KR102419924B1 - 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성 - Google Patents

실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성 Download PDF

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KR102419924B1
KR102419924B1 KR1020217033836A KR20217033836A KR102419924B1 KR 102419924 B1 KR102419924 B1 KR 102419924B1 KR 1020217033836 A KR1020217033836 A KR 1020217033836A KR 20217033836 A KR20217033836 A KR 20217033836A KR 102419924 B1 KR102419924 B1 KR 102419924B1
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layer
graphene
silicon
boron nitride
metal film
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KR20210130831A (ko
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비카스 베리
산제이 비후라
퐁 응우옌
마이클 알. 시크리스트
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글로벌웨이퍼스 씨오., 엘티디.
더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이
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  • Crystallography & Structural Chemistry (AREA)
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  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
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KR1020217033836A 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성 Active KR102419924B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662335149P 2016-05-12 2016-05-12
US62/335,149 2016-05-12
KR1020207028017A KR102317740B1 (ko) 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성
PCT/US2017/030124 WO2017196559A1 (en) 2016-05-12 2017-04-28 Direct formation of hexagonal boron nitride on silicon based dielectrics

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KR1020207028017A Division KR102317740B1 (ko) 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성

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KR20210130831A KR20210130831A (ko) 2021-11-01
KR102419924B1 true KR102419924B1 (ko) 2022-07-11

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KR1020187032597A Active KR102163616B1 (ko) 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성
KR1020207028017A Active KR102317740B1 (ko) 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성

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KR1020207028017A Active KR102317740B1 (ko) 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성

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US (3) US10658472B2 (enExample)
EP (3) EP4131338A3 (enExample)
JP (3) JP6775804B2 (enExample)
KR (3) KR102419924B1 (enExample)
CN (1) CN109791876B (enExample)
ES (1) ES2940083T3 (enExample)
WO (1) WO2017196559A1 (enExample)

Families Citing this family (33)

