KR102315293B1 - 건식 연마 장치 - Google Patents
건식 연마 장치 Download PDFInfo
- Publication number
- KR102315293B1 KR102315293B1 KR1020160034618A KR20160034618A KR102315293B1 KR 102315293 B1 KR102315293 B1 KR 102315293B1 KR 1020160034618 A KR1020160034618 A KR 1020160034618A KR 20160034618 A KR20160034618 A KR 20160034618A KR 102315293 B1 KR102315293 B1 KR 102315293B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- wafer
- hole
- air
- polishing pad
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 200
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000013459 approach Methods 0.000 claims abstract description 7
- 238000012546 transfer Methods 0.000 claims description 12
- 238000009837 dry grinding Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 abstract description 13
- 239000000843 powder Substances 0.000 abstract description 8
- 238000004380 ashing Methods 0.000 abstract 1
- 238000000227 grinding Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 20
- 238000005259 measurement Methods 0.000 description 8
- 238000010304 firing Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078838A JP6486752B2 (ja) | 2015-04-08 | 2015-04-08 | 乾式研磨装置 |
JPJP-P-2015-078838 | 2015-04-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20160120656A KR20160120656A (ko) | 2016-10-18 |
KR102315293B1 true KR102315293B1 (ko) | 2021-10-19 |
Family
ID=57244497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160034618A KR102315293B1 (ko) | 2015-04-08 | 2016-03-23 | 건식 연마 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6486752B2 (zh) |
KR (1) | KR102315293B1 (zh) |
CN (1) | CN106041716B (zh) |
TW (1) | TWI681844B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190085889A (ko) | 2019-06-28 | 2019-07-19 | 신원제 | 태양광 패널 청소기 |
CN112621553A (zh) * | 2020-12-15 | 2021-04-09 | 深圳市燃气集团股份有限公司 | 一种维修万向节的工具 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002187061A (ja) * | 2000-12-22 | 2002-07-02 | Matsushita Electric Ind Co Ltd | 研磨温度測定方法、研磨方法、ワーク保持機構および研磨装置 |
JP2006216895A (ja) * | 2005-02-07 | 2006-08-17 | Disco Abrasive Syst Ltd | 半導体ウエーハの研磨装置 |
JP2014103213A (ja) * | 2012-11-19 | 2014-06-05 | Tokyo Seimitsu Co Ltd | 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4754870B2 (ja) | 2005-05-10 | 2011-08-24 | 株式会社ディスコ | 研磨装置 |
JP5464820B2 (ja) * | 2007-10-29 | 2014-04-09 | 株式会社荏原製作所 | 研磨装置 |
JP2013141738A (ja) * | 2012-01-12 | 2013-07-22 | Disco Corp | 加工装置 |
-
2015
- 2015-04-08 JP JP2015078838A patent/JP6486752B2/ja active Active
-
2016
- 2016-02-25 TW TW105105706A patent/TWI681844B/zh active
- 2016-03-23 KR KR1020160034618A patent/KR102315293B1/ko active IP Right Grant
- 2016-03-31 CN CN201610196336.9A patent/CN106041716B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002187061A (ja) * | 2000-12-22 | 2002-07-02 | Matsushita Electric Ind Co Ltd | 研磨温度測定方法、研磨方法、ワーク保持機構および研磨装置 |
JP2006216895A (ja) * | 2005-02-07 | 2006-08-17 | Disco Abrasive Syst Ltd | 半導体ウエーハの研磨装置 |
JP2014103213A (ja) * | 2012-11-19 | 2014-06-05 | Tokyo Seimitsu Co Ltd | 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6486752B2 (ja) | 2019-03-20 |
CN106041716A (zh) | 2016-10-26 |
JP2016198830A (ja) | 2016-12-01 |
TWI681844B (zh) | 2020-01-11 |
CN106041716B (zh) | 2019-06-14 |
KR20160120656A (ko) | 2016-10-18 |
TW201641214A (zh) | 2016-12-01 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |