KR102281277B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102281277B1
KR102281277B1 KR1020140058580A KR20140058580A KR102281277B1 KR 102281277 B1 KR102281277 B1 KR 102281277B1 KR 1020140058580 A KR1020140058580 A KR 1020140058580A KR 20140058580 A KR20140058580 A KR 20140058580A KR 102281277 B1 KR102281277 B1 KR 102281277B1
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South Korea
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oxide semiconductor
film
semiconductor film
gate electrode
insulating film
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KR20140135651A (ko
Inventor
순페이 야마자키
마사히코 하야카와
다이스케 마츠바야시
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020210094064A priority Critical patent/KR102396907B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020140058580A 2013-05-16 2014-05-15 반도체 장치 Active KR102281277B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210094064A KR102396907B1 (ko) 2013-05-16 2021-07-19 반도체 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-104583 2013-05-16
JP2013104583 2013-05-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020210094064A Division KR102396907B1 (ko) 2013-05-16 2021-07-19 반도체 장치

Publications (2)

Publication Number Publication Date
KR20140135651A KR20140135651A (ko) 2014-11-26
KR102281277B1 true KR102281277B1 (ko) 2021-07-23

Family

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Family Applications (6)

Application Number Title Priority Date Filing Date
KR1020140058580A Active KR102281277B1 (ko) 2013-05-16 2014-05-15 반도체 장치
KR1020210094064A Active KR102396907B1 (ko) 2013-05-16 2021-07-19 반도체 장치
KR1020220056064A Ceased KR20220066229A (ko) 2013-05-16 2022-05-06 반도체 장치
KR1020230149177A Active KR102696059B1 (ko) 2013-05-16 2023-11-01 반도체 장치
KR1020240105838A Ceased KR20240125517A (ko) 2013-05-16 2024-08-08 반도체 장치
KR1020260012765A Pending KR20260019582A (ko) 2013-05-16 2026-01-22 반도체 장치

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020210094064A Active KR102396907B1 (ko) 2013-05-16 2021-07-19 반도체 장치
KR1020220056064A Ceased KR20220066229A (ko) 2013-05-16 2022-05-06 반도체 장치
KR1020230149177A Active KR102696059B1 (ko) 2013-05-16 2023-11-01 반도체 장치
KR1020240105838A Ceased KR20240125517A (ko) 2013-05-16 2024-08-08 반도체 장치
KR1020260012765A Pending KR20260019582A (ko) 2013-05-16 2026-01-22 반도체 장치

Country Status (4)

Country Link
US (1) US9312392B2 (https=)
JP (9) JP6614759B2 (https=)
KR (6) KR102281277B1 (https=)
TW (1) TWI633666B (https=)

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JP2003317971A (ja) * 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
JP2015195327A (ja) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
TWI688102B (zh) 2013-10-10 2020-03-11 日商半導體能源研究所股份有限公司 半導體裝置
CN104319279B (zh) * 2014-11-10 2017-11-14 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
DE112016001033T5 (de) * 2015-03-03 2017-12-21 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Verfahren zum Herstellen derselben oder Anzeigevorrichtung mit derselben
US9842938B2 (en) * 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
CN104779203B (zh) * 2015-04-23 2017-11-28 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置
CN104865758A (zh) * 2015-06-09 2015-08-26 京东方科技集团股份有限公司 阵列基板及其制作方法、液晶面板及液晶显示装置
CN105304643A (zh) * 2015-09-28 2016-02-03 深圳市华星光电技术有限公司 一种tft阵列基板及其制作方法
JP2020167188A (ja) 2019-03-28 2020-10-08 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
KR20210069835A (ko) * 2019-12-04 2021-06-14 엘지디스플레이 주식회사 디스플레이 장치
JP7066672B2 (ja) * 2019-12-19 2022-05-13 株式会社半導体エネルギー研究所 半導体装置
US12541290B2 (en) * 2022-12-02 2026-02-03 DoorDash, Inc. Image selection using machine learning

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