KR102256154B1 - 용매를 함유하는 코팅으로 코팅된 웨이퍼를 위한 베이킹 장치 - Google Patents

용매를 함유하는 코팅으로 코팅된 웨이퍼를 위한 베이킹 장치 Download PDF

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KR102256154B1
KR102256154B1 KR1020150163960A KR20150163960A KR102256154B1 KR 102256154 B1 KR102256154 B1 KR 102256154B1 KR 1020150163960 A KR1020150163960 A KR 1020150163960A KR 20150163960 A KR20150163960 A KR 20150163960A KR 102256154 B1 KR102256154 B1 KR 102256154B1
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South Korea
Prior art keywords
wafer
baking
solvent
discharge
purge gas
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Korean (ko)
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KR20160062702A (ko
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그레고리 조지
아론 폴리
올리버 트라이켈
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수스 마이크로텍 리소그라피 게엠바하
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    • H01L21/324
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016Chamber type furnaces
    • F27B17/0025Chamber type furnaces specially adapted for treating semiconductor wafers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B3/00Hearth-type furnaces, e.g. of reverberatory type; Electric arc furnaces ; Tank furnaces
    • F27B3/02Hearth-type furnaces, e.g. of reverberatory type; Electric arc furnaces ; Tank furnaces of single-chamber fixed-hearth type
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00Charging; Discharging; Manipulation of charge
    • F27D3/0084Charging; Manipulation of SC or SC wafers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • H01L21/02
    • H01L21/56
    • H01L21/683
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00Forming, maintaining or circulating atmospheres in heating chambers
    • F27D7/02Supplying steam, vapour, gases or liquids
    • H01L2021/60187
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Coating Apparatus (AREA)
KR1020150163960A 2014-11-25 2015-11-23 용매를 함유하는 코팅으로 코팅된 웨이퍼를 위한 베이킹 장치 Active KR102256154B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014117228.0 2014-11-25
DE102014117228.0A DE102014117228B4 (de) 2014-11-25 2014-11-25 Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet ist

Publications (2)

Publication Number Publication Date
KR20160062702A KR20160062702A (ko) 2016-06-02
KR102256154B1 true KR102256154B1 (ko) 2021-05-26

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KR1020150163960A Active KR102256154B1 (ko) 2014-11-25 2015-11-23 용매를 함유하는 코팅으로 코팅된 웨이퍼를 위한 베이킹 장치

Country Status (7)

