KR102432861B1 - 거리 측정을 위한 이미지 센서 - Google Patents

거리 측정을 위한 이미지 센서 Download PDF

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KR102432861B1
KR102432861B1 KR1020170075815A KR20170075815A KR102432861B1 KR 102432861 B1 KR102432861 B1 KR 102432861B1 KR 1020170075815 A KR1020170075815 A KR 1020170075815A KR 20170075815 A KR20170075815 A KR 20170075815A KR 102432861 B1 KR102432861 B1 KR 102432861B1
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photoelectric conversion
transfer gate
vertical transfer
semiconductor substrate
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KR20180136717A (ko
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진영구
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삼성전자주식회사
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Priority to KR1020170075815A priority Critical patent/KR102432861B1/ko
Priority to US15/871,407 priority patent/US10388682B2/en
Priority to CN201810337227.3A priority patent/CN109148493B/zh
Priority to SG10201803204RA priority patent/SG10201803204RA/en
Priority to DE102018109752.2A priority patent/DE102018109752B4/de
Priority to JP2018113807A priority patent/JP7128039B2/ja
Publication of KR20180136717A publication Critical patent/KR20180136717A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H01L27/14614—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
    • G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/42—Simultaneous measurement of distance and other co-ordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
    • H01L27/14625—
    • H01L27/14636—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Optical Distance (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020170075815A 2017-06-15 2017-06-15 거리 측정을 위한 이미지 센서 Active KR102432861B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020170075815A KR102432861B1 (ko) 2017-06-15 2017-06-15 거리 측정을 위한 이미지 센서
US15/871,407 US10388682B2 (en) 2017-06-15 2018-01-15 Image sensor for measuring distance
CN201810337227.3A CN109148493B (zh) 2017-06-15 2018-04-16 用于测量距离的图像传感器
SG10201803204RA SG10201803204RA (en) 2017-06-15 2018-04-17 Image Sensor For Measuring Distance
DE102018109752.2A DE102018109752B4 (de) 2017-06-15 2018-04-24 Bildsensor für abstandsmessungen
JP2018113807A JP7128039B2 (ja) 2017-06-15 2018-06-14 距離測定のためのイメージセンサ

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Application Number Priority Date Filing Date Title
KR1020170075815A KR102432861B1 (ko) 2017-06-15 2017-06-15 거리 측정을 위한 이미지 센서

Publications (2)

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KR20180136717A KR20180136717A (ko) 2018-12-26
KR102432861B1 true KR102432861B1 (ko) 2022-08-16

