TWI713650B - 熱硬化性接著片、及半導體裝置之製造方法 - Google Patents

熱硬化性接著片、及半導體裝置之製造方法 Download PDF

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TWI713650B
TWI713650B TW105141139A TW105141139A TWI713650B TW I713650 B TWI713650 B TW I713650B TW 105141139 A TW105141139 A TW 105141139A TW 105141139 A TW105141139 A TW 105141139A TW I713650 B TWI713650 B TW I713650B
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resin component
mass
thermosetting adhesive
parts
adhesive sheet
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TW201735147A (zh
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森大地
石松朋之
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日商迪睿合股份有限公司
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Abstract

本發明提供一種可減少半導體晶圓之翹曲並且減少缺角(chipping)之發生的熱硬化性接著片、及半導體裝置之製造方法。於進行切晶前將下述之熱硬化性接著片貼合於半導體晶圓之研磨面並使之硬化，其中，該熱硬化性接著片具有由含有樹脂成分及填料之樹脂組成物形成之熱硬化性接著層，該樹脂成分含有環氧化合物、與硬化劑；並且，環氧化合物之環氧當量的倒數乘以樹脂成分中之環氧化合物的含有率所得之值的總和為1.15E-04以上，填料之摻合量相對於樹脂成分100質量份為50質量份以上。

Description

熱硬化性接著片、及半導體裝置之製造方法
本發明係關於一種為了防止切晶步驟時之龜裂而補強半導體晶圓之熱硬化性接著片、及半導體裝置之製造方法。
於半導體晶片之製造步驟中，切晶(個別化)步驟對半導體晶圓賦予極大之應力。因此，存在於半導體晶圓產生稱為缺角(chipping)之龜裂而不良率變高之情形。
為了將此種問題防患於未然而提出於即將進行切晶步驟前(背面研磨(backgrind)後)貼合補強半導體晶圓之熱硬化性接著片(例如，參照專利文獻1)。
然而，伴隨半導體晶圓之薄型化而半導體晶圓之翹曲量變大，故而存在切晶帶之貼合變困難之情形。
[專利文獻1]日本特開2002-280329號公報
本發明係鑒於此種以往之實際情況而提出者，提供一種可減 少半導體晶圓之翹曲並且減少缺角之發生的熱硬化性接著片、及半導體裝置之製造方法。
為了解決上述課題，本發明之一種熱硬化性接著片具有由含有樹脂成分及填料之樹脂組成物形成之熱硬化性接著層，該樹脂成分含有環氧化合物、與硬化劑；上述環氧化合物之環氧當量的倒數乘以上述樹脂成分中之環氧化合物的含有率所得之值的總和為1.15E-04以上，上述填料之摻合量相對於樹脂成分100質量份為50質量份以上。
又，本發明之半導體裝置之製造方法具有以下步驟：研磨步驟，係對半導體晶圓進行研磨；硬化步驟，係將熱硬化性接著片貼合於上述半導體晶圓之研磨面並使之硬化，而減少上述半導體晶圓之翹曲量；切晶步驟，係將切晶帶貼合於上述半導體晶圓之熱硬化性接著片之面，並進行切晶；上述熱硬化性接著片具有由含有樹脂成分及填料之樹脂組成物形成之熱硬化性接著層，該樹脂成分含有環氧化合物、與硬化劑；上述環氧化合物之環氧當量的倒數乘以上述樹脂成分中之環氧化合物的含有率所得之值的總和為1.15E-04以上，上述填料之摻合量相對於樹脂成分100質量份為50質量份以上。
