CN106796988B - 制造结晶度改善的有机钙钛矿材料层的方法 - Google Patents

制造结晶度改善的有机钙钛矿材料层的方法 Download PDF

Info

Publication number
CN106796988B
CN106796988B CN201580042705.2A CN201580042705A CN106796988B CN 106796988 B CN106796988 B CN 106796988B CN 201580042705 A CN201580042705 A CN 201580042705A CN 106796988 B CN106796988 B CN 106796988B
Authority
CN
China
Prior art keywords
cation
anion
compound
precursor compound
unsubstituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580042705.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN106796988A (zh
Inventor
亨利·詹姆斯·施耐德
张伟
迈克尔·萨利巴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Photovoltaics Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Publication of CN106796988A publication Critical patent/CN106796988A/zh
Application granted granted Critical
Publication of CN106796988B publication Critical patent/CN106796988B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/24—Lead compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
CN201580042705.2A 2014-08-08 2015-08-07 制造结晶度改善的有机钙钛矿材料层的方法 Active CN106796988B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1414110.5 2014-08-08
GBGB1414110.5A GB201414110D0 (en) 2014-08-08 2014-08-08 Thin film production
PCT/GB2015/052293 WO2016020699A1 (en) 2014-08-08 2015-08-07 Process for producing a layer of organic perovskite material with improved crystallinity

Publications (2)

Publication Number Publication Date
CN106796988A CN106796988A (zh) 2017-05-31
CN106796988B true CN106796988B (zh) 2019-04-23

Family

ID=51629534

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580042705.2A Active CN106796988B (zh) 2014-08-08 2015-08-07 制造结晶度改善的有机钙钛矿材料层的方法

Country Status (10)