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US (1) US10388682B2 (enExample)
JP (1) JP7128039B2 (enExample)
KR (1) KR102432861B1 (enExample)
CN (1) CN109148493B (enExample)
DE (1) DE102018109752B4 (enExample)
SG (1) SG10201803204RA (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6879919B2 (ja) * 2015-09-17 2021-06-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子機器、及び、固体撮像素子の製造方法
CN107422571B (zh) * 2017-09-20 2020-08-21 京东方科技集团股份有限公司 显示面板、装置及其操控方法
DE102017128369A1 (de) 2017-11-30 2019-06-06 Infineon Technologies Ag Vorrichtung und verfahren zum lokalisieren eines ersten bauelements, lokalisierungsvorrichtung und verfahren zur lokalisierung
KR102651130B1 (ko) 2018-12-06 2024-03-26 삼성전자주식회사 거리 측정을 위한 이미지 센서
KR102749135B1 (ko) * 2019-03-06 2025-01-03 삼성전자주식회사 이미지 센서 및 이미징 장치
US12235392B2 (en) 2019-03-06 2025-02-25 Sony Semiconductor Solutions Corporation Sensor and distance measurement apparatus having an avalanche photodiode and on-chip lens
WO2020234644A1 (en) * 2019-05-21 2020-11-26 Sony Semiconductor Solutions Corporation Simultaneous capture of multiple phases for imaging devices
WO2020241151A1 (ja) * 2019-05-24 2020-12-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び測距装置
EP3989295A4 (en) * 2019-06-21 2022-08-24 Sony Semiconductor Solutions Corporation PHOTOELECTRIC CONVERSION ELEMENT, LIGHT DETECTION DEVICE, LIGHT DETECTION SYSTEM, ELECTRONIC DEVICE AND MOVABLE BODY
WO2021030034A1 (en) 2019-08-15 2021-02-18 Apple Inc. Depth mapping using spatial multiplexing of illumination phase
WO2021039955A1 (ja) * 2019-08-30 2021-03-04 凸版印刷株式会社 光電変換素子、撮像素子、および撮像システム
TW202127637A (zh) * 2019-11-19 2021-07-16 日商索尼半導體解決方案公司 受光元件、測距模組
US20210156881A1 (en) * 2019-11-26 2021-05-27 Faro Technologies, Inc. Dynamic machine vision sensor (dmvs) that performs integrated 3d tracking
KR102758786B1 (ko) * 2019-11-26 2025-01-23 에스케이하이닉스 주식회사 이미지 센서
WO2021117589A1 (ja) 2019-12-13 2021-06-17 ソニーセミコンダクタソリューションズ株式会社 受光素子及び受光装置
JP7613864B2 (ja) * 2019-12-18 2025-01-15 ソニーセミコンダクタソリューションズ株式会社 受光装置
TWI889735B (zh) * 2019-12-25 2025-07-11 日商索尼半導體解決方案公司 受光元件及受光裝置
JP7696830B2 (ja) * 2019-12-25 2025-06-23 ソニーセミコンダクタソリューションズ株式会社 受光素子及び受光装置
DE112020006385T5 (de) * 2019-12-26 2022-10-13 Hamamatsu Photonics K.K. Range-imaging-sensor
KR102857510B1 (ko) * 2019-12-26 2025-09-09 하마마츠 포토닉스 가부시키가이샤 측거 이미지 센서 및 그 제조 방법
TWI882059B (zh) * 2020-01-29 2025-05-01 日商索尼半導體解決方案公司 攝像元件、攝像裝置及測距裝置
WO2021161687A1 (ja) * 2020-02-10 2021-08-19 ソニーセミコンダクタソリューションズ株式会社 センサ装置、測距装置
JP2021136416A (ja) * 2020-02-28 2021-09-13 ソニーセミコンダクタソリューションズ株式会社 センサ素子およびセンサ装置
JP7557172B2 (ja) * 2020-03-06 2024-09-27 Ｇｐｉｘｅｌ Ｊａｐａｎ株式会社 固体撮像装置用画素
US11763472B1 (en) 2020-04-02 2023-09-19 Apple Inc. Depth mapping with MPI mitigation using reference illumination pattern
JP6913793B1 (ja) * 2020-05-08 2021-08-04 浜松ホトニクス株式会社 光センサ
JP2021193696A (ja) * 2020-06-07 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 センサ装置
JP2021197388A (ja) 2020-06-10 2021-12-27 ソニーセミコンダクタソリューションズ株式会社 受光装置およびその製造方法、並びに、測距装置
US11558569B2 (en) * 2020-06-11 2023-01-17 Apple Inc. Global-shutter image sensor with time-of-flight sensing capability
JP2023176046A (ja) 2020-10-19 2023-12-13 ソニーセミコンダクタソリューションズ株式会社 センサ
KR20220073404A (ko) * 2020-11-26 2022-06-03 삼성전자주식회사 복수의 포토다이오드들을 포함하는 거리 픽셀 및 이를 포함하는 비행 거리 센서
WO2022123954A1 (ja) * 2020-12-10 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器及び固体撮像装置の製造方法
CN112637512B (zh) * 2020-12-14 2022-08-09 联合微电子中心有限责任公司 全局快门图像传感器、控制方法及摄像装置
US12170298B2 (en) 2020-12-28 2024-12-17 Samsung Electronics Co., Ltd. Image sensor including a photodiode
KR20240019093A (ko) * 2021-06-11 2024-02-14 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 장치 및 그 제조 방법, 그리고 전자 기기
KR20230136286A (ko) * 2022-03-18 2023-09-26 삼성전자주식회사 이미지 센서
