TWI708118B - 奈米壓印微影方法，奈米壓印微影堆疊，製造半導體裝置的方法及以此方法製造之半導體裝置，預處理奈米壓印微影基材的方法，及壓印方法 - Google Patents

奈米壓印微影方法，奈米壓印微影堆疊，製造半導體裝置的方法及以此方法製造之半導體裝置，預處理奈米壓印微影基材的方法，及壓印方法 Download PDF

Info

Publication number
TWI708118B
TWI708118B TW105127284A TW105127284A TWI708118B TW I708118 B TWI708118 B TW I708118B TW 105127284 A TW105127284 A TW 105127284A TW 105127284 A TW105127284 A TW 105127284A TW I708118 B TWI708118 B TW I708118B
Authority
TW
Taiwan
Prior art keywords
photoresist material
substrate
coating
pretreatment
pretreatment composition
Prior art date
Application number
TW105127284A
Other languages
English (en)
Chinese (zh)
Other versions
TW201723649A (zh
Inventor
尼亞茲 克斯迪諾夫
堤墨希 史塔維克
劉衛軍
Original Assignee
日商佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/004,679 external-priority patent/US20170068159A1/en
Priority claimed from US15/195,789 external-priority patent/US20170066208A1/en
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW201723649A publication Critical patent/TW201723649A/zh
Application granted granted Critical
Publication of TWI708118B publication Critical patent/TWI708118B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polymerisation Methods In General (AREA)
  • Paints Or Removers (AREA)
TW105127284A 2015-09-08 2016-08-25 奈米壓印微影方法，奈米壓印微影堆疊，製造半導體裝置的方法及以此方法製造之半導體裝置，預處理奈米壓印微影基材的方法，及壓印方法 TWI708118B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562215316P 2015-09-08 2015-09-08
US62/215,316 2015-09-08
US15/004,679 2016-01-22
US15/004,679 US20170068159A1 (en) 2015-09-08 2016-01-22 Substrate pretreatment for reducing fill time in nanoimprint lithography
US15/195,789 2016-06-28
US15/195,789 US20170066208A1 (en) 2015-09-08 2016-06-28 Substrate pretreatment for reducing fill time in nanoimprint lithography

Publications (2)

Publication Number Publication Date
TW201723649A TW201723649A (zh) 2017-07-01
TWI708118B true TWI708118B (zh) 2020-10-21

Family

ID=58317450

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105127284A TWI708118B (zh) 2015-09-08 2016-08-25 奈米壓印微影方法，奈米壓印微影堆疊，製造半導體裝置的方法及以此方法製造之半導體裝置，預處理奈米壓印微影基材的方法，及壓印方法

Country Status (5)

