JP7280225B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- JP7280225B2 JP7280225B2 JP2020119121A JP2020119121A JP7280225B2 JP 7280225 B2 JP7280225 B2 JP 7280225B2 JP 2020119121 A JP2020119121 A JP 2020119121A JP 2020119121 A JP2020119121 A JP 2020119121A JP 7280225 B2 JP7280225 B2 JP 7280225B2
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- light
- substrate
- chamber
- processing apparatus
- light source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/80—Cleaning only by supercritical fluids
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3222—Loading to or unloading from a conveyor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H10P72/3406—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door or cover
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190083570A KR102433558B1 (ko) | 2019-07-11 | 2019-07-11 | 기판 처리 장치 및 기판 처리 방법 |
| KR10-2019-0083570 | 2019-07-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021015977A JP2021015977A (ja) | 2021-02-12 |
| JP2021015977A5 JP2021015977A5 (https=) | 2022-10-06 |
| JP7280225B2 true JP7280225B2 (ja) | 2023-05-23 |
Family
ID=74059453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020119121A Active JP7280225B2 (ja) | 2019-07-11 | 2020-07-10 | 基板処理装置及び基板処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11862491B2 (https=) |
| JP (1) | JP7280225B2 (https=) |
| KR (2) | KR102433558B1 (https=) |
| CN (1) | CN112216631B (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112327578B (zh) * | 2019-08-05 | 2023-11-21 | 源卓微纳科技(苏州)股份有限公司 | 一种直写光刻机的光刻系统 |
| CN111273522A (zh) * | 2020-04-11 | 2020-06-12 | 苏州源卓光电科技有限公司 | 一种基板的曝光方法及加工方法 |
| US20220143657A1 (en) * | 2020-11-06 | 2022-05-12 | Jelight Company, Inc. | Ultraviolet specimen cleaning apparatus |
| KR20220131680A (ko) | 2021-03-22 | 2022-09-29 | 세메스 주식회사 | 기판 처리 장치 |
| JP7726653B2 (ja) * | 2021-03-31 | 2025-08-20 | 芝浦メカトロニクス株式会社 | 基板乾燥装置及び基板処理装置 |
| US11798799B2 (en) * | 2021-08-09 | 2023-10-24 | Applied Materials, Inc. | Ultraviolet and ozone clean system |
| US12327743B2 (en) * | 2021-08-27 | 2025-06-10 | Taiwan Semiconductor Manufacturing Company Limited | Process tool and method for handling semiconductor substrate |
| KR102643365B1 (ko) * | 2021-09-03 | 2024-03-07 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| KR102740948B1 (ko) * | 2021-12-28 | 2024-12-11 | 세메스 주식회사 | 조사 모듈 및 이를 포함하는 기판 처리 장치 |
| KR102683730B1 (ko) * | 2021-12-30 | 2024-07-11 | 세메스 주식회사 | 기판 처리 장치 |
| KR102858824B1 (ko) * | 2021-12-30 | 2025-09-11 | 세메스 주식회사 | 냉각 챔버 및 기판 처리 장치 |
| TWI902052B (zh) * | 2022-11-16 | 2025-10-21 | 日商斯庫林集團股份有限公司 | 處理腔室之洗淨方法、清掃用配件及基板處理系統 |
| KR20240111944A (ko) | 2023-01-11 | 2024-07-18 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US12610776B2 (en) | 2023-01-18 | 2026-04-21 | Samsung Electronics Co., Ltd. | Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005286162A (ja) | 2004-03-30 | 2005-10-13 | Sprout Co Ltd | 基板処理装置およびその処理方法 |
| JP2016503588A (ja) | 2012-11-26 | 2016-02-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理 |
| JP2016189454A (ja) | 2015-03-27 | 2016-11-04 | エーピー システムズ インコーポレイテッド | ヒーターブロック及び基板処理装置 |
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| JPS6028235A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体装置の製造方法 |
| JPS60240128A (ja) * | 1984-05-15 | 1985-11-29 | Hitachi Ltd | 電磁波照射型洗浄方法 |
| TW252211B (https=) | 1993-04-12 | 1995-07-21 | Cauldron Ltd Parthership | |