Country Link
US (1) US10622162B2 (https=)
EP (1) EP3178121B1 (https=)
JP (1) JP6660373B2 (https=)
KR (1) KR102283498B1 (https=)
CN (1) CN106796988B (https=)
ES (1) ES2728516T3 (https=)
GB (1) GB201414110D0 (https=)
PL (1) PL3178121T3 (https=)
TR (1) TR201906638T4 (https=)
WO (1) WO2016020699A1 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016208579A1 (ja) * 2015-06-26 2016-12-29 富士フイルム株式会社 光電変換素子、太陽電池、金属塩組成物および光電変換素子の製造方法
GB201520972D0 (en) 2015-11-27 2016-01-13 Isis Innovation Mixed cation perovskite
GB201604050D0 (en) 2016-03-09 2016-04-20 Isis Innovation A/M/X material production process with alkylamine
EP3430655A2 (en) * 2016-03-18 2019-01-23 Ecole Polytechnique Federale de Lausanne (EPFL) High efficiency large area perovskite solar cells and process for producing the same
JP6775977B2 (ja) * 2016-03-22 2020-10-28 キヤノン株式会社 光電変換装置、及び撮像システム
JP6473774B2 (ja) * 2016-06-20 2019-02-20 旭化成株式会社 組成物
EP3272757A1 (en) * 2016-07-21 2018-01-24 Ecole Polytechnique Fédérale de Lausanne (EPFL) Mixed cation perovskite solid state solar cell and fabrication thereof
CN106206956B (zh) * 2016-09-07 2018-12-04 中国工程物理研究院材料研究所 一种含铜离子钙钛矿薄膜的制备方法
WO2018047066A1 (en) * 2016-09-08 2018-03-15 King Abdullah University Of Science And Technology Organo-lead halide perovskites thin single crystals
JP7094668B2 (ja) * 2016-09-21 2022-07-04 株式会社東芝 太陽電池モジュール及び太陽光発電システム
CN106590629B (zh) * 2016-11-23 2018-11-13 厦门华厦学院 一种提高MAPbBr3钙钛矿量子点稳定性的方法
CN106816532B (zh) * 2017-01-13 2019-08-27 浙江大学 基于有机-无机杂化钙钛矿取向结晶薄膜的太阳电池
CN106803538B (zh) * 2017-01-13 2019-08-23 浙江大学 垂直取向结构的二维有机-无机杂化钙钛矿薄膜材料
JP6378383B1 (ja) * 2017-03-07 2018-08-22 株式会社東芝 半導体素子およびその製造方法
CN106684247A (zh) * 2017-03-15 2017-05-17 中南大学 一种钙钛矿太阳能电池及其制备方法
CN107275492B (zh) * 2017-05-19 2020-07-03 北京科技大学 引入非溶质基溴化物添加剂制备混合卤素钙钛矿的方法
CN109244250B (zh) * 2017-07-11 2023-09-22 松下控股株式会社 太阳能电池模块
CN107369768B (zh) * 2017-08-07 2019-09-27 电子科技大学 一种基于新有机铅源的钙钛矿太阳能电池的制备方法
WO2019050906A1 (en) * 2017-09-06 2019-03-14 Alliance For Sustainable Energy, Llc ORGANIC-INORGANIC PEROVSKITE MATERIALS AND METHODS OF MAKING SAME
CN108365102B (zh) * 2018-02-22 2020-03-27 南京工业大学 一种稳定高效二维层状钙钛矿太阳能电池及其制备方法
WO2019195194A1 (en) * 2018-04-02 2019-10-10 The University Of North Carolina At Chapel Hill Perovskite compositions comprising mixed solvent systems
CN112334758A (zh) * 2018-04-27 2021-02-05 华盛顿大学 金属卤化物半导体光学和电子装置及其制造方法
CN109065727A (zh) * 2018-07-24 2018-12-21 北京科技大学 一种钙钛矿太阳能电池的制备方法
CN109052455B (zh) * 2018-10-11 2020-12-15 南京邮电大学 一种无毒稳定钙钛矿的制备方法
GB201817167D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
US12152935B2 (en) * 2019-02-11 2024-11-26 Rensselaer Polytechnic Institute Hybrid fiber for detection of UV light
CN110085744B (zh) * 2019-04-10 2021-01-26 北京大学 有效固定有机阳离子的钙钛矿薄膜及太阳能电池的制备
CN112151677A (zh) * 2019-06-29 2020-12-29 杭州纤纳光电科技有限公司 一种钙钛矿薄膜的制备方法及其钙钛矿太阳能电池
CN110330435B (zh) * 2019-07-12 2020-08-07 中国科学院高能物理研究所 半导体材料、包含它的光电转换器件及制备方法
JP7401070B2 (ja) * 2019-08-09 2023-12-19 三菱ケミカル株式会社 ペロブスカイト膜の製造方法、及び光電変換素子の製造方法
CN110592668A (zh) * 2019-10-12 2019-12-20 浙江工业大学 一种六角形碘化铅微纳单晶板的液相合成方法
JP2023515477A (ja) 2020-02-19 2023-04-13 ファースト・ソーラー・インコーポレーテッド 蒸気搬送堆積によるペロブスカイトデバイス加工の方法
CN112086535B (zh) * 2020-08-20 2022-08-09 隆基绿能科技股份有限公司 一种叠层电池
KR20230068438A (ko) 2020-09-22 2023-05-17 케일룩스 코포레이션 통합 탠덤 태양광 모듈 제작을 위한 방법 및 소자
KR20230080896A (ko) 2021-11-30 2023-06-07 경희대학교 산학협력단 결함을 이용한 페로브스카이트 구조 산화물의 결정화 방법
CN114530560B (zh) * 2022-01-25 2025-06-10 哈尔滨师范大学 一种钙钛矿单晶光电探测器及其制备方法
CN114695667B (zh) * 2022-03-22 2023-04-07 电子科技大学 一种埋底界面处理制备高效柔性钙钛矿太阳电池的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1316427A (zh) * 2000-02-07 2001-10-10 国际商业机器公司 具有金属缺陷无机构架的层状有机－无机钙钛矿
WO2014045021A1 (en) * 2012-09-18 2014-03-27 Isis Innovation Limited Optoelectronic device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656329A (en) 1995-03-13 1997-08-12 Texas Instruments Incorporated Chemical vapor deposition of metal oxide films through ester elimination reactions
US5894064A (en) 1995-03-13 1999-04-13 Hampden-Smith; Mark Solution routes to metal oxide films through ester elimination reactions
KR100657891B1 (ko) 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
CN105210204A (zh) * 2012-12-20 2015-12-30 耶路撒冷希伯来大学伊森姆研究发展有限公司 钙钛矿肖特基型太阳能电池
JP2014154498A (ja) * 2013-02-13 2014-08-25 Nsk Ltd 光電変換素子
GB201310854D0 (en) 2013-06-18 2013-07-31 Isis Innovation Photoactive layer production process
JP6106131B2 (ja) * 2013-07-31 2017-03-29 富士フイルム株式会社 光電変換素子および太陽電池
WO2015099412A1 (ko) * 2013-12-23 2015-07-02 한국화학연구원 무/유기 하이브리드 페로브스카이트 화합물 전구물질