根據本發明，藉由將熱硬化性接著片貼合於半導體晶圓之研磨面並使之硬化，熱硬化性接著片會收縮，可使半導體晶圓之翹曲減少。因此可於使晶圓呈平坦之狀態切晶，使缺角減少，從而獲得高品質之半導體裝置。
11‧‧‧基材膜層
12‧‧‧熱硬化性接著層
21‧‧‧晶圓
22‧‧‧突起電極
30‧‧‧保護帶
31‧‧‧熱塑性樹脂層
32‧‧‧基材膜層
圖1係表示熱硬化性接著片之概略之剖面圖。
圖2係表示BG帶貼附步驟之概略之剖面圖。
圖3係表示研磨步驟之概略之剖面圖。
圖4係表示熱硬化性接著片貼附步驟之概略之剖面圖。
圖5係表示BG帶剝離步驟之概略之剖面圖。
圖6係表示硬化步驟之概略之剖面圖。
圖7係表示DC帶貼附步驟之概略之剖面圖。
圖8係表示切晶處理步驟之概略之剖面圖。
圖9係表示延伸步驟之概略之剖面圖。
圖10係表示拾取步驟之概略之剖面圖。
圖11係表示構裝步驟之概略之剖面圖。
以下，按照下述順序詳細地對本發明之實施形態進行說明。
1.熱硬化性接著片
2.半導體裝置之製造方法
3.實施例
<1.熱硬化性接著片>
本實施形態之熱硬化性接著片具有：於對半導體晶圓進行切晶時貼合 至半導體晶圓之研磨面之熱硬化性接著層，該熱硬化性接著片係於切晶步驟時補強晶圓以防止稱為缺角之龜裂的補強片。
圖1係表示熱硬化性接著片之概略之剖面圖。如圖1所示，熱硬化性接著片積層有基材膜層11、與熱硬化性接著層12。
作為基材膜層11，可使用聚對苯二甲酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜；或由紙、布、不織布等所構成之多孔質基材。
熱硬化性接著層12係由含有樹脂成分及填料的樹脂組成物形成，該樹脂成分含有：環氧化合物、與硬化劑。
作為環氧化合物，例如可列舉：四(縮水甘油氧基苯基)乙烷、四(縮水甘油氧基甲基苯基)乙烷、四(縮水甘油氧基苯基)甲烷、三(縮水甘油氧基苯基)乙烷、三(縮水甘油氧基苯基)甲烷等縮水甘油醚型環氧樹脂、二環戊二烯型環氧樹脂、縮水甘油胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、螺環型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、萜烯型環氧樹脂、四溴雙酚A型環氧樹脂、甲酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、α-萘酚酚醛清漆型環氧樹脂、溴化苯酚酚醛清漆型環氧樹脂等。該等環氧樹脂可單獨使用1種，亦可組合2種類以上使用。作為可於市場獲取之環氧化合物的具體例，可列舉：三菱化學(股份)之商品名「JER1009」(雙酚A型環氧樹脂、環氧當量2850)、商品名「JER1031S」(四苯酚乙烷(tetraphenylolethane)型環氧樹脂、環氧當量200)、商品名「JERYL980」(液狀雙酚A型環氧樹脂、環氧當量185)等。
本實施型態中，環氧化合物之環氧當量的倒數乘以樹脂成分 中之環氧化合物的含有率所得之值的總和，即每樹脂成分100質量份之環氧基的莫耳數為1.15E-04以上，較佳為1.20E-04以上且2.00E-03以下。藉由每樹脂成分100質量份之環氧基的莫耳數為1.15E-04以上，熱硬化性接著層會大幅收縮，可減低半導體晶圓之翹曲。
再者，每樹脂成分100質量份之環氧基的莫耳數係以下述式(1)算出者。
環氧基之莫耳數=環氧當量之倒數×樹脂成分中之含有率…(1)
此處，環氧當量是藉由以JIS K7236：2001規格化之方法所測得的含有1當量之環氧基的樹脂之質量(g/eq)。
作為硬化劑，可使用咪唑類、多元酚類、酸酐類、胺類、醯肼類、聚硫醇類、路易斯酸-胺錯合物類、潛伏性硬化劑等。該等中，較佳使用保存穩定性與硬化物之耐熱性優異的潛伏性硬化劑。作為潛伏性硬化劑可列舉氰胍型潛伏性硬化劑、胺加成物(amine adduct)型潛伏性硬化劑、有機酸醯肼型潛伏性硬化劑、芳香族鋶鹽型潛伏性硬化劑、微膠囊型潛伏性硬化劑、光硬化型潛伏性硬化劑等。該等中可使用保存穩定性優異之微膠囊型潛伏性硬化劑。作為微膠囊型潛伏性硬化劑，可列舉藉由乙烯化合物、脲化合物、熱塑性樹脂將上述各硬化促進劑膠囊化而成者。作為可於市場獲取之微膠囊型潛伏性硬化劑的具體例，可列舉旭化成chemicals(股份)之商品名「NovacureHX-3941HP」(藉由異氰酸酯處理胺加成物型潛伏性硬化劑而成之微膠囊型潛伏性硬化劑)等。
