KR102283498B1 - 개선된 결정화도를 갖는 유기 페로브스카이트 재료의 층을 제조하는 방법 - Google Patents

개선된 결정화도를 갖는 유기 페로브스카이트 재료의 층을 제조하는 방법 Download PDF

Info

Publication number
KR102283498B1
KR102283498B1 KR1020177006404A KR20177006404A KR102283498B1 KR 102283498 B1 KR102283498 B1 KR 102283498B1 KR 1020177006404 A KR1020177006404 A KR 1020177006404A KR 20177006404 A KR20177006404 A KR 20177006404A KR 102283498 B1 KR102283498 B1 KR 102283498B1
Authority
KR
South Korea
Prior art keywords
cation
anion
compound
delete delete
unsubstituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177006404A
Other languages
English (en)
Korean (ko)
Other versions
KR20170041832A (ko
Inventor
헨리 제임스 스네이스
웨이 장
마이클 살리바
Original Assignee
옥스포드 유니버시티 이노베이션 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 옥스포드 유니버시티 이노베이션 리미티드 filed Critical 옥스포드 유니버시티 이노베이션 리미티드
Publication of KR20170041832A publication Critical patent/KR20170041832A/ko
Application granted granted Critical
Publication of KR102283498B1 publication Critical patent/KR102283498B1/ko
Assigned to 옥스퍼드 포토발테익스 리미티드 reassignment 옥스퍼드 포토발테익스 리미티드 권리의 전부이전등록 Assignors: 옥스포드 유니버시티 이노베이션 리미티드
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L51/422
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08Copper compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22Tin compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/24Lead compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2004Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009Solid electrolytes
    • H01L51/0003
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311Purifying organic semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
KR1020177006404A 2014-08-08 2015-08-07 개선된 결정화도를 갖는 유기 페로브스카이트 재료의 층을 제조하는 방법 Active KR102283498B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1414110.5 2014-08-08
GBGB1414110.5A GB201414110D0 (en) 2014-08-08 2014-08-08 Thin film production
PCT/GB2015/052293 WO2016020699A1 (en) 2014-08-08 2015-08-07 Process for producing a layer of organic perovskite material with improved crystallinity

Publications (2)

Publication Number Publication Date
KR20170041832A KR20170041832A (ko) 2017-04-17
KR102283498B1 true KR102283498B1 (ko) 2021-07-29

Family

ID=51629534

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177006404A Active KR102283498B1 (ko) 2014-08-08 2015-08-07 개선된 결정화도를 갖는 유기 페로브스카이트 재료의 층을 제조하는 방법

Country Status (10)

Country Link
US (1) US10622162B2 (https=)
EP (1) EP3178121B1 (https=)
JP (1) JP6660373B2 (https=)
KR (1) KR102283498B1 (https=)
CN (1) CN106796988B (https=)
ES (1) ES2728516T3 (https=)
GB (1) GB201414110D0 (https=)
PL (1) PL3178121T3 (https=)
TR (1) TR201906638T4 (https=)
WO (1) WO2016020699A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230080896A (ko) 2021-11-30 2023-06-07 경희대학교 산학협력단 결함을 이용한 페로브스카이트 구조 산화물의 결정화 방법