Country Link
US (1) US10825701B2 (https=)
JP (1) JP6900146B2 (https=)
KR (1) KR102256154B1 (https=)
CN (1) CN105618352A (https=)
AT (1) AT516575B1 (https=)
DE (1) DE102014117228B4 (https=)
TW (1) TWI713472B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180000928A (ko) * 2016-06-24 2018-01-04 세메스 주식회사 가열 처리 유닛, 이를 갖는 베이크 장치 및 이를 이용한 기판 처리 방법
JP6872328B2 (ja) * 2016-09-06 2021-05-19 株式会社Screenホールディングス 減圧乾燥装置、減圧乾燥システム、減圧乾燥方法
JP6829053B2 (ja) * 2016-11-09 2021-02-10 コマツ産機株式会社 マシンルーム
CN107362953A (zh) * 2017-09-01 2017-11-21 深圳市华星光电半导体显示技术有限公司 光阻烘烤设备
US11779871B2 (en) * 2018-12-21 2023-10-10 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Exhaust module for wafer baking apparatus and wafer processing system having the same
CN109830451B (zh) * 2019-01-23 2021-07-23 武汉华星光电半导体显示技术有限公司 基板干燥装置
CN113249707A (zh) * 2021-04-21 2021-08-13 拓荆科技股份有限公司 一种薄膜沉积装置和薄膜沉积方法
KR102820468B1 (ko) * 2021-04-22 2025-06-17 삼성전자주식회사 베이크 장치
JP7820243B2 (ja) * 2021-07-12 2026-02-25 東京エレクトロン株式会社 加熱装置及び加熱方法
TW202337566A (zh) * 2021-11-18 2023-10-01 日商東京威力科創股份有限公司 熱處理裝置及熱處理方法
JP2023075018A (ja) * 2021-11-18 2023-05-30 東京エレクトロン株式会社 熱処理装置、及び熱処理方法
CN118896475B (zh) * 2024-07-11 2025-11-04 颀中科技(苏州)有限公司 晶圆烘烤装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005502784A (ja) 2001-08-06 2005-01-27 ジニテック カンパニー リミテッド プラズマで補強した原子層蒸着装置及びこれを利用した薄膜形成方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405454A (en) * 1965-12-06 1968-10-15 Arde Inc Waste management system
US4793283A (en) * 1987-12-10 1988-12-27 Sarkozy Robert F Apparatus for chemical vapor deposition with clean effluent and improved product yield
US4820371A (en) 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
JPH0645335A (ja) 1992-07-24 1994-02-18 Nec Corp 半導体装置の配線修正装置
JP2909944B2 (ja) * 1992-09-28 1999-06-23 東京エレクトロン株式会社 処理装置
JP2586600Y2 (ja) * 1992-11-19 1998-12-09 大日本スクリーン製造株式会社 基板加熱処理装置
US5595602A (en) * 1995-08-14 1997-01-21 Motorola, Inc. Diffuser for uniform gas distribution in semiconductor processing and method for using the same
US6248168B1 (en) * 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
JP2000124096A (ja) * 1998-10-16 2000-04-28 Matsushita Electric Ind Co Ltd 熱処理炉装置
US6143079A (en) * 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
JP2002313701A (ja) * 2001-04-16 2002-10-25 Canon Inc 加熱装置
JP3764357B2 (ja) * 2001-08-23 2006-04-05 東京エレクトロン株式会社 加熱処理装置
US7256370B2 (en) * 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
JP4066255B2 (ja) * 2002-09-27 2008-03-26 東京エレクトロン株式会社 基板の処理装置及び基板の処理方法
KR100549953B1 (ko) * 2004-04-30 2006-02-07 삼성전자주식회사 스피너설비의 베이크장치
KR100601979B1 (ko) * 2004-12-30 2006-07-18 삼성전자주식회사 반도체 웨이퍼의 베이킹 장치
CN101176187A (zh) 2005-04-18 2008-05-07 东京毅力科创株式会社 喷淋板及其制造方法
JP4601070B2 (ja) * 2006-01-17 2010-12-22 東京エレクトロン株式会社 熱処理装置
KR100763698B1 (ko) * 2006-07-20 2007-10-04 동부일렉트로닉스 주식회사 반도체 소자 제조를 위한 베이크 유닛
US7351936B1 (en) * 2007-01-22 2008-04-01 Taiwan Semiconductor Manufacturing Company Method and apparatus for preventing baking chamber exhaust line clog
JP4930495B2 (ja) * 2008-12-04 2012-05-16 東京エレクトロン株式会社 基板加熱装置及び基板加熱方法
JP5341706B2 (ja) * 2009-10-16 2013-11-13 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP2013084918A (ja) * 2011-09-27 2013-05-09 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法及びプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005502784A (ja) 2001-08-06 2005-01-27 ジニテック カンパニー リミテッド プラズマで補強した原子層蒸着装置及びこれを利用した薄膜形成方法

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Publication number Publication date
DE102014117228B4 (de) 2022-10-20
JP6900146B2 (ja) 2021-07-07
KR20160062702A (ko) 2016-06-02
US20160148823A1 (en) 2016-05-26
JP2016119452A (ja) 2016-06-30
AT516575A2 (de) 2016-06-15
AT516575A3 (de) 2017-11-15
DE102014117228A1 (de) 2016-05-25
TW201631286A (zh) 2016-09-01
AT516575B1 (de) 2022-07-15
US10825701B2 (en) 2020-11-03
CN105618352A (zh) 2016-06-01
TWI713472B (zh) 2020-12-21

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