又，熱硬化性接著層12亦可含有彈性體、苯氧樹脂等、作 為膜形成樹脂之聚合物來作為樹脂成分。作為彈向體例如可列舉：丙烯酸系彈性體、丁二烯系彈性體、乙烯系彈性體、丙烯系彈性體、苯乙烯系彈性體等，可使用該等之1種或2種以上。該等中，較佳為使用透明性優異之丙烯酸系彈性體。作為可於市場得到之丙烯酸系彈性體的具體例，可列舉Nagase ChemteX(股份)之商品名「SG-P3」等。又，作為苯氧樹脂，例如可列舉茀型苯氧樹脂、雙酚型苯氧樹脂、酚醛清漆型苯氧樹脂、萘型苯氧樹脂、聯苯型苯氧樹脂等，可使用該等之1種或2種以上。
又，聚合物之重量平均分子量(Mw)較佳為5000以上且150000以下，更佳為10000以上且80000以下。若重量平均分子量(Mw)過小則會有片材之特性下降的傾向，若過多則會有與其他成分之相容性變差的傾向。
又，樹脂成分中聚合物之含有率，較佳為未達15wt%，更佳為未達10%。若樹脂成分中聚合物之含有率變高，則會有晶圓之翹曲抑制性下降的傾向。
又，作為樹脂成分，較佳為添加矽烷偶合劑。作為矽烷偶合劑，可使用(甲基)丙烯酸系、環氧系、胺基系、巰基系、硫醚系、脲基系等，但於本實施形態中，可較佳地使用環氧系矽烷偶合劑。藉此，可提高有機材料與無機材料之界面之密合可靠性。
填料可使用無機或有機之任一種，較佳為使用「被用在對準之於紅外線具有透光性」的材料。作為於紅外線具有透光性之材料，例如可列舉氧化矽、矽、鍺、石英、藍寶石等，可使用該等之1種或2種以上。該等中，就雷射標記之辨認性觀點而言，較佳為使用氧化矽。
又，填料之摻合量相對於樹脂成分100質量份為50質量份以上，較佳為50質量份以上且100質量份以下。若填料之含量過少，則有降低晶圓之翹曲量的效果下降之傾向，若過多則有密合可靠度下降之傾向。
又，較佳為添加黑色顏料等之著色劑作為其他之填料，著色劑會使雷射標記部分與其他部分產生對比差，使雷射標記視認性提高。作為此種著色劑，例如可列舉：碳黑、鈦黑、氧化鈦、氧化鐵等，可使用該等之1種或2種以上。該等中，就提高對比度差之觀點而言，較佳為使用碳黑。
又，熱硬化性接著片之波長1000nm中之穿透率較佳為30%以上。若此紅外線穿透率過低，則難以進行利用紅外線之對準。
根據此種熱硬化性接著片，藉由貼合至半導體晶圓之研磨面並使其硬化，熱硬化性接著片收縮，可減少半導體晶圓之翹曲量。因此，可於平坦化晶圓之狀態進行切晶，故而減少缺角，從而獲得高品質之半導體裝置。
<2.半導體裝置之製造方法>
其次，對使用有上述熱硬化性接著片之半導體裝置之製造方法進行說明。本實施形態之半導體裝置之製造方法具有以下步驟：研磨步驟，係對半導體晶圓進行研磨；減少半導體晶圓之翹曲量之步驟：係將熱硬化性接著片貼合在半導體晶圓之研磨面並使之硬化，而使半導體晶圓之翹曲量減少；切晶步驟：將切晶帶貼合在半導體晶圓之熱硬化性接著片之面並進行切晶。由於可使半導體晶圓之翹曲減少，於平坦化晶圓之狀態進行切晶，因此可減少缺角，而獲得高品質之半導體裝置。
以下，對具體之半導體裝置之製造方法進行說明。以具體例之形式表示之半導體裝置之製造方法具有下述步驟：貼附具有接著劑層之保護帶之保護帶貼附步驟(A)、研磨步驟(B)、熱硬化性樹脂片貼附步驟(C)、保護帶剝離步驟(D)、硬化步驟(E)、黏著帶貼附步驟(F)、切晶處理步驟(G)、延伸步驟(H)、拾取步驟(I)、及構裝步驟(J)。再者，保護帶剝離步驟(D)亦可於熱硬化性樹脂片貼附步驟(C)前進行。
〔(A)保護帶貼附步驟〕
圖2係表示保護帶貼附步驟之概略之剖面圖。於保護帶貼附步驟中，於形成有突起電極22之晶圓21面貼附保護帶30。關於貼附保護帶30之貼附溫度，就減少空隙、提高晶圓密合性及防止晶圓研削後之翹曲之觀點而言，為25℃以上且100℃以下，較佳為40℃以上且80℃以下。
晶圓21具有形成於矽等半導體表面之積體電路、與稱為凸塊之連接用突起電極22。晶圓21之厚度並無特別限定，較佳為200μm以上且1000μm以下。