| US6015503A (en) * | 1994-06-14 | 2000-01-18 | Fsi International, Inc. | Method and apparatus for surface conditioning |
| US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
| KR20010034992A (ko) | 2000-06-29 | 2001-05-07 | 박용석 | 자외선 조사장치 |
| US7075037B2 (en) * | 2001-03-02 | 2006-07-11 | Tokyo Electron Limited | Heat treatment apparatus using a lamp for rapidly and uniformly heating a wafer |
| JP3778432B2 (ja) * | 2002-01-23 | 2006-05-24 | 東京エレクトロン株式会社 | 基板処理方法および装置、半導体装置の製造装置 |
| JP4994074B2 (ja) * | 2006-04-20 | 2012-08-08 | 東京エレクトロン株式会社 | 基板洗浄装置,基板洗浄方法,基板処理装置 |
| KR101672735B1 (ko) | 2010-07-01 | 2016-11-04 | 주식회사 에스앤에스텍 | 포토마스크 블랭크용 투명 기판의 자외선 세정장치 및 세정 방법 |
| TWI435391B (zh) * | 2010-09-16 | 2014-04-21 | 大日本網屏製造股份有限公司 | 閃光熱處理裝置 |
| KR101781424B1 (ko) * | 2010-11-26 | 2017-09-26 | 서울반도체 주식회사 | 엘이디 조명기구 |
| JP6184713B2 (ja) * | 2012-05-23 | 2017-08-23 | 株式会社Screenホールディングス | パーティクル測定方法および熱処理装置 |
| US9232569B2 (en) * | 2013-02-27 | 2016-01-05 | Applied Materials, Inc. | Solid state light source assisted processing |
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| JP6211884B2 (ja) | 2013-10-10 | 2017-10-11 | 株式会社ディスコ | ウェーハの加工方法 |
| KR101579510B1 (ko) * | 2013-10-31 | 2015-12-23 | 세메스 주식회사 | 기판 처리 설비 |
| US20150136186A1 (en) * | 2013-11-20 | 2015-05-21 | Tokyo Electron Limited | System for processing substrates with two or more ultraviolet light sources that provide different wavelengths of light |
| KR101612416B1 (ko) * | 2014-04-22 | 2016-04-15 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR20150138975A (ko) | 2014-05-30 | 2015-12-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR20160026302A (ko) | 2014-08-29 | 2016-03-09 | 삼성전자주식회사 | 기판 처리 장치 및 집적회로 소자 제조 장치와 기판 처리 방법 및 집적회로 소자 제조 방법 |
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| KR102037906B1 (ko) * | 2017-06-23 | 2019-11-27 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR102037918B1 (ko) * | 2017-11-28 | 2019-10-29 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| US11088002B2 (en) * | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| KR102623544B1 (ko) * | 2019-06-10 | 2024-01-10 | 삼성전자주식회사 | 광 조사 기반 웨이퍼 세정 장치 및 그 세정 장치를 포함한 웨이퍼 세정 시스템 |
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2019
- 2019-07-11 KR KR1020190083570A patent/KR102433558B1/ko active Active
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2020
- 2020-07-09 CN CN202010659864.XA patent/CN112216631B/zh active Active
- 2020-07-10 US US16/925,449 patent/US11862491B2/en active Active
- 2020-07-10 JP JP2020119121A patent/JP7280225B2/ja active Active
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2022
- 2022-08-12 KR KR1020220101053A patent/KR102741646B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005286162A (ja) | 2004-03-30 | 2005-10-13 | Sprout Co Ltd | 基板処理装置およびその処理方法 |
| JP2016503588A (ja) | 2012-11-26 | 2016-02-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理 |
| JP2016189454A (ja) | 2015-03-27 | 2016-11-04 | エーピー システムズ インコーポレイテッド | ヒーターブロック及び基板処理装置 |
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| US11862491B2 (en) | 2024-01-02 |
| CN112216631A (zh) | 2021-01-12 |
| CN112216631B (zh) | 2024-07-16 |
| JP2021015977A (ja) | 2021-02-12 |
| KR20220119333A (ko) | 2022-08-29 |
| KR20210008209A (ko) | 2021-01-21 |
| KR102741646B1 (ko) | 2024-12-17 |
| US20210013064A1 (en) | 2021-01-14 |
| KR102433558B1 (ko) | 2022-08-19 |
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