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Publication number Priority date Publication date Assignee Title
CN107994078B (zh) * 2017-12-14 2020-08-11 北京华碳科技有限责任公司 具有源极控制电极的场效应晶体管、制造方法和电子器件
US10490673B2 (en) * 2018-03-02 2019-11-26 Texas Instruments Incorporated Integration of graphene and boron nitride hetero-structure device
US11332369B2 (en) * 2018-03-22 2022-05-17 BNNano, Inc. Compositions and aggregates comprising boron nitride nanotube structures, and methods of making
CN109180026A (zh) * 2018-07-26 2019-01-11 吉林大学 利用化学气相沉积方法制备蓝宝石光纤包层的方法
US11339499B2 (en) * 2018-10-08 2022-05-24 Korea Institute Of Science And Technology Method for epitaxial growth of single crystalline heterogeneous 2D materials and stacked structure
JP7253943B2 (ja) * 2019-03-15 2023-04-07 東京エレクトロン株式会社 六方晶窒化ホウ素膜を形成する方法および装置
US11158807B2 (en) * 2019-10-18 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of manufacturing the same
CN110676384B (zh) * 2019-11-05 2024-11-26 南京理工大学 一种氮化硼封装的二维有机-无机异质结及其制备方法
CN113023718B (zh) * 2019-12-24 2022-11-01 北京大学 一种洁净转移制备高质量悬空二维材料支撑膜的方法
CN111243942A (zh) * 2020-01-19 2020-06-05 吉林大学 利用过渡金属或合金作为缓冲层提高六方氮化硼结晶质量的方法
US11075273B1 (en) 2020-03-04 2021-07-27 International Business Machines Corporation Nanosheet electrostatic discharge structure
KR102314020B1 (ko) * 2020-05-06 2021-10-15 아주대학교산학협력단 육방정계 질화붕소/그래핀 2차원 복합 소재 제조방법
CN115004343B (zh) * 2020-06-28 2025-02-28 深圳清华大学研究院 带有微结构的原子级平整器件及其制备方法
KR20220033997A (ko) * 2020-09-10 2022-03-17 에이에스엠 아이피 홀딩 비.브이. 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치
US11545565B2 (en) * 2020-10-21 2023-01-03 IceMos Technology Limited Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs
JP7501312B2 (ja) * 2020-11-05 2024-06-18 富士通株式会社 光センサ及びその製造方法
CN112582542B (zh) * 2020-12-06 2022-09-30 南开大学 一种基于二维范德华异质结构的单分子场效应晶体管及其制备方法
US11830729B2 (en) * 2021-01-08 2023-11-28 Applied Materials, Inc. Low-k boron carbonitride films
CN113136641B (zh) * 2021-03-15 2022-05-31 杭州电子科技大学 一种氮、硼掺杂非晶碳中空纤维膜的制备方法
KR102504324B1 (ko) * 2021-06-28 2023-02-28 경희대학교 산학협력단 자외선 방출 광 소자 및 이의 동작 방법
US20240295596A1 (en) * 2021-09-08 2024-09-05 Otowa Electric Co., Ltd. A sensor device capable of measuring electric field strength of an external electric field and method for measuring external electric field
CN118077030A (zh) * 2021-09-17 2024-05-24 应用材料公司 六方氮化硼沉积
EP4500576A1 (en) * 2022-03-31 2025-02-05 Archer Materials Limited FABRICATION AND PROCESSING OF GRAPHENE ELECTRONIC DEVICES ON SILICON WITH A SiO2 PASSIVATION LAYER
CN115064595B (zh) * 2022-06-30 2025-11-07 中国科学院半导体研究所 一种mos器件及其制备方法
KR20240092593A (ko) * 2022-12-14 2024-06-24 에이에스엠 아이피 홀딩 비.브이. 질화붕소 증착 방법 및 시스템
EP4639634A1 (en) * 2022-12-23 2025-10-29 Archer Materials Limited Methods for fabrication of graphene field-effect transistors with a liquid top-gate and associated componentry
WO2025085123A2 (en) * 2023-06-20 2025-04-24 Kansas State University Research Foundation Crystalline hexagonal boron nitride with nitrogen-15 isotope enrichment
CN117512559B (zh) * 2023-11-13 2025-10-31 吉林大学 一种原位c掺杂的p型六方氮化硼薄膜及其制备方法
CN118374789A (zh) * 2024-04-19 2024-07-23 南京大学 快速等厚生长高介电性能六方氮化硼薄膜的方法及薄膜
CN118929587B (zh) * 2024-08-27 2025-10-03 中国科学院兰州化学物理研究所 一种自组装球状氮化硼及其制备方法
US12479730B1 (en) 2024-12-02 2025-11-25 Lyten, Inc. Homogenous, partially oxidized carbon and microwave-assisted methods of making the same
CN119980151A (zh) * 2025-01-13 2025-05-13 南京理工大学 一种可控合成金属-有机纳米带的方法
CN119913478A (zh) * 2025-01-24 2025-05-02 中山大学 高附着力的8英寸六方氮化硼厚膜生长方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140299839A1 (en) 2010-12-21 2014-10-09 The Trustees Of Columbia University In The City Of New York Electrical devices with graphene on boron nitride

