JP6660373B2 - 結晶化度を向上させた有機ペロブスカイト材料の層を製造する方法 - Google Patents
結晶化度を向上させた有機ペロブスカイト材料の層を製造する方法 Download PDFInfo
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- JP6660373B2 JP6660373B2 JP2017506736A JP2017506736A JP6660373B2 JP 6660373 B2 JP6660373 B2 JP 6660373B2 JP 2017506736 A JP2017506736 A JP 2017506736A JP 2017506736 A JP2017506736 A JP 2017506736A JP 6660373 B2 JP6660373 B2 JP 6660373B2
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
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- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/24—Lead compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/311—Purifying organic semiconductor materials
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photovoltaic Devices (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1414110.5 | 2014-08-08 | ||
| GBGB1414110.5A GB201414110D0 (en) | 2014-08-08 | 2014-08-08 | Thin film production |
| PCT/GB2015/052293 WO2016020699A1 (en) | 2014-08-08 | 2015-08-07 | Process for producing a layer of organic perovskite material with improved crystallinity |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017530546A JP2017530546A (ja) | 2017-10-12 |
| JP2017530546A5 JP2017530546A5 (https=) | 2018-09-13 |
| JP6660373B2 true JP6660373B2 (ja) | 2020-03-11 |
Family
ID=51629534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017506736A Active JP6660373B2 (ja) | 2014-08-08 | 2015-08-07 | 結晶化度を向上させた有機ペロブスカイト材料の層を製造する方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US10622162B2 (https=) |
| EP (1) | EP3178121B1 (https=) |
| JP (1) | JP6660373B2 (https=) |
| KR (1) | KR102283498B1 (https=) |
| CN (1) | CN106796988B (https=) |
| ES (1) | ES2728516T3 (https=) |
| GB (1) | GB201414110D0 (https=) |
| PL (1) | PL3178121T3 (https=) |
| TR (1) | TR201906638T4 (https=) |
| WO (1) | WO2016020699A1 (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016208579A1 (ja) * | 2015-06-26 | 2016-12-29 | 富士フイルム株式会社 | 光電変換素子、太陽電池、金属塩組成物および光電変換素子の製造方法 |
| GB201520972D0 (en) | 2015-11-27 | 2016-01-13 | Isis Innovation | Mixed cation perovskite |
| GB201604050D0 (en) | 2016-03-09 | 2016-04-20 | Isis Innovation | A/M/X material production process with alkylamine |
| EP3430655A2 (en) * | 2016-03-18 | 2019-01-23 | Ecole Polytechnique Federale de Lausanne (EPFL) | High efficiency large area perovskite solar cells and process for producing the same |
| JP6775977B2 (ja) * | 2016-03-22 | 2020-10-28 | キヤノン株式会社 | 光電変換装置、及び撮像システム |
| JP6473774B2 (ja) * | 2016-06-20 | 2019-02-20 | 旭化成株式会社 | 組成物 |
| EP3272757A1 (en) * | 2016-07-21 | 2018-01-24 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Mixed cation perovskite solid state solar cell and fabrication thereof |
