JP6775977B2 - 光電変換装置、及び撮像システム - Google Patents
光電変換装置、及び撮像システム Download PDFInfo
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- JP6775977B2 JP6775977B2 JP2016057546A JP2016057546A JP6775977B2 JP 6775977 B2 JP6775977 B2 JP 6775977B2 JP 2016057546 A JP2016057546 A JP 2016057546A JP 2016057546 A JP2016057546 A JP 2016057546A JP 6775977 B2 JP6775977 B2 JP 6775977B2
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- 239000000463 material Substances 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 24
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- 239000010410 layer Substances 0.000 description 74
- 238000000034 method Methods 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
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- 229910052782 aluminium Inorganic materials 0.000 description 5
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- 239000004020 conductor Substances 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
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- 125000002091 cationic group Chemical group 0.000 description 1
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- 238000007772 electroless plating Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/74—Circuitry for scanning or addressing the pixel array
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Multimedia (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
本発明に係る光電変換装置の実施例について図面を用いて説明する。図2は本実施例の光電変換装置1の断面構造図である。本実施例は、複数の画素が2次元アレイ状に配置されている。
本実施形態について図面を用いて説明する。図4は本実施形態の光電変換装置1の断面構造の模式図である。本実施形態は、複数の画素が2次元アレイ状に配置されている。図4においては、そのうちの2つの画素が図示されている。
8 電荷蓄積部
5 半導体基板
11 光電変換膜
12 上部電極
13 接続配線
15 給電配線
16 配線層
17 保護層
18 カラーフィルタ
19 マイクロレンズ
6 絶縁層
7 凹部
領域A 凹部の側面領域
領域B 凹部の側面と上面が交差する頂点領域
光線C 隣の画素からの混色光
Claims (10)
- 半導体基板と、前記半導体基板に設けられた電荷蓄積部と、光電変換層および上部電極をこの順で有し、複数の前記光電変換層を前記基板の面内に有する光電変換装置であって、
前記複数の光電変換層の間に配置され、接続配線が設けられている絶縁層をさらに有し、
前記接続配線の側面と、前記上部電極と、が電気的に接続されていることを特徴とする光電変換装置。 - 前記電荷蓄積部と前記光電変換層とが接していることを特徴とする請求項1に記載の光電変換装置。
- 前記電荷蓄積部と前記光電変換層の間に下部電極が配置されることを特徴とする請求項1または2に記載の光電変換装置。
- 前記絶縁層の側面は、前記半導体基板に対して傾斜して配置されていることを特徴とする請求項1乃至3のいずれか一項に記載の光電変換装置。
- 前記光電変換層が、有機材料、又は有機・無機ハイブリッド材料を有することを特徴とする特徴とする請求項1乃至3のいずれか一項に記載の光電変換装置。
- 前記半導体基板の主面に対して垂直方向から見た場合に、前記接続配線が前記光電変換層を囲むように配置されていることを特徴とする請求項1乃至5のいずれか一項に記載の光電変換装置。
- 前記光電変換層とは異なる波長の光を光電変換する別種の光電変換層をさらに有し、
前記別種の光電変換層は、前記光電変換層と、前記上部電極との間に配置されていることを特徴とする請求項1乃至6のいずれか一項に記載の光電変換装置。 - 請求項1乃至7のいずれか一項に記載の光電変換装置と、前記光電変換装置に接続されている読み出し回路と、前記読み出し回路から転送される情報により、信号処理を行う信号処理回路とを有することを特徴とする撮像素子。
- 請求項8に記載の撮像素子と、複数のレンズとを有し、前記撮像素子は前記複数のレンズを通過した光を受光することを特徴とする撮像装置。
- 外部からの情報を受信する受信部または外部へ情報を送信する送信部をさらに有することを特徴とする請求項9に記載の撮像装置。
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JP2016057546A JP6775977B2 (ja) | 2016-03-22 | 2016-03-22 | 光電変換装置、及び撮像システム |
US15/462,589 US10757353B2 (en) | 2016-03-22 | 2017-03-17 | Photoelectric conversion apparatus and imaging system |
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JP7194918B2 (ja) * | 2018-03-08 | 2022-12-23 | パナソニックIpマネジメント株式会社 | 固体撮像素子 |
KR20230022331A (ko) | 2021-08-05 | 2023-02-15 | 삼성전자주식회사 | 이미지 센서 |
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GB2265253A (en) * | 1992-03-18 | 1993-09-22 | Philips Electronics Uk Ltd | Infrared detector devices and their manufacture using directional etching to define connections |
JPH08316450A (ja) * | 1995-05-17 | 1996-11-29 | Hitachi Ltd | 積層型固体撮像素子及びその製造方法 |
US7875949B2 (en) * | 2008-02-28 | 2011-01-25 | Visera Technologies Company Limited | Image sensor device with submicron structure |
JP2010010478A (ja) * | 2008-06-27 | 2010-01-14 | Fujifilm Corp | 光電変換装置、光電変換装置の製造方法及び撮像装置 |
JP2012039004A (ja) * | 2010-08-10 | 2012-02-23 | Sony Corp | 光電変換素子およびその製造方法 |
JP5757096B2 (ja) * | 2011-01-31 | 2015-07-29 | ソニー株式会社 | 放射線撮像装置および放射線撮像表示システム |
JP2012209421A (ja) * | 2011-03-30 | 2012-10-25 | Sony Corp | 固体撮像装置及び電子機器 |
WO2013134948A1 (en) * | 2012-03-16 | 2013-09-19 | Telefonaktiebolaget L M Ericsson (Publ) | Methods for reliable reception of harq feedback information in heterogeneous deployments |
CN104247021B (zh) * | 2012-05-01 | 2017-07-14 | 索尼半导体解决方案公司 | 固态摄像装置及其制造方法以及电子设备 |
JPWO2014024581A1 (ja) * | 2012-08-09 | 2016-07-25 | ソニー株式会社 | 光電変換素子、撮像装置及び光センサ |
JP2014127545A (ja) * | 2012-12-26 | 2014-07-07 | Sony Corp | 固体撮像素子およびこれを備えた固体撮像装置 |
JP6136663B2 (ja) * | 2013-07-04 | 2017-05-31 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
JP2015119154A (ja) * | 2013-12-20 | 2015-06-25 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、及び電子機器 |
WO2016002576A1 (ja) * | 2014-07-03 | 2016-01-07 | ソニー株式会社 | 固体撮像素子、および電子装置 |
GB201414110D0 (en) * | 2014-08-08 | 2014-09-24 | Isis Innovation | Thin film production |
US9905837B2 (en) * | 2014-08-21 | 2018-02-27 | Sony Corporation | Imaging element, solid-state imaging device, and electronic device |
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JP2017174903A (ja) | 2017-09-28 |
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