CN106842835B - 在纳米压印光刻中减少填充时间的基材预处理 - Google Patents

在纳米压印光刻中减少填充时间的基材预处理 Download PDF

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CN106842835B
CN106842835B CN201610811661.1A CN201610811661A CN106842835B CN 106842835 B CN106842835 B CN 106842835B CN 201610811661 A CN201610811661 A CN 201610811661A CN 106842835 B CN106842835 B CN 106842835B
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imprint resist
imprint
substrate
pretreatment composition
liquid
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Chinese (zh)
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CN106842835A (zh
Inventor
尼亚兹·科斯纳蒂诺夫
蒂莫西·布赖恩·斯塔霍维亚克
刘卫军
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Canon Inc
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Canon Inc
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Priority claimed from US15/004,679 external-priority patent/US20170068159A1/en
Priority claimed from US15/195,789 external-priority patent/US20170066208A1/en
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Priority to CN202010752918.7A priority Critical patent/CN111708260B/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polymerisation Methods In General (AREA)
  • Paints Or Removers (AREA)
CN201610811661.1A 2015-09-08 2016-09-08 在纳米压印光刻中减少填充时间的基材预处理 Active CN106842835B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010752918.7A CN111708260B (zh) 2015-09-08 2016-09-08 在纳米压印光刻中减少填充时间的基材预处理

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562215316P 2015-09-08 2015-09-08
US62/215,316 2015-09-08
US15/004,679 2016-01-22
US15/004,679 US20170068159A1 (en) 2015-09-08 2016-01-22 Substrate pretreatment for reducing fill time in nanoimprint lithography
US15/195,789 2016-06-28
US15/195,789 US20170066208A1 (en) 2015-09-08 2016-06-28 Substrate pretreatment for reducing fill time in nanoimprint lithography

Related Child Applications (1)

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CN202010752918.7A Division CN111708260B (zh) 2015-09-08 2016-09-08 在纳米压印光刻中减少填充时间的基材预处理

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CN106842835A CN106842835A (zh) 2017-06-13
CN106842835B true CN106842835B (zh) 2020-12-25

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CN202010752918.7A Active CN111708260B (zh) 2015-09-08 2016-09-08 在纳米压印光刻中减少填充时间的基材预处理

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JP (2) JP6141500B2 (enExample)
KR (2) KR102115280B1 (enExample)
CN (2) CN106842835B (enExample)
SG (2) SG10202102937RA (enExample)
TW (1) TWI708118B (enExample)

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US10883006B2 (en) * 2016-03-31 2021-01-05 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10829644B2 (en) * 2016-03-31 2020-11-10 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
US10845700B2 (en) 2016-03-31 2020-11-24 Canon Kabushiki Kaisha Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold
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US10317793B2 (en) * 2017-03-03 2019-06-11 Canon Kabushiki Kaisha Substrate pretreatment compositions for nanoimprint lithography
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CN110546734B (zh) 2017-03-08 2024-04-02 佳能株式会社 固化物图案的制造方法和光学部件、电路板和石英模具复制品的制造方法以及用于压印预处理的涂覆材料及其固化物
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KR102419881B1 (ko) * 2017-08-10 2022-07-12 캐논 가부시끼가이샤 패턴 형성 방법
WO2019065526A1 (ja) * 2017-09-26 2019-04-04 富士フイルム株式会社 インプリント用下層膜形成用組成物、キット、インプリント用硬化性組成物、積層体、積層体の製造方法、硬化物パターンの製造方法および回路基板の製造方法
JP6754344B2 (ja) * 2017-09-26 2020-09-09 富士フイルム株式会社 インプリント用下層膜形成用組成物、キット、積層体、積層体の製造方法、硬化物パターンの製造方法、回路基板の製造方法
JP7034696B2 (ja) 2017-12-14 2022-03-14 キヤノン株式会社 硬化物パターンの製造方法、加工基板の製造方法、回路基板の製造方法、電子部品の製造方法、およびインプリントモールドの製造方法
TWI783115B (zh) 2018-02-14 2022-11-11 日商富士軟片股份有限公司 試劑盒、壓印用下層膜形成組成物、圖案形成方法、半導體器件的製造方法
WO2020059603A1 (ja) * 2018-09-18 2020-03-26 富士フイルム株式会社 インプリント用積層体、インプリント用積層体の製造方法、パターン形成方法およびキット
JP7096898B2 (ja) * 2018-09-28 2022-07-06 富士フイルム株式会社 インプリント用下層膜形成用組成物、インプリント用下層膜形成用組成物の製造方法、パターン製造方法、半導体素子の製造方法、硬化物およびキット
US10780682B2 (en) * 2018-12-20 2020-09-22 Canon Kabushiki Kaisha Liquid adhesion composition, multi-layer structure and method of making said structure
US20200308320A1 (en) * 2019-03-26 2020-10-01 Canon Kabushiki Kaisha Curable composition comprising dual-functional photoinitiator
JP7222811B2 (ja) 2019-06-04 2023-02-15 キオクシア株式会社 インプリント装置、インプリント方法、及び半導体装置の製造方法
JP2021044299A (ja) 2019-09-06 2021-03-18 キオクシア株式会社 インプリント方法、半導体装置の製造方法、及びインプリント装置
CN116339072A (zh) * 2023-03-13 2023-06-27 太仓斯迪克新材料科技有限公司 紫外光固化胶的压印工艺
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Publication number Publication date
JP6723947B2 (ja) 2020-07-15
KR102466726B1 (ko) 2022-11-15
KR102115280B1 (ko) 2020-05-26
TW201723649A (zh) 2017-07-01
JP6141500B2 (ja) 2017-06-07
CN111708260B (zh) 2023-11-10
JP2017152705A (ja) 2017-08-31
CN106842835A (zh) 2017-06-13
CN111708260A (zh) 2020-09-25
KR20170030051A (ko) 2017-03-16
KR20200058357A (ko) 2020-05-27
SG10202102937RA (en) 2021-04-29
SG10201607459WA (en) 2017-04-27
TWI708118B (zh) 2020-10-21
JP2017055108A (ja) 2017-03-16

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