作為突起電極22，並無特別限定，例如可列舉：由焊料形成之低熔點凸塊或高熔點凸塊、錫凸塊、銀-錫凸塊、銀-錫-銅凸塊、金凸塊、銅凸塊等。又，突起電極22之高度並無特別限制，較佳為10μm以上且200μm以下。
保護帶30係稱為背面研磨帶(Back Grind Tape)者，且係於之後之研磨處理步驟(B)中保護晶圓免受劃傷、破裂、污染等者。如圖2所示，保護帶30積層有熱塑性樹脂層31與基材膜層32，並以突起電極22之形成面與熱塑性樹脂層31相接之狀態進行貼合，突起電極22被埋入熱塑 性樹脂層31。
作為熱塑性樹脂層31，可列舉：乙烯乙酸乙烯酯共聚物(EVA：Ethylene Vinyl Acetate)、聚乙烯、聚丙烯、聚醯胺、聚縮醛、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、氟樹脂、聚苯硫醚、聚苯乙烯、ABS樹脂、丙烯酸系樹脂、聚碳酸酯、聚胺酯(polyurethane)、聚氯乙烯、聚苯醚等，該等可單獨使用1種，亦可併用2種以上。
作為基材膜層32，可使用聚對苯二甲酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜；或由紙、布、不織布等所構成之多孔質基材。
再者，保護帶30並不限定於上述構成，亦可於各層之表面或鄰接之層間形成其他層。
〔(B)研磨步驟〕
圖3係表示研磨步驟之概略之剖面圖。於研磨步驟中，對保護帶30貼附面之相反面進行研磨處理。將貼附有保護帶30之晶圓21之相反面固定至研削裝置而進行研磨。於該研磨步驟中，藉由研磨而晶圓21之厚度為200μm以下，進而為50μm以下。晶圓21之厚度越小，則晶圓21之翹曲量越大。再者，晶圓21之翹曲量係於平面平台(X、Y軸)上放置晶圓21時之翹曲(Z軸)之最大值。
〔(C)熱硬化性接著片貼附步驟〕
圖4係表示熱硬化性接著片貼附步驟之概略之剖面圖。於熱硬化性接著片貼附步驟中，於晶圓21之研磨處理面貼附熱硬化性接著片之熱硬化性接著層12。
〔(D)保護帶剝離步驟〕
圖5係表示保護帶剝離步驟之概略之剖面圖。於保護帶剝離步驟中，剝離保護帶30。
〔(E)硬化步驟〕
圖6係表示硬化步驟之概略之剖面圖。於硬化步驟中，使熱硬化性接著層12硬化。作為硬化方法及硬化條件，可使用使熱硬化型接著劑硬化之公知之方法。於硬化步驟中，例如可藉由在80~200℃之溫度固化0.1~5小時之時間而使熱硬化性接著層12硬化。藉此，熱硬化性接著層12大幅收縮，而產生與晶圓21之翹曲反方向之應力，故而可將晶圓21維持為平坦之狀態。
〔(F)黏著帶貼附步驟〕
圖7係表示黏著帶貼附步驟之概略之剖面圖。於黏著帶貼附步驟中，於研磨處理面貼附黏著帶40。黏著帶40係稱為切晶帶(Dicing Tape)者，且係用以於切晶步驟(G)中保護、固定晶圓21並保持至拾取步驟(I)為止之帶。
作為黏著帶40，並無特別限定，可使用公知者。通常，黏著帶40具有黏著劑層、及基材膜層。作為黏著劑層，例如可列舉聚乙烯系、丙烯酸系、橡膠系、胺酯系等黏著劑。又，作為基材膜層，可使用聚對苯二甲酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜；或由紙、布、不織布等所構成之多孔質基材。又，作為黏著帶之貼附裝置及條件，並無特別限定，可使用公知之裝置及條件。
〔(G)切晶處理步驟〕
圖8係表示切晶處理步驟之概略之剖面圖。於切晶處理步驟中，對貼附有黏著帶40之晶圓21進行切晶處理而獲得單片之半導體晶片。作為切晶 方法，並無特別限定，例如可使用利用切晶鋸切削晶圓21而切出等公知之方法。由於熱硬化性接著片使晶圓之翹曲減少，因此可於平坦化晶圓之狀態進行切晶，可減少缺角。
〔(H)延伸步驟〕
圖9係表示延伸步驟之概略之剖面圖。於延伸步驟中，例如使貼合有經分割之多個半導體晶片之黏著帶40沿放射方向伸長，而擴大各半導體晶片之間隔。
〔(I)拾取步驟〕
圖10係表示拾取步驟之概略之剖面圖。於拾取步驟中，自黏著帶40之下表面頂出貼合固定於黏著帶40上之半導體晶片而將其剝離，利用吸嘴吸附該經剝離之半導體晶片。被拾取之半導體晶片係被收納至晶片托盤、或被搬送至倒裝晶片接合機之晶片搭載嘴。
〔(J)構裝步驟〕