Country Link
JP (2) JP6141500B2 (enExample)
KR (2) KR102115280B1 (enExample)
CN (2) CN106842835B (enExample)
SG (2) SG10202102937RA (enExample)
TW (1) TWI708118B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017044421A1 (en) * 2015-09-08 2017-03-16 Canon Kabushiki Kaisha Substrate pretreatment and etch uniformity in nanoimprint lithography
US10754245B2 (en) * 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10883006B2 (en) * 2016-03-31 2021-01-05 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10829644B2 (en) * 2016-03-31 2020-11-10 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10845700B2 (en) 2016-03-31 2020-11-24 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10754244B2 (en) * 2016-03-31 2020-08-25 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
TW201817582A (zh) * 2016-09-16 2018-05-16 日商富士軟片股份有限公司 圖案形成方法及半導體元件的製造方法
TW201825617A (zh) * 2016-09-16 2018-07-16 日商富士軟片股份有限公司 壓印用底漆層形成用組成物、壓印用底漆層及積層體
WO2018159576A1 (ja) * 2017-02-28 2018-09-07 富士フイルム株式会社 プライマ層形成用組成物、キット、プライマ層および積層体
US10317793B2 (en) * 2017-03-03 2019-06-11 Canon Kabushiki Kaisha Substrate pretreatment compositions for nanoimprint lithography
JP7425602B2 (ja) * 2017-03-08 2024-01-31 キヤノン株式会社 パターン形成方法、ならびに加工基板、光学部品及び石英モールドレプリカの製造方法、ならびにインプリント前処理コーティング材料及びそれとインプリントレジストとのセット
CN110546734B (zh) 2017-03-08 2024-04-02 佳能株式会社 固化物图案的制造方法和光学部件、电路板和石英模具复制品的制造方法以及用于压印预处理的涂覆材料及其固化物
JP7039865B2 (ja) * 2017-05-26 2022-03-23 大日本印刷株式会社 パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム
JP6737958B2 (ja) * 2017-06-14 2020-08-12 富士フイルム株式会社 キット、積層体、積層体の製造方法、硬化物パターンの製造方法および回路基板の製造方法
KR102419881B1 (ko) * 2017-08-10 2022-07-12 캐논 가부시끼가이샤 패턴 형성 방법
WO2019065526A1 (ja) * 2017-09-26 2019-04-04 富士フイルム株式会社 インプリント用下層膜形成用組成物、キット、インプリント用硬化性組成物、積層体、積層体の製造方法、硬化物パターンの製造方法および回路基板の製造方法
JP6754344B2 (ja) * 2017-09-26 2020-09-09 富士フイルム株式会社 インプリント用下層膜形成用組成物、キット、積層体、積層体の製造方法、硬化物パターンの製造方法、回路基板の製造方法
JP7034696B2 (ja) 2017-12-14 2022-03-14 キヤノン株式会社 硬化物パターンの製造方法、加工基板の製造方法、回路基板の製造方法、電子部品の製造方法、およびインプリントモールドの製造方法
TWI783115B (zh) 2018-02-14 2022-11-11 日商富士軟片股份有限公司 試劑盒、壓印用下層膜形成組成物、圖案形成方法、半導體器件的製造方法
WO2020059603A1 (ja) * 2018-09-18 2020-03-26 富士フイルム株式会社 インプリント用積層体、インプリント用積層体の製造方法、パターン形成方法およびキット
JP7096898B2 (ja) * 2018-09-28 2022-07-06 富士フイルム株式会社 インプリント用下層膜形成用組成物、インプリント用下層膜形成用組成物の製造方法、パターン製造方法、半導体素子の製造方法、硬化物およびキット
US10780682B2 (en) * 2018-12-20 2020-09-22 Canon Kabushiki Kaisha Liquid adhesion composition, multi-layer structure and method of making said structure
US20200308320A1 (en) * 2019-03-26 2020-10-01 Canon Kabushiki Kaisha Curable composition comprising dual-functional photoinitiator
JP7222811B2 (ja) 2019-06-04 2023-02-15 キオクシア株式会社 インプリント装置、インプリント方法、及び半導体装置の製造方法
JP2021044299A (ja) 2019-09-06 2021-03-18 キオクシア株式会社 インプリント方法、半導体装置の製造方法、及びインプリント装置
CN116339072A (zh) * 2023-03-13 2023-06-27 太仓斯迪克新材料科技有限公司 紫外光固化胶的压印工艺
CN117410168B (zh) * 2023-12-13 2024-03-29 江西兆驰半导体有限公司 一种图形化蓝宝石衬底及其制备方法
CN117650156A (zh) * 2023-12-14 2024-03-05 英特盛科技股份有限公司 多层次封装微结构制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201030076A (en) * 2008-12-19 2010-08-16 Obducat Ab Process and method for modifying polymer film surface interaction
JP2010530641A (ja) * 2007-06-18 2010-09-09 モレキュラー・インプリンツ・インコーポレーテッド インプリント・リソグラフィのための溶媒支援層の形成
JP2011096766A (ja) * 2009-10-28 2011-05-12 Toshiba Corp インプリントシステムおよびインプリント方法
JP2012048183A (ja) * 2010-08-27 2012-03-08 Tokyo Denki Univ レジストパターンの形成方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1262883C (zh) * 2000-07-17 2006-07-05 得克萨斯州大学系统董事会 影印用于平版印刷工艺中的自动化液体分配的方法和系统
CN100517584C (zh) * 2003-12-19 2009-07-22 北卡罗来纳大学查珀尔希尔分校 使用软或压印光刻法制备隔离的微米-和纳米-结构的方法
KR101366505B1 (ko) * 2005-06-10 2014-02-24 오브듀캇 아베 고리형 올레핀 공중합체를 포함하는 임프린트 스탬프
US8557351B2 (en) * 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8846195B2 (en) * 2005-07-22 2014-09-30 Canon Nanotechnologies, Inc. Ultra-thin polymeric adhesion layer
CN100437155C (zh) * 2006-02-17 2008-11-26 开曼群岛商亚岗科技股份有限公司 树脂层表面微结构的模带对辊轮成型方法及光学薄膜
JP4940884B2 (ja) * 2006-10-17 2012-05-30 大日本印刷株式会社 パターン形成体の製造方法
JP4467611B2 (ja) * 2007-09-28 2010-05-26 株式会社日立製作所 光インプリント方法
JP5065101B2 (ja) * 2008-03-05 2012-10-31 東洋合成工業株式会社 パターン形成方法
GB0809062D0 (en) * 2008-05-19 2008-06-25 Zbd Displays Ltd Method for patterning a surface using selective adhesion
US8945454B2 (en) * 2008-08-22 2015-02-03 Konica Minolta Opto, Inc. Substrate manufacturing method, substrate manufactured by the substrate manufacturing method and magnetic recording medium using the substrate
JP5316132B2 (ja) * 2009-03-18 2013-10-16 大日本印刷株式会社 ナノインプリント用モールド
JP2011222647A (ja) * 2010-04-07 2011-11-04 Fujifilm Corp パターン形成方法及びパターン基板製造方法
US20130126472A1 (en) * 2010-06-11 2013-05-23 Hoya Corporation Substrate with adhesion promoting layer, method for producing mold, and method for producing master mold
JP5767615B2 (ja) * 2011-10-07 2015-08-19 富士フイルム株式会社 インプリント用下層膜組成物およびこれを用いたパターン形成方法
US9278857B2 (en) * 2012-01-31 2016-03-08 Seagate Technology Inc. Method of surface tension control to reduce trapped gas bubbles
JP5899145B2 (ja) * 2012-06-18 2016-04-06 富士フイルム株式会社 インプリント用下層膜形成組成物およびパターン形成方法
JP2014093385A (ja) * 2012-11-02 2014-05-19 Fujifilm Corp インプリント用密着膜の製造方法およびパターン形成方法
JP6029558B2 (ja) * 2013-09-30 2016-11-24 富士フイルム株式会社 光インプリント用硬化性組成物、パターン形成方法、微細パターン、および半導体デバイスの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010530641A (ja) * 2007-06-18 2010-09-09 モレキュラー・インプリンツ・インコーポレーテッド インプリント・リソグラフィのための溶媒支援層の形成
TW201030076A (en) * 2008-12-19 2010-08-16 Obducat Ab Process and method for modifying polymer film surface interaction
JP2011096766A (ja) * 2009-10-28 2011-05-12 Toshiba Corp インプリントシステムおよびインプリント方法
JP2012048183A (ja) * 2010-08-27 2012-03-08 Tokyo Denki Univ レジストパターンの形成方法

