KR102102585B1 - 반도체 장치 및 반도체 장치 제작 방법 - Google Patents

반도체 장치 및 반도체 장치 제작 방법 Download PDF

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KR102102585B1
KR102102585B1 KR1020147020191A KR20147020191A KR102102585B1 KR 102102585 B1 KR102102585 B1 KR 102102585B1 KR 1020147020191 A KR1020147020191 A KR 1020147020191A KR 20147020191 A KR20147020191 A KR 20147020191A KR 102102585 B1 KR102102585 B1 KR 102102585B1
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film
oxide semiconductor
insulating film
oxide
semiconductor film
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KR20140107529A (ko
Inventor
토시나리 사사끼
슈헤이 요코야마
다카시 하모치
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020147020191A 2011-12-20 2012-12-12 반도체 장치 및 반도체 장치 제작 방법 Expired - Fee Related KR102102585B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011278889 2011-12-20
JPJP-P-2011-278889 2011-12-20
PCT/JP2012/082857 WO2013094621A1 (en) 2011-12-20 2012-12-12 Semiconductor device and method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
KR20140107529A KR20140107529A (ko) 2014-09-04
KR102102585B1 true KR102102585B1 (ko) 2020-04-22

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US (1) US9070778B2 (https=)
JP (3) JP2013149953A (https=)
KR (1) KR102102585B1 (https=)
TW (1) TWI570925B (https=)
WO (1) WO2013094621A1 (https=)

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US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
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US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR102227591B1 (ko) 2012-10-17 2021-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI620323B (zh) * 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 半導體裝置
KR102304824B1 (ko) 2013-08-09 2021-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102500994B1 (ko) * 2014-10-17 2023-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널
US9837547B2 (en) * 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
EP3290913B1 (de) * 2016-09-02 2022-07-27 ION-TOF Technologies GmbH Sekundärionenmassenspektrokopisches verfahren, system und verwendungen hiervon
TW202129966A (zh) 2016-10-21 2021-08-01 日商半導體能源研究所股份有限公司 複合氧化物及電晶體
US11545580B2 (en) * 2017-11-15 2023-01-03 South China University Of Technology Metal oxide (MO semiconductor and thin-film transistor and application thereof
CN110726673B (zh) * 2018-07-17 2022-02-18 中国科学院福建物质结构研究所 用于铁电晶体相变检测的光学探针及其检测方法
JP7363331B2 (ja) 2019-10-10 2023-10-18 スズキ株式会社 車両の風防装置

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