KR102315293B1 - 건식 연마 장치 - Google Patents

건식 연마 장치 Download PDF

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Publication number
KR102315293B1
KR102315293B1 KR1020160034618A KR20160034618A KR102315293B1 KR 102315293 B1 KR102315293 B1 KR 102315293B1 KR 1020160034618 A KR1020160034618 A KR 1020160034618A KR 20160034618 A KR20160034618 A KR 20160034618A KR 102315293 B1 KR102315293 B1 KR 102315293B1
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KR
South Korea
Prior art keywords
polishing
wafer
hole
air
polishing pad
Prior art date
Application number
KR1020160034618A
Other languages
English (en)
Korean (ko)
Other versions
KR20160120656A (ko
Inventor
고이치 오히노
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20160120656A publication Critical patent/KR20160120656A/ko
Application granted granted Critical
Publication of KR102315293B1 publication Critical patent/KR102315293B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
KR1020160034618A 2015-04-08 2016-03-23 건식 연마 장치 KR102315293B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015078838A JP6486752B2 (ja) 2015-04-08 2015-04-08 乾式研磨装置
JPJP-P-2015-078838 2015-04-08

Publications (2)

Publication Number Publication Date
KR20160120656A KR20160120656A (ko) 2016-10-18
KR102315293B1 true KR102315293B1 (ko) 2021-10-19

Family

ID=57244497

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160034618A KR102315293B1 (ko) 2015-04-08 2016-03-23 건식 연마 장치

Country Status (4)

Country Link
JP (1) JP6486752B2 (zh)
KR (1) KR102315293B1 (zh)
CN (1) CN106041716B (zh)
TW (1) TWI681844B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190085889A (ko) 2019-06-28 2019-07-19 신원제 태양광 패널 청소기
CN112621553A (zh) * 2020-12-15 2021-04-09 深圳市燃气集团股份有限公司 一种维修万向节的工具

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002187061A (ja) * 2000-12-22 2002-07-02 Matsushita Electric Ind Co Ltd 研磨温度測定方法、研磨方法、ワーク保持機構および研磨装置
JP2006216895A (ja) * 2005-02-07 2006-08-17 Disco Abrasive Syst Ltd 半導体ウエーハの研磨装置
JP2014103213A (ja) * 2012-11-19 2014-06-05 Tokyo Seimitsu Co Ltd 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4754870B2 (ja) 2005-05-10 2011-08-24 株式会社ディスコ 研磨装置
JP5464820B2 (ja) * 2007-10-29 2014-04-09 株式会社荏原製作所 研磨装置
JP2013141738A (ja) * 2012-01-12 2013-07-22 Disco Corp 加工装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002187061A (ja) * 2000-12-22 2002-07-02 Matsushita Electric Ind Co Ltd 研磨温度測定方法、研磨方法、ワーク保持機構および研磨装置
JP2006216895A (ja) * 2005-02-07 2006-08-17 Disco Abrasive Syst Ltd 半導体ウエーハの研磨装置
JP2014103213A (ja) * 2012-11-19 2014-06-05 Tokyo Seimitsu Co Ltd 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置

Also Published As

Publication number Publication date
JP6486752B2 (ja) 2019-03-20
CN106041716A (zh) 2016-10-26
JP2016198830A (ja) 2016-12-01
TWI681844B (zh) 2020-01-11
CN106041716B (zh) 2019-06-14
KR20160120656A (ko) 2016-10-18
TW201641214A (zh) 2016-12-01

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