AT516575A3 - Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet ist - Google Patents
Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet istInfo
- Publication number
- AT516575A3 AT516575A3 ATA50893/2015A AT508932015A AT516575A3 AT 516575 A3 AT516575 A3 AT 516575A3 AT 508932015 A AT508932015 A AT 508932015A AT 516575 A3 AT516575 A3 AT 516575A3
- Authority
- AT
- Austria
- Prior art keywords
- wafer
- solvent
- purge gas
- coating containing
- baking apparatus
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B3/00—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces
- F27B3/02—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces of single-chamber fixed-hearth type
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/0084—Charging; Manipulation of SC or SC wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/02—Supplying steam, vapour, gases, or liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Es wird eine Backvorrichtung (10) für einen Wafer (14) beschrieben, der mit einer ein Lösungsmittel enthaltenden Beschichtung (15) beschichtet ist, wobei die Backvorrichtung eine Backkammer (16), einen Träger (12) für den Wafer (14), einen Einlass (30) für ein Spülgas und eine Ausleitung (40) für das Spülgas aufweist, das mit aus der Beschichtung (15) verdampftem Lösungsmittel beladen ist. Der Einlass ist als Diffusionselement (30) ausgebildet, das über dem Wafer (14) angeordnet ist, damit das Spülgas gleichmäßig über im Wesentlichen die gesamte Oberfläche des Wafers (14) eingeleitet wird, und die Ausleitung ist als Ausleitungsring (40) ausgebildet, der das Diffusionselement (30) radial umgibt und an einer Decke (22) der Backkammer (16) angeordnet ist.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014117228.0A DE102014117228B4 (de) | 2014-11-25 | 2014-11-25 | Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet ist |
Publications (3)
Publication Number | Publication Date |
---|---|
AT516575A2 AT516575A2 (de) | 2016-06-15 |
AT516575A3 true AT516575A3 (de) | 2017-11-15 |
AT516575B1 AT516575B1 (de) | 2022-07-15 |
Family
ID=55914101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ATA50893/2015A AT516575B1 (de) | 2014-11-25 | 2015-10-20 | Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet ist |
Country Status (7)
Country | Link |
---|---|
US (1) | US10825701B2 (de) |
JP (1) | JP6900146B2 (de) |
KR (1) | KR102256154B1 (de) |
CN (1) | CN105618352A (de) |
AT (1) | AT516575B1 (de) |
DE (1) | DE102014117228B4 (de) |
TW (1) | TWI713472B (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180000928A (ko) * | 2016-06-24 | 2018-01-04 | 세메스 주식회사 | 가열 처리 유닛, 이를 갖는 베이크 장치 및 이를 이용한 기판 처리 방법 |
JP6872328B2 (ja) * | 2016-09-06 | 2021-05-19 | 株式会社Screenホールディングス | 減圧乾燥装置、減圧乾燥システム、減圧乾燥方法 |
JP6829053B2 (ja) * | 2016-11-09 | 2021-02-10 | コマツ産機株式会社 | マシンルーム |
CN107362953A (zh) * | 2017-09-01 | 2017-11-21 | 深圳市华星光电半导体显示技术有限公司 | 光阻烘烤设备 |
US11779871B2 (en) * | 2018-12-21 | 2023-10-10 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Exhaust module for wafer baking apparatus and wafer processing system having the same |
CN109830451B (zh) * | 2019-01-23 | 2021-07-23 | 武汉华星光电半导体显示技术有限公司 | 基板干燥装置 |
CN113249707A (zh) * | 2021-04-21 | 2021-08-13 | 拓荆科技股份有限公司 | 一种薄膜沉积装置和薄膜沉积方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5595602A (en) * | 1995-08-14 | 1997-01-21 | Motorola, Inc. | Diffuser for uniform gas distribution in semiconductor processing and method for using the same |