圖11係表示構裝步驟之概略之剖面圖。於構裝步驟中，例如使用NCF(Non Conductive Film)等電路連接材料將半導體晶片與電路基板進行連接。作為電路基板，並無特別限定，可使用聚醯亞胺基板、玻璃環氧基板等塑膠基板、陶瓷基板等。又，作為連接方法，可使用利用加熱接合機、回焊爐等之公知之方法。
根據此種半導體裝置之製造方法，將熱硬化性接著片貼合至半導體晶圓之研磨面並使其硬化而減少半導體晶圓之翹曲量，故而可抑制缺角而容易地進行切晶。
[實施例]
<3.實施例>
以下，對本發明之實施例進行說明。本實施例中，製作熱硬化性接著片，將其貼合在已發生翹曲的附有圖案之晶圓上，製作積層體。並且，評價熱硬化性接著片之薄膜之膜性、切晶時之缺角抑制、及晶圓之翹曲控制性。
[熱硬化性接著片之製作]
摻合下述成分而製備樹脂組成物。使用棒式塗佈機將其塗佈至經剝離處理之PET(Polyethylene terephthalate)，於80℃之烘箱中乾燥3分鐘而製作具有厚度20μm之熱硬化性接著層的熱硬化性接著片(罩蓋剝離PET(25μm)/熱硬化性接著層(20μm)/基底剝離PET(50μm))。
JER1009：雙酚A型環氧樹脂(三菱化學(股份)，環氧當量2850)
JER1031S：四羥苯基(phenylol)乙烷型環氧樹脂(三菱化學(股份)，環氧當量2000)
JERYL980：液狀雙酚A型環氧樹脂(三菱化學(股份)，環氧當量185)
NovacureHX-3941HP：藉由異氰酸酯處理胺加成物型潛伏性硬化劑而成之微膠囊型潛伏性硬化劑(ASAHI KASEI E-materials(股份))
A-187：環氧系矽烷偶合劑(Momentive Performance Materials Japan有限責任公司)
SG-P3：彈性體(長瀨化成(股份)製造)
Aerosil R202：二氧化矽(日本Aerosil(股份))
#3050B：碳黑(三菱化學(股份))
[積層體之製作]
藉由加壓機將厚度為20μm之熱硬化性接著層貼合至附有圖案之晶圓上，於130℃、1h之條件下進行固化而獲得積層體。
附有圖案之晶圓係使用厚度為200μm之8英吋者。又，附有圖案之晶圓之平均翹曲量(樣品數量：10)為4mm。再者，附有圖案之晶圓之翹曲量係設為於平面平台(X、Y軸)上放置附有圖案之晶圓時的翹曲(Z軸)之最大值。
[薄膜之膜性之評價]
對熱硬化性接著片之薄膜性、黏附性及層疊性評價，當全部之評價為良好之情形評價為「A」，當薄膜性為良好、黏附性或層疊性中任一者之評價為不良之情形評價為「B」，將該等以外之情形評價為「C」。
[切晶時之缺角抑制之評價]
於積層體之熱硬化性接著層側層疊切晶晶片，觀察切晶後之積層體。當由缺角導致之不良率未達5%之情形評價為「A」，當不良率為5%以上之情形評價為「B」。
[晶圓之翹曲控制性之評價]
與附有圖案之翹曲量的測定同樣地，積層體之翹曲量係設為於平面平台(X、Y軸)上放置積層體時之翹曲(Z軸)之最大值。將積層體之翹曲量未達1.0mm者評價為「A」，將積層體之翹曲量為1.0mm以上且未達1.5mm者評價為「B」，將積層體之翹曲量為1.5mm以上且未達2.5mm者評價為「C」，將積層體之翹曲量為2.5mm以上者評價為「D」。
<實施例1>
如表1所示般，向樹脂成分100質量份添加二氧化矽(Aerosil R202) 80質量份而製備樹脂組成物，其中，樹脂成分係摻合固形環氧化合物(JER1009)39質量份、硬化劑(HX-3941HP)60質量份、偶合劑(A-187)1質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為1.368E-04，相對於樹脂成分100質量份之填料摻合量為80質量份。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為A，切晶時之缺角抑制之評價為B，薄晶圓翹曲抑制性之評價為B。
<實施例2>