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1316427A (zh) * 2000-02-07 2001-10-10 国际商业机器公司 具有金属缺陷无机构架的层状有机－无机钙钛矿
WO2014045021A1 (en) * 2012-09-18 2014-03-27 Isis Innovation Limited Optoelectronic device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
《The ordered phase of methylammonium lead chloride CH3ND3PbCl3》;Lisheng Chi, et al.;《Journal of Solid State Chemistry》;20050316;第178卷;1376-1385 *

Also Published As

Publication number Publication date
CN106796988A (zh) 2017-05-31
EP3178121A1 (en) 2017-06-14
JP6660373B2 (ja) 2020-03-11
PL3178121T3 (pl) 2019-08-30
TR201906638T4 (tr) 2019-05-21
GB201414110D0 (en) 2014-09-24
US20170229249A1 (en) 2017-08-10
US10622162B2 (en) 2020-04-14
WO2016020699A1 (en) 2016-02-11
KR102283498B1 (ko) 2021-07-29
ES2728516T3 (es) 2019-10-25
JP2017530546A (ja) 2017-10-12
KR20170041832A (ko) 2017-04-17
EP3178121B1 (en) 2019-03-13

Similar Documents

Publication Publication Date Title
CN106796988B (zh) 制造结晶度改善的有机钙钛矿材料层的方法
US20220393048A1 (en) Optoelectronic device
US20240043282A1 (en) Double perovskite
Prochowicz et al. Engineering of perovskite materials based on formamidinium and cesium hybridization for high-efficiency solar cells
Zhang et al. All-ambient processed binary CsPbBr3–CsPb2Br5 perovskites with synergistic enhancement for high-efficiency Cs–Pb–Br-based solar cells
KR102363283B1 (ko) 알킬아민을 사용한 a/m/x 재료의 제조 방법
JP7166613B2 (ja) 高効率大面積ペロブスカイト太陽電池及びその製造方法
Luo et al. Synthesis, optical properties, and exciton dynamics of organolead bromide perovskite nanocrystals
CN109312464A (zh) 制备卤化物钙钛矿和钙钛矿相关材料的方法
WO2020109787A1 (en) Long-term stable optoelectronic device
EP3613089B1 (en) Semiconductor device comprising halopalladate
Hettiarachchi Organometal halide perovskite solar absorbers and ferroelectric nanocomposites for harvesting solar energy
ADJOKATSE Morphology Optimization and Photophysical Properties of Methylammonium Lead Triiodide (MAPbI3) Thin Films

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20250409

Address after: oxford

Patentee after: OXFORD PHOTOVOLTAICS LTD.

Country or region after: Britain

Address before: oxford

Patentee before: OXFORD UNIVERSITY INNOVATION Ltd.

Country or region before: Britain