至切晶帶(商品名「V-8-T」,由Nitto Denko有限公司製造;基礎材料之平均厚度為65 μm;壓敏黏合層之平均厚度為10 μm)之壓敏黏合層以製備半導體背面用切晶帶一體膜E。
利用非接觸三維粗糙度測量儀(WYKO之NT3300)根據JIS B0601量測每一覆晶型半導體背面用膜A至E之暴露側(與釋放襯墊側相對)的表面粗糙度(Ra)。量測條件係五十倍放大率。經由中值過濾器處理所發現數據以產生預期粗糙度值。在5個不同位點分析每一覆晶型半導體背面用膜,且對數據平均化以產生膜之表面粗糙度(Ra)。結果示於下表1中。
首先,自半導體背面用切晶帶一體膜剝離間隔器,且藉由於70℃下輥壓合將半導體晶圓(直徑為8英吋且厚度為200 μm之矽鏡面晶圓)附著至半導體背面用膜上。此外,以全切削切割模式切割半導體晶圓以產生10平方毫米晶片。附著條件及切割條件係如下:
附著設備:商品名「MA-3000III」,由Nitto Seiki有限公司製造
附著速度:10 mm/min
附著壓力:0.15 MPa
附著時之階段溫度:70℃
切割設備:商品名「DFD-6361」,由DISCO公司製造
切割環:「2-8-1」(由DISCO公司製造)
切割速度:30 mm/sec
切割刀:
Z1;「203O-SE 27HCDD」,由DISCO公司製造
Z2;「203O-SE 27HCBB」,由DISCO公司製造
切割刀旋轉速度:
Z1;40,000 r/min
Z2;45,000 r/min
切削方法:分步切削
晶圓晶片尺寸:10.0平方毫米
其後,藉由用針將晶片自半導體背面用切晶帶一體膜之切晶帶側向上推進自壓敏黏合層以及覆晶型半導體背面用膜拾取藉由切割獲得之半導體晶片。拾取條件係如下:
拾取設備:商品名「SPA-300」,由Shinkawa有限公司製造
拾取針之數量:9個針
針之向上推進速度:20 mm/s
針之向上推進距離:500 μm
拾取時間:1秒
切晶帶擴展量:3 mm
由此拾取後,以使覆晶型半導體背面用膜之側可面向蓋帶之方式將其上附著有覆晶型半導體背面用膜之半導體晶片放置於蓋帶(商品名「第2663號壓敏蓋帶(Pressure-Sensitive Cover Tape No. 2663)」,由3M製造)上,且於50℃下在乾燥器中靜置4天。其後,外翻裝置保持帶,並將其上附著有覆晶型半導體背面用膜並掉落之半導體晶片的樣品分級為「良好」,且半導體晶片未掉落之樣品分級為「差」。結果示於下表1中。
如自表1所知,在半導體晶片附著至實例1至4之覆晶型半導體背面用膜(其中不面向半導體元件之背面的該膜一側上之表面的表面粗糙度(Ra)在50 nm至3 μm範圍內)時,可容易地自裝置保持帶剝離半導體晶片。
儘管本文已參照本發明具體實施例詳細闡述了本發明,但熟習此項技術者應瞭解,可在不背離本發明範疇之前提下對其實施多種改變及修改。
本申請案係基於2010年7月20日提出申請之日本專利申請案第2010-163094號,其全部內容以引用方式併入本文中。
1...半導體背面用切晶帶一體膜
2...半導體背面用膜
3...切晶帶
4...半導體晶圓
5...半導體晶片
6...黏附體
31...基礎材料
32...壓敏黏合層
33...對應於半導體晶圓附著部分之部分
51...形成於半導體晶片5之電路表面側上之凸塊
61...附著至黏附體6之連接墊之結合用導電材料
圖1係顯示本發明之半導體背面用切晶帶一體膜之一個實施例之截面示意圖;及
圖2A至2D係顯示用於使用本發明之半導體背面用切晶帶一體膜來製造半導體裝置之製程之一個實施例的截面示意圖。
1...半導體背面用切晶帶一體膜
2...半導體背面用膜
3...切晶帶
31...基礎材料
32...壓敏黏合層
33...對應於半導體晶圓附著部分之部分
Claims (4)
- 一種覆晶型半導體背面用膜,其特徵在於其係用以形成在覆晶連接至黏附體之半導體元件的背面者,其中該覆晶型半導體背面用膜形成在半導體元件之背面時不面向半導體元件之背面側之表面粗糙度(Ra),在固化之前為50nm至3μm範圍內。
- 如請求項1之覆晶型半導體背面用膜,其中該覆晶型半導體背面用膜之厚度為2μm至200μm範圍內。
- 如請求項1或2之覆晶型半導體背面用膜,其中該半導體元件之厚度為20μm至300μm範圍內。
- 一種切晶帶一體型半導體背面用膜,其係於切晶帶上層壓有如請求項1~3中任一者之覆晶型半導體背面用膜者,其中該切晶帶之結構係於基材上積層有黏著劑層,該覆晶型半導體背面用膜係積層於該黏著層上。
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JP6216180B2 (ja) * | 2013-08-01 | 2017-10-18 | 日東電工株式会社 | 封止用シート、及び、当該封止用シートを用いた半導体装置の製造方法 |
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JP6876614B2 (ja) * | 2015-11-04 | 2021-05-26 | リンテック株式会社 | 半導体装置の製造方法および保護膜形成用シート |
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CN108891365B (zh) * | 2018-06-22 | 2020-05-01 | 浙江航芯科技有限公司 | 汽车用智能座舱系统及使用该系统的汽车 |
