TWI624901B - 具有饋通結構的基材支撐件 - Google Patents
具有饋通結構的基材支撐件 Download PDFInfo
- Publication number
- TWI624901B TWI624901B TW102110082A TW102110082A TWI624901B TW I624901 B TWI624901 B TW I624901B TW 102110082 A TW102110082 A TW 102110082A TW 102110082 A TW102110082 A TW 102110082A TW I624901 B TWI624901 B TW I624901B
- Authority
- TW
- Taiwan
- Prior art keywords
- disposed
- openings
- conductive mesh
- conductors
- region
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 239000004020 conductor Substances 0.000 claims abstract description 133
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims description 34
- 238000012545 processing Methods 0.000 claims description 23
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 238000012806 monitoring device Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009429 electrical wiring Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000005612 types of electricity Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261617946P | 2012-03-30 | 2012-03-30 | |
| US61/617,946 | 2012-03-30 | ||
| US13/845,492 US9706605B2 (en) | 2012-03-30 | 2013-03-18 | Substrate support with feedthrough structure |
| US13/845,492 | 2013-03-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201347080A TW201347080A (zh) | 2013-11-16 |
| TWI624901B true TWI624901B (zh) | 2018-05-21 |
Family
ID=49233841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102110082A TWI624901B (zh) | 2012-03-30 | 2013-03-21 | 具有饋通結構的基材支撐件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9706605B2 (enExample) |
| JP (1) | JP6211053B2 (enExample) |
| KR (1) | KR102123366B1 (enExample) |
| CN (1) | CN104247001B (enExample) |
| TW (1) | TWI624901B (enExample) |
| WO (1) | WO2013148406A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI821686B (zh) * | 2020-08-27 | 2023-11-11 | 大陸商中微半導體設備(上海)股份有限公司 | 電漿處理裝置 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5973731B2 (ja) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びヒータの温度制御方法 |
| US9543186B2 (en) | 2013-02-01 | 2017-01-10 | Applied Materials, Inc. | Substrate support with controlled sealing gap |
| JP6276919B2 (ja) * | 2013-02-01 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および試料台 |
| US9698074B2 (en) | 2013-09-16 | 2017-07-04 | Applied Materials, Inc. | Heated substrate support with temperature profile control |
| US9673025B2 (en) * | 2015-07-27 | 2017-06-06 | Lam Research Corporation | Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control |
| US10582570B2 (en) * | 2016-01-22 | 2020-03-03 | Applied Materials, Inc. | Sensor system for multi-zone electrostatic chuck |
| US10892179B2 (en) * | 2016-11-08 | 2021-01-12 | Lam Research Corporation | Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods |
| US10079168B2 (en) * | 2016-11-08 | 2018-09-18 | Lam Research Corporation | Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control |
| KR20190042831A (ko) | 2017-10-17 | 2019-04-25 | 주식회사 이에스티 | 정전척 및 진공 챔버의 피드스루 기밀 구조 |
| KR102124303B1 (ko) | 2018-10-15 | 2020-06-18 | 세메스 주식회사 | 기판 처리 장치, 기판 지지 유닛 및 기판 처리 방법 |
| CN113632588B (zh) * | 2019-03-18 | 2024-06-25 | 日本碍子株式会社 | 陶瓷加热器及其制法 |
| JP2021034347A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社デンソーウェーブ | 複合ケーブル及びロボットシステム |
| US11270903B2 (en) * | 2019-12-17 | 2022-03-08 | Applied Materials, Inc. | Multi zone electrostatic chuck |
| US11551951B2 (en) | 2020-05-05 | 2023-01-10 | Applied Materials, Inc. | Methods and systems for temperature control for a substrate |
| KR102326329B1 (ko) | 2021-03-30 | 2021-11-15 | 임하나 | 진공 챔버용 피드 스루 및 그 제조 방법 |
| CN116387224A (zh) * | 2021-12-22 | 2023-07-04 | 拓荆科技股份有限公司 | 真空吸附系统及方法 |
| DE102024116166A1 (de) | 2024-06-10 | 2025-12-11 | Festo Se & Co. Kg | System zur Bearbeitung eines Strukturkörpers |
| DE102024116164A1 (de) | 2024-06-10 | 2025-12-11 | Festo Se & Co. Kg | System zur Bearbeitung eines Strukturkörpers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200405443A (en) * | 2002-06-18 | 2004-04-01 | Anelva Corp | Electrostatic absorbing apparatus |
| TWM423339U (en) * | 2011-10-05 | 2012-02-21 | Raytrend Technology Co Ltd | Signal shielding wire |
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| US4394712A (en) | 1981-03-18 | 1983-07-19 | General Electric Company | Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers |
| JPS63125311U (enExample) | 1987-02-09 | 1988-08-16 | ||
| JPH0521381A (ja) | 1991-07-10 | 1993-01-29 | Sony Corp | 半導体製造装置 |
| DE4302695A1 (de) * | 1993-02-01 | 1994-08-04 | Eilentropp Kg | Elektrische Heizung |
| US5333095A (en) | 1993-05-03 | 1994-07-26 | Maxwell Laboratories, Inc., Sierra Capacitor Filter Division | Feedthrough filter capacitor assembly for human implant |
| JPH07106319A (ja) | 1993-09-30 | 1995-04-21 | Hitachi Electron Eng Co Ltd | Cvd反応炉の加熱装置の電磁遮蔽方法 |
| US5820448A (en) * | 1993-12-27 | 1998-10-13 | Applied Materials, Inc. | Carrier head with a layer of conformable material for a chemical mechanical polishing system |
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| US5667622A (en) * | 1995-08-25 | 1997-09-16 | Siemens Aktiengesellschaft | In-situ wafer temperature control apparatus for single wafer tools |
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| JP2002187060A (ja) * | 2000-10-11 | 2002-07-02 | Ebara Corp | 基板保持装置、ポリッシング装置、及び研磨方法 |
| JP4282221B2 (ja) | 2000-12-14 | 2009-06-17 | 日本碍子株式会社 | サセプターのチャンバーへの取付構造およびサセプターのチャンバーへの支持部材 |
| JP2002313144A (ja) | 2001-04-09 | 2002-10-25 | Omron Corp | サーボモータシステム |
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| JP3962661B2 (ja) | 2002-08-30 | 2007-08-22 | 三菱重工業株式会社 | 静電チャック支持機構及び支持台装置及びプラズマ処理装置 |
| KR100506934B1 (ko) * | 2003-01-10 | 2005-08-05 | 삼성전자주식회사 | 연마장치 및 이를 사용하는 연마방법 |
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| JP2007317772A (ja) | 2006-05-24 | 2007-12-06 | Shinko Electric Ind Co Ltd | 静電チャック装置 |
| JP4903610B2 (ja) | 2007-03-27 | 2012-03-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| DE102007041209B4 (de) * | 2007-08-31 | 2017-11-23 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Polierkopf, der Zonenkontrolle verwendet |
| KR101594636B1 (ko) * | 2008-03-05 | 2016-02-16 | 가부시키가이샤 이엠디 | 고주파 안테나 유닛 및 플라즈마 처리장치 |
| KR101560138B1 (ko) * | 2008-06-24 | 2015-10-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 저온 pecvd 애플리케이션을 위한 받침대 히터 |
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-
2013
- 2013-03-18 US US13/845,492 patent/US9706605B2/en active Active
- 2013-03-19 WO PCT/US2013/032874 patent/WO2013148406A1/en not_active Ceased
- 2013-03-19 KR KR1020147030437A patent/KR102123366B1/ko active Active
- 2013-03-19 CN CN201380016546.XA patent/CN104247001B/zh active Active
- 2013-03-19 JP JP2015503364A patent/JP6211053B2/ja active Active
- 2013-03-21 TW TW102110082A patent/TWI624901B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200405443A (en) * | 2002-06-18 | 2004-04-01 | Anelva Corp | Electrostatic absorbing apparatus |
| TWM423339U (en) * | 2011-10-05 | 2012-02-21 | Raytrend Technology Co Ltd | Signal shielding wire |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI821686B (zh) * | 2020-08-27 | 2023-11-11 | 大陸商中微半導體設備(上海)股份有限公司 | 電漿處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104247001B (zh) | 2017-06-06 |
| CN104247001A (zh) | 2014-12-24 |
| US20130256966A1 (en) | 2013-10-03 |
| WO2013148406A1 (en) | 2013-10-03 |
| JP6211053B2 (ja) | 2017-10-11 |
| JP2015518275A (ja) | 2015-06-25 |
| KR20150003229A (ko) | 2015-01-08 |
| KR102123366B1 (ko) | 2020-06-16 |
| TW201347080A (zh) | 2013-11-16 |
| US9706605B2 (en) | 2017-07-11 |
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