DE102018109752B4 - Bildsensor für abstandsmessungen - Google Patents

Bildsensor für abstandsmessungen Download PDF

Info

Publication number
DE102018109752B4
DE102018109752B4 DE102018109752.2A DE102018109752A DE102018109752B4 DE 102018109752 B4 DE102018109752 B4 DE 102018109752B4 DE 102018109752 A DE102018109752 A DE 102018109752A DE 102018109752 B4 DE102018109752 B4 DE 102018109752B4
Authority
DE
Germany
Prior art keywords
region
photoelectric conversion
image sensor
semiconductor substrate
conversion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102018109752.2A
Other languages
German (de)
English (en)
Other versions
DE102018109752A1 (de
Inventor
Young-Gu Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102018109752A1 publication Critical patent/DE102018109752A1/de
Application granted granted Critical
Publication of DE102018109752B4 publication Critical patent/DE102018109752B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
    • G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/42—Simultaneous measurement of distance and other co-ordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Optical Distance (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE102018109752.2A 2017-06-15 2018-04-24 Bildsensor für abstandsmessungen Active DE102018109752B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0075815 2017-06-15
KR1020170075815A KR102432861B1 (ko) 2017-06-15 2017-06-15 거리 측정을 위한 이미지 센서

Publications (2)

Publication Number Publication Date
DE102018109752A1 DE102018109752A1 (de) 2018-12-20
DE102018109752B4 true DE102018109752B4 (de) 2023-12-07

Family

ID=64457674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018109752.2A Active DE102018109752B4 (de) 2017-06-15 2018-04-24 Bildsensor für abstandsmessungen

Country Status (6)

Country Link
US (1) US10388682B2 (enExample)
JP (1) JP7128039B2 (enExample)
KR (1) KR102432861B1 (enExample)
CN (1) CN109148493B (enExample)
DE (1) DE102018109752B4 (enExample)
SG (1) SG10201803204RA (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6879919B2 (ja) * 2015-09-17 2021-06-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子機器、及び、固体撮像素子の製造方法
CN107422571B (zh) * 2017-09-20 2020-08-21 京东方科技集团股份有限公司 显示面板、装置及其操控方法
DE102017128369A1 (de) 2017-11-30 2019-06-06 Infineon Technologies Ag Vorrichtung und verfahren zum lokalisieren eines ersten bauelements, lokalisierungsvorrichtung und verfahren zur lokalisierung
KR102651130B1 (ko) 2018-12-06 2024-03-26 삼성전자주식회사 거리 측정을 위한 이미지 센서
KR102749135B1 (ko) * 2019-03-06 2025-01-03 삼성전자주식회사 이미지 센서 및 이미징 장치
US12235392B2 (en) 2019-03-06 2025-02-25 Sony Semiconductor Solutions Corporation Sensor and distance measurement apparatus having an avalanche photodiode and on-chip lens
WO2020234644A1 (en) * 2019-05-21 2020-11-26 Sony Semiconductor Solutions Corporation Simultaneous capture of multiple phases for imaging devices
WO2020241151A1 (ja) * 2019-05-24 2020-12-03 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び測距装置
EP3989295A4 (en) * 2019-06-21 2022-08-24 Sony Semiconductor Solutions Corporation PHOTOELECTRIC CONVERSION ELEMENT, LIGHT DETECTION DEVICE, LIGHT DETECTION SYSTEM, ELECTRONIC DEVICE AND MOVABLE BODY
WO2021030034A1 (en) 2019-08-15 2021-02-18 Apple Inc. Depth mapping using spatial multiplexing of illumination phase
WO2021039955A1 (ja) * 2019-08-30 2021-03-04 凸版印刷株式会社 光電変換素子、撮像素子、および撮像システム
TW202127637A (zh) * 2019-11-19 2021-07-16 日商索尼半導體解決方案公司 受光元件、測距模組
US20210156881A1 (en) * 2019-11-26 2021-05-27 Faro Technologies, Inc. Dynamic machine vision sensor (dmvs) that performs integrated 3d tracking
KR102758786B1 (ko) * 2019-11-26 2025-01-23 에스케이하이닉스 주식회사 이미지 센서
WO2021117589A1 (ja) 2019-12-13 2021-06-17 ソニーセミコンダクタソリューションズ株式会社 受光素子及び受光装置
JP7613864B2 (ja) * 2019-12-18 2025-01-15 ソニーセミコンダクタソリューションズ株式会社 受光装置
TWI889735B (zh) * 2019-12-25 2025-07-11 日商索尼半導體解決方案公司 受光元件及受光裝置
JP7696830B2 (ja) * 2019-12-25 2025-06-23 ソニーセミコンダクタソリューションズ株式会社 受光素子及び受光装置
DE112020006385T5 (de) * 2019-12-26 2022-10-13 Hamamatsu Photonics K.K. Range-imaging-sensor
KR102857510B1 (ko) * 2019-12-26 2025-09-09 하마마츠 포토닉스 가부시키가이샤 측거 이미지 센서 및 그 제조 방법
TWI882059B (zh) * 2020-01-29 2025-05-01 日商索尼半導體解決方案公司 攝像元件、攝像裝置及測距裝置
WO2021161687A1 (ja) * 2020-02-10 2021-08-19 ソニーセミコンダクタソリューションズ株式会社 センサ装置、測距装置
JP2021136416A (ja) * 2020-02-28 2021-09-13 ソニーセミコンダクタソリューションズ株式会社 センサ素子およびセンサ装置
JP7557172B2 (ja) * 2020-03-06 2024-09-27 Ｇｐｉｘｅｌ Ｊａｐａｎ株式会社 固体撮像装置用画素
US11763472B1 (en) 2020-04-02 2023-09-19 Apple Inc. Depth mapping with MPI mitigation using reference illumination pattern
JP6913793B1 (ja) * 2020-05-08 2021-08-04 浜松ホトニクス株式会社 光センサ
JP2021193696A (ja) * 2020-06-07 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 センサ装置
JP2021197388A (ja) 2020-06-10 2021-12-27 ソニーセミコンダクタソリューションズ株式会社 受光装置およびその製造方法、並びに、測距装置
US11558569B2 (en) * 2020-06-11 2023-01-17 Apple Inc. Global-shutter image sensor with time-of-flight sensing capability
JP2023176046A (ja) 2020-10-19 2023-12-13 ソニーセミコンダクタソリューションズ株式会社 センサ
KR20220073404A (ko) * 2020-11-26 2022-06-03 삼성전자주식회사 복수의 포토다이오드들을 포함하는 거리 픽셀 및 이를 포함하는 비행 거리 센서
WO2022123954A1 (ja) * 2020-12-10 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器及び固体撮像装置の製造方法
CN112637512B (zh) * 2020-12-14 2022-08-09 联合微电子中心有限责任公司 全局快门图像传感器、控制方法及摄像装置
US12170298B2 (en) 2020-12-28 2024-12-17 Samsung Electronics Co., Ltd. Image sensor including a photodiode
KR20240019093A (ko) * 2021-06-11 2024-02-14 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 장치 및 그 제조 방법, 그리고 전자 기기
KR20230136286A (ko) * 2022-03-18 2023-09-26 삼성전자주식회사 이미지 센서
WO2024043056A1 (ja) * 2022-08-24 2024-02-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子、測距装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055527A1 (de) 2011-02-07 2012-08-09 Samsung Electronics Co. Ltd. Bildsensoren mit einer Gateelektrode, welche einen potentialfreien Diffusionsbereich umgibt
US20150115291A1 (en) 2013-10-31 2015-04-30 Sungchul Kim Image Sensors Having Transfer Gate Electrodes in Trench
US20160056198A1 (en) 2014-08-19 2016-02-25 Seungwook Lee Complementary metal-oxide-semiconductor image sensors