WO1999056307A1 (en) * | 1998-04-28 | 1999-11-04 | Applied Materials, Inc. | Improved heater for use in substrate processing apparatus to deposit tungsten |
US20050244759A1 (en) * | 2004-04-30 | 2005-11-03 | Myoung-Kuy Lee | Bake apparatus for use in spin-coating equipment |
US20060151462A1 (en) * | 2004-12-30 | 2006-07-13 | Samsung Electronics Co., Ltd. | Semiconductor wafer baking apparatus |
KR100763698B1 (ko) * | 2006-07-20 | 2007-10-04 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조를 위한 베이크 유닛 |
US20110092075A1 (en) * | 2009-10-16 | 2011-04-21 | Kunihiko Suzuki | Manufacturing apparatus and method for semiconductor device |
US20130078816A1 (en) * | 2011-09-27 | 2013-03-28 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3405454A (en) * | 1965-12-06 | 1968-10-15 | Arde Inc | Waste management system |
US4793283A (en) * | 1987-12-10 | 1988-12-27 | Sarkozy Robert F | Apparatus for chemical vapor deposition with clean effluent and improved product yield |
US4820371A (en) | 1987-12-15 | 1989-04-11 | Texas Instruments Incorporated | Apertured ring for exhausting plasma reactor gases |
JPH0645335A (ja) | 1992-07-24 | 1994-02-18 | Nec Corp | 半導体装置の配線修正装置 |
JP2909944B2 (ja) * | 1992-09-28 | 1999-06-23 | 東京エレクトロン株式会社 | 処理装置 |
JP2586600Y2 (ja) * | 1992-11-19 | 1998-12-09 | 大日本スクリーン製造株式会社 | 基板加熱処理装置 |
US6248168B1 (en) * | 1997-12-15 | 2001-06-19 | Tokyo Electron Limited | Spin coating apparatus including aging unit and solvent replacement unit |
JP2000124096A (ja) * | 1998-10-16 | 2000-04-28 | Matsushita Electric Ind Co Ltd | 熱処理炉装置 |
US6143079A (en) * | 1998-11-19 | 2000-11-07 | Asm America, Inc. | Compact process chamber for improved process uniformity |
JP2002313701A (ja) * | 2001-04-16 | 2002-10-25 | Canon Inc | 加熱装置 |
US7138336B2 (en) * | 2001-08-06 | 2006-11-21 | Asm Genitech Korea Ltd. | Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof |
JP3764357B2 (ja) * | 2001-08-23 | 2006-04-05 | 東京エレクトロン株式会社 | 加熱処理装置 |
US7256370B2 (en) * | 2002-03-15 | 2007-08-14 | Steed Technology, Inc. | Vacuum thermal annealer |
JP4066255B2 (ja) * | 2002-09-27 | 2008-03-26 | 東京エレクトロン株式会社 | 基板の処理装置及び基板の処理方法 |
KR20080014778A (ko) * | 2005-04-18 | 2008-02-14 | 호쿠리쿠세이케고교 가부시키가이샤 | 샤워 플레이트 및 그 제조 방법 |
JP4601070B2 (ja) | 2006-01-17 | 2010-12-22 | 東京エレクトロン株式会社 | 熱処理装置 |
US7351936B1 (en) * | 2007-01-22 | 2008-04-01 | Taiwan Semiconductor Manufacturing Company | Method and apparatus for preventing baking chamber exhaust line clog |
JP4930495B2 (ja) * | 2008-12-04 | 2012-05-16 | 東京エレクトロン株式会社 | 基板加熱装置及び基板加熱方法 |
-
2014
- 2014-11-25 DE DE102014117228.0A patent/DE102014117228B4/de active Active
-
2015
- 2015-10-16 JP JP2015204572A patent/JP6900146B2/ja active Active
- 2015-10-20 TW TW104134347A patent/TWI713472B/zh active
- 2015-10-20 AT ATA50893/2015A patent/AT516575B1/de active
- 2015-11-23 KR KR1020150163960A patent/KR102256154B1/ko active IP Right Grant
- 2015-11-23 US US14/948,877 patent/US10825701B2/en active Active
- 2015-11-24 CN CN201510829006.4A patent/CN105618352A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5595602A (en) * | 1995-08-14 | 1997-01-21 | Motorola, Inc. | Diffuser for uniform gas distribution in semiconductor processing and method for using the same |
