KR102484974B1 - 다이렉트 이미징 노광 장치 및 다이렉트 이미징 노광 방법 - Google Patents

다이렉트 이미징 노광 장치 및 다이렉트 이미징 노광 방법 Download PDF

Info

Publication number
KR102484974B1
KR102484974B1 KR1020197013706A KR20197013706A KR102484974B1 KR 102484974 B1 KR102484974 B1 KR 102484974B1 KR 1020197013706 A KR1020197013706 A KR 1020197013706A KR 20197013706 A KR20197013706 A KR 20197013706A KR 102484974 B1 KR102484974 B1 KR 102484974B1
Authority
KR
South Korea
Prior art keywords
exposure
pixel
pattern
point
spatial light
Prior art date
Application number
KR1020197013706A
Other languages
English (en)
Korean (ko)
Other versions
KR20190072573A (ko
Inventor
쇼지 스즈키
Original Assignee
가부시키가이샤 아도텟쿠 엔지니아린구
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 아도텟쿠 엔지니아린구 filed Critical 가부시키가이샤 아도텟쿠 엔지니아린구
Publication of KR20190072573A publication Critical patent/KR20190072573A/ko
Application granted granted Critical
Publication of KR102484974B1 publication Critical patent/KR102484974B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
KR1020197013706A 2016-11-14 2017-11-13 다이렉트 이미징 노광 장치 및 다이렉트 이미징 노광 방법 KR102484974B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016221962A JP7023601B2 (ja) 2016-11-14 2016-11-14 ダイレクトイメージング露光装置及びダイレクトイメージング露光方法
JPJP-P-2016-221962 2016-11-14
PCT/JP2017/040719 WO2018088550A1 (ja) 2016-11-14 2017-11-13 ダイレクトイメージング露光装置及びダイレクトイメージング露光方法

Publications (2)

Publication Number Publication Date
KR20190072573A KR20190072573A (ko) 2019-06-25
KR102484974B1 true KR102484974B1 (ko) 2023-01-05

Family

ID=62109324

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197013706A KR102484974B1 (ko) 2016-11-14 2017-11-13 다이렉트 이미징 노광 장치 및 다이렉트 이미징 노광 방법

Country Status (4)

Country Link
JP (1) JP7023601B2 (zh)
KR (1) KR102484974B1 (zh)
CN (1) CN110325918B (zh)
WO (1) WO2018088550A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10495979B1 (en) * 2019-02-19 2019-12-03 Applied Materials, Inc. Half tone scheme for maskless lithography
JP7196011B2 (ja) * 2019-04-26 2022-12-26 株式会社アドテックエンジニアリング 直描式露光装置
JP7293032B2 (ja) * 2019-08-08 2023-06-19 株式会社エスケーエレクトロニクス 露光方法及び露光装置
JP7431532B2 (ja) 2019-08-21 2024-02-15 株式会社Ｓｃｒｅｅｎホールディングス 描画方法、および、描画装置
JP7432418B2 (ja) * 2020-03-26 2024-02-16 株式会社オーク製作所 露光装置および露光方法
CN113840093B (zh) * 2020-06-24 2023-07-25 北京小米移动软件有限公司 图像生成方法及装置
KR20240012549A (ko) 2021-07-05 2024-01-29 가부시키가이샤 니콘 패턴 노광 장치, 디바이스 제조 방법, 및 노광 장치
CN113379651B (zh) * 2021-08-11 2021-11-19 深圳市先地图像科技有限公司 一种激光成像过程中的图像处理方法、系统及相关设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123234A (ja) 2003-10-14 2005-05-12 Tadahiro Omi パターン描画方法、及びパターン描画装置
US20050129397A1 (en) * 2002-06-07 2005-06-16 Fuji Photo Film Co., Ltd. Exposure device
JP2005203697A (ja) * 2004-01-19 2005-07-28 Fuji Photo Film Co Ltd マルチビーム露光装置
JP2010156901A (ja) * 2009-01-05 2010-07-15 Dainippon Screen Mfg Co Ltd 露光装置および露光方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
JP2004212471A (ja) * 2002-12-27 2004-07-29 Fuji Photo Film Co Ltd 描画ヘッド、描画装置及び描画方法
US20040239901A1 (en) 2003-05-29 2004-12-02 Asml Holding N.V. System and method for producing gray scaling using multiple spatial light modulators in a maskless lithography system
JP2007503611A (ja) * 2003-08-27 2007-02-22 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 光学像を形成するための方法及び装置
JP2005210112A (ja) * 2003-12-26 2005-08-04 Fuji Photo Film Co Ltd 露光方法および装置
US7230677B2 (en) * 2004-12-22 2007-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing hexagonal image grids
JP2007003861A (ja) * 2005-06-24 2007-01-11 Fujifilm Holdings Corp 露光方法および装置
JP2007041239A (ja) * 2005-08-02 2007-02-15 Fujifilm Corp カラーフィルタの製造方法、及びカラーフィルタ並びに液晶表示装置
JP2008076590A (ja) * 2006-09-20 2008-04-03 Fujifilm Corp 描画位置測定方法および装置
JP2008256730A (ja) * 2007-03-30 2008-10-23 Fujifilm Corp 液晶表示装置用ｔｆｔアレイ基板の製造装置及び製造方法
DE102008017623A1 (de) * 2007-04-05 2008-10-09 Heidelberg Instruments Mikrotechnik Gmbh Verfahren und Vorrichtung zum Abbilden einer programmierbaren Maske auf einem Substrat
JP2009246069A (ja) * 2008-03-31 2009-10-22 Dainippon Screen Mfg Co Ltd パターン描画装置およびパターン描画方法
JP5697188B2 (ja) * 2009-09-15 2015-04-08 国立大学法人東北大学 露光装置および露光方法
US8335999B2 (en) * 2010-06-11 2012-12-18 Orbotech Ltd. System and method for optical shearing
JP2012049433A (ja) * 2010-08-30 2012-03-08 Orc Mfg Co Ltd 露光装置
CN102998914B (zh) * 2012-12-31 2015-01-14 苏州大学 一种直写式光刻加工系统及光刻方法
CN104298080B (zh) * 2014-11-06 2016-08-31 苏州苏大维格光电科技股份有限公司 一种无掩膜激光直写叠加曝光方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050129397A1 (en) * 2002-06-07 2005-06-16 Fuji Photo Film Co., Ltd. Exposure device
JP2005123234A (ja) 2003-10-14 2005-05-12 Tadahiro Omi パターン描画方法、及びパターン描画装置
JP2005203697A (ja) * 2004-01-19 2005-07-28 Fuji Photo Film Co Ltd マルチビーム露光装置
JP2010156901A (ja) * 2009-01-05 2010-07-15 Dainippon Screen Mfg Co Ltd 露光装置および露光方法

