KR102433558B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR102433558B1
KR102433558B1 KR1020190083570A KR20190083570A KR102433558B1 KR 102433558 B1 KR102433558 B1 KR 102433558B1 KR 1020190083570 A KR1020190083570 A KR 1020190083570A KR 20190083570 A KR20190083570 A KR 20190083570A KR 102433558 B1 KR102433558 B1 KR 102433558B1
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South Korea
Prior art keywords
substrate
light
processing
chamber
light source
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Korean (ko)
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KR20210008209A (ko
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윤도현
박주집
박진세
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세메스 주식회사
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Priority to KR1020190083570A priority Critical patent/KR102433558B1/ko
Priority to CN202010659864.XA priority patent/CN112216631B/zh
Priority to US16/925,449 priority patent/US11862491B2/en
Priority to JP2020119121A priority patent/JP7280225B2/ja
Publication of KR20210008209A publication Critical patent/KR20210008209A/ko
Priority to KR1020220101053A priority patent/KR102741646B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • H01L21/027—
    • H01L21/6715—
    • H01L21/67742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3222—Loading to or unloading from a conveyor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3406—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door or cover

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020190083570A 2019-07-11 2019-07-11 기판 처리 장치 및 기판 처리 방법 Active KR102433558B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020190083570A KR102433558B1 (ko) 2019-07-11 2019-07-11 기판 처리 장치 및 기판 처리 방법
CN202010659864.XA CN112216631B (zh) 2019-07-11 2020-07-09 用于处理基板的装置和方法
US16/925,449 US11862491B2 (en) 2019-07-11 2020-07-10 Apparatus and method for treating substrate
JP2020119121A JP7280225B2 (ja) 2019-07-11 2020-07-10 基板処理装置及び基板処理方法
KR1020220101053A KR102741646B1 (ko) 2019-07-11 2022-08-12 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190083570A KR102433558B1 (ko) 2019-07-11 2019-07-11 기판 처리 장치 및 기판 처리 방법

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KR20210008209A KR20210008209A (ko) 2021-01-21
KR102433558B1 true KR102433558B1 (ko) 2022-08-19

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KR1020220101053A Active KR102741646B1 (ko) 2019-07-11 2022-08-12 기판 처리 장치 및 기판 처리 방법

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US (1) US11862491B2 (https=)
JP (1) JP7280225B2 (https=)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12550658B2 (en) 2023-01-11 2026-02-10 Semes Co., Ltd. Substrate processing apparatus and substrate processing method

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112327578B (zh) * 2019-08-05 2023-11-21 源卓微纳科技(苏州)股份有限公司 一种直写光刻机的光刻系统
CN111273522A (zh) * 2020-04-11 2020-06-12 苏州源卓光电科技有限公司 一种基板的曝光方法及加工方法
US20220143657A1 (en) * 2020-11-06 2022-05-12 Jelight Company, Inc. Ultraviolet specimen cleaning apparatus
KR20220131680A (ko) 2021-03-22 2022-09-29 세메스 주식회사 기판 처리 장치
JP7726653B2 (ja) * 2021-03-31 2025-08-20 芝浦メカトロニクス株式会社 基板乾燥装置及び基板処理装置
US11798799B2 (en) * 2021-08-09 2023-10-24 Applied Materials, Inc. Ultraviolet and ozone clean system
US12327743B2 (en) * 2021-08-27 2025-06-10 Taiwan Semiconductor Manufacturing Company Limited Process tool and method for handling semiconductor substrate
KR102643365B1 (ko) * 2021-09-03 2024-03-07 세메스 주식회사 기판 처리 장치 및 방법
KR102740948B1 (ko) * 2021-12-28 2024-12-11 세메스 주식회사 조사 모듈 및 이를 포함하는 기판 처리 장치
KR102683730B1 (ko) * 2021-12-30 2024-07-11 세메스 주식회사 기판 처리 장치
KR102858824B1 (ko) * 2021-12-30 2025-09-11 세메스 주식회사 냉각 챔버 및 기판 처리 장치
TWI902052B (zh) * 2022-11-16 2025-10-21 日商斯庫林集團股份有限公司 處理腔室之洗淨方法、清掃用配件及基板處理系統
US12610776B2 (en) 2023-01-18 2026-04-21 Samsung Electronics Co., Ltd. Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003277A (ja) * 2012-05-23 2014-01-09 Dainippon Screen Mfg Co Ltd パーティクル測定方法、熱処理装置および熱処理方法
KR101870659B1 (ko) * 2016-12-26 2018-06-27 세메스 주식회사 기판 처리 장치 및 방법