如表1所示般，向樹脂成分100質量份添加二氧化矽(Aerosil R202)80質量份、碳黑2質量份而製備樹脂組成物，其中，樹脂成分係摻合固形環氧化合物(JER1009)38質量份、硬化劑(HX-3941HP)59質量份、偶合劑(A-187)1質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為1.361E-04，相對於樹脂成分100質量份之填料摻合量為82質量份。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為A，切晶時之缺角抑制之評價為B，薄晶圓翹曲抑制性之評價為B。
<實施例3>
如表1所示般，向樹脂成分100質量份添加二氧化矽(Aerosil R202)80質量份而製備樹脂組成物，其中，樹脂成分係摻合多官能固形環氧化合物(JER1031S)32質量份、硬化劑(HX-3941HP)67質量份、偶合劑(A-187)1質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為1.600E-03，相對於樹脂成分100質量份之填料摻合量為80質量份。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為A，切晶時之缺角抑制之評價為B，薄晶圓翹曲抑制性之評價為A。
<實施例4>
如表1所示般，向樹脂成分100質量份添加二氧化矽(Aerosil R202)80質量份而製備樹脂組成物，其中，樹脂成分係摻合多官能固形環氧化合物(JER1009)35質量份、多官能液狀環氧化合物4質量份、硬化劑(HX-3941HP)60質量份、偶合劑(A-187)1質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為3.390E-04，相對於樹脂成分100質量份之填料摻合量為80質量份。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為B，切晶時之缺角抑制之評價為A，薄晶圓翹曲抑制性之評價為A。
<實施例5>
如表1所示般，向樹脂成分90質量份添加二氧化矽(Aerosil R202)50質量份而製備樹脂組成物，其中，樹脂成分係摻合多官能固形環氧化合物(JER1009)34質量份、硬化劑(HX-3941HP)55質量份、偶合劑(A-187)1質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為1.326E-04，相對於樹脂成分100質量份之填料摻合量為56質量份。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為A，切晶時之缺角抑制之評價為A，薄晶圓翹曲抑制性之評價為A。
<實施例6>
如表1所示般，向樹脂成分95質量份添加二氧化矽(Aerosil R202)80質量份而製備樹脂組成物，其中，樹脂成分係摻合多官能固形環氧化合物(JER1009)34質量份、硬化劑(HX-3941HP)55質量份、偶合劑(A-187)1質量份、彈性體5質量份而成者。相對於每樹脂成分100質量份之 環氧基的莫耳數為1.256E-04，相對於樹脂成分100質量份之填料摻合量為84質量份。又，樹脂成分中之彈性體的含量為5wt%。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為A，切晶時之缺角抑制之評價為A，薄晶圓翹曲抑制性之評價為A。
<實施例7>
如表1所示般，向樹脂成分100質量份添加二氧化矽(Aerosil R202)80質量份而製備樹脂組成物，其中，樹脂成分係摻合多官能固形環氧化合物(JER1009)34質量份、硬化劑(HX-3941HP)55質量份、偶合劑(A-187)1質量份、彈性體10質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為1.193E-04，相對於樹脂成分100質量份之填料摻合量為80質量份。又，樹脂成分中之彈性體的含量為10wt%。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為A，切晶時之缺角抑制之評價為A，薄晶圓翹曲抑制性之評價為B。
<比較例1>
