KR102123366B1 - 피드스루 구조를 가진 기판 지지체 - Google Patents

피드스루 구조를 가진 기판 지지체 Download PDF

Info

Publication number
KR102123366B1
KR102123366B1 KR1020147030437A KR20147030437A KR102123366B1 KR 102123366 B1 KR102123366 B1 KR 102123366B1 KR 1020147030437 A KR1020147030437 A KR 1020147030437A KR 20147030437 A KR20147030437 A KR 20147030437A KR 102123366 B1 KR102123366 B1 KR 102123366B1
Authority
KR
South Korea
Prior art keywords
openings
disposed
conductors
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147030437A
Other languages
English (en)
Korean (ko)
Other versions
KR20150003229A (ko
Inventor
레온 볼포브스키
마유르 지. 쿨카니
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150003229A publication Critical patent/KR20150003229A/ko
Application granted granted Critical
Publication of KR102123366B1 publication Critical patent/KR102123366B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
KR1020147030437A 2012-03-30 2013-03-19 피드스루 구조를 가진 기판 지지체 Active KR102123366B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261617946P 2012-03-30 2012-03-30
US61/617,946 2012-03-30
US13/845,492 US9706605B2 (en) 2012-03-30 2013-03-18 Substrate support with feedthrough structure
US13/845,492 2013-03-18
PCT/US2013/032874 WO2013148406A1 (en) 2012-03-30 2013-03-19 Substrate support with feedthrough structure

Publications (2)

Publication Number Publication Date
KR20150003229A KR20150003229A (ko) 2015-01-08
KR102123366B1 true KR102123366B1 (ko) 2020-06-16

Family

ID=49233841

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147030437A Active KR102123366B1 (ko) 2012-03-30 2013-03-19 피드스루 구조를 가진 기판 지지체

Country Status (6)

Country Link
US (1) US9706605B2 (enExample)
JP (1) JP6211053B2 (enExample)
KR (1) KR102123366B1 (enExample)
CN (1) CN104247001B (enExample)
TW (1) TWI624901B (enExample)
WO (1) WO2013148406A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5973731B2 (ja) * 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US9543186B2 (en) 2013-02-01 2017-01-10 Applied Materials, Inc. Substrate support with controlled sealing gap
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
US9698074B2 (en) 2013-09-16 2017-07-04 Applied Materials, Inc. Heated substrate support with temperature profile control
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
US10582570B2 (en) 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US10892179B2 (en) * 2016-11-08 2021-01-12 Lam Research Corporation Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
KR20190042831A (ko) 2017-10-17 2019-04-25 주식회사 이에스티 정전척 및 진공 챔버의 피드스루 기밀 구조
KR102124303B1 (ko) 2018-10-15 2020-06-18 세메스 주식회사 기판 처리 장치, 기판 지지 유닛 및 기판 처리 방법
WO2020189264A1 (ja) * 2019-03-18 2020-09-24 日本碍子株式会社 セラミックヒータ及びその製法
JP2021034347A (ja) * 2019-08-29 2021-03-01 株式会社デンソーウェーブ 複合ケーブル及びロボットシステム
US11270903B2 (en) * 2019-12-17 2022-03-08 Applied Materials, Inc. Multi zone electrostatic chuck
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
CN114121581B (zh) * 2020-08-27 2024-04-05 中微半导体设备(上海)股份有限公司 等离子体处理装置
KR102326329B1 (ko) 2021-03-30 2021-11-15 임하나 진공 챔버용 피드 스루 및 그 제조 방법
CN116387224A (zh) * 2021-12-22 2023-07-04 拓荆科技股份有限公司 真空吸附系统及方法
DE102024116164A1 (de) 2024-06-10 2025-12-11 Festo Se & Co. Kg System zur Bearbeitung eines Strukturkörpers
DE102024116166A1 (de) 2024-06-10 2025-12-11 Festo Se & Co. Kg System zur Bearbeitung eines Strukturkörpers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079415A (ja) * 2003-09-02 2005-03-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2011222931A (ja) * 2009-12-28 2011-11-04 Tokyo Electron Ltd 載置台構造及び処理装置