WO2024043056A1 (ja) * 2022-08-24 2024-02-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子、測距装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151126A (ja) * 2010-01-20 2011-08-04 Toshiba Corp 固体撮像装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493669A (en) 1977-12-14 1979-07-24 Toray Ind Inc Treating method for desulfurized waste liquid of coke oven gas
JPH03109769A (ja) * 1989-09-25 1991-05-09 Nikon Corp 固体撮像装置の単位画素
US5851191A (en) * 1997-07-01 1998-12-22 Neurometrix, Inc. Apparatus and methods for assessment of neuromuscular function
JP4742523B2 (ja) * 2004-06-14 2011-08-10 ソニー株式会社 固体撮像素子及びその駆動方法
JP4108717B2 (ja) * 2006-07-03 2008-06-25 日本電気株式会社 プリント回路基板
US20080023738A1 (en) * 2006-07-28 2008-01-31 Micron Technology, Inc. Silicon microlens array
KR101448152B1 (ko) 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
EP2133918B1 (en) * 2008-06-09 2015-01-28 Sony Corporation Solid-state imaging device, drive method thereof and electronic apparatus
JP5401928B2 (ja) * 2008-11-06 2014-01-29 ソニー株式会社 固体撮像装置、及び電子機器
US8374083B2 (en) * 2008-07-02 2013-02-12 Qualcomm Incorporated Methods and systems for priority-based service requests, grants for service admission and network congestion control
KR20100012677A (ko) * 2008-07-29 2010-02-08 주식회사 동부하이텍 이미지 센서 및 이의 제조 방법
US7836792B2 (en) * 2008-09-25 2010-11-23 Baker Hughes Incorporated System, method and apparatus for enhanced cutting element retention and support in a rock bit
US20100314667A1 (en) 2009-06-11 2010-12-16 Omnivision Technologies, Inc. Cmos pixel with dual-element transfer gate
US9117712B1 (en) 2009-07-24 2015-08-25 Mesa Imaging Ag Demodulation pixel with backside illumination and charge barrier
DE102009037596B4 (de) 2009-08-14 2014-07-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Pixelstruktur, System und Verfahren zur optischen Abstandsmessung sowie Steuerschaltung für die Pixelstruktur
JP5493669B2 (ja) 2009-10-07 2014-05-14 ソニー株式会社 固体撮像装置、撮像装置、および固体撮像装置の製造方法
CN102339561A (zh) * 2010-07-22 2012-02-01 鸿富锦精密工业（深圳）有限公司 机壳及使用该机壳的显示设备
KR101845257B1 (ko) * 2011-02-07 2018-04-04 삼성전자주식회사 이미지 센서
JP2013084785A (ja) * 2011-10-11 2013-05-09 Sony Corp 固体撮像装置、撮像装置
AU2012324015A1 (en) * 2011-12-01 2013-06-20 Purdue Pharma L.P. Azetidine-substituted quinoxaline-type piperidine compounds and uses thererof
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
DE102011056369A1 (de) 2011-12-13 2013-06-13 Pmdtechnologies Gmbh Halbleiterbauelement mit trench gate
KR101968197B1 (ko) 2012-05-18 2019-04-12 삼성전자주식회사 이미지 센서 및 이의 형성 방법
JP2015228388A (ja) 2012-09-25 2015-12-17 ソニー株式会社 固体撮像装置、電子機器
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
US11322533B2 (en) * 2013-03-14 2022-05-03 Sony Semiconductor Solutions Corporation Solid state image sensor tolerant to misalignment and having a high photoelectric conversion efficiency
JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
US9356061B2 (en) 2013-08-05 2016-05-31 Apple Inc. Image sensor with buried light shield and vertical gate
KR102174650B1 (ko) * 2013-10-31 2020-11-05 삼성전자주식회사 이미지 센서
JP2015153772A (ja) * 2014-02-10 2015-08-24 株式会社東芝 固体撮像装置
KR102252647B1 (ko) 2014-07-11 2021-05-17 삼성전자주식회사 이미지 센서의 픽셀 및 이미지 센서
KR102383649B1 (ko) * 2014-08-19 2022-04-08 삼성전자주식회사 Cmos 이미지 센서
KR102286111B1 (ko) 2014-08-21 2021-08-04 삼성전자주식회사 단위 픽셀, 상기 단위 픽셀을 포함하는 이미지 센서, 및 상기 단위 픽셀을 포함하는 이미지 처리 시스템
US9437633B2 (en) 2014-11-06 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Depth sensing pixel, composite pixel image sensor and method of making the composite pixel image sensor
JP2016100347A (ja) * 2014-11-18 2016-05-30 ソニー株式会社 固体撮像装置及びその製造方法、並びに電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151126A (ja) * 2010-01-20 2011-08-04 Toshiba Corp 固体撮像装置

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