JP7478524B2 (ja) * | 2019-09-05 | 2024-05-07 | リンテック株式会社 | 保護膜形成用フィルム、保護膜形成用複合シート、及び保護膜付きワーク加工物の製造方法 |
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CN1368092A (zh) * | 2001-02-05 | 2002-09-11 | 杨孟君 | 纳米麻黄止嗽制剂药物及其制备方法 |
JP2004063551A (ja) | 2002-07-25 | 2004-02-26 | Hitachi Chem Co Ltd | 半導体素子表面保護用フィルム及び半導体素子ユニット |
DE10235482B3 (de) | 2002-08-02 | 2004-01-22 | Süss Microtec Lithography Gmbh | Vorrichtung zum Fixieren dünner und flexibler Substrate |
JP4341343B2 (ja) | 2002-10-04 | 2009-10-07 | 日立化成工業株式会社 | 表面保護フィルム及びその製造方法 |
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JP2004221169A (ja) | 2003-01-10 | 2004-08-05 | Hitachi Chem Co Ltd | 半導体素子保護材、及び半導体装置 |
JP4642436B2 (ja) * | 2004-11-12 | 2011-03-02 | リンテック株式会社 | マーキング方法および保護膜形成兼ダイシング用シート |
JP4865312B2 (ja) | 2005-12-05 | 2012-02-01 | 古河電気工業株式会社 | チップ用保護膜形成用シート |
JP4954569B2 (ja) * | 2006-02-16 | 2012-06-20 | 日東電工株式会社 | 半導体装置の製造方法 |
JP2007250970A (ja) | 2006-03-17 | 2007-09-27 | Hitachi Chem Co Ltd | 半導体素子裏面保護用フィルム及びそれを用いた半導体装置とその製造法 |
JP4846406B2 (ja) | 2006-03-28 | 2011-12-28 | リンテック株式会社 | チップ用保護膜形成用シート |
JP4769975B2 (ja) * | 2006-03-29 | 2011-09-07 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置の製造方法 |
JP2008006386A (ja) | 2006-06-29 | 2008-01-17 | Furukawa Electric Co Ltd:The | チップ用保護膜形成用シートによる保護膜形成方法。 |
JP5286084B2 (ja) * | 2006-07-19 | 2013-09-11 | 積水化学工業株式会社 | ダイシング・ダイボンディングテープ及び半導体チップの製造方法 |
JP2008166451A (ja) | 2006-12-27 | 2008-07-17 | Furukawa Electric Co Ltd:The | チップ保護用フィルム |
JP4732472B2 (ja) * | 2007-03-01 | 2011-07-27 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム |
JP5144433B2 (ja) * | 2008-08-28 | 2013-02-13 | 古河電気工業株式会社 | チップ保護用フィルム |
JP4810565B2 (ja) * | 2008-11-26 | 2011-11-09 | 日東電工株式会社 | ダイシング・ダイボンドフィルム及び半導体装置の製造方法 |
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CN106057722A (zh) | 2016-10-26 |
KR20150123762A (ko) | 2015-11-04 |
CN106057722B (zh) | 2019-03-08 |
CN107887320A (zh) | 2018-04-06 |
CN102376614A (zh) | 2012-03-14 |
US20120021174A1 (en) | 2012-01-26 |
JP5048815B2 (ja) | 2012-10-17 |
JP2012028404A (ja) | 2012-02-09 |
KR20120010124A (ko) | 2012-02-02 |
TW201205660A (en) | 2012-02-01 |
KR20150010801A (ko) | 2015-01-28 |
KR101607803B1 (ko) | 2016-03-30 |
KR101555733B1 (ko) | 2015-09-25 |
KR101640349B1 (ko) | 2016-07-15 |
CN102376614B (zh) | 2019-04-16 |
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