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028235A (ja) * 1983-07-26 1985-02-13 Nec Corp 半導体装置の製造方法
JPS60240128A (ja) * 1984-05-15 1985-11-29 Hitachi Ltd 電磁波照射型洗浄方法
TW252211B (https=) 1993-04-12 1995-07-21 Cauldron Ltd Parthership
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
KR20010034992A (ko) 2000-06-29 2001-05-07 박용석 자외선 조사장치
US7075037B2 (en) * 2001-03-02 2006-07-11 Tokyo Electron Limited Heat treatment apparatus using a lamp for rapidly and uniformly heating a wafer
JP3778432B2 (ja) * 2002-01-23 2006-05-24 東京エレクトロン株式会社 基板処理方法および装置、半導体装置の製造装置
JP2005286162A (ja) * 2004-03-30 2005-10-13 Sprout Co Ltd 基板処理装置およびその処理方法
JP4994074B2 (ja) * 2006-04-20 2012-08-08 東京エレクトロン株式会社 基板洗浄装置，基板洗浄方法，基板処理装置
KR101672735B1 (ko) 2010-07-01 2016-11-04 주식회사 에스앤에스텍 포토마스크 블랭크용 투명 기판의 자외선 세정장치 및 세정 방법
TWI435391B (zh) * 2010-09-16 2014-04-21 大日本網屏製造股份有限公司 閃光熱處理裝置
KR101781424B1 (ko) * 2010-11-26 2017-09-26 서울반도체 주식회사 엘이디 조명기구
TWI689004B (zh) 2012-11-26 2020-03-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
US9232569B2 (en) * 2013-02-27 2016-01-05 Applied Materials, Inc. Solid state light source assisted processing
US9171747B2 (en) * 2013-04-10 2015-10-27 Nordson Corporation Method and apparatus for irradiating a semi-conductor wafer with ultraviolet light
JP6211884B2 (ja) 2013-10-10 2017-10-11 株式会社ディスコ ウェーハの加工方法
KR101579510B1 (ko) * 2013-10-31 2015-12-23 세메스 주식회사 기판 처리 설비
US20150136186A1 (en) * 2013-11-20 2015-05-21 Tokyo Electron Limited System for processing substrates with two or more ultraviolet light sources that provide different wavelengths of light
KR101612416B1 (ko) * 2014-04-22 2016-04-15 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
KR20150138975A (ko) 2014-05-30 2015-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR20160026302A (ko) 2014-08-29 2016-03-09 삼성전자주식회사 기판 처리 장치 및 집적회로 소자 제조 장치와 기판 처리 방법 및 집적회로 소자 제조 방법
KR20160115398A (ko) * 2015-03-27 2016-10-06 에이피시스템 주식회사 히터 블록 및 기판 처리 장치
KR20160141244A (ko) * 2015-05-29 2016-12-08 피에스케이 주식회사 기판 처리 장치 및 방법
KR102121058B1 (ko) * 2015-06-19 2020-06-26 (주) 엔피홀딩스 버퍼챔버를 이용한 건식 및 습식처리 시스템 및 이를 이용한 기판처리 방법
FR3053434B1 (fr) * 2016-06-30 2019-06-28 Valeo Vision Module d'emission de lumiere blanche a spectre enrichi
KR102037906B1 (ko) * 2017-06-23 2019-11-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102037918B1 (ko) * 2017-11-28 2019-10-29 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
US11088002B2 (en) * 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102623544B1 (ko) * 2019-06-10 2024-01-10 삼성전자주식회사 광 조사 기반 웨이퍼 세정 장치 및 그 세정 장치를 포함한 웨이퍼 세정 시스템

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003277A (ja) * 2012-05-23 2014-01-09 Dainippon Screen Mfg Co Ltd パーティクル測定方法、熱処理装置および熱処理方法
KR101870659B1 (ko) * 2016-12-26 2018-06-27 세메스 주식회사 기판 처리 장치 및 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12550658B2 (en) 2023-01-11 2026-02-10 Semes Co., Ltd. Substrate processing apparatus and substrate processing method

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