KR102080207B1 - 도금 장치 - Google Patents

도금 장치 Download PDF

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Publication number
KR102080207B1
KR102080207B1 KR1020140025107A KR20140025107A KR102080207B1 KR 102080207 B1 KR102080207 B1 KR 102080207B1 KR 1020140025107 A KR1020140025107 A KR 1020140025107A KR 20140025107 A KR20140025107 A KR 20140025107A KR 102080207 B1 KR102080207 B1 KR 102080207B1
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KR
South Korea
Prior art keywords
substrate holder
substrate
lifter
transporter
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020140025107A
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English (en)
Korean (ko)
Other versions
KR20140109319A (ko
Inventor
요시오 미나미
류야 고이즈미
Original Assignee
가부시키가이샤 에바라 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20140109319A publication Critical patent/KR20140109319A/ko
Application granted granted Critical
Publication of KR102080207B1 publication Critical patent/KR102080207B1/ko
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C23C18/163—Supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemically Coating (AREA)
KR1020140025107A 2013-03-04 2014-03-03 도금 장치 Expired - Fee Related KR102080207B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013041493A JP6077886B2 (ja) 2013-03-04 2013-03-04 めっき装置
JPJP-P-2013-041493 2013-03-04

Publications (2)

Publication Number Publication Date
KR20140109319A KR20140109319A (ko) 2014-09-15
KR102080207B1 true KR102080207B1 (ko) 2020-02-24

Family

ID=51420276

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140025107A Expired - Fee Related KR102080207B1 (ko) 2013-03-04 2014-03-03 도금 장치

Country Status (4)

Country Link
US (2) US9624594B2 (enExample)
JP (1) JP6077886B2 (enExample)
KR (1) KR102080207B1 (enExample)
TW (1) TWI598472B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239417B2 (ja) 2014-03-24 2017-11-29 株式会社荏原製作所 基板処理装置
US10024613B2 (en) * 2014-07-24 2018-07-17 Stoneage, Inc. Flexible tube cleaning lance positioner frame apparatus
EP3172519B1 (en) 2014-07-24 2018-07-18 Stoneage, Inc. Flexible tube cleaning lance positioner frame apparatus
JP2016089204A (ja) * 2014-10-31 2016-05-23 ダイハツ工業株式会社 電着塗装設備
JP6675257B2 (ja) * 2016-04-14 2020-04-01 株式会社荏原製作所 めっき装置及びめっき方法
KR102421298B1 (ko) * 2016-09-08 2022-07-15 가부시키가이샤 에바라 세이사꾸쇼 기판 홀더, 도금 장치, 기판 홀더의 제조 방법 및 기판을 유지하는 방법
US11769686B2 (en) 2016-09-29 2023-09-26 Intel Corporation Methods and apparatus for electroless plating dispense
TW201836720A (zh) * 2016-12-19 2018-10-16 英商Ｐ２Ｉ有限公司 關於表面改質之改良
JP6727117B2 (ja) * 2016-12-22 2020-07-22 株式会社荏原製作所 基板着脱装置、めっき装置、基板着脱装置の制御装置、基板着脱装置の制御方法をコンピュータに実行させるためのプログラムを格納した記憶媒体
JP6860406B2 (ja) 2017-04-05 2021-04-14 株式会社荏原製作所 半導体製造装置、半導体製造装置の故障予知方法、および半導体製造装置の故障予知プログラム
JP6979900B2 (ja) * 2018-02-13 2021-12-15 株式会社荏原製作所 基板保持部材、基板処理装置、基板処理装置の制御方法、プログラムを格納した記憶媒体
JP6971922B2 (ja) * 2018-06-27 2021-11-24 株式会社荏原製作所 基板ホルダ
JP7100556B2 (ja) * 2018-10-05 2022-07-13 株式会社荏原製作所 基板ホルダに基板を保持させるためおよび／又は基板ホルダによる基板の保持を解除するための装置、および同装置を有するめっき装置
CN109706510B (zh) * 2019-03-12 2020-10-02 苏州台祥机电设备有限公司 一种电镀挂具的自动搬运方法
CN110066981B (zh) * 2019-06-17 2023-11-28 浙江晶驰光电科技有限公司 正装基片定位装置及基片装载方法
PT3758049T (pt) * 2019-06-26 2022-03-21 Atotech Deutschland Gmbh & Co Kg Dispositivo e método para mover um objeto para uma estação de processamento, sistema de transporte e aparelho de processamento
PT3761348T (pt) 2019-07-05 2024-07-02 Atotech Deutschland Gmbh & Co Kg Sistema para transportar um substrato entre estações de processamento de um aparelho de processamento, aparelho de processamento e métodos de manusear um substrato
CN114342569A (zh) 2019-08-19 2022-04-12 德国艾托特克有限两合公司 高密度互连印刷电路板的制造顺序及高密度互连印刷电路板
JP7264780B2 (ja) * 2019-09-10 2023-04-25 株式会社荏原製作所 基板ホルダ及びそれを備えた基板めっき装置、並びに電気接点
CN110408981A (zh) * 2019-09-11 2019-11-05 河南理工大学 一种微导线的电镀连接装置
US11713932B2 (en) 2020-08-18 2023-08-01 Stoneage, Inc. Flexible tube cleaning lance positioner frame apparatus
CN112259493A (zh) * 2020-10-19 2021-01-22 绍兴同芯成集成电路有限公司 一种超薄晶圆电镀、化镀整合工艺
CN112442725B (zh) * 2020-11-27 2024-05-24 京东方科技集团股份有限公司 电化学沉积设备组和电化学沉积方法
EP4295390A1 (en) * 2021-02-22 2023-12-27 Evatec AG Vacuum treatment apparatus and methods for manufacturing vacuum treated substrates
JP7580417B2 (ja) * 2022-01-28 2024-11-11 三菱電機株式会社 電気的特性試験装置

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JP2012107311A (ja) * 2010-10-21 2012-06-07 Ebara Corp めっき装置、めっき処理方法及びめっき装置用基板ホルダの姿勢変換方法

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JP4124327B2 (ja) * 2002-06-21 2008-07-23 株式会社荏原製作所 基板ホルダ及びめっき装置
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TWI580814B (zh) * 2010-10-21 2017-05-01 荏原製作所股份有限公司 基板處理裝置，以及鍍覆裝置及鍍覆方法
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JP2004076072A (ja) * 2002-08-13 2004-03-11 Ebara Corp 基板ホルダ、めっき装置及びめっき方法
JP2012107311A (ja) * 2010-10-21 2012-06-07 Ebara Corp めっき装置、めっき処理方法及びめっき装置用基板ホルダの姿勢変換方法

Also Published As

Publication number Publication date
JP6077886B2 (ja) 2017-02-08
US20170175285A1 (en) 2017-06-22
KR20140109319A (ko) 2014-09-15
US20140245954A1 (en) 2014-09-04
TWI598472B (zh) 2017-09-11
TW201447048A (zh) 2014-12-16
JP2014169475A (ja) 2014-09-18
US9624594B2 (en) 2017-04-18
US10077504B2 (en) 2018-09-18

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St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

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