KR102323389B1 - 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 - Google Patents

튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 Download PDF

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KR102323389B1
KR102323389B1 KR1020187028266A KR20187028266A KR102323389B1 KR 102323389 B1 KR102323389 B1 KR 102323389B1 KR 1020187028266 A KR1020187028266 A KR 1020187028266A KR 20187028266 A KR20187028266 A KR 20187028266A KR 102323389 B1 KR102323389 B1 KR 102323389B1
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silicon
layer
substrate
material layer
germanium
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KR20180112869A (ko
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숩하딥 칼
엔 타필리 칸다바라
애런 모스덴
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도쿄엘렉트론가부시키가이샤
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KR1020187028266A 2016-03-02 2017-03-02 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 Active KR102323389B1 (ko)

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US201662302584P 2016-03-02 2016-03-02
US201662302587P 2016-03-02 2016-03-02
US62/302,584 2016-03-02
US62/302,587 2016-03-02
PCT/US2017/020503 WO2017151958A1 (en) 2016-03-02 2017-03-02 Isotropic silicon and silicon-germanium etching with tunable selectivity

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KR102323389B1 true KR102323389B1 (ko) 2021-11-05

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WO (1) WO2017151958A1 (enExample)

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