KR102164985B1 - 보유 디바이스, 보유 방법, 리소그래피 장치 및 물품 제조 방법 - Google Patents

보유 디바이스, 보유 방법, 리소그래피 장치 및 물품 제조 방법 Download PDF

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KR102164985B1
KR102164985B1 KR1020170033587A KR20170033587A KR102164985B1 KR 102164985 B1 KR102164985 B1 KR 102164985B1 KR 1020170033587 A KR1020170033587 A KR 1020170033587A KR 20170033587 A KR20170033587 A KR 20170033587A KR 102164985 B1 KR102164985 B1 KR 102164985B1
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adsorption
substrate
vacuum
order
adsorption mechanisms
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Korean (ko)
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KR20170113133A (ko
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아츠시 가와하라
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H01L21/6838—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H01L21/0274—
    • H01L21/67253—
    • H01L21/6835—
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020170033587A 2016-03-25 2017-03-17 보유 디바이스, 보유 방법, 리소그래피 장치 및 물품 제조 방법 Active KR102164985B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-061983 2016-03-25
JP2016061983A JP6708455B2 (ja) 2016-03-25 2016-03-25 保持装置、保持方法、リソグラフィ装置、および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20170113133A KR20170113133A (ko) 2017-10-12
KR102164985B1 true KR102164985B1 (ko) 2020-10-13

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KR1020170033587A Active KR102164985B1 (ko) 2016-03-25 2017-03-17 보유 디바이스, 보유 방법, 리소그래피 장치 및 물품 제조 방법

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US (1) US10067427B2 (enExample)
EP (1) EP3223073B1 (enExample)
JP (1) JP6708455B2 (enExample)
KR (1) KR102164985B1 (enExample)
TW (1) TW201801239A (enExample)

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US10654216B2 (en) * 2016-03-30 2020-05-19 Canon Kabushiki Kaisha System and methods for nanoimprint lithography
JP6833350B2 (ja) * 2016-06-01 2021-02-24 キヤノン株式会社 保持装置、搬送装置、リソグラフィ装置、および物品の製造方法
JP7071089B2 (ja) * 2017-10-31 2022-05-18 キヤノン株式会社 保持装置、保持方法、リソグラフィ装置および、物品の製造方法
JP7100485B2 (ja) 2018-04-26 2022-07-13 キヤノン株式会社 インプリント装置およびデバイス製造方法
KR102041044B1 (ko) * 2018-04-30 2019-11-05 피에스케이홀딩스 주식회사 기판 지지 유닛
CN112335020B (zh) * 2018-06-22 2024-04-09 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质
JP2020145323A (ja) * 2019-03-06 2020-09-10 東京エレクトロン株式会社 基板保持装置および基板吸着方法
KR102134876B1 (ko) * 2019-12-30 2020-07-16 이재은 부압을 이용한 진공 흡착기
JP7495819B2 (ja) * 2020-06-05 2024-06-05 キヤノン株式会社 保持装置、リソグラフィ装置及び物品の製造方法
JP7609520B2 (ja) * 2020-12-25 2025-01-07 東京エレクトロン株式会社 基板処理装置、及び基板処理方法
US11749551B2 (en) * 2021-02-08 2023-09-05 Core Flow Ltd. Chuck for acquiring a warped workpiece
US12550678B2 (en) * 2021-08-30 2026-02-10 Taiwan Semiconductor Manufacturing Company Ltd. Method and device for placing semiconductor wafer
JP7682744B2 (ja) * 2021-09-10 2025-05-26 キヤノン株式会社 保持装置、保持装置の吸着異常を判定する方法、リソグラフィー装置、及び、物品の製造方法
WO2023041251A1 (en) * 2021-09-16 2023-03-23 Asml Netherlands B.V. Thermal conditioning unit, substrate handling device and lithographic apparatus
DE102021213421A1 (de) * 2021-11-29 2023-06-01 Festo Se & Co. Kg Ventilmodul und Verfahren zum Betreiben eines derartigen Ventilmoduls
JP2023119554A (ja) * 2022-02-16 2023-08-28 キヤノン株式会社 基板保持装置、基板保持方法、リソグラフィ装置及び物品の製造方法
GB202214927D0 (en) * 2022-10-10 2022-11-23 Metryx Ltd Device and wafer mass metrology apparatus
KR20250042075A (ko) * 2023-09-19 2025-03-26 캐논 가부시끼가이샤 기판 유지장치, 기판 처리장치, 분리방법, 및 물품 제조방법
US20250372434A1 (en) * 2024-05-28 2025-12-04 Kla Corporation Methods And Systems For Chucking Highly Bowed Semiconductor Wafers

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EP0463853B1 (en) * 1990-06-29 1998-11-04 Canon Kabushiki Kaisha Vacuum chuck
JPH0811270B2 (ja) 1992-07-01 1996-02-07 工業技術院長 一方向性凝固超合金鋳造用高放射率インベストメントシェル鋳型の製造方法
JPH06196381A (ja) * 1992-12-22 1994-07-15 Canon Inc 基板保持装置
JPH0758191A (ja) * 1993-08-13 1995-03-03 Toshiba Corp ウェハステージ装置
JPH0980404A (ja) 1995-09-11 1997-03-28 Hitachi Ltd 基板吸着装置
JPH09251948A (ja) * 1996-03-18 1997-09-22 Fujitsu Ltd 平坦性矯正装置および平坦性矯正方法
JPH1086085A (ja) * 1996-09-19 1998-04-07 Dainippon Screen Mfg Co Ltd 基板吸着装置および基板吸着方法
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US6446948B1 (en) * 2000-03-27 2002-09-10 International Business Machines Corporation Vacuum chuck for reducing distortion of semiconductor and GMR head wafers during processing
JP5665336B2 (ja) * 2009-04-06 2015-02-04 キヤノン株式会社 基板保持装置、及びそれを用いたリソグラフィー装置
JP5682106B2 (ja) * 2009-09-11 2015-03-11 株式会社ニコン 基板処理方法、及び基板処理装置
JP5877005B2 (ja) * 2011-07-29 2016-03-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板保持装置、および、基板保持方法
JP6294633B2 (ja) * 2013-10-23 2018-03-14 キヤノン株式会社 リソグラフィ装置、決定方法及び物品の製造方法
JP2017515148A (ja) * 2014-05-06 2017-06-08 エーエスエムエル ネザーランズ ビー．ブイ． 基板支持体、基板支持ロケーションに基板を搭載するための方法、リソグラフィ装置、及びデバイス製造方法
US10036964B2 (en) * 2015-02-15 2018-07-31 Kla-Tencor Corporation Prediction based chucking and lithography control optimization

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EP3223073A2 (en) 2017-09-27
US10067427B2 (en) 2018-09-04
JP6708455B2 (ja) 2020-06-10
EP3223073A3 (en) 2017-12-20
KR20170113133A (ko) 2017-10-12
TW201801239A (zh) 2018-01-01
US20170277039A1 (en) 2017-09-28
JP2017175071A (ja) 2017-09-28
EP3223073B1 (en) 2020-08-26

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