WO2017122963A3 - 에피텍셜 웨이퍼 제조 방법 - Google Patents

에피텍셜 웨이퍼 제조 방법 Download PDF

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Publication number
WO2017122963A3
WO2017122963A3 PCT/KR2017/000090 KR2017000090W WO2017122963A3 WO 2017122963 A3 WO2017122963 A3 WO 2017122963A3 KR 2017000090 W KR2017000090 W KR 2017000090W WO 2017122963 A3 WO2017122963 A3 WO 2017122963A3
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WIPO (PCT)
Prior art keywords
chamber
gas
discharging
epitaxial
etching
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PCT/KR2017/000090
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English (en)
French (fr)
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WO2017122963A2 (ko
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장규일
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에스케이실트론 주식회사
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Publication of WO2017122963A2 publication Critical patent/WO2017122963A2/ko
Publication of WO2017122963A3 publication Critical patent/WO2017122963A3/ko

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)

Abstract

실시 예는 가스 유입구 및 가스 배출구를 구비하는 챔버를 포함하는 에피텍셜 반응기를 이용하는 에피텍셜 웨이퍼 제조 방법에 관한 것으로, 상기 챔버 내의 오염 물질을 제거하는 세정 단계, 상기 에피텍셜 반응기에 전원 공급을 중단시키는 비활성화 단계, 및 적어도 하나의 더미 웨이퍼에 에피텍셜층을 증착시키는 더미 런 단계를 포함하며, 상기 세정 단계는 상기 챔버 내부의 온도를 1150℃ ~ 1200℃로 유지하는 베이크 단계; 식각 가스를 상기 챔버 내부로 공급하고, 상기 가스 배출구로 배출시키는 식각 단계; 및 상기 챔버의 온도를 700 ℃ 내지 800℃로 유지한 상태에서 수소 가스 또는 비활성가스를 상기 챔버 내부로 공급하고, 상기 가스 배출구로 배출시키는 최종 배출 단계를 포함한다.
PCT/KR2017/000090 2016-01-12 2017-01-04 에피텍셜 웨이퍼 제조 방법 WO2017122963A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0003464 2016-01-12
KR1020160003464A KR101810644B1 (ko) 2016-01-12 2016-01-12 에피텍셜웨이퍼 제조 방법

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WO2017122963A2 WO2017122963A2 (ko) 2017-07-20
WO2017122963A3 true WO2017122963A3 (ko) 2018-08-02

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KR (1) KR101810644B1 (ko)
TW (1) TWI626730B (ko)
WO (1) WO2017122963A2 (ko)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP7091222B2 (ja) * 2018-10-23 2022-06-27 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN114045470B (zh) * 2021-12-31 2022-09-30 西安奕斯伟材料科技有限公司 一种用于常压外延反应腔室的清洁方法及外延硅片
CN115198352B (zh) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 一种外延生长方法及外延晶圆
CN115747756A (zh) * 2022-12-07 2023-03-07 西安奕斯伟材料科技有限公司 外延生长设备重启方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311894A (ja) * 2003-04-10 2004-11-04 Renesas Technology Corp 半導体装置の製造方法
KR20050005347A (ko) * 2003-07-01 2005-01-13 주식회사 아이피에스 박막증착방법
KR20060089978A (ko) * 2005-02-03 2006-08-10 삼성전자주식회사 선택적인 에피택셜 반도체층의 형성방법
JP2010177551A (ja) * 2009-01-30 2010-08-12 Sumco Corp 枚葉式ｃｖｄ用チャンバのクリーニング方法
US20130145984A1 (en) * 2010-08-31 2013-06-13 Chao Zhang Method of epitaxial growth effectively preventing auto-doping effect

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Publication number Priority date Publication date Assignee Title
US20030045098A1 (en) * 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
US7361563B2 (en) * 2004-06-17 2008-04-22 Samsung Electronics Co., Ltd. Methods of fabricating a semiconductor device using a selective epitaxial growth technique
KR100593736B1 (ko) * 2004-06-17 2006-06-28 삼성전자주식회사 단결정 반도체 상에 선택적으로 에피택시얼 반도체층을형성하는 방법들 및 이를 사용하여 제조된 반도체 소자들
US7855126B2 (en) * 2004-06-17 2010-12-21 Samsung Electronics Co., Ltd. Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311894A (ja) * 2003-04-10 2004-11-04 Renesas Technology Corp 半導体装置の製造方法
KR20050005347A (ko) * 2003-07-01 2005-01-13 주식회사 아이피에스 박막증착방법
KR20060089978A (ko) * 2005-02-03 2006-08-10 삼성전자주식회사 선택적인 에피택셜 반도체층의 형성방법
JP2010177551A (ja) * 2009-01-30 2010-08-12 Sumco Corp 枚葉式ｃｖｄ用チャンバのクリーニング方法
US20130145984A1 (en) * 2010-08-31 2013-06-13 Chao Zhang Method of epitaxial growth effectively preventing auto-doping effect

Also Published As

Publication number Publication date
TW201725697A (zh) 2017-07-16
KR20170084429A (ko) 2017-07-20
TWI626730B (zh) 2018-06-11
KR101810644B1 (ko) 2018-01-25
WO2017122963A2 (ko) 2017-07-20

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