| CN106206956B (zh) * | 2016-09-07 | 2018-12-04 | 中国工程物理研究院材料研究所 | 一种含铜离子钙钛矿薄膜的制备方法 |
| WO2018047066A1 (en) * | 2016-09-08 | 2018-03-15 | King Abdullah University Of Science And Technology | Organo-lead halide perovskites thin single crystals |
| JP7094668B2 (ja) * | 2016-09-21 | 2022-07-04 | 株式会社東芝 | 太陽電池モジュール及び太陽光発電システム |
| CN106590629B (zh) * | 2016-11-23 | 2018-11-13 | 厦门华厦学院 | 一种提高MAPbBr3钙钛矿量子点稳定性的方法 |
| CN106816532B (zh) * | 2017-01-13 | 2019-08-27 | 浙江大学 | 基于有机-无机杂化钙钛矿取向结晶薄膜的太阳电池 |
| CN106803538B (zh) * | 2017-01-13 | 2019-08-23 | 浙江大学 | 垂直取向结构的二维有机-无机杂化钙钛矿薄膜材料 |
| JP6378383B1 (ja) * | 2017-03-07 | 2018-08-22 | 株式会社東芝 | 半導体素子およびその製造方法 |
| CN106684247A (zh) * | 2017-03-15 | 2017-05-17 | 中南大学 | 一种钙钛矿太阳能电池及其制备方法 |
| CN107275492B (zh) * | 2017-05-19 | 2020-07-03 | 北京科技大学 | 引入非溶质基溴化物添加剂制备混合卤素钙钛矿的方法 |
| CN109244250B (zh) * | 2017-07-11 | 2023-09-22 | 松下控股株式会社 | 太阳能电池模块 |
| CN107369768B (zh) * | 2017-08-07 | 2019-09-27 | 电子科技大学 | 一种基于新有机铅源的钙钛矿太阳能电池的制备方法 |
| WO2019050906A1 (en) * | 2017-09-06 | 2019-03-14 | Alliance For Sustainable Energy, Llc | ORGANIC-INORGANIC PEROVSKITE MATERIALS AND METHODS OF MAKING SAME |
| CN108365102B (zh) * | 2018-02-22 | 2020-03-27 | 南京工业大学 | 一种稳定高效二维层状钙钛矿太阳能电池及其制备方法 |
| WO2019195194A1 (en) * | 2018-04-02 | 2019-10-10 | The University Of North Carolina At Chapel Hill | Perovskite compositions comprising mixed solvent systems |
| CN112334758A (zh) * | 2018-04-27 | 2021-02-05 | 华盛顿大学 | 金属卤化物半导体光学和电子装置及其制造方法 |
| CN109065727A (zh) * | 2018-07-24 | 2018-12-21 | 北京科技大学 | 一种钙钛矿太阳能电池的制备方法 |
| CN109052455B (zh) * | 2018-10-11 | 2020-12-15 | 南京邮电大学 | 一种无毒稳定钙钛矿的制备方法 |
| GB201817167D0 (en) * | 2018-10-22 | 2018-12-05 | Univ Oxford Innovation Ltd | Process for producing a layer with mixed solvent system |
| GB201820427D0 (en) | 2018-12-14 | 2019-01-30 | Univ Oxford Innovation Ltd | Device interlayer |
| US12152935B2 (en) * | 2019-02-11 | 2024-11-26 | Rensselaer Polytechnic Institute | Hybrid fiber for detection of UV light |
| CN110085744B (zh) * | 2019-04-10 | 2021-01-26 | 北京大学 | 有效固定有机阳离子的钙钛矿薄膜及太阳能电池的制备 |
| CN112151677A (zh) * | 2019-06-29 | 2020-12-29 | 杭州纤纳光电科技有限公司 | 一种钙钛矿薄膜的制备方法及其钙钛矿太阳能电池 |
| CN110330435B (zh) * | 2019-07-12 | 2020-08-07 | 中国科学院高能物理研究所 | 半导体材料、包含它的光电转换器件及制备方法 |
| JP7401070B2 (ja) * | 2019-08-09 | 2023-12-19 | 三菱ケミカル株式会社 | ペロブスカイト膜の製造方法、及び光電変換素子の製造方法 |
| CN110592668A (zh) * | 2019-10-12 | 2019-12-20 | 浙江工业大学 | 一种六角形碘化铅微纳单晶板的液相合成方法 |
| JP2023515477A (ja) | 2020-02-19 | 2023-04-13 | ファースト・ソーラー・インコーポレーテッド | 蒸気搬送堆積によるペロブスカイトデバイス加工の方法 |
| CN112086535B (zh) * | 2020-08-20 | 2022-08-09 | 隆基绿能科技股份有限公司 | 一种叠层电池 |
| KR20230068438A (ko) | 2020-09-22 | 2023-05-17 | 케일룩스 코포레이션 | 통합 탠덤 태양광 모듈 제작을 위한 방법 및 소자 |
| KR20230080896A (ko) | 2021-11-30 | 2023-06-07 | 경희대학교 산학협력단 | 결함을 이용한 페로브스카이트 구조 산화물의 결정화 방법 |