如表1所示般，向樹脂成分100質量份添加二氧化矽(Aerosil R202)30質量份而製備樹脂組成物，其中，樹脂成分係摻合多官能固形環氧化合物(JER1009)34質量份、硬化劑(HX-3941HP)55質量份、偶合劑(A-187)1質量份、彈性體10質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為1.193E-04，相對於樹脂成分100質量份之填料摻合量為80質量份。又，樹脂成分中之彈性體的含量為10wt%。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為B，切晶時之缺角抑制之評價為B，薄晶圓翹曲抑制性之評價為C。
<比較例2>
如表1所示般，向樹脂成分105質量份添加二氧化矽(Aerosil R202)30質量份而製備樹脂組成物，其中，樹脂成分係摻合多官能固形環氧化合物(JER1009)34質量份、硬化劑(HX-3941HP)55質量份、偶合劑(A-187)1質量份、彈性體15質量份而成者。相對於每樹脂成分100質量份之環氧基的莫耳數為1.136E-04，相對於樹脂成分100質量份之填料摻合量為76質量份。又，樹脂成分中之彈性體的含量為15wt%。使用此樹脂組成物而製成之熱硬化性接著片之薄膜之膜性的評價為A，切晶時之缺角抑制之評價為B，薄晶圓翹曲抑制性之評價為C。
Figure 105141139-A0202-12-0018-1
於比較例1般填料之摻合量過少之情形時，熱硬化性接著片之收縮較小，無法大幅減低晶圓之翹曲量。又，於比較例2般彈性體之摻合量過多，並且每樹脂成分100質量份之環氧基之莫耳數未達1.15E-04之情形時，熱硬化性接著片之收縮亦較小，無法大幅減低晶圓之翹曲量。
另一方面，如實施例1~7，每樹脂成分100質量份之環氧基之莫耳數為1.15E-04以上，填料之摻合量相對於樹脂成分100質量份為50質量份以上，藉此熱硬化性接著片之收縮變大，可大幅減低晶圓之翹曲量。藉此，由於可在使晶圓平坦的狀態切晶，故而可大幅降低缺角的產生。又，根據實施例6、實施例7及比較例2，可知當樹脂成分中之彈性體的含有率變高，則晶圓之翹曲抑制性會下降。
11‧‧‧基材膜層
12‧‧‧熱硬化性接著層

Claims (7)

  1. 一種熱硬化性接著片，其具有由含有樹脂成分及填料之樹脂組成物形成之熱硬化性接著層，該樹脂成分含有環氧化合物及硬化劑，上述環氧化合物之環氧當量的倒數乘以上述樹脂成分中之環氧化合物的含有率所得之值的總和為1.15E-04以上，上述填料之摻合量相對於樹脂成分100質量份為50質量份以上，上述樹脂成分進而含有聚合物，且上述樹脂成分中之聚合物的含有率未達15wt%。
  2. 如申請專利範圍第1項之熱硬化性接著片，其中，上述樹脂成分中之聚合物的含有率未達10wt%。
  3. 如申請專利範圍第1或2項之熱硬化性接著片，其中，上述填料之摻合量相對於樹脂成分100質量份，為50質量份以上且100質量份以下。
  4. 如申請專利範圍第1或2項之熱硬化性接著片，其中，上述填料包含黑色顏料。
  5. 如申請專利範圍第3項之熱硬化性接著片，其中，上述填料包含黑色顏料。
  6. 一種半導體裝置之製造方法，其具有以下步驟：研磨步驟，係對半導體晶圓進行研磨；熱硬化性接著片貼附步驟，係將熱硬化性接著片貼附於上述半導體晶圓之研磨面；硬化步驟，係使上述熱硬化性片硬化而減少上述半導體晶圓之翹曲量； 切晶帶貼附步驟，係於上述半導體晶圓之熱硬化性接著片之面貼附切晶帶；及切晶處理步驟，係對貼附有切晶帶之晶圓進行切晶處理而獲得單片之半導體晶片；上述熱硬化性接著片具有由含有樹脂成分及填料之樹脂組成物形成之熱硬化性接著層，該樹脂成分含有環氧化合物及硬化劑，上述環氧化合物之環氧當量的倒數乘以上述樹脂成分中之環氧化合物的含有率所得之值的總和為1.15E-04以上，上述填料之摻合量相對於樹脂成分100質量份為50質量份以上。
  7. 如申請專利範圍第6項之半導體裝置之製造方法，其中，於上述研磨步驟中進行研磨直至厚度成為200μm以下。
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