WO1999056307A1 (en) * | 1998-04-28 | 1999-11-04 | Applied Materials, Inc. | Improved heater for use in substrate processing apparatus to deposit tungsten |
US20050244759A1 (en) * | 2004-04-30 | 2005-11-03 | Myoung-Kuy Lee | Bake apparatus for use in spin-coating equipment |
US20060151462A1 (en) * | 2004-12-30 | 2006-07-13 | Samsung Electronics Co., Ltd. | Semiconductor wafer baking apparatus |
KR100763698B1 (ko) * | 2006-07-20 | 2007-10-04 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조를 위한 베이크 유닛 |
US20110092075A1 (en) * | 2009-10-16 | 2011-04-21 | Kunihiko Suzuki | Manufacturing apparatus and method for semiconductor device |
US20130078816A1 (en) * | 2011-09-27 | 2013-03-28 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium |
Also Published As
Publication number | Publication date |
---|---|
KR102256154B1 (ko) | 2021-05-26 |
TW201631286A (zh) | 2016-09-01 |
AT516575B1 (de) | 2022-07-15 |
US10825701B2 (en) | 2020-11-03 |
JP6900146B2 (ja) | 2021-07-07 |
KR20160062702A (ko) | 2016-06-02 |
TWI713472B (zh) | 2020-12-21 |
US20160148823A1 (en) | 2016-05-26 |
CN105618352A (zh) | 2016-06-01 |
DE102014117228A1 (de) | 2016-05-25 |
AT516575A2 (de) | 2016-06-15 |
DE102014117228B4 (de) | 2022-10-20 |
JP2016119452A (ja) | 2016-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AT516575A3 (de) | Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet ist | |
PH12017501628A1 (en) | Wafer dryer apparatus and method | |
CL2019001161A1 (es) | Articulo de suministro de aerosol | |
GB2556582A (en) | Microfluidic devices and methods of use thereof | |
CA3002817A1 (en) | Illumination device for a fluid delivery apparatus | |
JP2016219803A5 (de) | ||
JP2016119452A5 (de) | ||
WO2015145122A3 (en) | Method for coating a filter substrate | |
TW201612953A (en) | Substrate support with more uniform edge purge | |
TWM389934U (en) | Atomic layer deposition chamber and components | |
RU2015142107A (ru) | Способ и устройство для защиты внутренних поверхностей насоса посредством атомно-слоевого покрытия | |
WO2016156495A3 (en) | Article for use with apparatus for heating smokable material | |
WO2020089180A9 (de) | Beschichtungsvorrichtung, prozesskammer, sowie verfahren zum beschichten eines substrats und substrat beschichtet mit zumindest einer materialschicht | |
TW201611899A (en) | Coating device | |
CH710182A8 (de) | Turbinenkomponente mit gestuften Öffnungen. | |
DK2707127T3 (da) | Indretning til kontinuerlig behandling af faste stoffer i et fluid-bed-apparat | |
PH12017500672B1 (en) | Spray nozzle apparatus for spray-drying applications | |
MX2017007584A (es) | Un eductor controlable espacialmente para manejar aditivos solidos y procesos que lo usan. | |
FR3037511B1 (fr) | Dispositif de revetement d'un carter annulaire de turbomachine | |
WO2016072850A3 (en) | Atomic layer deposition apparatus and method for processing substrates using an apparatus | |
MX2017015935A (es) | Sistema y metodo para mejorar el flujo de aire de enfriamiento. | |
SG11201811727WA (en) | Method and device for producing coated semiconductor wafers | |
WO2017122963A3 (ko) | 에피텍셜 웨이퍼 제조 방법 | |
SG10201902318UA (en) | Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor | |
SG11202011520TA (en) | Upper electrode assembly, reaction chamber and atomic layer deposition device |