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016208579A1 (ja) * 2015-06-26 2016-12-29 富士フイルム株式会社 光電変換素子、太陽電池、金属塩組成物および光電変換素子の製造方法
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
GB201604050D0 (en) 2016-03-09 2016-04-20 Isis Innovation A/M/X material production process with alkylamine
EP3430655A2 (en) * 2016-03-18 2019-01-23 Ecole Polytechnique Federale de Lausanne (EPFL) High efficiency large area perovskite solar cells and process for producing the same
JP6775977B2 (ja) * 2016-03-22 2020-10-28 キヤノン株式会社 光電変換装置、及び撮像システム
JP6473774B2 (ja) * 2016-06-20 2019-02-20 旭化成株式会社 組成物
EP3272757A1 (en) * 2016-07-21 2018-01-24 Ecole Polytechnique Fédérale de Lausanne (EPFL) Mixed cation perovskite solid state solar cell and fabrication thereof
CN106206956B (zh) * 2016-09-07 2018-12-04 中国工程物理研究院材料研究所 一种含铜离子钙钛矿薄膜的制备方法
WO2018047066A1 (en) * 2016-09-08 2018-03-15 King Abdullah University Of Science And Technology Organo-lead halide perovskites thin single crystals
JP7094668B2 (ja) * 2016-09-21 2022-07-04 株式会社東芝 太陽電池モジュール及び太陽光発電システム
CN106590629B (zh) * 2016-11-23 2018-11-13 厦门华厦学院 一种提高MAPbBr3钙钛矿量子点稳定性的方法
CN106816532B (zh) * 2017-01-13 2019-08-27 浙江大学 基于有机-无机杂化钙钛矿取向结晶薄膜的太阳电池
CN106803538B (zh) * 2017-01-13 2019-08-23 浙江大学 垂直取向结构的二维有机-无机杂化钙钛矿薄膜材料
JP6378383B1 (ja) * 2017-03-07 2018-08-22 株式会社東芝 半導体素子およびその製造方法
CN106684247A (zh) * 2017-03-15 2017-05-17 中南大学 一种钙钛矿太阳能电池及其制备方法
CN107275492B (zh) * 2017-05-19 2020-07-03 北京科技大学 引入非溶质基溴化物添加剂制备混合卤素钙钛矿的方法
CN109244250B (zh) * 2017-07-11 2023-09-22 松下控股株式会社 太阳能电池模块
CN107369768B (zh) * 2017-08-07 2019-09-27 电子科技大学 一种基于新有机铅源的钙钛矿太阳能电池的制备方法
WO2019050906A1 (en) * 2017-09-06 2019-03-14 Alliance For Sustainable Energy, Llc ORGANIC-INORGANIC PEROVSKITE MATERIALS AND METHODS OF MAKING SAME
CN108365102B (zh) * 2018-02-22 2020-03-27 南京工业大学 一种稳定高效二维层状钙钛矿太阳能电池及其制备方法
WO2019195194A1 (en) * 2018-04-02 2019-10-10 The University Of North Carolina At Chapel Hill Perovskite compositions comprising mixed solvent systems
CN112334758A (zh) * 2018-04-27 2021-02-05 华盛顿大学 金属卤化物半导体光学和电子装置及其制造方法
CN109065727A (zh) * 2018-07-24 2018-12-21 北京科技大学 一种钙钛矿太阳能电池的制备方法
CN109052455B (zh) * 2018-10-11 2020-12-15 南京邮电大学 一种无毒稳定钙钛矿的制备方法
GB201817167D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
US12152935B2 (en) * 2019-02-11 2024-11-26 Rensselaer Polytechnic Institute Hybrid fiber for detection of UV light
CN110085744B (zh) * 2019-04-10 2021-01-26 北京大学 有效固定有机阳离子的钙钛矿薄膜及太阳能电池的制备
CN112151677A (zh) * 2019-06-29 2020-12-29 杭州纤纳光电科技有限公司 一种钙钛矿薄膜的制备方法及其钙钛矿太阳能电池
CN110330435B (zh) * 2019-07-12 2020-08-07 中国科学院高能物理研究所 半导体材料、包含它的光电转换器件及制备方法
JP7401070B2 (ja) * 2019-08-09 2023-12-19 三菱ケミカル株式会社 ペロブスカイト膜の製造方法、及び光電変換素子の製造方法
CN110592668A (zh) * 2019-10-12 2019-12-20 浙江工业大学 一种六角形碘化铅微纳单晶板的液相合成方法
JP2023515477A (ja) 2020-02-19 2023-04-13 ファースト・ソーラー・インコーポレーテッド 蒸気搬送堆積によるペロブスカイトデバイス加工の方法
CN112086535B (zh) * 2020-08-20 2022-08-09 隆基绿能科技股份有限公司 一种叠层电池
KR20230068438A (ko) 2020-09-22 2023-05-17 케일룩스 코포레이션 통합 탠덤 태양광 모듈 제작을 위한 방법 및 소자
CN114530560B (zh) * 2022-01-25 2025-06-10 哈尔滨师范大学 一种钙钛矿单晶光电探测器及其制备方法
CN114695667B (zh) * 2022-03-22 2023-04-07 电子科技大学 一种埋底界面处理制备高效柔性钙钛矿太阳电池的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014154498A (ja) 2013-02-13 2014-08-25 Nsk Ltd 光電変換素子
WO2015099412A1 (ko) 2013-12-23 2015-07-02 한국화학연구원 무/유기 하이브리드 페로브스카이트 화합물 전구물질