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493669A (en) 1977-12-14 1979-07-24 Toray Ind Inc Treating method for desulfurized waste liquid of coke oven gas
JPH03109769A (ja) * 1989-09-25 1991-05-09 Nikon Corp 固体撮像装置の単位画素
US5851191A (en) * 1997-07-01 1998-12-22 Neurometrix, Inc. Apparatus and methods for assessment of neuromuscular function
JP4742523B2 (ja) * 2004-06-14 2011-08-10 ソニー株式会社 固体撮像素子及びその駆動方法
JP4108717B2 (ja) * 2006-07-03 2008-06-25 日本電気株式会社 プリント回路基板
US20080023738A1 (en) * 2006-07-28 2008-01-31 Micron Technology, Inc. Silicon microlens array
KR101448152B1 (ko) 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
EP2133918B1 (en) * 2008-06-09 2015-01-28 Sony Corporation Solid-state imaging device, drive method thereof and electronic apparatus
JP5401928B2 (ja) * 2008-11-06 2014-01-29 ソニー株式会社 固体撮像装置、及び電子機器
US8374083B2 (en) * 2008-07-02 2013-02-12 Qualcomm Incorporated Methods and systems for priority-based service requests, grants for service admission and network congestion control
KR20100012677A (ko) * 2008-07-29 2010-02-08 주식회사 동부하이텍 이미지 센서 및 이의 제조 방법
US7836792B2 (en) * 2008-09-25 2010-11-23 Baker Hughes Incorporated System, method and apparatus for enhanced cutting element retention and support in a rock bit
US20100314667A1 (en) 2009-06-11 2010-12-16 Omnivision Technologies, Inc. Cmos pixel with dual-element transfer gate
US9117712B1 (en) 2009-07-24 2015-08-25 Mesa Imaging Ag Demodulation pixel with backside illumination and charge barrier
DE102009037596B4 (de) 2009-08-14 2014-07-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Pixelstruktur, System und Verfahren zur optischen Abstandsmessung sowie Steuerschaltung für die Pixelstruktur
JP5493669B2 (ja) 2009-10-07 2014-05-14 ソニー株式会社 固体撮像装置、撮像装置、および固体撮像装置の製造方法
JP5050063B2 (ja) * 2010-01-20 2012-10-17 株式会社東芝 固体撮像装置
CN102339561A (zh) * 2010-07-22 2012-02-01 鸿富锦精密工业（深圳）有限公司 机壳及使用该机壳的显示设备
JP2013084785A (ja) * 2011-10-11 2013-05-09 Sony Corp 固体撮像装置、撮像装置
AU2012324015A1 (en) * 2011-12-01 2013-06-20 Purdue Pharma L.P. Azetidine-substituted quinoxaline-type piperidine compounds and uses thererof
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
DE102011056369A1 (de) 2011-12-13 2013-06-13 Pmdtechnologies Gmbh Halbleiterbauelement mit trench gate
KR101968197B1 (ko) 2012-05-18 2019-04-12 삼성전자주식회사 이미지 센서 및 이의 형성 방법
JP2015228388A (ja) 2012-09-25 2015-12-17 ソニー株式会社 固体撮像装置、電子機器
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
US11322533B2 (en) * 2013-03-14 2022-05-03 Sony Semiconductor Solutions Corporation Solid state image sensor tolerant to misalignment and having a high photoelectric conversion efficiency
JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
US9356061B2 (en) 2013-08-05 2016-05-31 Apple Inc. Image sensor with buried light shield and vertical gate
JP2015153772A (ja) * 2014-02-10 2015-08-24 株式会社東芝 固体撮像装置
KR102252647B1 (ko) 2014-07-11 2021-05-17 삼성전자주식회사 이미지 센서의 픽셀 및 이미지 센서
KR102286111B1 (ko) 2014-08-21 2021-08-04 삼성전자주식회사 단위 픽셀, 상기 단위 픽셀을 포함하는 이미지 센서, 및 상기 단위 픽셀을 포함하는 이미지 처리 시스템
US9437633B2 (en) 2014-11-06 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Depth sensing pixel, composite pixel image sensor and method of making the composite pixel image sensor
JP2016100347A (ja) * 2014-11-18 2016-05-30 ソニー株式会社 固体撮像装置及びその製造方法、並びに電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055527A1 (de) 2011-02-07 2012-08-09 Samsung Electronics Co. Ltd. Bildsensoren mit einer Gateelektrode, welche einen potentialfreien Diffusionsbereich umgibt
US20150115291A1 (en) 2013-10-31 2015-04-30 Sungchul Kim Image Sensors Having Transfer Gate Electrodes in Trench
US20160056198A1 (en) 2014-08-19 2016-02-25 Seungwook Lee Complementary metal-oxide-semiconductor image sensors