| CN114530560B (zh) * | 2022-01-25 | 2025-06-10 | 哈尔滨师范大学 | 一种钙钛矿单晶光电探测器及其制备方法 |
| CN114695667B (zh) * | 2022-03-22 | 2023-04-07 | 电子科技大学 | 一种埋底界面处理制备高效柔性钙钛矿太阳电池的方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656329A (en) | 1995-03-13 | 1997-08-12 | Texas Instruments Incorporated | Chemical vapor deposition of metal oxide films through ester elimination reactions |
| US5894064A (en) | 1995-03-13 | 1999-04-13 | Hampden-Smith; Mark | Solution routes to metal oxide films through ester elimination reactions |
| US6429318B1 (en) * | 2000-02-07 | 2002-08-06 | International Business Machines Corporaiton | Layered organic-inorganic perovskites having metal-deficient inorganic frameworks |
| KR100657891B1 (ko) | 2003-07-19 | 2006-12-14 | 삼성전자주식회사 | 반도체 나노결정 및 그 제조방법 |
| GB201208793D0 (en) * | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
| ES2707296T3 (es) | 2012-09-18 | 2019-04-03 | Univ Oxford Innovation Ltd | Dispositivo optoelectrónico |
| CN105210204A (zh) * | 2012-12-20 | 2015-12-30 | 耶路撒冷希伯来大学伊森姆研究发展有限公司 | 钙钛矿肖特基型太阳能电池 |
| JP2014154498A (ja) * | 2013-02-13 | 2014-08-25 | Nsk Ltd | 光電変換素子 |
| GB201310854D0 (en) | 2013-06-18 | 2013-07-31 | Isis Innovation | Photoactive layer production process |
| JP6106131B2 (ja) * | 2013-07-31 | 2017-03-29 | 富士フイルム株式会社 | 光電変換素子および太陽電池 |
| WO2015099412A1 (ko) * | 2013-12-23 | 2015-07-02 | 한국화학연구원 | 무/유기 하이브리드 페로브스카이트 화합물 전구물질 |
-
2014
- 2014-08-08 GB GBGB1414110.5A patent/GB201414110D0/en not_active Ceased
-
2015
- 2015-08-07 US US15/502,082 patent/US10622162B2/en active Active
- 2015-08-07 TR TR2019/06638T patent/TR201906638T4/tr unknown
- 2015-08-07 PL PL15749866T patent/PL3178121T3/pl unknown
- 2015-08-07 JP JP2017506736A patent/JP6660373B2/ja active Active
- 2015-08-07 CN CN201580042705.2A patent/CN106796988B/zh active Active
- 2015-08-07 EP EP15749866.8A patent/EP3178121B1/en active Active
- 2015-08-07 WO PCT/GB2015/052293 patent/WO2016020699A1/en not_active Ceased
- 2015-08-07 KR KR1020177006404A patent/KR102283498B1/ko active Active
- 2015-08-07 ES ES15749866T patent/ES2728516T3/es active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106796988A (zh) | 2017-05-31 |
| EP3178121A1 (en) | 2017-06-14 |
| PL3178121T3 (pl) | 2019-08-30 |
| TR201906638T4 (tr) | 2019-05-21 |
| GB201414110D0 (en) | 2014-09-24 |
| US20170229249A1 (en) | 2017-08-10 |
| US10622162B2 (en) | 2020-04-14 |
| CN106796988B (zh) | 2019-04-23 |
| WO2016020699A1 (en) | 2016-02-11 |
| KR102283498B1 (ko) | 2021-07-29 |
| ES2728516T3 (es) | 2019-10-25 |
| JP2017530546A (ja) | 2017-10-12 |
| KR20170041832A (ko) | 2017-04-17 |
| EP3178121B1 (en) | 2019-03-13 |
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