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394712A (en) 1981-03-18 1983-07-19 General Electric Company Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers
JPS63125311U (enExample) 1987-02-09 1988-08-16
JPH0521381A (ja) 1991-07-10 1993-01-29 Sony Corp 半導体製造装置
DE4302695A1 (de) * 1993-02-01 1994-08-04 Eilentropp Kg Elektrische Heizung
US5333095A (en) 1993-05-03 1994-07-26 Maxwell Laboratories, Inc., Sierra Capacitor Filter Division Feedthrough filter capacitor assembly for human implant
JPH07106319A (ja) 1993-09-30 1995-04-21 Hitachi Electron Eng Co Ltd Cvd反応炉の加熱装置の電磁遮蔽方法
US5820448A (en) * 1993-12-27 1998-10-13 Applied Materials, Inc. Carrier head with a layer of conformable material for a chemical mechanical polishing system
JPH07316811A (ja) 1994-05-23 1995-12-05 Hitachi Ltd 多点温度モニタによる温度制御方法及び半導体製造装置
JP3204861B2 (ja) 1994-11-09 2001-09-04 日立電子エンジニアリング株式会社 高周波遮蔽ヒータ
JPH0946875A (ja) 1995-07-27 1997-02-14 Mitsubishi Cable Ind Ltd 電磁遮蔽を施したコネクタ付同軸ケーブル
US5667622A (en) * 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
US5905627A (en) 1997-09-10 1999-05-18 Maxwell Energy Products, Inc. Internally grounded feedthrough filter capacitor
US6991526B2 (en) * 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
JP2002025912A (ja) 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
JP2002187060A (ja) * 2000-10-11 2002-07-02 Ebara Corp 基板保持装置、ポリッシング装置、及び研磨方法
JP4282221B2 (ja) 2000-12-14 2009-06-17 日本碍子株式会社 サセプターのチャンバーへの取付構造およびサセプターのチャンバーへの支持部材
JP2002313144A (ja) 2001-04-09 2002-10-25 Omron Corp サーボモータシステム
JP4502168B2 (ja) * 2001-07-06 2010-07-14 ルネサスエレクトロニクス株式会社 化学機械研磨装置および化学機械研磨方法
US6863771B2 (en) * 2001-07-25 2005-03-08 Micron Technology, Inc. Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods
US7239219B2 (en) * 2001-12-03 2007-07-03 Microfabrica Inc. Miniature RF and microwave components and methods for fabricating such components
EP1453081A4 (en) * 2001-12-06 2008-07-09 Ebara Corp SUBSTRATE MOUNTING AND POLISHING DEVICE
TW541224B (en) * 2001-12-14 2003-07-11 Promos Technologies Inc Chemical mechanical polishing (CMP) apparatus with temperature control
US6736720B2 (en) * 2001-12-26 2004-05-18 Lam Research Corporation Apparatus and methods for controlling wafer temperature in chemical mechanical polishing
KR100511854B1 (ko) 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
CN1669177A (zh) * 2002-06-27 2005-09-14 微制造公司 小型射频和微波构件以及这些构件的制造方法
JP3962661B2 (ja) 2002-08-30 2007-08-22 三菱重工業株式会社 静電チャック支持機構及び支持台装置及びプラズマ処理装置
KR100506934B1 (ko) * 2003-01-10 2005-08-05 삼성전자주식회사 연마장치 및 이를 사용하는 연마방법
WO2004082007A1 (ja) 2003-03-12 2004-09-23 Tokyo Electron Limited 半導体処理用の基板保持構造及びプラズマ処理装置
JP4808453B2 (ja) * 2005-08-26 2011-11-02 株式会社荏原製作所 研磨方法及び研磨装置
JP4838612B2 (ja) * 2006-03-28 2011-12-14 東京エレクトロン株式会社 プラズマ処理装置
JP2007317772A (ja) 2006-05-24 2007-12-06 Shinko Electric Ind Co Ltd 静電チャック装置
JP4903610B2 (ja) 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
DE102007041209B4 (de) * 2007-08-31 2017-11-23 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Polierkopf, der Zonenkontrolle verwendet
WO2009110226A1 (ja) 2008-03-05 2009-09-11 株式会社イー・エム・ディー 高周波アンテナユニット及びプラズマ処理装置
KR101560138B1 (ko) * 2008-06-24 2015-10-14 어플라이드 머티어리얼스, 인코포레이티드 저온 pecvd 애플리케이션을 위한 받침대 히터
US8076580B2 (en) 2009-06-08 2011-12-13 CareFusion 209, Inc. Cable for enhancing biopotential measurements and method of assembling the same
US8274017B2 (en) * 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
JP5604888B2 (ja) 2009-12-21 2014-10-15 住友大阪セメント株式会社 静電チャックの製造方法
TWM423339U (en) * 2011-10-05 2012-02-21 Raytrend Technology Co Ltd Signal shielding wire

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079415A (ja) * 2003-09-02 2005-03-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2011222931A (ja) * 2009-12-28 2011-11-04 Tokyo Electron Ltd 載置台構造及び処理装置

Also Published As

Publication number Publication date
CN104247001A (zh) 2014-12-24
KR20150003229A (ko) 2015-01-08
US9706605B2 (en) 2017-07-11
US20130256966A1 (en) 2013-10-03
WO2013148406A1 (en) 2013-10-03
CN104247001B (zh) 2017-06-06
TWI624901B (zh) 2018-05-21
JP6211053B2 (ja) 2017-10-11
TW201347080A (zh) 2013-11-16
JP2015518275A (ja) 2015-06-25

Similar Documents

Publication Publication Date Title
KR102123366B1 (ko) 피드스루 구조를 가진 기판 지지체
KR102026727B1 (ko) 히터를 구비한 기판 지지체
KR101933560B1 (ko) 히터 및 급속한 온도 변경을 갖는 기판 지지체
KR102213395B1 (ko) 정전 척 기구 및 반도체 처리 장치
KR102648014B1 (ko) 열 초크를 갖는 정전 척
KR101006848B1 (ko) 기판 지지 장치 및 이를 포함하는 기판 처리 장치
KR102498784B1 (ko) 고온 rf 애플리케이션들을 위한 정전 척
JP2019522889A (ja) 高周波結合による高電力静電チャック設計
JPH05109876A (ja) 温度サイクル動作型セラミツク静電式チヤツク
WO2009091214A2 (ko) 기판 지지 장치 및 이를 갖는 기판 처리 장치
WO2022145668A1 (ko) 세라믹 서셉터
WO2011152620A2 (ko) 정전척 및 이를 포함하는 기판 처리 장치
US11996313B2 (en) Member for semiconductor manufacturing apparatus
KR20200106091A (ko) 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리
US20250024561A1 (en) Ceramic heater
CN222886758U (zh) 加热载具以及加工设备
CN223484854U (zh) 加热组件、反应炉以及加工设备
KR20250023089A (ko) 대구경 단결정 성장장치
JP6253289B2 (ja) 気相成長装置及び気相成長用加熱装置
JP2013004356A (ja) プラズマ装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R17 Change to representative recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R17-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6