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656329A (en) 1995-03-13 1997-08-12 Texas Instruments Incorporated Chemical vapor deposition of metal oxide films through ester elimination reactions
US5894064A (en) 1995-03-13 1999-04-13 Hampden-Smith; Mark Solution routes to metal oxide films through ester elimination reactions
US6429318B1 (en) * 2000-02-07 2002-08-06 International Business Machines Corporaiton Layered organic-inorganic perovskites having metal-deficient inorganic frameworks
KR100657891B1 (ko) 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
ES2707296T3 (es) 2012-09-18 2019-04-03 Univ Oxford Innovation Ltd Dispositivo optoelectrónico
CN105210204A (zh) * 2012-12-20 2015-12-30 耶路撒冷希伯来大学伊森姆研究发展有限公司 钙钛矿肖特基型太阳能电池
GB201310854D0 (en) 2013-06-18 2013-07-31 Isis Innovation Photoactive layer production process
JP6106131B2 (ja) * 2013-07-31 2017-03-29 富士フイルム株式会社 光電変換素子および太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014154498A (ja) 2013-02-13 2014-08-25 Nsk Ltd 光電変換素子
WO2015099412A1 (ko) 2013-12-23 2015-07-02 한국화학연구원 무/유기 하이브리드 페로브스카이트 화합물 전구물질

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230080896A (ko) 2021-11-30 2023-06-07 경희대학교 산학협력단 결함을 이용한 페로브스카이트 구조 산화물의 결정화 방법

Also Published As

Publication number Publication date
CN106796988A (zh) 2017-05-31
EP3178121A1 (en) 2017-06-14
JP6660373B2 (ja) 2020-03-11
PL3178121T3 (pl) 2019-08-30
TR201906638T4 (tr) 2019-05-21
GB201414110D0 (en) 2014-09-24
US20170229249A1 (en) 2017-08-10
US10622162B2 (en) 2020-04-14
CN106796988B (zh) 2019-04-23
WO2016020699A1 (en) 2016-02-11
ES2728516T3 (es) 2019-10-25
JP2017530546A (ja) 2017-10-12
KR20170041832A (ko) 2017-04-17
EP3178121B1 (en) 2019-03-13

Similar Documents

Publication Publication Date Title
KR102283498B1 (ko) 개선된 결정화도를 갖는 유기 페로브스카이트 재료의 층을 제조하는 방법
JP7681336B2 (ja) 光電子素子
KR102360104B1 (ko) 2 단계 증착 공정
KR102363283B1 (ko) 알킬아민을 사용한 a/m/x 재료의 제조 방법
JP7166613B2 (ja) 高効率大面積ペロブスカイト太陽電池及びその製造方法
HK40112791A (en) Optoelectronic device
HK40082705A (en) Optoelectronic device

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R11 Change to the name of applicant or owner or transfer of ownership requested

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R11-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

R14 Transfer of ownership recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R14-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)