Also Published As

Publication number Publication date
JP6723947B2 (ja) 2020-07-15
KR102466726B1 (ko) 2022-11-15
KR102115280B1 (ko) 2020-05-26
TW201723649A (zh) 2017-07-01
JP6141500B2 (ja) 2017-06-07
CN111708260B (zh) 2023-11-10
CN106842835B (zh) 2020-12-25
JP2017152705A (ja) 2017-08-31
CN106842835A (zh) 2017-06-13
CN111708260A (zh) 2020-09-25
KR20170030051A (ko) 2017-03-16
KR20200058357A (ko) 2020-05-27
SG10202102937RA (en) 2021-04-29
SG10201607459WA (en) 2017-04-27
JP2017055108A (ja) 2017-03-16

Similar Documents

Publication Publication Date Title
TWI708118B (zh) 奈米壓印微影方法，奈米壓印微影堆疊，製造半導體裝置的方法及以此方法製造之半導體裝置，預處理奈米壓印微影基材的方法，及壓印方法
US10668677B2 (en) Substrate pretreatment for reducing fill time in nanoimprint lithography
CN110366703B (zh) 用于纳米压印光刻的基板预处理组合物
TWI712484B (zh) 具有氟化的光引發劑之壓印光阻及用於減少奈米壓印微影術之填充時間的基材預處理
CN108885395B (zh) 在纳米压印光刻中的固化基材预处理组合物
US10488753B2 (en) Substrate pretreatment and etch uniformity in nanoimprint lithography
US20170068159A1 (en) Substrate pretreatment for reducing fill time in nanoimprint lithography
CN108026330B (zh) 在纳米压印光刻中的基材预处理和蚀刻均匀性