KR102254646B1 - 포토마스크 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법 - Google Patents

포토마스크 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법 Download PDF

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KR102254646B1
KR102254646B1 KR1020190088903A KR20190088903A KR102254646B1 KR 102254646 B1 KR102254646 B1 KR 102254646B1 KR 1020190088903 A KR1020190088903 A KR 1020190088903A KR 20190088903 A KR20190088903 A KR 20190088903A KR 102254646 B1 KR102254646 B1 KR 102254646B1
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South Korea
Prior art keywords
film
photomask
light
semi
crystal
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KR1020190088903A
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English (en)
Korean (ko)
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KR20200013601A (ko
Inventor
켄지 나카야마
Original Assignee
호야 가부시키가이샤
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Publication of KR20200013601A publication Critical patent/KR20200013601A/ko
Priority to KR1020210062744A priority Critical patent/KR102439047B1/ko
Application granted granted Critical
Publication of KR102254646B1 publication Critical patent/KR102254646B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020190088903A 2018-07-30 2019-07-23 포토마스크 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법 KR102254646B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210062744A KR102439047B1 (ko) 2018-07-30 2021-05-14 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-142919 2018-07-30
JP2018142919 2018-07-30

Related Child Applications (1)

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KR1020210062744A Division KR102439047B1 (ko) 2018-07-30 2021-05-14 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법

Publications (2)

Publication Number Publication Date
KR20200013601A KR20200013601A (ko) 2020-02-07
KR102254646B1 true KR102254646B1 (ko) 2021-05-21

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KR1020190088903A KR102254646B1 (ko) 2018-07-30 2019-07-23 포토마스크 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법
KR1020210062744A KR102439047B1 (ko) 2018-07-30 2021-05-14 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법

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JP (1) JP7353094B2 (ja)
KR (2) KR102254646B1 (ja)
CN (2) CN110780534B (ja)
TW (2) TWI729444B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6741893B1 (ja) * 2020-03-04 2020-08-19 株式会社エスケーエレクトロニクス ハーフトーンマスクの欠陥修正方法、ハーフトーンマスクの製造方法及びハーフトーンマスク
JP7461220B2 (ja) * 2020-05-25 2024-04-03 株式会社エスケーエレクトロニクス フォトマスクの修正方法
JP7449187B2 (ja) 2020-07-20 2024-03-13 Hoya株式会社 位相シフトマスクの製造方法、位相シフトマスク、および、表示装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007171651A (ja) 2005-12-22 2007-07-05 Dainippon Printing Co Ltd 階調をもつフォトマスクの欠陥修正方法および階調をもつフォトマスク
JP2017173670A (ja) 2016-03-25 2017-09-28 Hoya株式会社 パターン修正方法、フォトマスクの製造方法、フォトマスク、及び修正膜形成装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05333534A (ja) * 1992-05-30 1993-12-17 Sony Corp 位相シフト・マスクの欠陥修正方法
JP3312702B2 (ja) * 1993-04-09 2002-08-12 大日本印刷株式会社 位相シフトフォトマスク及び位相シフトフォトマスク用ブランクス
JP3354305B2 (ja) * 1993-09-24 2002-12-09 大日本印刷株式会社 位相シフトマスクおよび位相シフトマスクの欠陥修正方法
JPH08314120A (ja) * 1995-03-16 1996-11-29 Hoya Corp マスクパターンの修正方法
JP4442962B2 (ja) * 1999-10-19 2010-03-31 株式会社ルネサステクノロジ フォトマスクの製造方法
KR20040001276A (ko) * 2002-06-27 2004-01-07 삼성전자주식회사 포토마스크의 결함 수정 방법
US6924069B2 (en) * 2003-01-15 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Method for repairing attenuated phase shift masks
KR100956082B1 (ko) * 2006-04-20 2010-05-07 엘지이노텍 주식회사 포토마스크의 리페어 방법
JP4968464B2 (ja) 2006-07-05 2012-07-04 大日本印刷株式会社 階調をもつフォトマスクの欠陥部修正方法および修正箇所の評価方法
JP5036349B2 (ja) * 2007-02-28 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法及びグレートーンマスクの製造方法
JP5057866B2 (ja) * 2007-07-03 2012-10-24 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
JP2009020312A (ja) * 2007-07-12 2009-01-29 Hoya Corp グレートーンマスクの欠陥修正方法、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
JP2010079113A (ja) * 2008-09-28 2010-04-08 Hoya Corp フォトマスクの製造方法及びフォトマスク
KR101079161B1 (ko) * 2008-12-22 2011-11-02 엘지이노텍 주식회사 하프톤 마스크 및 그 제조방법
TWI440964B (zh) 2009-01-27 2014-06-11 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
JP2012073553A (ja) * 2010-09-30 2012-04-12 Hoya Corp フォトマスクの欠陥修正方法、フォトマスクの製造方法、及びフォトマスク、並びにパターン転写方法
JP6335735B2 (ja) 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP6332109B2 (ja) * 2015-03-31 2018-05-30 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6544300B2 (ja) * 2015-08-31 2019-07-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク
KR20170079742A (ko) * 2015-12-31 2017-07-10 엘지디스플레이 주식회사 하프톤 마스크의 리페어 방법
KR102093103B1 (ko) * 2016-04-01 2020-03-25 (주)에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크, 포토 마스크 및 그의 제조 방법
KR20180066354A (ko) * 2016-12-08 2018-06-19 주식회사 피케이엘 하프톤 마스크의 반투과부 결함 수정 방법 및 그 결함 수정 하프톤 마스크

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007171651A (ja) 2005-12-22 2007-07-05 Dainippon Printing Co Ltd 階調をもつフォトマスクの欠陥修正方法および階調をもつフォトマスク
JP2017173670A (ja) 2016-03-25 2017-09-28 Hoya株式会社 パターン修正方法、フォトマスクの製造方法、フォトマスク、及び修正膜形成装置

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Publication number Publication date
TWI729444B (zh) 2021-06-01
JP7353094B2 (ja) 2023-09-29
TW202013445A (zh) 2020-04-01
KR20210058792A (ko) 2021-05-24
KR102439047B1 (ko) 2022-09-02
TWI821669B (zh) 2023-11-11
CN110780534B (zh) 2023-06-13
KR20200013601A (ko) 2020-02-07
CN116626982A (zh) 2023-08-22
TW202132909A (zh) 2021-09-01
JP2020024406A (ja) 2020-02-13
CN110780534A (zh) 2020-02-11

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