Also Published As

Publication number Publication date
CN109148493A (zh) 2019-01-04
KR20180136717A (ko) 2018-12-26
JP2019004149A (ja) 2019-01-10
CN109148493B (zh) 2023-01-17
JP7128039B2 (ja) 2022-08-30
SG10201803204RA (en) 2019-01-30
KR102432861B1 (ko) 2022-08-16
DE102018109752A1 (de) 2018-12-20
US10388682B2 (en) 2019-08-20
US20180366504A1 (en) 2018-12-20

Similar Documents

Publication Publication Date Title
DE102018109752B4 (de) Bildsensor für abstandsmessungen
US11342368B2 (en) Image sensors for distance measurement
US10983216B2 (en) Depth field imaging apparatus, methods, and applications
DE102009037596B4 (de) Pixelstruktur, System und Verfahren zur optischen Abstandsmessung sowie Steuerschaltung für die Pixelstruktur
DE102019107807A1 (de) Zeitauflösender bildsensor zur entfernungsmessung und 2d-grauskalenbildgebung
US10708511B2 (en) Three-dimensional motion obtaining apparatus and three-dimensional motion obtaining method
US8717469B2 (en) Fast gating photosurface
US20110198481A1 (en) Image sensor and operating method
DE102011079589A1 (de) Einheitspixel für ein Photodetektionsbauelement
DE112005000411T5 (de) Laufzeit-Reichweitenerfassungssensor
DE112020005923T5 (de) Festkörper-bildgebungsvorrichtung und bildgebungsvorrichtung mit kombinierten dynamik-vision-sensor- und bildgebungsfunktionen
DE112021000828T5 (de) Photoelektrische umwandlungsvorrichtung, photoelektrischesumwandlungssystem und bewegliches objekt
DE202022103497U1 (de) Lidar-Sensor für mobile Geräte
JP6887126B2 (ja) ３次元モーション取得装置、及び３次元モーション取得方法
DE112022003348T5 (de) Bildgebungselement und elektronische vorrichtung
WO2021112150A1 (en) Imaging devices and imaging apparatuses, and methods for the same
DE102022124036A1 (de) Photoelektrische Umwandlungsvorrichtung, photoelektrisches Umwandlungssystem und beweglicher Körper
US20240063237A1 (en) Solid-state imaging device and electronic equipment
DE102022122392A1 (de) Photoelektrische Umwandlungsvorrichtung
Dai Photonic Demodulator for Time-Of-Flight Image Sensor
US20240222404A1 (en) Image capture apparatus and methods using color co-site sampling
DE112023000680T5 (de) Fotodetektionsvorrichtung
DE112021002937T5 (de) Entfernungsmessvorrichtung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027146000

Ipc: H10F0039180000