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5547379A (en) * 1978-10-02 1980-04-03 Takehiko Takahashi Manufacture of boron nitride coated film by chemical vapor deposition
JPS61174621A (ja) * 1985-01-28 1986-08-06 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜結晶の製造方法
JPS61177372A (ja) 1985-01-31 1986-08-09 Kyocera Corp 窒化ホウ素膜の製造方法
JPS63145779A (ja) 1986-12-08 1988-06-17 Katsumitsu Nakamura 六方晶窒化硼素膜の応力制御方法
JP2747044B2 (ja) * 1989-07-25 1998-05-06 昭和電工株式会社 ｐ―ｎ接合を有する立方晶窒化ほう素半導体の製造法
JPH03223463A (ja) * 1990-01-26 1991-10-02 Olympus Optical Co Ltd 立方晶窒化硼素の合成方法
FR2765567B1 (fr) 1997-07-02 1999-10-01 Europ Propulsion Preparation de polyborazylene mesophasique, polyborazylene mesophasique, utilisation a titre de precurseur de bn
JP2002016064A (ja) * 2000-06-28 2002-01-18 Mitsubishi Heavy Ind Ltd 低誘電率六方晶窒化ホウ素膜、層間絶縁膜及びその製造方法
KR100448714B1 (ko) * 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
JP4764260B2 (ja) 2006-06-08 2011-08-31 日本電信電話株式会社 半導体積層構造及びその製造方法
KR100923304B1 (ko) 2007-10-29 2009-10-23 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR101344493B1 (ko) 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
JP4916486B2 (ja) * 2008-06-11 2012-04-11 日本電信電話株式会社 六方晶窒化ホウ素構造および製造方法
AR075976A1 (es) 2009-03-30 2011-05-11 Sumitomo Metal Ind Metodo para la manufactura de tuberias sin costura
CN102448879B (zh) 2009-06-16 2014-10-22 富士通株式会社 石墨结构体、电子部件及电子部件的制造方法
KR101622304B1 (ko) 2009-08-05 2016-05-19 삼성전자주식회사 그라펜 기재 및 그의 제조방법
US8158200B2 (en) 2009-08-18 2012-04-17 University Of North Texas Methods of forming graphene/(multilayer) boron nitride for electronic device applications
US8187955B2 (en) 2009-08-24 2012-05-29 International Business Machines Corporation Graphene growth on a carbon-containing semiconductor layer
KR101736462B1 (ko) 2009-09-21 2017-05-16 한화테크윈 주식회사 그래핀의 제조 방법
US8808810B2 (en) 2009-12-15 2014-08-19 Guardian Industries Corp. Large area deposition of graphene on substrates, and products including the same
US9096437B2 (en) 2010-03-08 2015-08-04 William Marsh Rice University Growth of graphene films from non-gaseous carbon sources
CN101817684B (zh) * 2010-03-25 2012-08-15 西安交通大学 一种多孔Si3N4基体表面覆涂h-BN涂层的方法
US20110233513A1 (en) * 2010-03-29 2011-09-29 International Business Machines Corporation Enhanced bonding interfaces on carbon-based materials for nanoelectronic devices
US8592291B2 (en) * 2010-04-07 2013-11-26 Massachusetts Institute Of Technology Fabrication of large-area hexagonal boron nitride thin films
KR101172625B1 (ko) * 2011-01-21 2012-08-08 한국과학기술원 레이저를 이용한 반도체 소자 제조방법, 이에 의하여 제조된 그래핀 반도체 및 그래핀 트랜지스터
CN102064189A (zh) 2010-12-06 2011-05-18 苏州纳维科技有限公司 金属-半导体电极结构及其制备方法
GB201104824D0 (en) * 2011-03-22 2011-05-04 Univ Manchester Structures and methods relating to graphene
KR101962870B1 (ko) * 2011-03-22 2019-03-27 더 유니버시티 오브 맨체스터 트랜지스터 소자 및 제조를 위한 물질들
US20140120270A1 (en) 2011-04-25 2014-05-01 James M. Tour Direct growth of graphene films on non-catalyst surfaces
KR101878732B1 (ko) 2011-06-24 2018-07-16 삼성전자주식회사 그래핀 기재 및 이를 채용한 투명전극과 트랜지스터
US8884310B2 (en) * 2011-10-19 2014-11-11 Sunedison Semiconductor Limited (Uen201334164H) Direct formation of graphene on semiconductor substrates
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9029228B2 (en) 2011-10-19 2015-05-12 SunEdision Semiconductor Limited (UEN201334164H) Direct and sequential formation of monolayers of boron nitride and graphene on substrates
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6417674B2 (ja) 2013-03-07 2018-11-07 株式会社リコー 感熱記録材料
US9029226B2 (en) 2013-03-13 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices
KR20140114199A (ko) * 2013-03-18 2014-09-26 삼성전자주식회사 이종 적층 구조체 및 그 제조방법, 및 상기 이종 적층 구조체를 구비하는 전기소자
KR102100925B1 (ko) * 2013-03-22 2020-04-14 삼성전자주식회사 기판 구조체, 상기 기판 구조체를 형성하는 방법, 및 이를 구비하는 전기소자
EP4293707A3 (en) * 2013-05-09 2024-03-27 GlobalWafers Co., Ltd. Direct and sequential formation of monolayers of boron nitride and graphene on substrates
KR102144999B1 (ko) * 2013-11-05 2020-08-14 삼성전자주식회사 이차원 물질과 그 형성방법 및 이차원 물질을 포함하는 소자
JP5687328B2 (ja) * 2013-12-11 2015-03-18 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
EP3158365A2 (en) * 2014-06-23 2017-04-26 Rensselaer Polytechnic Institute Radiation-detecting structures and fabrication methods thereof
KR102237826B1 (ko) * 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
JP6241398B2 (ja) * 2014-09-11 2017-12-06 株式会社デンソー グラフェン積層体の製造方法
US9972740B2 (en) * 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140299839A1 (en) 2010-12-21 2014-10-09 The Trustees Of Columbia University In The City Of New York Electrical devices with graphene on boron nitride

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Xiaoqiang Li et al., "Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector", OPTICS EXPRESS, Vol.134, #247288 (2016.01.05.) 1부.*

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