Also Published As

Publication number Publication date
CN110325918B (zh) 2021-08-31
WO2018088550A1 (ja) 2018-05-17
KR20190072573A (ko) 2019-06-25
JP2018081153A (ja) 2018-05-24
CN110325918A (zh) 2019-10-11
JP7023601B2 (ja) 2022-02-22

Similar Documents

Publication Publication Date Title
KR102484974B1 (ko) 다이렉트 이미징 노광 장치 및 다이렉트 이미징 노광 방법
US8792081B2 (en) Controller for optical device, exposure method and apparatus, and method for manufacturing device
US5721606A (en) Large-area, high-throughput, high-resolution, scan-and-repeat, projection patterning system employing sub-full mask
CN102103332B (zh) 高速数字扫描直写光刻装置
KR101446485B1 (ko) 묘화 시스템
US7083405B2 (en) Photo-fabrication apparatus
JPH0653105A (ja) 露光装置
KR101446484B1 (ko) 묘화 시스템
CN112567297A (zh) 预备空间光调制器区段以解决场不均匀性
CN201993577U (zh) 高速数字扫描直写光刻装置
US20070127109A1 (en) Seamless exposure with projection system comprises array of micromirrors with predefined reflectivity variations
US7164961B2 (en) Modified photolithography movement system
KR102523757B1 (ko) 라인 파상을 감소시키기 위한 패턴들의 이동
WO2019169733A1 (zh) 一种无掩模光刻系统及其曝光方法
JP2003057836A (ja) 多重露光描画装置および多重露光描画方法
KR20110095571A (ko) 디지털 노광 방법 및 이를 수행하기 위한 디지털 노광 장치
JP7196271B2 (ja) ダイレクトイメージング露光装置及びダイレクトイメージング露光方法
US20180017781A1 (en) Frustrated cube assembly
JP2009521108A (ja) Ｓｌｍ直接描画装置
KR102269979B1 (ko) 묘화 장치, 및 묘화 방법
JP2004128272A (ja) パターン描画装置およびパターン描画方法
WO2022220211A1 (ja) 描画装置および描画方法
JP7128760B2 (ja) 露光装置、露光方法およびプログラム
TW202234475A (zh) 描繪裝置、描繪系統以及描繪方法
KR101140664B1 (ko) 디지털 리소그래피 장치 및 그 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant