KR102115280B1 - 나노임프린트 리소그래피에서의 충전 시간을 줄이기 위한 기판 예비처리 - Google Patents

나노임프린트 리소그래피에서의 충전 시간을 줄이기 위한 기판 예비처리 Download PDF

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KR102115280B1
KR102115280B1 KR1020160114735A KR20160114735A KR102115280B1 KR 102115280 B1 KR102115280 B1 KR 102115280B1 KR 1020160114735 A KR1020160114735 A KR 1020160114735A KR 20160114735 A KR20160114735 A KR 20160114735A KR 102115280 B1 KR102115280 B1 KR 102115280B1
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imprint
imprint resist
substrate
coating
liquid
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KR20170030051A (ko
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니야즈 쿠스나트디노프
티모시 브라이언 스타초위악
웨이준 리우
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캐논 가부시끼가이샤
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Priority claimed from US15/004,679 external-priority patent/US20170068159A1/en
Priority claimed from US15/195,789 external-priority patent/US20170066208A1/en
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Priority to KR1020200060145A priority Critical patent/KR102466726B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
KR1020160114735A 2015-09-08 2016-09-07 나노임프린트 리소그래피에서의 충전 시간을 줄이기 위한 기판 예비처리 Active KR102115280B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020200060145A KR102466726B1 (ko) 2015-09-08 2020-05-20 나노임프린트 리소그래피에서의 충전 시간을 줄이기 위한 기판 예비처리

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562215316P 2015-09-08 2015-09-08
US62/215,316 2015-09-08
US15/004,679 US20170068159A1 (en) 2015-09-08 2016-01-22 Substrate pretreatment for reducing fill time in nanoimprint lithography
US15/004,679 2016-01-22
US15/195,789 2016-06-28
US15/195,789 US20170066208A1 (en) 2015-09-08 2016-06-28 Substrate pretreatment for reducing fill time in nanoimprint lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020200060145A Division KR102466726B1 (ko) 2015-09-08 2020-05-20 나노임프린트 리소그래피에서의 충전 시간을 줄이기 위한 기판 예비처리

Publications (2)

Publication Number Publication Date
KR20170030051A KR20170030051A (ko) 2017-03-16
KR102115280B1 true KR102115280B1 (ko) 2020-05-26

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KR1020160114735A Active KR102115280B1 (ko) 2015-09-08 2016-09-07 나노임프린트 리소그래피에서의 충전 시간을 줄이기 위한 기판 예비처리
KR1020200060145A Active KR102466726B1 (ko) 2015-09-08 2020-05-20 나노임프린트 리소그래피에서의 충전 시간을 줄이기 위한 기판 예비처리

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JP (2) JP6141500B2 (enExample)
KR (2) KR102115280B1 (enExample)
CN (2) CN106842835B (enExample)
SG (2) SG10201607459WA (enExample)
TW (1) TWI708118B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3347410B1 (en) * 2015-09-08 2024-06-19 Canon Kabushiki Kaisha Substrate pretreatment and etch uniformity in nanoimprint lithography
US10829644B2 (en) * 2016-03-31 2020-11-10 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10845700B2 (en) 2016-03-31 2020-11-24 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10754245B2 (en) 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10754244B2 (en) * 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10883006B2 (en) * 2016-03-31 2021-01-05 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
TW201817582A (zh) * 2016-09-16 2018-05-16 日商富士軟片股份有限公司 圖案形成方法及半導體元件的製造方法
TW201825617A (zh) * 2016-09-16 2018-07-16 日商富士軟片股份有限公司 壓印用底漆層形成用組成物、壓印用底漆層及積層體
JP6741855B2 (ja) * 2017-02-28 2020-08-19 富士フイルム株式会社 プライマ層形成用組成物、キット、プライマ層および積層体
US10317793B2 (en) * 2017-03-03 2019-06-11 Canon Kabushiki Kaisha Substrate pretreatment compositions for nanoimprint lithography
CN110392919B (zh) 2017-03-08 2024-01-16 佳能株式会社 图案形成方法和加工基板、光学部件和石英模具复制品的制造方法以及用于压印预处理的涂覆材料及其与压印抗蚀剂的组合
JP7328888B2 (ja) 2017-03-08 2023-08-17 キヤノン株式会社 硬化物パターンの製造方法、光学部品、回路基板および石英モールドレプリカの製造方法、ならびにインプリント前処理コート用材料およびその硬化物
JP7039865B2 (ja) * 2017-05-26 2022-03-23 大日本印刷株式会社 パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム
WO2018230488A1 (ja) * 2017-06-14 2018-12-20 富士フイルム株式会社 キット、積層体、積層体の製造方法、硬化物パターンの製造方法および回路基板の製造方法
WO2019031409A1 (ja) * 2017-08-10 2019-02-14 キヤノン株式会社 パターン形成方法
JP6754344B2 (ja) * 2017-09-26 2020-09-09 富士フイルム株式会社 インプリント用下層膜形成用組成物、キット、積層体、積層体の製造方法、硬化物パターンの製造方法、回路基板の製造方法
TWI780227B (zh) * 2017-09-26 2022-10-11 日商富士軟片股份有限公司 壓印用下層膜形成用組成物、壓印用下層膜形成用組成物及壓印用硬化性組成物之套組、壓印用硬化性組成物、積層體、積層體的製造方法、硬化物圖案的製造方法及電路基板的製造方法
JP7034696B2 (ja) 2017-12-14 2022-03-14 キヤノン株式会社 硬化物パターンの製造方法、加工基板の製造方法、回路基板の製造方法、電子部品の製造方法、およびインプリントモールドの製造方法
TWI783115B (zh) 2018-02-14 2022-11-11 日商富士軟片股份有限公司 試劑盒、壓印用下層膜形成組成物、圖案形成方法、半導體器件的製造方法
WO2020059603A1 (ja) * 2018-09-18 2020-03-26 富士フイルム株式会社 インプリント用積層体、インプリント用積層体の製造方法、パターン形成方法およびキット
JP7096898B2 (ja) * 2018-09-28 2022-07-06 富士フイルム株式会社 インプリント用下層膜形成用組成物、インプリント用下層膜形成用組成物の製造方法、パターン製造方法、半導体素子の製造方法、硬化物およびキット
US10780682B2 (en) * 2018-12-20 2020-09-22 Canon Kabushiki Kaisha Liquid adhesion composition, multi-layer structure and method of making said structure
US20200308320A1 (en) * 2019-03-26 2020-10-01 Canon Kabushiki Kaisha Curable composition comprising dual-functional photoinitiator
JP7222811B2 (ja) 2019-06-04 2023-02-15 キオクシア株式会社 インプリント装置、インプリント方法、及び半導体装置の製造方法
JP2021044299A (ja) 2019-09-06 2021-03-18 キオクシア株式会社 インプリント方法、半導体装置の製造方法、及びインプリント装置
CN116339072A (zh) * 2023-03-13 2023-06-27 太仓斯迪克新材料科技有限公司 紫外光固化胶的压印工艺
CN117410168B (zh) * 2023-12-13 2024-03-29 江西兆驰半导体有限公司 一种图形化蓝宝石衬底及其制备方法
CN117650156A (zh) * 2023-12-14 2024-03-05 英特盛科技股份有限公司 多层次封装微结构制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080199816A1 (en) * 2000-07-17 2008-08-21 The University Of Texas Board Of Regents Method of Automatic Fluid Dispensing for Imprint Lithography Processes
US20090085255A1 (en) * 2007-09-28 2009-04-02 Hitachi, Ltd. Photo nanoimprint lithography
JP2009208409A (ja) * 2008-03-05 2009-09-17 Toyo Gosei Kogyo Kk パターン形成方法
JP2010530641A (ja) 2007-06-18 2010-09-09 モレキュラー・インプリンツ・インコーポレーテッド インプリント・リソグラフィのための溶媒支援層の形成
JP2011096766A (ja) 2009-10-28 2011-05-12 Toshiba Corp インプリントシステムおよびインプリント方法
WO2011126131A1 (en) 2010-04-07 2011-10-13 Fujifilm Corporation Pattern forming method and process for producing pattern substrates
WO2011155602A1 (ja) 2010-06-11 2011-12-15 Hoya株式会社 密着補助層付き基板、モールドの製造方法及びマスターモールドの製造方法
WO2013191228A1 (en) 2012-06-18 2013-12-27 Fujifilm Corporation Under layer film-forming composition for imprints and method of forming pattern
US20150228498A1 (en) 2012-11-02 2015-08-13 Fujifilm Corporation Method for manufacturing adhesive film for imprints and method for forming patterns

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100517584C (zh) * 2003-12-19 2009-07-22 北卡罗来纳大学查珀尔希尔分校 使用软或压印光刻法制备隔离的微米-和纳米-结构的方法
KR101366505B1 (ko) * 2005-06-10 2014-02-24 오브듀캇 아베 고리형 올레핀 공중합체를 포함하는 임프린트 스탬프
US8557351B2 (en) * 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8846195B2 (en) * 2005-07-22 2014-09-30 Canon Nanotechnologies, Inc. Ultra-thin polymeric adhesion layer
CN100437155C (zh) * 2006-02-17 2008-11-26 开曼群岛商亚岗科技股份有限公司 树脂层表面微结构的模带对辊轮成型方法及光学薄膜
JP4940884B2 (ja) * 2006-10-17 2012-05-30 大日本印刷株式会社 パターン形成体の製造方法
GB0809062D0 (en) * 2008-05-19 2008-06-25 Zbd Displays Ltd Method for patterning a surface using selective adhesion
JP4544372B2 (ja) * 2008-08-22 2010-09-15 コニカミノルタオプト株式会社 基板の製造方法
EP2199854B1 (en) * 2008-12-19 2015-12-16 Obducat AB Hybrid polymer mold for nano-imprinting and method for making the same
JP5316132B2 (ja) * 2009-03-18 2013-10-16 大日本印刷株式会社 ナノインプリント用モールド
JP5658513B2 (ja) * 2010-08-27 2015-01-28 学校法人東京電機大学 パターンの形成方法
JP5767615B2 (ja) * 2011-10-07 2015-08-19 富士フイルム株式会社 インプリント用下層膜組成物およびこれを用いたパターン形成方法
US9278857B2 (en) * 2012-01-31 2016-03-08 Seagate Technology Inc. Method of surface tension control to reduce trapped gas bubbles
JP6029558B2 (ja) * 2013-09-30 2016-11-24 富士フイルム株式会社 光インプリント用硬化性組成物、パターン形成方法、微細パターン、および半導体デバイスの製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080199816A1 (en) * 2000-07-17 2008-08-21 The University Of Texas Board Of Regents Method of Automatic Fluid Dispensing for Imprint Lithography Processes
JP2010530641A (ja) 2007-06-18 2010-09-09 モレキュラー・インプリンツ・インコーポレーテッド インプリント・リソグラフィのための溶媒支援層の形成
US20090085255A1 (en) * 2007-09-28 2009-04-02 Hitachi, Ltd. Photo nanoimprint lithography
JP2009208409A (ja) * 2008-03-05 2009-09-17 Toyo Gosei Kogyo Kk パターン形成方法
JP2011096766A (ja) 2009-10-28 2011-05-12 Toshiba Corp インプリントシステムおよびインプリント方法
WO2011126131A1 (en) 2010-04-07 2011-10-13 Fujifilm Corporation Pattern forming method and process for producing pattern substrates
WO2011155602A1 (ja) 2010-06-11 2011-12-15 Hoya株式会社 密着補助層付き基板、モールドの製造方法及びマスターモールドの製造方法
WO2013191228A1 (en) 2012-06-18 2013-12-27 Fujifilm Corporation Under layer film-forming composition for imprints and method of forming pattern
US20150228498A1 (en) 2012-11-02 2015-08-13 Fujifilm Corporation Method for manufacturing adhesive film for imprints and method for forming patterns

Also Published As

Publication number Publication date
JP6723947B2 (ja) 2020-07-15
JP6141500B2 (ja) 2017-06-07
KR102466726B1 (ko) 2022-11-15
JP2017055108A (ja) 2017-03-16
CN106842835B (zh) 2020-12-25
SG10201607459WA (en) 2017-04-27
TWI708118B (zh) 2020-10-21
CN106842835A (zh) 2017-06-13
TW201723649A (zh) 2017-07-01
JP2017152705A (ja) 2017-08-31
KR20200058357A (ko) 2020-05-27
SG10202102937RA (en) 2021-04-29
CN111708260B (zh) 2023-11-10
CN111708260A (zh) 2020-09-25
KR20170030051A (ko) 2017-03-16

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