KR102157030B1 - 네거티브형 감광성 실록산 조성물 - Google Patents

네거티브형 감광성 실록산 조성물 Download PDF

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KR102157030B1
KR102157030B1 KR1020140017312A KR20140017312A KR102157030B1 KR 102157030 B1 KR102157030 B1 KR 102157030B1 KR 1020140017312 A KR1020140017312 A KR 1020140017312A KR 20140017312 A KR20140017312 A KR 20140017312A KR 102157030 B1 KR102157030 B1 KR 102157030B1
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polysiloxane
negative photosensitive
film
photosensitive siloxane
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KR20140104355A (ko
Inventor
다이시 요쿄야마
유지 다시로
도시아키 노나카
에리 히라하라
게오르게 파블로브스키
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에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020140017312A 2013-02-20 2014-02-14 네거티브형 감광성 실록산 조성물 Active KR102157030B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013031345A JP6137862B2 (ja) 2013-02-20 2013-02-20 ネガ型感光性シロキサン組成物
JPJP-P-2013-031345 2013-02-20

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KR20140104355A KR20140104355A (ko) 2014-08-28
KR102157030B1 true KR102157030B1 (ko) 2020-09-21

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JP (1) JP6137862B2 (enExample)
KR (1) KR102157030B1 (enExample)
CN (1) CN103995437B (enExample)
TW (1) TWI611268B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2998297A1 (en) * 2014-09-18 2016-03-23 Heraeus Materials Korea Corporation Photo-acid generating compounds, compositions comprising said compounds, composite and process for making said composite as well as uses of said compounds
US9477150B2 (en) * 2015-03-13 2016-10-25 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications
JP2018189738A (ja) * 2017-04-28 2018-11-29 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポジ型感光性シロキサン組成物、およびそれを用いて形成した硬化膜
WO2019023837A1 (en) * 2017-07-31 2019-02-07 Dow Silicones Corporation HANDLING ADDITIVE FOR SILICONE ELASTOMERS
JP2019099673A (ja) * 2017-12-01 2019-06-24 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポリシロキサン、これを含んでなる組成物、およびこれを用いた硬化膜
JP2019120750A (ja) * 2017-12-28 2019-07-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 感光性シロキサン組成物およびこれを用いたパターン形成方法
TWI701511B (zh) * 2019-01-16 2020-08-11 臺灣永光化學工業股份有限公司 負型感光性樹脂組成物及其用途
CN112558409B (zh) * 2019-09-25 2022-05-20 常州强力先端电子材料有限公司 能够在i线高产酸的磺酰亚胺类光产酸剂
WO2021057813A1 (zh) * 2019-09-25 2021-04-01 常州强力先端电子材料有限公司 磺酰亚胺类光产酸剂、感光性树脂组合物、图形化方法及感光性树脂组合物的应用
CN112552280A (zh) * 2019-09-25 2021-03-26 常州强力先端电子材料有限公司 一种高产酸的磺酰亚胺类光产酸剂
CN114516863B (zh) * 2020-11-19 2024-06-21 常州强力电子新材料股份有限公司 一种高产酸的酰亚胺磺酸酯类光产酸剂、组合物及应用
CN115894438B (zh) * 2021-09-30 2025-03-21 华为技术有限公司 感光分子及其应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007193318A (ja) * 2005-12-21 2007-08-02 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜および硬化膜を有する素子
KR100924621B1 (ko) 2003-10-07 2009-11-02 히다치 가세고교 가부시끼가이샤 방사선 경화성 조성물, 그 보존방법, 경화막 형성방법,패턴 형성방법, 패턴 사용방법, 전자부품 및 광도파로
WO2011087011A1 (ja) * 2010-01-13 2011-07-21 株式会社Adeka 新規スルホン酸誘導体化合物及び新規ナフタル酸誘導体化合物
JP2012155200A (ja) * 2011-01-27 2012-08-16 Jsr Corp 感放射線性組成物、硬化膜及びその形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2933879B2 (ja) 1995-08-11 1999-08-16 シャープ株式会社 透過型液晶表示装置およびその製造方法
JP4687250B2 (ja) * 2004-06-02 2011-05-25 東レ株式会社 感光性樹脂組成物
KR101203632B1 (ko) 2004-12-24 2012-11-23 재단법인 포항산업과학연구원 투윈롤 스트립 캐스터의 롤갭 측정방법
JP2006236839A (ja) 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
JP2007316314A (ja) * 2006-05-25 2007-12-06 Sekisui Chem Co Ltd 感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
JP2010039053A (ja) * 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
FR2935977B1 (fr) * 2008-09-15 2010-12-17 Centre Nat Rech Scient Procede d'hydrolyse-polycondensation photochimique de chromophores reticulables a encombrement sterique, catalyse par un acide photogenere et ses applications.
JP4918578B2 (ja) 2009-08-17 2012-04-18 ダウ・コーニング・コーポレイション ネガ型パターン形成用硬化性シリコーン組成物、及びこれを用いたパターン形成方法
JP5516869B2 (ja) 2010-03-13 2014-06-11 川崎化成工業株式会社 光カチオン重合増感剤組成物、光感応性酸発生剤組成物、光カチオン重合性組成物及び該光カチオン重合組成物を重合してなる重合物
JP5707407B2 (ja) * 2010-08-24 2015-04-30 メルクパフォーマンスマテリアルズＩｐ合同会社 ポジ型感光性シロキサン組成物
CN103348289B (zh) * 2011-03-22 2016-04-13 Jsr株式会社 感放射线性组成物以及硬化膜及其形成方法
WO2012161025A1 (ja) * 2011-05-20 2012-11-29 ＡｚエレクトロニックマテリアルズＩｐ株式会社 ポジ型感光性シロキサン組成物
JP5990447B2 (ja) * 2012-11-12 2016-09-14 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 芳香族イミド化合物及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100924621B1 (ko) 2003-10-07 2009-11-02 히다치 가세고교 가부시끼가이샤 방사선 경화성 조성물, 그 보존방법, 경화막 형성방법,패턴 형성방법, 패턴 사용방법, 전자부품 및 광도파로
JP2007193318A (ja) * 2005-12-21 2007-08-02 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜および硬化膜を有する素子
WO2011087011A1 (ja) * 2010-01-13 2011-07-21 株式会社Adeka 新規スルホン酸誘導体化合物及び新規ナフタル酸誘導体化合物
JP2012155200A (ja) * 2011-01-27 2012-08-16 Jsr Corp 感放射線性組成物、硬化膜及びその形成方法

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Publication number Publication date
KR20140104355A (ko) 2014-08-28
JP6137862B2 (ja) 2017-05-31
TWI611268B (zh) 2018-01-11
CN103995437B (zh) 2019-11-29
CN103995437A (zh) 2014-08-20
JP2014160199A (ja) 2014-09-04
TW201437765A (zh) 2014-10-01

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